Abstract: A vaporizer vaporizes a force-fed liquid source material in a depressurized atmosphere to generate a source gas and discharging the source gas together with a carrier gas. The vaporizer includes a liquid reservoir chamber for temporarily storing the force-fed liquid source material; and a vaporization chamber communicating with the liquid reservoir chamber via a valve port. Further, the vaporizer includes a valve body adapted to sit on a valve seat surrounding the valve port of the liquid reservoir chamber; an actuator for driving the valve body; a carrier gas injection hole formed at a side of the valve body facing the valve port; and a discharge port for discharging the source gas from the vaporization chamber. By virtue of a specific arrangement of the carrier gas injection hole, the liquid source material is prevented from remaining unvaporized at a downstream side of the valve port.

Abstract: A method of selectively removing a sacrificial material on a substrate is described. The method comprises forming a sacrificial layer on a substrate. Thereafter, the sacrificial layer is selectively decomposed at a temperature less than the temperature required to thermally decompose the sacrificial layer by selectively exposing the sacrificial layer to UV radiation.

Abstract: A plasma processing device comprising a chamber (1) for accommodating therein a substrate (11), a high-frequency power supply (5) for generating microwave, and an antenna unit (3) for radiating microwave into the chamber (1). Microwave generated in the power supply (5) is sent to the antenna unit (3) via a waveguide (6). A top plate (4) forming part of a partition wall of the chamber (1) is formed at the upper portion of the chamber (1). A specified annular delay pass unit (2) formed of the same material as that of the top plate (4), for delaying the propagation of microwave, is provided on the outer peripheral portion of the top plate (4). Accordingly, the plasma processing device can restrict an abnormal discharge and the production of the foreign matters.

Abstract: A method and system for adjusting and controlling the plasma uniformity in a plasma processing system is described. The plasma processing system includes an electron source electrode to which direct current (DC) power is coupled in order to generate a ballistic electron beam during the etching of the substrate. A ring electrode, provided about a periphery of the substrate and opposite the electron source electrode, is utilized to create a ring hollow cathode plasma to affect changes in the distribution of plasma density.

Abstract: A developing apparatus includes two rotating members respectively having parallel horizontal axes of rotation and disposed longitudinally opposite to each other, a carrying passage forming mechanism extended between the rotating members to form a carrying passage, and capable of moving along an orbital path to carry a wafer supported thereon along the carrying passage, a sending-in transfer unit disposed at the upstream end of the carrying passage, a sending-out transfer unit disposed at the downstream end of the carrying passage, a developer pouring nozzle for pouring a developer onto the wafer, a cleaning nozzle for pouring a cleaning liquid onto the wafer, and a gas nozzle for blowing a gas against the wafer. The developer pouring nozzle, the cleaning nozzle and the gas nozzle are arranged in that order in a direction in which the wafer is carried along the carrying passage.

Abstract: A process gas line (255) for carrying WF6 gas for nucleation, a process gas line (259) for carrying WF6 gas for film deposition after nucleation are joined at a single joint (280) to a carrier gas line (256). A gas line (270) is connected to the joint (280) to carry a mixed gas of the carrier gas and WF6 gas to a processing chamber defined by a processing vessel. Sections of the carrier gas line (256) and the gas line (270) extending on the opposite sides of the joint (280) extend along a straight line, and the process gas lines (255, 259) are perpendicular to the gas line (270).

Abstract: There is provided a terminal apparatus capable of, when the volume of packets received by the terminal apparatus is abnormally increased, disconnecting the terminal apparatus from a network and continuously performing a process other than a process regarding received packets by the steps of detecting the number of packets received from the network in a predetermined time, logically disconnecting the terminal apparatus from the network when the number of packets exceeds a predetermined value, and reconnecting the terminal apparatus to the network after a predetermined time has elapsed.

Abstract: A plasma processor electrode includes a support member disposed to face to an electrode that holds a substrate to be treated, an electrode plate fixed to the support member and equipped with gas injection holes and a screw hole open and facing to the support member to supply a processing gas through the gas discharge hole into a processing space formed between the electrode plate and the electrode to generate a plasma in the processing space, and a fastening unit that clamps the electrode plate on the support member by fastening the electrode plate to the support member with a screw driven into the screw hole from the support member.

Abstract: The present invention relates to control of copper contamination to semiconductor substrates upon operation of a heat treatment apparatus which is a semiconductor manufacturing apparatus and which is constructed with quartz products having been contaminated with copper when machined. The quartz product is placed in a heating atmosphere on the stage where it is not still used for a heat treatment for semiconductor substrates. Baking gases including a hydrogen chloride gas and a gas for enhancing activity of the hydrogen chloride gas, for example, an oxygen gas, are then supplied to the quartz product. Consequently, the copper concentration in the region from the surface to the 30 ?m depth of the quartz product can be controlled below 20 ppb, preferably below 3 ppb. The baking process may be carried out before or after assembling the quartz product into the heat treatment apparatus.

Abstract: A structure formed on a semiconductor wafer is examined by obtaining a first diffraction signal measured using a metrology device. A second diffraction signal is generated using a machine learning system, where the machine learning system receives as an input one or more parameters that characterize a profile of the structure to generate the second diffraction signal. The first and second diffraction signals are compared. When the first and second diffraction signals match within a matching criterion, a feature of the structure is determined based on the one or more parameters or the profile used by the machine learning system to generate the second diffraction signal.

Abstract: A method of forming a refractory metal film doped with III or V group elements. The first process gas is supplied from a first gas source through a first gas introducing member to and through a gas supply mechanism toward a substrate within a processing vessel. The second process gas is supplied from a second gas source through a second gas introducing member to and through the gas supply mechanism toward the substrate within the processing vessel. The processing vessel is purged by evacuating the processing vessel by an evacuating mechanism, while supplying the inert gas from a third source through a third gas introducing member to and through the gas supply mechanism into the processing vessel.

Abstract: A method for integrating selective Ru metal deposition into manufacturing of semiconductor devices to improve electromigration and stress migration in bulk Cu. The method includes selectively depositing a Ru metal film on a metallization layer or on bulk Cu using a process gas containing Ru3(CO)12 precursor vapor and a CO gas in a thermal chemical vapor deposition process. A semiconductor device containing one or more selectively deposited Ru metal films is described.

Abstract: A method of forming a tantalum containing multi-layer film. In one embodiment, the method includes disposing a substrate in a process chamber, heating the substrate, exposing the substrate to a tantalum containing precursor to adsorb at least a portion of the tantalum containing precursor on a surface of the substrate, purging the process chamber with a purge gas, and exposing the substrate to a process space comprising helium and hydrogen ionized at a first radio frequency power to form a first tantalum containing layer on the surface. The method further includes exposing the substrate to the tantalum containing precursor to adsorb at least a portion of the precursor on the first tantalum containing layer, purging the process chamber with the purge gas, and exposing the substrate to the process space at a second radio frequency power to form a second tantalum containing layer, where the second radio frequency power is different from the first radio frequency power.

Abstract: A method and system for patterning a substrate using a dual tone development process is described. The method comprises use of plural photo-acid generators with or without a flood exposure of the substrate to improve process latitude for the dual tone development process.

Abstract: An apparatus and method for manufacturing photoelectric conversion elements, and a photoelectric conversion element, the apparatus and method being capable of highly efficiently forming a film at a high speed with microwave plasma, preventing oxygen from mixing, and reducing the number of defects. The invention provides a photoelectric conversion element manufacturing apparatus 100 that forms a semiconductor stack film on a substrate by using microwave plasma CVD.

Abstract: According to the present invention, plasma oxidation processing and plasma nitridation processing are applied at the same time to the surface of a semiconductor substrate by plasma using a microwave. After forming an insulating film by the plasma oxynitridation processing as described above, the plasma nitridation processing is further applied to the insulating film as necessary. Thereby, it is possible to form the insulating film with an excellent electrical characteristic.

Abstract: A lot processing start determining method includes: storing, in a memory, processing conditions of each lot in a first substrate vessel and a maximum usable number of dummy substrates in a second substrate vessel; counting the used number the dummy substrates in the second substrate vessel; and calculating the number of dummy substrates required to process all substrates of a next lot in the first substrate vessel based on the processing conditions of each lot which are stored in the memory, adding the calculated number of the dummy substrates of the next lot to the counted used number of the dummy substrates, and determining whether the added value exceeds the maximum usable number of the dummy substrates stored in the memory. The method further includes prohibiting start of processing the next lot when the added value is determined to exceed the maximum usable number of the dummy substrate.

Abstract: A disclosed vacuum processing apparatus comprises a preliminary vacuum chamber whose inner pressure is switchable between a normal pressure and a reduced pressure, wherein a substrate is transferred to or from the preliminary vacuum chamber; plural vacuum processing chambers, wherein corresponding processes are carried out with respect to the substrate; a vacuum transfer chamber to which the preliminary vacuum chamber and the plural vacuum processing chambers are connected, the vacuum transfer chamber including a substrate transfer mechanism that transfers the substrate between the preliminary vacuum chamber and the plural vacuum processing chambers, and a concave portion formed in a bottom portion or a ceiling portion of the vacuum transfer chamber; an auxiliary module, wherein a predetermined process is carried out with respect to the substrate transfer mechanism; and an elevation mechanism that moves the auxiliary module between a first position where the auxiliary module is accommodated in the concave por

Abstract: A probe of the present invention includes a beam portion cantilevered by a holding portion, and a contact extending perpendicularly to and downward from a free end of the beam portion. An inner cut portion is formed on a fixed end side of the beam portion in a side portion of the contact, and an outer cut portion is formed on a free end side of the beam portion in a side portion of the contact, so that the outer cut portion and the inner cut portion are formed to bend the contact when the contact contacts an electrode of an object to be inspected at a predetermined contact pressure. According to the present invention, in inspection of electrical characteristics of the object to be inspected, suitable contact between the probe and the object to be inspected may be maintained and the durability of the probe may be improved.

Abstract: The present invention is a film deposition apparatus configured to deposit a film on a substrate that has been loaded into a vacuum container via a transfer opening and placed on a table in the vacuum container, by supplying a process gas to the substrate from a process-gas supply part opposed to the table under a vacuum atmosphere, while heating a table surface of the table, the film deposition apparatus comprising: an elevating mechanism configured to vertically move the table between a process position at which the substrate is subjected to a film deposition process, and a transfer position at which the substrate is transferred to and from an external transfer mechanism that has entered from the transfer opening; a surrounding part configured to surround the table with a gap therebetween, when the table is located at the process position, so that the surrounding part and the table divide an inside of the vacuum container into an upper space, which is located above the table, and a lower space, which is loc