Abstract: A calcium phosphate porous sintered body which comprises spherical pores communicating with one another substantially throughout the body with a porosity of 55% or more and 90% or less, and has an average diameter of the inter-pore communicating parts of 50 &mgr;m or more, a pore diameter of 150 &mgr;m or more, and a three-point bending strength of 5 MPa or more, and a method for producing the same.

Abstract: The heater sealed with a carbon wire heating element of the present invention has a carbon wire heating element sealed within a quartz glass member, said carbon wire being prepared by knitting carbon single fibers into a knitted cord or a braid, each wire having a crystal structure with a interlayer spacing d (002) thereof being 0.343 or less and a crystallite size Lc (002) thereof being 4.0 nm or more.

Abstract: A single crystal pulling apparatus comprising, a laser unit 46 emitting a beam with a wavelength of 550 nm or less to form a spot on the surface of said melt, a spot camera 47 capturing the spot to produce electrical image signals corresponding thereto, an image processor 50 processing the electrical image signals to produce image data, and a control unit 49 receiving the image data and calculating a current melt level so that a crucible shaft lift 8 moves a crucible shaft up and down to adjust the melt level in accordance with the predetermined melt level.

Abstract: An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus.

Abstract: The invention presents an immersion nozzle having corrosion resistance to steel of high oxygen content or type of steel treated with calcium, and capable of preventing adheres and deposits of molten steel and oxide inclusions on the nozzle inner wall, in which at least a part of its portion contacting with molten steel is composed of a refractory material containing 50 wt. % or more of a principal component including one or more types of magnesia, alumina, spinel, zirconia, mullite, and silica, and also 0.3 to 15 wt. % of boron nitride, and an organic binder.

Abstract: The present invention provides a wafer heating device which can improve uniformity of a temperature distribution within a surface area of a wafer, with a relatively simple structure. A wafer is supported on a susceptor of annular shape. A first heater of disc shape is disposed below the wafer, and a second heater of annular shape is disposed to surround the first heater. Radiation thermometers are arranged at a ceiling portion of a reaction chamber. The first radiation thermometer measures a temperature of a central area of the wafer, the second radiation thermometer measures a temperature of a peripheral area of the wafer, and the third radiation thermometer measures a temperature of the susceptor. The first heater and the second heater are controlled by independent closed loops. When a wafer is set on the susceptor, a power of the second heater is controlled by using a value measured by the second radiation thermometer as a feedback signal.

Abstract: The object of the present invention is to provide a process for manufacturing a product of glassy carbon, having endurance strength to fatigue at elevated temperature, and to thermal fatigue. After curing the material resin in a mold, the cured resin is baked to obtain a glassy carbon piece. The piece is then machined into a predetermined shape. Subsequently, the surface of the piece resulted after machining, is impregnated with the resin. Further, the resin-impregnated piece is baked so as to transform the impregnated resin into glassy carbon.

Abstract: The aluminum nitride sintered body of the invention has a thermal conductivity equivalent to that of a high purity aluminum nitride sintered body and a volume resistivity of 1014 &OHgr;·cm or less, and is composed of aluminum nitride phase and yttrium aluminum oxide phase formed at grain boundaries of aluminum nitride phase, where the yttrium aluminum oxide phase is 0.5 to 10 wt % in extremes for aluminum nitride phase, and contains at least one kind of lanthanide element 0.1 to 20 atom % in extremes for yttrium element.

Abstract: The gas filter module of the invention has: a housing which has a gas inlet port at one end and a gas outlet port at another end, and which is divided into two portions in a longitudinal direction; a filter body consisting of a porous ceramics member which is loaded into the housing and through which an inflow gas passes; and a ring-like support member consisting of dense ceramics which is fittingly coupled to a step portion formed inside the housing and which is joined to the filter body. The ring-like support member is fixed via two metal O-rings to a fixing gap of the step portion of the housing.

Abstract: A sealing terminal includes internal connection lines which are connected to heating elements and external connection lines via which power is supplied. A quartz glass body includes a plurality of grooves in its outer surface to retain the internal and external connection lines in place. Conductive foils are used to connect the internal and external lines which are housed in a quartz glass tube so that the ends of the lines project out of the respective ends thereof. A plug is disposed in the lower end of the tube to close the same. Spark generation is prevented while a low electrical resistance sealed terminal which is simple in structure and quick and easy to assemble, results.

Abstract: The present invention has been achieved by a material for a sintering appliance which comprises a base material comprising alumina×silica containing from 65 to 95% by weight of Al2O3 having formed on the surface thereof a flame-coated film comprising ZrO2 and CaO as main components, wherein the content of CaO is from 23 to 30% by weight based on the weight of the ZrO2 and CaO, the mineral composition of the main components of the coated film is calcium zirconate. Preferably the difference of thermal expansion between the base material and the flame-coated film is 0.3% or more at 1,200° C.

Abstract: A vapor deposition apparatus for supplying raw-material gas into a reactor to form a thin film on a wafer substrate disposed in the reactor by vapor deposition, including at least a rotator for mounting the wafer substrate thereon, a treatment gas introducing port, a straightening vane having plural holes, and a wafer substrate feed-in/out port, wherein the lowermost portion of the wafer feed-in/out port is located at a predetermined height from the upper surface of the rotator, and the difference in height between the lowermost portion of the wafer feed-in/out port and the upper surface of the rotator is set to be larger than the thickness of a transition layer of the upper portion of the rotator. In a vapor deposition method, a wafer substrate is mounted on the rotator to form a thin film having little defect and uniform film thickness on the wafer substrate by using the vapor deposition apparatus.

Abstract: There is provided a vapor deposition apparatus for forming a thin film which includes plural reaction gas supply ports at the top portion of a hollow reactor, an exhaust port at the bottom of the reactor, a rotational substrate holder provided inside the reactor on which a wafer substrate is mounted. A straightening vane having plural gas holes formed therein is provided on an upper portion of the reactor. The reactor is partitioned into upper and lower portions which have different inside diameters, with the inner diameter of the upper portion being smaller than the inner diameter of lower portion. The lower end of the upper portion and the upper end of the lower portion are linked by a linking portion which has a predetermined shape to make continuous the hollow inside of the reactor. A thin film is formed on the surface of a wafer substrate, which is placed on the rotational substrate holder, by supplying a reaction gas into the reactor.

Abstract: A vertical wafer boat in which a ceramic film is prevented from being peeled off and which has a long useful life is provided. Front and rear sets each consisting of two support rods 4 which are bilaterally symmetrically arranged are respectively disposed in front and rear sides between upper and lower plates 1 and 2. A number of wafer mount groove portions 3 are formed in the support rods. The plates and the support rods are made of a ceramic base material, and the surfaces are covered by a high-purity ceramic film. At least wafer mount groove portions of front right and left support rods of the front set are located in front of a center line which is perpendicular to an insertion direction of semiconductor wafers which are to be mounted on the wafer mount groove portions. Horizontal sections of the wafer mount groove portions of the support rods have a polygonal shape which does not have an acute angle of 90.degree. or less.

Abstract: A germanium layer 19 is melted on top of a starting polycrystalline silicon ingot 18, at a temperature below the melting point of pure silicon. Silicon is dissolved at the interface and floats to the top of the germanium melt to form a silicon melt layer 11, from which a crystal 20 can be drawn. The process permits the production of large diameter crystal with low oxygen content and no more than one percent germanium.

Abstract: The invention is aimed at reducing the influence of the pollution from impurities in the wafer to improve the wafer yield on the basis of prevention of the pollution from impurities while occurrence of slip lines in the wafer is minimized to enhance the efficiency of the surface treatment of the wafer loading faces of the vertical wafer board. For example, the surface of the jig for semiconductor wafers which is composed of the substrate of a high purity carbon is formed with a SiC film by the CVD method, said surface being ground by a grinding tool again formed of a SiC film. Hangover particles produced by said grinding operation are subjected to a high temperature oxydizing treatment to be dissolved thereafter. Application of this method to the vertical wafer board realizes that when n times of measurements are conducted for a length of Lmm in the range of L.times.n.gtoreq.100 mm to obtain a result that said SiC film has a maximum surface roughness Rmax. which is maintained constantly below 10 .mu.

Abstract: A heat treatment jig with a silicon carbide coating for production of a semiconductor includes a base material and a silicon carbide film formed on the surface of the base material by a CVD method. The silicon carbide film is formed from a plurality of layers substantially parallel to the surface of the base material, and at least one of the layers is formed as a nucleus formation layer while the other layers are formed as ordinary crystal layers so that crystal growth between the ordinary crystal layers across the nucleus formation layer is discontinuous while crystal growth of the silicon carbide in the ordinary crystal layers are continuous in a direction of thickness of the ordinary crystal layers.

Abstract: A heat treatment is performed in a hydrogen-gas containing atmosphere. A high-purity inert gas having a water content of not more than 2.57 ppm is used as a substitution gas for replacing a wafer-input air atmosphere and for replacing the hydrogen-gas containing atmosphere after the heat treatment.

Abstract: A process of cleaning the interior of a semiconductor substrate containing metallic impurities therein is provided. The semiconductor substrate is heated, with one side or the both sides thereof being in contact with a melt of a metal or an inorganic salt, at a high temperature such that the melt does not react with these semiconductor and the semiconductor is not melted. By this process, the impurities present inside the substrate are removed out of the substrate and the interior thereof is cleaned.

Abstract: A vapor deposition apparatus includes a cylindrical hollow reactor having gas supply ports at its upper portion and an exhaust port at its bottom portion. A rotational substrate holder, which seats a wafer substrate, is concentrically placed inside the reactor. The reactor has a straightening vane having gas holes concentrically positioned at its upper portion. Reaction gas is supplied into the reactor to form a thin film on the surface of the wafer substrate on the rotational substrate holder by vapor deposition. In one embodiment, the straightening vane is configured so that the flow rate of the reaction gas in the center portion covering the area of the wafer substrate and the gas flow rate of the reaction gas in the outer portion of the center portion are different from each other. In another embodiment, the reactor is sectioned into upper and lower portions. The inner diameter of the upper portion is smaller than the inner diameter of the lower portion.