Patents Assigned to Toshiba Materials Co., Ltd.
  • Patent number: 10964836
    Abstract: According to one embodiment, a photon counting-type radiation detector includes a first cell and a second cell. The first cell transmits radiation. The second cell is stacked with the first cell. The second cell absorbs the radiation passing through the first cell.
    Type: Grant
    Filed: October 11, 2019
    Date of Patent: March 30, 2021
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD
    Inventors: Kuniyuki Kakushima, Tomoyuki Suzuki, Kazuo Tsutsui, Akito Sasaki, Atsuya Sasaki, Hideaki Hirabayashi, Yoshinori Kataoka
  • Patent number: 10957826
    Abstract: According to one embodiment, a white light source includes a combination of a light emitting diode and phosphors. One of the phosphors is at least a cerium activated yttrium aluminum garnet-based phosphor. There is no light emission spectrum peak at which a ratio of a largest maximum value to a minimum value is greater than 1.9. The largest maximum value is largest among at least one maximum value present in a wavelength range of 400 nm to 500 nm in a light emission spectrum of white light emitted from the white light source. The minimum value is adjacent to the largest maximum value in a longer wavelength side of the light emission spectrum.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: March 23, 2021
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Tatsunori Itoga, Ryoji Tsuda, Naotoshi Matsuda, Yoshitaka Funayama
  • Patent number: 10952317
    Abstract: A ceramic circuit board comprises: a ceramic substrate with a 1.0 mm thickness or less including a first surface and a second surface, the first surface including a first area and a second area; a first metal plate joined to the first area; and a second metal plate joined to the second surface. The second area has a first waviness profile along a first side of the first surface, the first waviness profile having one extreme value or less. The second area has a second waviness profile along a second side of the first surface, the second waviness profile has not less than two nor more than three extreme values.
    Type: Grant
    Filed: February 4, 2020
    Date of Patent: March 16, 2021
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Takayuki Naba, Hiromasa Kato, Keiichi Yano
  • Publication number: 20210069781
    Abstract: A metal powder for 3D printer includes a plurality of metal particles. A particle size distribution of the plurality of metal particles has a maximum peak within particle diameters of 1 ?m to 200 ?m. The particle size distribution gives a difference D90?D10 of 10 ?m or more between D90 and D10, D90 denoting a particle diameter in which a cumulative percentage is 90% in volume proportion, and D10 denoting a particle diameter in which a cumulative percentage is 10% in volume proportion.
    Type: Application
    Filed: November 18, 2020
    Publication date: March 11, 2021
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Masanori MIZOBE, Shinichi YAMAMOTO, Tadashi INO, Tooru TANAKA, Hideshi NAKANO
  • Publication number: 20210068253
    Abstract: A ceramic copper circuit board according to an embodiment includes a ceramic substrate and a first copper part. The first copper part is bonded at a first surface of the ceramic substrate via a first brazing material part. The thickness of the first copper part is 0.6 mm or more. The side surface of the first copper part includes a first sloped portion. The width of the first sloped portion is not more than 0.5 times the thickness of the first copper part. The first brazing material part includes a first jutting portion jutting from the end portion of the first sloped portion. The length of the first jutting portion is not less than 0 ?m and not more than 200 ?m. The contact angle between the first jutting portion and the first sloped portion is 65° or less.
    Type: Application
    Filed: November 11, 2020
    Publication date: March 4, 2021
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Hiromasa KATO, Takashi SANO
  • Patent number: 10935213
    Abstract: According to one embodiment, an illumination device includes a plurality of light emitting elements and a plurality of reflectors. The plurality of reflectors include at least one first reflector and at least one second reflector. The first reflector is provided corresponding to the first region at the center and is provided so that the corresponding light emitting element is positioned within a focal region in the vicinity of a focal point. The second reflector is provided corresponding to the second region, has an angular eccentricity so as to collect light on one region on the optical axis, and is provided so as to be positioned within a margin region in which one of the corresponding light emitting elements is provided at a position farther away than a second focal region in the vicinity of the focal point.
    Type: Grant
    Filed: July 18, 2019
    Date of Patent: March 2, 2021
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Takeshi Morino, Hiroshi Ohno
  • Patent number: 10907081
    Abstract: Provided is a group of rare-earth regenerator material particles having an average particle size of 0.01 to 3 mm, wherein the proportion of particles having a ratio of a long diameter to a short diameter of 2 or less is 90% or more by number, and the proportion of particles having a depressed portion having a length of 1/10 to ½ of a circumferential length on a particle surface is 30% or more by number. By forming the depressed portion on the surface of the regenerator material particles, it is possible to increase permeability of an operating medium gas and a contact surface area with the operating medium gas.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: February 2, 2021
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Katsuhiko Yamada, Keiichi Fuse
  • Patent number: 10886434
    Abstract: A white LED lamp including: a conductive portion; a light emitting diode chip mounted on the conductive portion, for emitting a primary light having a peak wavelength of 360 nm to 420 nm; a transparent resin layer including a first hardened transparent resin, for sealing the light emitting diode chip; and a phosphor layer covering the transparent resin layer, the phosphor layer being formed by dispersing a phosphor powder into a second hardened transparent resin, and the phosphor powder receiving the primary light and radiating a secondary light having a wavelength longer than that of the primary light. An energy of the primary light contained in the radiated secondary light is 0.4 mW/lm or less.
    Type: Grant
    Filed: November 6, 2014
    Date of Patent: January 5, 2021
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Tsutomu Ishii, Hajime Takeuchi, Yasumasa Ooya, Katsutoshi Nakagawa, Yumi Kanno, Masaki Toyoshima, Yasuhiro Shirakawa, Ryo Sakai
  • Patent number: 10872841
    Abstract: The present invention provides a ceramic metal circuit board including a ceramic substrate and metal plates bonded to both surfaces of the ceramic substrate through respective bonding layers, wherein a metal film is provided on a surface of one metal plate bonded to one surface of the ceramic substrate; and at least a part of another metal plate bonded to another surface of the ceramic substrate is not provided with the metal film. Preferably, a protruding portion is formed as a portion of the bonding layer so as to protrude from a side surface of each of the metal plates. According to the above-described configuration, it is possible to provide a ceramic circuit board which is easy to use according to the parts to be bonded and is excellent in heat-cycle resistance characteristics.
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: December 22, 2020
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Takayuki Naba, Hiromasa Kato, Noboru Kitamori
  • Patent number: 10858583
    Abstract: A phosphor of an embodiment has a composition represented by a composition formula: NaxRMySzOa, where R represents at least one element selected from the group consisting of Y, La, Gd, and Lu, M represents at least one element selected from the group consisting of Bi, Ce, Eu, and Pr, x is an atomic ratio satisfying 0.93<x<1.07, y is an atomic ratio satisfying 0.00002<y<0.01, z is an atomic ratio satisfying 1.9<z<2.1, and a is an atomic ratio satisfying 0.001<a<0.05.
    Type: Grant
    Filed: July 2, 2018
    Date of Patent: December 8, 2020
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Daichi Usui, Hirofumi Takemura, Naotoshi Matsuda
  • Publication number: 20200348052
    Abstract: A reduction in a permeability of refrigerant gas is suppressed while increasing a filling factor of regenerator material particles with respect to a stage of a cold head. A cold head includes a stage including regenerator material particle groups, and a metal mesh material partitioning the regenerator material particle groups. The metal mesh material has quadrangular mesh holes each having a length of a long side of 1/10 or more and ½ or less of each of average particle sizes of the regenerator material particle groups.
    Type: Application
    Filed: July 14, 2020
    Publication date: November 5, 2020
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS. CO., LTD.
    Inventors: Katsuhiko YAMADA, Keiichi FUSE
  • Publication number: 20200338543
    Abstract: In one embodiment, an antibacterial material includes at least one microparticles selected from tungsten oxide microparticles and tungsten oxide complex microparticles. The microparticles, which have undergone a test to evaluate viable cell count by inoculating in a test piece, to which the microparticles are adhered in a range of 0.02 mg/cm? or more and 40 mg/cm? or less, at least one bacterium selected from among Staphylococcus aureus, Escherichia coli, Klebsiella pneumoniae, Pseudomonas aeruginosa, methicillin-resistant Staphylococcus aureus, and enterohemorrhagic Escherichia coli, and storing for 24 hours, have an antibacterial activity value R of 0.1 or more expressed by the following: R=log(B1/C1) where, B1 denotes an average value (number) of viable cell count after storing an untreated test piece for 24 hours, and C1 denotes an average value (number) of viable cell count after storing the test piece on which the microparticles are coated for 24 hours.
    Type: Application
    Filed: May 12, 2020
    Publication date: October 29, 2020
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Kayo NAKANO, Akira SATO, Yasuhiro SHIRAKAWA, Keiichi FUSE, Shinya KASAMATSU, Akito SASAKI
  • Patent number: 10818565
    Abstract: A circuit board includes: a ceramic substrate that has a first surface and a second surface; a first metal part that has a first metal plate joined to the first surface and a protrusion projecting from a front surface of the first metal plate; and a second metal part that has a second metal plate joined to the second surface. When the ceramic substrate is equally divided into first to third sections along a longer side direction, V1, V2, V3, V4, V5, and V6 are numbers satisfying formula V4/V1+V6/V3?2(V5/V2), 0.5?V4/V1?2, 0.5?V5/V2?2, and 0.5?V6/V3?2.
    Type: Grant
    Filed: January 25, 2019
    Date of Patent: October 27, 2020
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Hiromasa Kato, Takashi Sano
  • Patent number: 10790214
    Abstract: To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L1/H1 of a first protruding portion of the first bonding layer and L2/H2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less.
    Type: Grant
    Filed: September 18, 2019
    Date of Patent: September 29, 2020
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Takayuki Naba, Hiromasa Kato, Masashi Umehara
  • Patent number: 10787393
    Abstract: The present invention provides a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, wherein the silicon nitride crystal grains are covered with the grain boundary phase and width of the grain boundary phase is 0.2 nm or more. It is preferable that the width of the grain boundary phase is 0.2 nm to 5 nm. Additionally, it is preferable that the silicon nitride sintered body includes 15% by mass or less of the grain boundary phase. According to the above-described configuration, it is possible to provide a high-temperature-resistant silicon nitride sintered body in which degradation of the grain boundary phase under high temperature environment is suppressed. This silicon nitride sintered body is suitable for constituent material of a high-temperature-resistant member, use environment of which is 300° C. or higher.
    Type: Grant
    Filed: March 28, 2016
    Date of Patent: September 29, 2020
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Isao Ikeda, Kai Funaki, Yutaka Abe
  • Patent number: 10753652
    Abstract: A reduction in a permeability of refrigerant gas is suppressed while increasing a filling factor of regenerator material particles with respect to a stage of a cold head. A cold head includes a stage including regenerator material particle groups, and a metal mesh material partitioning the regenerator material particle groups. The metal mesh material has quadrangular mesh holes each having a length of a long side of 1/10 or more and ½ or less of each of average particle sizes of the regenerator material particle groups.
    Type: Grant
    Filed: April 16, 2015
    Date of Patent: August 25, 2020
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Katsuhiko Yamada, Keiichi Fuse
  • Patent number: 10744592
    Abstract: The present invention provides a welding tool member for friction stir welding comprising a silicon nitride sintered body, wherein the silicon nitride sintered body includes an additive component other than silicon nitride in a content of 15% by mass or less, and the additive component includes three or more elements selected from Y, Al, Mg, Si, Ti, Hf, Mo and C. It is preferable that the content of the additive component is 3% by mass or more and 12.5% by mass or less. It is also preferable that the additive component includes four or more elements selected from Y, Al, Mg, Si, Ti, Hf, Mo and C. Due to above structure, there can be provided a welding tool member for friction stir welding having a high durability.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: August 18, 2020
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Isao Ikeda, Kai Funaki, Yutaka Abe
  • Patent number: 10739474
    Abstract: A scintillator array includes a first scintillator element, a second scintillator element, and a reflector provided between the first and second scintillator elements and having a width of 80 ?m or less therebetween. Each scintillator element includes a polycrystal containing a rare earth oxysulfide phosphor, the polycrystal having a radiation incident surface of 1 mm or less×1 mm or less in area. An average crystal grain diameter of the polycrystal is not less than 5 ?m nor more than 30 ?m, the average crystal grain diameter being defined by an average intercept length of crystal grains in an observation image of the polycrystal with a scanning electron microscope. A maximum length or a maximum diameter of defects on the polycrystal is 40 ?m or less.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: August 11, 2020
    Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.
    Inventors: Makoto Hayashi, Hiroyasu Kondo, Hiroshi Ichikawa, Yoshitaka Adachi, Yukihiro Fukuta
  • Publication number: 20200253011
    Abstract: According to one embodiment, there is provided a white light source system. P(?), B(?) and V(?) satisfy an equation (1) below in a wavelength range of 380 nm to 780 nm. The white light source system satisfies an expression (2) below in a wavelength range of 400 nm to 495 nm: ?380780P(?)V(?)d?=?380780B(?)V(?)d???(1) where P(?) is a light emission spectrum of white light, B(?) is a light emission spectrum of blackbody radiation of a color temperature correspond to a color temperature of the white light, and V(?) is a spectrum of a spectral luminous efficiency.
    Type: Application
    Filed: April 21, 2020
    Publication date: August 6, 2020
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Masahiko YAMAKAWA, Noriaki YAGI, Kumpei KOBAYASHI
  • Patent number: 10711186
    Abstract: Embodiments of the present invention provide a phosphor improved in the emission intensity maintenance ratio without impairing the emission intensity and further a light-emitting device employing that phosphor. The phosphor is activated by manganese and has a basic structure comprising at least one element selected from the group consisting of potassium, sodium and calcium; at least one element selected from the group consisting of silicon and titanium; and fluorine. In an IR absorption spectrum of the phosphor, the intensity ratio of the peak in 3570 to 3610 cm?1 to that in 1200 to 1240 cm?1 is 0.1 or less.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: July 14, 2020
    Assignees: Kabushiki Kaisha Toshiba, TOSHIBA MATERIALS CO., LTD.
    Inventors: Ryosuke Hiramatsu, Keiko Albessard, Kunio Ishida, Yasushi Hattori, Masahiro Kato