Abstract: A pressure sensor, a pressure control apparatus, and a flow rate control apparatus are provided to automatically correct temperature drift of the pressure sensor and accurately detect pressure despite changes in temperature. An embodiment includes an upstream side pressure sensor between an orifice and a control valve, to control flow rate through the orifice by a regulating control valve, while calculating the flow from the upstream side pressure. With a temperature sensor, a memory means, and a temperature drift correcting means which calculates drift of the upstream side pressure sensor from data in the memory means when the temperature of the fluid changes and offsets the output drift of the upstream side pressure sensor with the calculated amount of the output drift, temperature drift of the pressure sensor is automatically corrected, enabling accurate control of flow rate.

Abstract: A method for supplying a specified quantity Q of processing gas while dividing at a desired flow rate ratio Q1/Q2 accurately and quickly from a gas supply facility equipped with a flow controller into a chamber. When a specified quantity Q of gas is supplied while being divided at a desired flow rate ratio Q1/Q2 from a gas supply facility equipped with a flow controller into a reduced pressure chamber C through a plurality of branch supply lines and shower plates fixed to the ends thereof, pressure type division quantity controllers FV1 and FV2 are provided in the plurality of branch supply lines GL1 and GL2.

Abstract: Disclosed is a method of controlling the flow rate of clustering fluid using a pressure type flow rate control device in which the flow rate Q of gas passing through an orifice is computed as K=KP1 (where K is a constant) with the gas being in a state where the ratio P2/P1 between the gas pressure P1 on the upstream side of the orifice and the gas pressure P2 on the downstream side of the orifice is held at a value not higher than the critical pressure ratio of the gas wherein the association of molecules is dissociated either by heating the pressure type flow rate control device to the temperature higher than 40° C., or by applying the diluting gas to the clustering fluid to make it lower than a partial pressure so the clustering fluid is permitted to pass through the orifice in a monomolecular state.

Abstract: A pressure-type flow rate control apparatus controls the flow rate of fluid passing through an orifice to a target flow rate. The flow rate of a compressible fluid under non-critical conditions (sub-sonic) passing through the orifice is calculated by: Qc=KP2m(P1?P2)n so that the flow rate can be controlled to the target flow rate with high precision and speed. Also provided is an improved pressure-type flow rate control apparatus in which a pressure ratio P2/P1=r, obtained from an upstream pressure P1 and a downstream pressure P2 is constantly compared with a critical value r, and under critical conditions (r?rc), the flow rate is calculated by: Qc=KP1. Under non-critical conditions (r>rc), the flow rate is calculated by Qc=KP2m(P1?P2)n.

Abstract: A plasma processing apparatus that generates a uniform plasma, thus allowing uniform processing of large-diameter wafers. The cylindrical apparatus includes a wafer mounting table, a silica plate providing an airtight seal, a microwave supplier for propagating a microwave in TE11-mode, and a cylindrical waveguide connected at one end to the microwave supplier. A radial waveguide box is connected between the other end of the cylindrical waveguide and the silica plate. The radial waveguide box extends radially outward from the cylindrical waveguide, forming a flange and defining an interior waveguide space. A disc-shaped slot antenna is located at the lower end of the radial waveguide box, above the silica plate. A circularly-polarized wave converter disposed in the cylindrical waveguide rotates the TE11-mode microwave about the axis of the cylindrical waveguide, and sends the rotating microwave to the radial waveguide box.

Abstract: A plasma processing apparatus that generates a uniform plasma, thus allowing uniform processing of large-diameter wafers. The cylindrical apparatus includes a wafer mounting table, a silica plate providing an airtight seal, a microwave supplier for propagating a microwave in TE11 mode, and a cylindrical waveguide connected at one end to the microwave supplier. A radial waveguide box is connected between the other end of the cylindrical waveguide and the silica plate. The radial waveguide box extends radially outward from the cylindrical waveguide, forming a flange and defining an interior waveguide space. A disc-shaped slot antenna is located at the lower end of the radial waveguide box, above the silica plate. A circularly-polarized wave converter disposed in the cylindrical waveguide rotates the TE11-mode microwave about the axis of the cylindrical waveguide, and sends the rotating microwave to the radial waveguide box.

Abstract: A fluid supply apparatus with a plurality of flow lines branching out from one pressure regulator with the flow lines arranged in parallel and constructed so that opening or closing one flow passage will have no transient effect on the steady flow of the other flow passages. Each flow passage is provided with a time delay-type mass flow controller MFC so that when one closed fluid passage is opened, the mass flow controller on that flow passage reaches a set flow rate Qs in a specific delay time ?t from the starting point. The invention includes a method and an apparatus in which a plurality of gas types can be controlled in flow rate with high precision by one pressure-type flow control system.

Abstract: A fluid supply apparatus with a plurality of flow lines branching out from one pressure regulator with the flow lines arranged in parallel and constructed so that opening or closing one flow passage will have no transient effect on the steady flow of the other flow passages. Each flow passage is provided with a time delay-type mass flow controller MFC so that when one closed fluid passage is opened, the mass flow controller on that flow passage reaches a set flow rate Qs in a specific delay time At from the starting point. The invention includes a method and an apparatus in which a plurality of gas types can be controlled in flow rate with high precision by one pressure-type flow control system.

Abstract: A semiconductor water is contained in a reaction tube, and the reaction tube is exhausted through an exhaust pipe while supplying ammonia and dichlorosilane into the reaction tube. A silicon nitride film is deposited on an object to be heat-treated by a reaction of ammonia and dichlorosilane. Subsequently, TEOS is supplied into the reaction tube, while the reaction tube is exhausted through the exhaust pipe. A silicon oxide film is deposited on the object by resolving the TEOS. A semiconductor wafer an which a laminated layer of the silicon nitride film and the silicon oxide film is formed is unloaded from the reaction tube. Then, reactive products attached into the exhaust pipe and the reaction tube are removed, by conducting fluoride hydrogen thereinto, thereby cleaning the pipers The top end of the exhaust pipe is split into two vents, either one of which is used for discharging exhaust gas for forming films and the other one of which is used for discharging HF gas for cleaning the pipes.

Abstract: A fluid supply apparatus with a plurality of flow lines branching out from one regulator for adjustment of pressure, the flow lines being arranged in parallel, wherein a measure is taken that the operation, that is, opening or closing of one flow passage will have no transient effect on the steady flow of the other flow passages. For this purpose, each flow passage is provided with a time delay-type mass flow controller MFC so that when one closed fluid passage is opened, the mass flow controller on that flow passage reaches a set flow rate Qs in a specific delay time &Dgr;t from the starting point.

Abstract: In a system and method for scheduling the movement of wafers in a wafer-processing tool, the wafer-processing tool can include a load module, a wafer-transfer unit, a process module, and a scheduler. The scheduler can be configured to generate a schedule for the movement of wafers in the wafer-processing tool based on the duration of the operations to be performed by the wafer-transfer unit and the process module in processing the wafers.

Abstract: A wafer having a polished surface of copper is caused to contact a pad serving as an abrasive member, and the copper is polished while supplying a slurry containing mechanical and chemical polishing particles. Thereafter, when a finishing member of diamond having a large number of fine protrusions is scanned while the finishing member contacts the surface of the pad, a chelating agent, such as oxtail acid, is supplied to the surface of the pad as a dressing solution. Thus, reaction products, which have been produced by the reactions of copper with the slurry and which have adhered to the surface of the pad to be difficult to be dissolved in water, are dissolved, so that the reaction products can be removed in a short time. Thus, the reaction products having adhered to the abrasive member after polishing the wafer can be remove in a short time, so that the time required to carry out the CMP process can be shortened.

Abstract: The object of the present invention is to provide a plating method capable of planarization process of high quality in comparison with the conventional plating method and also provide a plating device and a plating system adopting the plating method of the invention. In the plating method and device, an object 10 to be processed and an electrode plate 20 are dipped in a solution including objective metal ions and a forward current is supplied between the object and the electrode plate to educe a metal on the surface of the object. After forming a plating film on the object excessively, a backward current is supplied between the object 10 and the electrode 20 to uniformly remove at least part of superfluous plating film.

Abstract: A construction for mounting a pressure detector prevents the detector diaphragm from being strained by stress applied to the pressure detector as the detector is mounted in a fixture main body provided in a pipe line or the like, thereby keeping the output characteristics and temperature characteristics of the detector from greatly differing before and after the mounting. The pressure detector is constructed by combining and fastening together a diaphragm base having a diaphragm and a sensor base having a sensor element therein that is activated by displacement of the diaphragm base. The pressure detector, with a gasket placed thereunder, is disposed in a mounting hole of a fixture main body that is mounted in a pipe line. The pressure detector is air-tightly pressed and fastened by a presser member inserted from above in the mounting hole.

Abstract: A plasma-assisted processing system has a lifting mechanism capable of vertically moving a microwave power unit and a waveguide to adjust the level of a planar slot antenna disposed on an expanded lower end part of the waveguide. A space extending under the antenna is surrounded by a shielding member. An optical sensor having an array of photosensors is disposed on the outer side of a window formed in the side wall of a vacuum vessel to monitor the lower limit level of a cease region for a plasma (cease level). An ideal distance between the cease level and the antenna is determined beforehand and the level of the antenna is adjusted on the basis of a measured cease level so that the antenna is spaced the ideal distance apart from the cease level. Since the difference between the cease level and a level X0 for the cutoff density of an X-wave is fixed, the level X0 may be monitored instead of the cease level.

Abstract: A chemical filter unit 10 is made of a chemical filter 12 and a filter life detection sensor 1. The filter life detection sensor 1 is provided with an adsorption state detection sensor 3 and a reference sensor 4 to which a flow of air is blocked. The sensors 3 and 4 are made of the same filter material as the chemical filter 12 with a pair of electrodes sandwiching the filter material. An oscillation circuit, in which the sensors 3 and 4 constitute a part of the oscillating conditions, detects changes in impedance of the sensors 3 and 4 based on the changes in oscillation frequencies. A measurement of the adsorption state detection sensor 3 is corrected with a measurement of the reference sensor 4 in order to remove effects of temperature and humidity, obtain a measurement corresponding to the amount of adsorption of chemical substances, and decide on the timing of replacing the chemical filter based on the corrected measurement.

Abstract: In a system and method for scheduling the movement of wafers in a wafer-processing tool, the wafer-processing tool can include a load module, a wafer-transfer unit, a process module, and a scheduler. The scheduler can be configured to generate a schedule for the movement of wafers in the wafer-processing tool based on the duration of the operations to be performed by the wafer-transfer unit and the process module in processing the wafers.

Abstract: A prober of this invention includes a probe card, a main chuck, a shaft member fixed on and extending downwardly from the main chuck, an X table and Y table for retaining the shaft member by use of a guide to be freely movable in a vertical direction, and a contact body fixed on the shaft member. The undersurface of the contact body is made parallel to the mounting surface of the main chuck. The prober further includes an elevation body whose center coincides with an extension line downwardly extending from the test center of the probe card, and an elevation body elevating mechanism for vertically moving the elevation body and a ball provided on the upper portion of the elevation body is slidably set in contact with the undersurface of the contact body.

Abstract: A method and system for processing a substrate in the presence of high purity C5F8. When processing oxides and dielectrics in a gas plasma processing system, C5F8 is used in combination with a carrier gas (e.g., Ar) and one or more of CO and O2. When using a silicon nitride (SixNy) layer as an etch stop, effective etching is performed due to the selectivity of oxides versus silicon nitride. The method is used when etching down to self-aligning contacts and other layers. The method may be practiced with or without using an anti-reflective coating underneath the photoresist layer.

Abstract: A plasma CVD apparatus for forming a silicon film on an LCD substrate includes a container which is divided into process and upper chambers by a quartz partition plate. A work table on which the substrate is mounted is arranged in the process chamber and a lower electrode to which a high frequency potential is applied is arranged in the work table. First lower and second upper supply heads are arranged between the partition plate and the work table in the process chamber. SiH4 and H2 gas and He gases are supplied through the first and second supply heads. He gas is transformed into plasma while SiH4 and H2 gas is excited and decomposed by the plasma thus formed. Two coils are arranged in the upper chamber and high frequency voltages are applied to the coils to generate electromagnetic field to induce the transforming of He gas into plasma. High frequency voltages applied to the coils are the same in phase and directions of current flowing through adjacent portions of the coils are the same.