Abstract: The present invention provides a rare earth cold accumulating material particle comprising a rare earth oxide or a rare earth oxysulfide, wherein the rare earth cold accumulating material particle is composed of a sintered body; an average crystal grain size of the sintered body is 0.5 to 5 ?m; a porosity of the sintered body is 10 to 50 vol. %; and an average pore size of the sintered body is 0.3 to 3 ?m. Further, it is preferable that the porosity of the rare earth cold accumulating material particle is 20 to 45 vol. %, and a maximum pore size of the rare earth cold accumulating material particle is 4 ?m or less. Due to this structure, there can be provided a rare earth cold accumulating material having a high refrigerating capacity and a high strength.

Abstract: The present invention provides a rare earth cold accumulating material particle comprising a rare earth oxide or a rare earth oxysulfide, wherein the rare earth cold accumulating material particle is composed of a sintered body; an average crystal grain size of the sintered body is 0.5 to 5 ?m; a porosity of the sintered body is 10 to 50 vol. %; and an average pore size of the sintered body is 0.3 to 3 ?m. Further, it is preferable that the porosity of the rare earth cold accumulating material particle is 20 to 45 vol. %, and a maximum pore size of the rare earth cold accumulating material particle is 4 m or less. Due to this structure, there can be provided a rare earth cold accumulating material having a high refrigerating capacity and a high strength.

Abstract: A magnetic sheet 1 of an embodiment includes a stack of a plurality of magnetic thin strips and resin film parts. The stack includes from 5 to 25 pieces of the magnetic thin strips. The magnetic thin strips are provided with cutout portions each having a width of 1 mm or less (including 0 (zero)). A ratio (B/A) of a total length B of the cutout portions provided to the magnetic thin strip to a total outer peripheral length A of an outer peripheral area of the magnetic thin strip arranged on one of the resin film parts is in a range of from 2 to 25.

Abstract: A neutron grid, comprises: a grid including: a plurality of spacers through which at least a part of first neutrons from a target passes; and a plurality of absorbers to absorb at least a part of second neutrons scattered thorough the target, the spacers and the absorbers being alternately arranged along a first direction and extending along a second direction intersecting with the first direction; and a pair of covers through which at least a part of the first neutrons and at least a part of the second neutrons pass, sandwiching the grid along a third direction intersecting with the first and second directions. A thermal expansion coefficient difference between one of the spacers and one of the absorbers is ±9×10?6/° C. or less, or Young's modulus of the spacer is 100 GPa or more.

Abstract: The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point flexural strength of 500 MPa or higher, wherein assuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, a numerical relation: |t1?t2|?0.30 mm is satisfied, and a warp is formed in the silicon nitride substrate so that the silicon nitride substrate is convex toward the metal plate on one of the front side or the rear side; and warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm. It is preferable that a longitudinal width (L1) of the silicon nitride substrate falls within a range from 10 to 200 mm, and a transverse width (L2) of the silicon nitride substrate falls within a range from 10 to 200 mm.

Abstract: An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

Abstract: According to one embodiment, a tungsten alloy includes a W component and a Hf component including HfC. A content of the Hf component in terms of HfC is 0.1 wt % or more and 3 wt % or less.

Abstract: A rotatable anode target for an X-ray tube (1) of the present invention includes a metallic disc (2) which includes a first crystal structure; a metallic cylinder (3) which is joined with the metallic disc and includes a second crystal structure, where a first average aspect ratio of first crystal grains positioning at a first region within 2 mm from an interface between the metallic disc and the metallic cylinder is less than 2, and a second average aspect ratio of second crystal grains positioning at a second region within 2 mm from the interface is 2 or more and 8 or less. It is thereby possible to provide an X-ray tube target which has high heat release performance and where thermal deformation is difficult to occur.

Abstract: The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point bending strength of 500 MPa or higher, with attachment layers interposed therebetween, wherein assuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, at least one of the thicknesses t1 and t2 is 0.6 mm or larger, a numerical relation: 0.10?|t1?t2|?0.30 mm is satisfied, and warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm. Due to above configuration, TCT properties of the silicon nitride circuit board can be improved even if the thicknesses of the front and rear metal plates are large.

Abstract: The present invention provides a rare earth cold accumulating material particle comprising a rare earth oxide or a rare earth oxysulfide, wherein the rare earth cold accumulating material particle is composed of a sintered body; an average crystal grain size of the sintered body is 0.5 to 5 ?m; a porosity of the sintered body is 10 to 50 vol. %; and an average pore size of the sintered body is 0.3 to 3 ?m. Further, it is preferable that the porosity of the rare earth cold accumulating material particle is 20 to 45 vol. %, and a maximum pore size of the rare earth cold accumulating material particle is 4 ?m or less. Due to this structure, there can be provided a rare earth cold accumulating material having a high refrigerating capacity and a high strength.

Abstract: A light source for myopia prevention article includes a light emitter to emit light having an emission spectrum continuing from a first wavelength of not less than 360 nm nor more than 400 nm to a second wavelength of more than 400 nm.

Abstract: To suppress a decrease in optical output of a scintillator. A scintillator includes a sintered body of 1 mm3 or less that contains a rare earth oxysulfide. In a composition image obtained by observing a cross-section of the sintered body under a scanning electron microscope, the sum of the number of oxide regions that contain at least one of a rare earth oxide different from the rare earth oxysulfide and an impurity metal oxide and the number of sulfide regions that contain at least one of a rare earth sulfide different from the rare earth oxysulfide and an impurity metal sulfide, which exist in a unit area of 500 ?m×500 ?m, is zero or more and five or less. Each of the oxide regions and the sulfide regions has a major axis of zero or more and 100 ?m or less.

Abstract: A rare earth regenerator material particle and a regenerator material particle group having a high long-term reliability, and a superconducting magnet, an examination apparatus, a cryopump and the like using the same are provided. A rare earth regenerator material particle contains a rare earth element as a constituent component, and in the particle, a peak indicating a carbon component is detected in a surface region by an X-ray photoelectron spectroscopy analysis.

Abstract: Provided is a group of rare-earth regenerator material particles having an average particle size of 0.01 to 3 mm, wherein the proportion of particles having a ratio of a long diameter to a short diameter of 2 or less is 90% or more by number, and the proportion of particles having a depressed portion having a length of 1/10 to ½ of a circumferential length on a particle surface is 30% or more by number. By forming the depressed portion on the surface of the regenerator material particles, it is possible to increase permeability of an operating medium gas and a contact surface area with the operating medium gas.

Abstract: A phosphor of an embodiment has a composition represented by a composition formula: NaxRMySzOa, where R represents at least one element selected from the group consisting of Y, La, Gd, and Lu, M represents at least one element selected from the group consisting of Bi, Ce, Eu, and Pr, x is an atomic ratio satisfying 0.93<x<1.07, y is an atomic ratio satisfying 0.00002<y<0.01, z is an atomic ratio satisfying 1.9<z<2.1, and a is an atomic ratio satisfying 0.001<a<0.05.

Abstract: A lighting apparatus according to an embodiment includes a globe, an optical element including a scattering portion inside and transparent to visible light, and a light source disposed to be opposed to a light incident surface of the optical element. The scattering portion is disposed inside the globe.

Abstract: The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point flexural strength of 500 MPa or higher, wherein assuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, a numerical relation: |t1?t2|?0.30 mm is satisfied, and a warp is formed in the silicon nitride substrate so that the silicon nitride substrate is convex toward the metal plate on one of the front side or the rear side; and warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm. It is preferable that a longitudinal width (L1) of the silicon nitride substrate falls within a range from 10 to 200 mm, and a transverse width (L2) of the silicon nitride substrate falls within a range from 10 to 200 mm.

Abstract: A base material is composed of a metal or ceramics, and an aluminum nitride coating is formed on an outermost surface thereof. The aluminum nitride coating is formed by impact sintering and contains fine particles having a particle diameter of 1 ?m or less. A thickness of the aluminum nitride coating is no less than 10 ?m. A film density of the aluminum nitride coating is no less than 90% An area ratio of aluminum nitride particles whose particle boundaries are recognizable existing in a 20 ?m×20 ?m unit area of the aluminum nitride coating is 0% to 90% while an area ratio of aluminum nitride particles whose particle boundaries are unrecognizable is 10% to 100%. Such a component for a plasma apparatus having the aluminum nitride coating can provide a strong resistance to plasma attack and radical attack.

Abstract: An aqueous dispersion of an embodiment includes visible-light responsive photocatalytic composite microparticles containing tungsten oxide and zirconium oxide, and an aqueous dispersion medium in which the photocatalytic composite microparticles are dispersed. In the photocatalytic composite microparticles, a ratio of a mass of the zirconium oxide to a mass of the tungsten oxide is in a range of from 0.05% to 200%, and a D50 particle size in particle size distribution is in a range of from 20 nm to 10 ?m. The aqueous dispersion has pH in a range of from 1 to 9.

Abstract: A magnetic sheet 1 of an embodiment includes a stack of a plurality of magnetic thin strips and resin film parts. The stack includes from 5 to 25 pieces of the magnetic thin strips. The magnetic thin strips are provided with cutout portions each having a width of 1 mm or less (including 0 (zero)). A ratio (B/A) of a total length B of the cutout portions provided to the magnetic thin strip to a total outer peripheral length A of an outer peripheral area of the magnetic thin strip arranged on one of the resin film parts is in a range of from 2 to 25.