Abstract: A substrate treatment apparatus which uniformly forms a fine resist pattern with a desired dimension within a plane of a substrate is disclosed. In a solvent vapor supply unit, a solvent vapor discharge nozzle is provided which can discharge a solvent vapor for swelling a resist pattern while moving above the front surface of a wafer. The wafer for which developing treatment has been finished and on which a resist pattern has been formed is carried into the solvent vapor supply unit, and the solvent vapor discharge nozzle is moved above the front surface of the wafer, so that the solvent vapor discharge nozzle supplies the solvent vapor onto the front surface of the wafer. This uniformly supplies a predetermined amount of solvent vapor to the resist pattern on the front surface of the wafer. As a result, the solvent vapor causes the resist pattern to evenly swell by a predetermined dimension, so that a resist pattern with a desired dimension is finally uniformly formed within the plane of the wafer.

Abstract: An object of the present invention is to simplify manufacturing process of an n channel MIS transistor and a p channel MIS transistor with gate electrodes formed of a metal material. For its achievement, gate electrodes of each of the n channel MIS transistor and the p channel MIS transistor are simultaneously formed by patterning ruthenium film deposited on a gate insulator. Next, by introducing oxygen into each of the gate electrodes, the gate electrodes are transformed into those having high work function. Thereafter, by selectively reducing the gate electrode of the n channel MIS transistor, it is transformed into a gate electrode having low work function.

Abstract: A water removal apparatus removes water contained in a coolant circulating between a target object and a cooling system through a circulation line. The water removal apparatus includes a bypass line through which a part of the coolant separated from the circulation line flows; a heat exchanger, provided in the bypass line, for heating the coolant flowing along the bypass line by using a waste heat of the cooling system; and a water adsorption material, provided at a downstream side of the heat exchanger, for adsorbing the water contained in the coolant. Further, an inspection apparatus, for performing an inspection for a semiconductor wafer mounted on the target object while controlling a temperature of the semiconductor wafer on the target object, includes the water removal apparatus.

Abstract: A substrate transfer system to reduce total processing time by transferring a substrate at a first delivery stage to a process block where processing can be carried out earliest. The substrate processing apparatus includes a first transfer device delivering a wafer with respect to a substrate carrier, and a second transfer device delivering a wafer between a plurality of process blocks and the first transfer device via a first delivery stage, to transfer the wafer with respect to the process blocks. The process block where there is no wafer or where processing of the last wafer within the relevant process block will be completed earliest is determined based on processing information of the wafers from the process blocks, and the wafer of the first delivery stage is transferred by the second transfer device to the relevant process block. This ensures smooth transfer of the wafer to the process block.

Abstract: A resist coating method supplies a resist solution to substantially the center of a target substrate to be processed while rotating the target substrate at a first rotational speed, then decelerates the rotation of the substrate to a second rotational speed lower than the first rotational speed, or until rotational halt, makes the deceleration smaller in the deceleration step as the rotational speed becomes closer to the second rotational speed or the rotational halt, and accelerates the rotation of the substrate to a third rotational speed higher than the second rotational speed to spin off a residue of the resist solution.

Abstract: In a microwave plasma processing apparatus, a metal made lattice-like shower plate 111 is provided between a dielectric material shower plate 103, and a plasma excitation gas mainly an inert gas and a process gas are discharged form different locations. High energy ions can be incident on a surface of the substrate 114 by grounding the lattice-like shower plate. The thickness of each of the dielectric material separation wall 102 and the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antenna 110 and the dielectric material separation wall 102 and a thickness of the dielectric material shower plate 103 are optimized so as to be capable of supplying a microwave having a large power.

Abstract: A resist film processing unit is disclosed that can improve an etching resistance of a resist film formed on a substrate. The resist film processing unit includes a light source to irradiate an ultraviolet light on a resist film patterned by a development process, a heating part configured to heat the resist film irradiated with the ultraviolet light by the light source, and a solvent processing unit configured to expose the resist film to a solvent gas including a solvent that contains a benzene ring, during or after heating of the resist film by the heating part.

Abstract: A substrate receiving method in a substrate processing system includes: a processing process of transferring a plurality of unprocessed substrates accommodated in a first substrate storage container to a substrate processing chamber in sequence and performing a plasma process on the unprocessed substrates in the substrate processing chamber; a retreating process of retreating the plasma-processed substrates temporarily to a second substrate storage container by transferring the plasma-processed substrates to the second substrate storage container in sequence; a determining process of determining whether or not the last unprocessed substrate is unloaded from the first substrate storage container; and a re-accommodating process of transferring and re-accommodating the plurality of the processed substrates accommodated in the second substrate storage container into the first substrate storage container in sequence when a substrate decided as the last unprocessed substrate is unloaded in the determining process.

Abstract: There is provided a database storing reference data including a plurality of reference image data, which are obtained by imaging reference substrates, respectively, wherein each of the reference substrates lacks only one of the films of different kinds but includes remainder of the films of different kinds, and wherein in the reference substrates the lacking films are different from each other, and wherein the plurality of reference image data is classified into categories according to the kinds of the films. Difference degrees between color information of a defect area extracted from an image data of an inspection target substrate and color information of corresponding areas of the reference substrates are calculated. Based on the difference degree, the defective film is identified.

Abstract: In the plasma processing by an electrically negative gas, the in-plane uniformity of plasma processing is enhanced compared to the conventional case by controlling the ion density in the plasma. Not only is a processing gas being an electrically negative gas introduced from a processing gas source 170 into a processing chamber 102 but also an electrically negative gas having electron attachment coefficient greater than that of the processing gas is introduced as an additional gas from an additional gas source 180 to thereby form a plasma. In the plasma formation, the ion density in the plasma is controlled by regulating the flow rate of the additional gas relative to that of the processing gas.

Abstract: A substrate processing apparatus that enables a plurality of substrates to be subjected to stable plasma processing. A chamber 11 houses a wafer W. The wafer W is subjected to reactive ion etching in the chamber 11. A focus ring 25 has p-type silicon as a parent material thereof. At least part of the focus ring 25 is exposed to an interior of the chamber 11. The focus ring 25 has been subjected to heat treatment at least once.

Abstract: A plasma processing system includes a plasma processing device for forming or etching the plurality of films and a gas source for supplying all gases required for forming or etching the plurality of films. Furthermore, gases required for forming or etching each of the plurality of films are selectively supplied from the gas source to the plasma processing device via gas pipes by a control device. Therefore, a plurality of films of different compositions may be formed or etched within a single plasma processing device.

Abstract: Provided is a holding stage structure which holds a substrate and disposed in a process chamber that is vacuum-evacuatable and allows a predetermined process to be performed on the substrate therein. The holding stage structure includes: a holding stage body on which the substrate is placed; an elevation pin mechanism lowering the substrate on the holding stage body or raising the substrate from the holding stage body; and a stepped portion formed on the holding stage body so that a peripheral portion of a rear surface of the substrate placed on the holding stage body is exposed to a processing gas supplied into the process chamber.

Abstract: A method is used for forming an SrTiO3 film on a substrate placed and heated inside a process chamber while supplying a gaseous Ti source material, a gaseous Sr source material, and a gaseous oxidizing agent into the process chamber. Sr(C5(CH3)5)2 is used as the Sr source material. The method performs a plurality of cycles to form the SrTiO3 film. Each cycle sequentially includes supplying the gaseous Ti source material into the process chamber and thereby adsorbing it onto the substrate; supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Ti source material thus adsorbed and forming a Ti-containing oxide film; supplying the gaseous Sr source material into the process chamber and thereby adsorbing it onto the Ti-containing oxide film; and supplying the gaseous oxidizing agent into the process chamber and thereby decomposing the Sr source material thus adsorbed and forming an Sr-containing oxide film.

Abstract: A substrate mounting table includes a plurality of passageways independently provided therein, a temperature control medium flowing through the passageways, and a gap formed between at least two of the passageways. In a substrate processing method for processing a substrate mounted on the substrate mounting table in a substrate processing apparatus while controlling a temperature thereof, a process is performed on the substrate while controlling the temperature of the substrate by flowing the temperature control medium through each of the passageways. The passageways are respectively provided in a central area of the substrate mounting table and a peripheral area located outside the central area, and the central area and the peripheral area are thermally isolated from each other by evacuating the gap so as to set the gap to a vacuum state.

Abstract: A semiconductor processing system includes a casing forming a handling area. The handling area includes a main-process area and a pre-process area divided from each other and connected through an openable port. The main-process area and the pre-process area are connected to their own lines for vacuum-exhausting gas therefrom and their own lines for supplying an inactive gas thereinto and adjust pressure independently. A transfer port unit is disposed on the casing to place a transfer container that stores target objects. The transfer port unit allows the transfer container to open to the main-process area while maintaining an airtightness of the main-process area. The system includes a vertical batch main-processing apparatus. The system also includes a vertical batch pre-processing apparatus connected to the pre-process area and that performs a pre-process on the target objects and transforms a semiconductor oxide film on the target objects into an intermediate film.

Abstract: In the present invention, a heating plate is divided into a plurality of regions. Integrated values of temperature fluctuations in each of the regions when a substrate is mounted on the heating plate in a normal state without extraneous matter are collected. A Mahalanobis reference space in the discriminant analysis method is formed based on the integrated values at normal time. During actual heat processing, an integrated value of temperature fluctuation of each of the regions when the substrate is mounted on the heating plate is then detected, so that a Mahalanobis distance about the integrated value during the processing is calculated based on the integrated value during the processing and the Mahalanobis reference space obtained in advance. Whether or not there is extraneous matter on the heating plate is determined by comparing the calculated Mahalanobis distance to a predetermined threshold value.

Abstract: Disclosed is a method for replacing a process instrument in a processing apparatus, in which a target object is loaded by a transfer mechanism into a processing unit and is subjected to a process by use of the process instrument. The method includes confirming that a process on the target object is finished in a processing unit designated as a process instrument replacement target, and providing information that a process instrument replacing operation is permitted to start. The method further includes, when a shutter of the processing unit designated as the process instrument replacement target is closed to perform a process instrument replacing operation and an operation prohibition state is thereby applied to the transfer mechanism, canceling the operation prohibition state to allow the transfer mechanism to perform a load/unload operation relative to a processing unit not designated as a process instrument replacement target.

Abstract: A semiconductor device, such as a transistor or capacitor, is provided. The device includes a substrate, a gate dielectric over the substrate, and a conductive gate electrode film over the gate dielectric. The gate dielectric includes a mixed rare earth oxide, nitride or oxynitride film containing at least two different rare earth metal elements.

Abstract: An in-situ hybrid film deposition method for forming a high-k dielectric film on a plurality of substrates in a batch processing system. The method includes loading the plurality of substrates into a process chamber of the batch processing system, depositing by atomic layer deposition (ALD) a first portion of a high-k dielectric film on the plurality of substrates, after depositing the first portion, and without removing the plurality of substrates from the process chamber, depositing by chemical vapor deposition (CVD) a second portion of the high-k dielectric film on the first portion, and removing the plurality of substrates from the process chamber. The method can further include alternatingly repeating the deposition of the first and second portions until the high-k dielectric film has a desired thickness. The method can still further include pre-treating the substrates and post-treating the high-k dielectric film in-situ prior to the removing.