Abstract: A method of producing a DNA array for analyzing a DNA modification (for example, methylation), comprising (1) preparing a mixture of DNA fragments in which a modified base (for example, methylated cytosine) or a base (for example, cytosine) is exposed, (2) bringing the mixture of DNA fragments into contact with an antibody specific to the modified base (for example, methylated cytosine) or the base (for example, cytosine), and separating the mixture into a group consisting of DNA fragments which form an immunocomplex and another group consisting of DNA fragments which do not react with the antibody, or a group consisting of DNA fragments showing a high affinity for the antibody and another group consisting of DNA fragments showing a low affinity for the antibody, (3) identifying all or part of DNA fragments contained in each of the DNA fragment groups, and (4) arranging one or more nucleic acids capable of hybridizing with any one of the identified DNA fragments on a substrate, is disclosed.

Abstract: A heating apparatus for heating a target object W is provided with a plurality of heating light sources, including LED elements for applying heating light having a wavelength within a range from 360 to 520 nm to the object. Thus, a temperature of only the shallow surface of the object, such as a semiconductor wafer, is increased/reduced at a high speed in uniform temperature distribution, irrespective of the film type.

Abstract: Embodiments of an apparatus and methods for providing critical dimensions of a pattern. Pattern parameters and process history from a first substrate are used to create a thermal modes. The thermal mode is employed to established intelligent set points for zones of a substrate heater. A second substrate is position proximate the heater. The actual temperature of each zone is controlled using the corresponding intelligent setpoint.

Abstract: A substrate processing apparatus, according to which inspection of various devices in the substrate processing apparatus can be carried out with improved reliability, while reducing the burden on a user. A processing chamber processes semiconductor wafers therein. A transfer chamber transfers the semiconductor wafers. A FOUP (front opening unified pod) houses a plurality of dummy wafers for inspection of the processing chamber or the transfer chamber. A CPU causes an HDD (hard disk drive) to store a housing state relating to the arrangement of the dummy wafers in the FOUP before replacement of dummy wafers in the FOUP and that after the replacement as dummy wafer setup information.

Abstract: An atomic layer deposition (ALD) module is provided with a rotatable carrier plate that holds a plurality of wafer holders at equally spaced angular positions. The plate is rotated to carry the wafers through a plurality of processing stations arranged at similarly equally spaced angular intervals around the axis of rotation of the rotatable plate. Rotation of the carrier plate carries a plurality of substrates successively through a plurality of pairs of stations, each pair including a precursor deposition station and a light activation station. A plurality of rotations may be used to apply a complete ALD film on the substrates. Wafers in different holders on the carrier are simultaneously processed in different stations, with some having precursor deposited thereon and others having the precursor thereon activated by light. One or more transfer stations can be included for loading or unloading wafers to and from the carrier. The number of holders on the carrier equals the number of stations in the module.

Abstract: A substrate processing apparatus includes: a processing chamber for accommodating and processing a target substrate therein; a supporting member for supporting the target substrate in the processing chamber; a processing gas supply mechanism for supplying, into the processing chamber, a processing gas which generates radicals for processing the target substrate; a catalytic heating element disposed to face the target substrate, the element radiating heat when an electric power is applied thereto and generating the radicals by a catalytic action as the processing gas contacts the catalytic heating element; and a power supply mechanism for supplying the power to the catalytic heating element to allow the catalytic heating element to radiate the heat. The apparatus further includes a driving mechanism for moving the target substrate close to or apart from the catalytic heating element by means of moving the supporting member, to thereby control a temperature of the target substrate.

Abstract: A method and apparatus are provided to control the radial or non-radial temperature distribution across a substrate during processing to compensate for non-uniform effects, including radial and angular non-uniformities arising from system variations, or process variations, or both. The temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck to vary heat conduction across the wafer. Backside gas flow, of helium, for example, is dynamically varied across the chuck to control the uniformity of processing of the wafer. Ports in the support are grouped, and gas to or from the groups is separately controlled by different valves responsive to a controller that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities.

Abstract: A substrate processing apparatus includes: a gas supply mechanism supplying gas containing a halogen element and basic gas into a process chamber; and a first temperature adjusting member and a second temperature adjusting member adjusting a temperature of the substrate in the process chamber, wherein the second temperature adjusting member adjusts the temperature of the substrate to a higher temperature than the first temperature adjusting member.

Abstract: The post exposure bake cycle in a chemically amplified resist process is more precisely controlled by measuring the distance from multiple locations on the bottom of each processed wafer to a reference plane surface while the wafer is supported on a cool plate. Subsequent to measuring the distance, the wafers are transferred to the hot plate that has a series of controllable heating elements. The set temperature for the heating elements is established in response to the distances measured while the wafer is on the cooling plate. The measurements are taken by utilizing proximity sensors located within the cooling plate.

Abstract: p53-dependent Damage-Inducible Nuclear Protein 1 (p53DINP1 protein) is a p53-induced nuclear protein that induces p53-dependent apoptosis by regulating p53 function through Ser 46 phosphorylation. A DNA encoding p53DINP1 can be applied as anticancer agents for destroying neoplasms such as tumors, and as therapeutic or preventive agents for diseases associated with p53-mediated apoptosis abnormalities. It is also possible to apply the above protein and DNA in methods of screening for candidate compounds for regulating p53-mediated apoptosis.

Abstract: Embodiments of an apparatus and methods for heating a substrate and a sacrificial layer are generally described herein. Other embodiments may be described and claimed.

Abstract: A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes a controller that stores, as initial peak position data, positions of interference peaks respectively measured in advance by irradiating the first to the nth measuring beam onto the first to the nth measurement point of the temperature measurement object, and compares the initial peak position data to positions of interference peaks respectively measured during a temperature measurement to thereby estimate a temperature at each of the first to the nth measurement point.

Abstract: A method of etching a hafnium containing layer includes disposing a substrate having the hafnium containing layer in a plasma processing system, wherein a mask layer defining a pattern therein overlies the hafnium containing layer. A process gas including a HBr gas is introduced to the plasma processing system, and a plasma is formed from the process gas in the plasma processing system. The hafnium containing layer is exposed to the plasma in order to treat the hafnium containing layer. The hafnium containing layer is then wet etched using a dilute HF wet etch process.

Abstract: There is provided a power-off system including a connector (10) connected at one end thereof to a system power line (A) and at the other end to an electric appliance (10) and which connects or disconnects a power supplied from the system power line (A) to the electric appliance (100), a sensor (11) to detect environmental information, and a signal transmitter (12) to generate a predetermined signal on the basis of the environmental information detected by the sensor (11) and send the generated predetermined signal to the connector (10). For example, the sensor (11) having detected an earthquake will send an quake signal to the signal transmitter (12), and the latter will open the circuit of the connector (10) to prevent a fire possibly caused by the earthquake.

Abstract: A polymer containing units represented by the defined formula (1); and a process for producing the polymer, which comprises the step of polymerizing a compound represented by the defined formula (3), the units represented by the formula (1) being polymerized units of the compound represented by the formula (3) such as 1,6-heptadiene.

Abstract: A polymer containing units represented by the defined formula (1); and a process for producing the polymer, which comprises the step of polymerizing a compound represented by the defined formula (3), the units represented by the formula (1) being polymerized units of the compound represented by the formula (3) such as 5,5-diallyl-2,2-dimethyl-1,3-dioxane.

Abstract: A method and system for measuring contamination, such as metal contamination, on a substrate. A dry cleaning system is utilized for non-destructive, occasional removal of contamination, such as metal containing contamination, on a substrate, whereby a monitoring system coupled to the exhaust of the dry cleaning system is employed to determine the relative level of contamination on the substrate prior to dry cleaning.

Abstract: A cleaning method for a plasma processing apparatus includes introducing a cleaning gas containing Cl2 and N2 into the processing chamber by the gas supply mechanism; and removing aluminum-based deposits adhered to the inside of the processing chamber by generating a plasma of the cleaning gas by the plasma generating mechanism. The plasma processing apparatus includes a processing chamber for accommodating and processing a target substrate therein; a gas supply mechanism for supplying a gas into the processing chamber; a gas exhaust mechanism for evacuating the processing chamber; and a plasma generating mechanism for generating a plasma of the gas supplied in to the processing chamber.

Abstract: A substrate mounting stage that prevents poor attraction of substrates so as to improve the operating rate of a substrate processing apparatus. The substrate mounting stage is disposed in the substrate processing apparatus and has a substrate mounting surface on which a substrate is mounted. The arithmetic average roughness (Ra) of the substrate mounting surface is not less than a first predetermined value, and the initial wear height (Rpk) of the substrate mounting surface is not more than a second predetermined value.

Abstract: A substrate treatment apparatus that treats a substrate under treatment has an interface section, a substrate loading/unloading section, a reduced pressure atmosphere conveyance chamber, and an exposure treatment chamber. The interface section has a conveyance mechanism that can freely load and unload the substrate under treatment from another device into the apparatus or vice versa. The substrate under treatment can be loaded and unloaded into and from the substrate loading/unloading section in one direction by the conveyance mechanism of the interface section. The reduced pressure atmosphere conveyance chamber is disposed adjacent to and perpendicular to the direction of the substrate loading/unloading section and has a conveyance mechanism that conveys the substrate under treatment under a reduced pressure atmosphere.