Abstract: An electrostatic chuck 10 includes a dielectric substrate 100 including a surface 110 on which a wafer W is placed, and an RF electrode layer 140 provided inside the dielectric substrate 100. In a cross-section obtained by cutting the RF electrode layer 140 along a plane perpendicular to the surface 110, a void density calculated as the number of voids 40 per unit area is equal to or larger than 1500/mm2 in the electrostatic chuck 10.

Abstract: A structural member 10 includes a base material 100 formed of a polycrystalline material, and a protective film 200 covering a surface 110 of the base material 100. In a cross section obtained by cutting the base material 100 perpendicular to the surface 110, when an average value of cross-sectional areas of multiple crystal grains 150F exposed on the surface 110 among crystal grains 150 constituting the base material 100 is defined as a first cross-sectional area, and an average value of cross-sectional areas of multiple crystal grains 150B located deeper than the surface 110 among the crystal grains 150 constituting the base material 100 is defined as a second cross-sectional area, the first cross-sectional area is smaller than the second cross-sectional area in the structural member 10.

Abstract: An electrostatic chuck 10 includes a dielectric substrate 100 including a placement surface, and a plurality of conductor layers provided at mutually different height positions inside the dielectric substrate 100. When a total thickness of the respective conductor layers is defined as sd (?m) and a thickness of the dielectric substrate 100 is defined as D (mm), the electrostatic chuck 10 satisfies the following condition: sd <-10.5×D +74.5.

Abstract: An electrostatic chuck 10 includes a dielectric substrate 100 and a base plate 200 including a coolant flow path 250 formed therein through which a coolant passes. In the electrostatic chuck 10, the dielectric substrate 100 and the base plate 200 are joined to each other, and the coolant flow path 250 is a groove G that is formed on a surface 210 on the dielectric substrate 100 side of the base plate 200.

Abstract: An electrostatic chuck 10 includes a dielectric substrate 100, and a heater unit 300 that heats the dielectric substrate 100. The heater unit 300 includes a heat generation layer that generates heat by receiving electric power supplied from outside, an insulating layer 320 that houses the heat generation layer inside, a first conductor plate 310A that is arranged so as to be in contact with the insulating layer 320 from the dielectric substrate 100 side, and a second conductor plate 310B that is arranged so as to be in contact with the insulating layer 320 from a side opposite to the dielectric substrate 100. A through hole 304 is formed in the heater unit 300. In the electrostatic chuck 10, a diameter D1 of the through hole 304 formed in the first conductor plate 310A is smaller than a diameter D2 of the through hole 304 formed in the second conductor plate 310B.

Abstract: An electrostatic chuck 10 includes: a dielectric substrate 100 in which a first gas hole 141 is formed; a heater unit 300 that is joined to a surface 120 on a side opposite to a placement surface in the dielectric substrate 100 and has a second gas hole 302 formed at a position corresponding to the first gas hole 141; a base plate that is joined to a surface on a side opposite to the dielectric substrate 100 in the heater unit 300 and has a third gas hole 203 formed at a position corresponding to the second gas hole 302; and an air-permeable member 500 that is made of an insulator and has air permeability, the air-permeable member 500 being arranged so as to enter both an interior of the second gas hole 302 and an interior of the third gas hole 203.

Abstract: An electrostatic chuck 10 includes a dielectric substrate 100, and a heater unit 300 that heats the dielectric substrate 100. The heater unit 300 includes a heat generation layer that generates heat by receiving electric power supplied from outside, an insulating layer 320 that accommodates the heat generation layer inside, a first conductor plate 310A that is arranged so as to be in contact with the insulating layer 320 from the dielectric substrate 100 side, and a second conductor plate 310B that is arranged so as to be in contact with the insulating layer 320 from a side opposite to the dielectric substrate 100. A through hole 304 is formed in the heater unit 300. In the electrostatic chuck 10, a diameter D2 of the through hole 304 formed in the second conductor plate 310B is larger than a diameter D3 of the through hole 304 formed in the insulating layer 320.

Abstract: A hot water and cold water mixing apparatus includes: a valve body configured to adjust introduction amounts of cold water and hot water by moving in an axial direction; a valve case covering an outer side of the valve body; and an annular partition member arranged between an outer surface of the valve body and an inner surface of the valve case and configured to divide a gap therebetween into a cold water gap and a hot water gap. A groove portion is provided on the inner surface of the valve case. The annular partition member comes into close contact with a side wall of the groove portion and with the outer surface of the valve body and does not come into close contact with the inner surface of the valve case, under a state in which there is a differential pressure between the cold and hot water gaps.

Abstract: According to one embodiment, a semiconductor manufacturing apparatus member includes a base and a particle-resistant layer. The base includes a first surface, a second surface crossing the first surface, and an edge portion connecting the first surface and the second surface. The particle-resistant layer includes a polycrystalline ceramic and covering the first surface, the second surface, and the edge portion. The particle-resistant layer includes a first particle-resistant layer provided at the edge portion, and a second particle-resistant layer provided at the first surface. A particle resistance of the first particle-resistant layer is higher than a particle resistance of the second particle-resistant layer. A thickness of the first particle-resistant layer is thinner than a thickness of the second particle-resistant layer.

Abstract: A flush toilet includes a bowl and a drain trap pipe line. The bowl includes a waste receiving surface for human waste, a rim above the waste receiving surface, a shelf between the waste receiving surface and the rim, and a standing water part such that a standing water surface forms inside the standing water part. The drain trap pipe line is connected to a lower part of the bowl and configured to discharge human waste. The rim includes an inner circumferential surface, and one rim discharge port configured to generate a swirling flow of flush water by discharging the flush water along the inner circumferential surface. The shelf extends along an entire circumference of the bowl. An outer circumference edge of the shelf has a minimum curvature radius in a first region when viewed in plan. A width of the shelf has a minimum in the first region.

Abstract: A flush toilet is configured to discharge human waste by flushing with flush water, and includes a bowl and a drain trap pipe line. The bowl includes a waste receiving surface configured to receive human waste, a rim above the waste receiving surface, and a standing water part below the waste receiving surface such that a standing water surface forms inside the standing water part. The drain trap pipe line is connected to a lower part of the bowl and configured to discharge human waste. The rim includes an inner circumferential surface, and one rim discharge port configured to generate a swirling flow by discharging the flush water along the inner circumferential surface. The waste receiving surface includes an upper part having a concave shape extending around an entire circumference of the bowl, and a lower part having a convex shape extending around the entire circumference of the bowl.

Abstract: An electrostatic chuck in which electrical connection between an internal electrode and a feed terminal can be easily achieved is provided. An electrostatic chuck 10 includes a dielectric substrate 100, an RF electrode 140 provided inside the dielectric substrate 100, a feed terminal 170 arranged on an inner side of a recessed section 160 which is formed on a surface 120 opposite to a placement surface in the dielectric substrate 100, and a connection section 190 configured to electrically connect the RF electrode 140 with the feed terminal 170. In this electrostatic chuck 10, a distance T from a bottom 161 of the recessed section 160 to the RF electrode 140 is larger than 0.05 mm.

Abstract: A toilet device includes a biological information measurement sensor, a controller, a wireless communication part, and a storage part. The biological information measurement sensor is configured to measure biological information. The controller is configured to transmit the biological information to a PDA. The wireless communication part is configured to connect the controller and the PDA by wireless communication. The controller is configured to perform a registration mode of associating identification information identifying the PDA and user information identifying the user, and storing the identification information and the user information in the storage part. The controller is configured to perform a user authentication of designating the user information and the identification information when receiving an authentication signal after performing the registration mode.

Abstract: An electrostatic chuck which can reduce fluctuation in an in-plane temperature distribution of a wafer is provided. An electrostatic chuck 10 includes a dielectric substrate 100 including a surface 110 as a placement surface, an RF electrode 140 provided inside the dielectric substrate 100, a base plate 200 made of metal and joined to the dielectric substrate 100, and a conductive member 400 configured to electrically connect the RF electrode 140 and the base plate 200 to each other. A part of the conductive member 400 is accommodated in a first recessed section 160 formed in a surface 120 on the base plate 200 side of the dielectric substrate 100. An end part on the base plate 200 side of the conductive member 400 abuts against a surface 210 on the dielectric substrate 100 side of the base plate 200, or abuts against a bottom 262 of a second recessed section 260 that is formed in the surface 210 and is shallower than the first recessed section 160.

Abstract: The structural member 10 includes a base material 100 and a protective film 200 including yttria as a main component, the protective film 200 covering the surface 110 of the base material 100. In a diffraction pattern obtained by analyzing the surface 210 of the protective film 200 using X-ray diffraction, when a particle diameter calculated based on a profile of a peak attributed to the (222) plane of a cubic crystal structure is defined as D1, and a particle diameter calculated based on a profile of a peak attributed to the (622) plane of a cubic crystal structure is defined as D2, the structural member has an average value of D1 and D2 of 90 ? or more.

Abstract: A structural member including a protective film having high durability against plasma is provided. The structural member 10 includes a base material 100 and a protective film 200 including yttria as a main component, the protective film 200 covering the surface 110 of the base material 100. In a diffraction pattern obtained by analyzing the surface 210 of the protective film 200 using X-ray diffraction, P1/(P1+P2+P3+P4+P5+P6)>0.

Abstract: A structural member 10 includes: a base material 100; and a protective film 200 that is a film covering a surface 110 of the base material 100 and contains polycrystalline yttria as a main component. When an average value calculated from the particle diameters of crystal particles CP of yttria appearing in a cross-section given by slicing the protective film 200 along a plane parallel to a surface 110 of the base material 100 with weighting by the cross-sectional areas of the crystal particles CP is defined as an average diameter, and a part of the protective film 200 proximity to a surface 210 of the protective film 200 opposite to the base material 100 is defined as a shallow part 201, the average diameter in the shallow part is 80 nm or more.

Abstract: An electrostatic chuck includes a ceramic dielectric substrate and a base plate. The base plate includes a communicating path configured to allow a coolant to pass. The communicating path includes a first flow path part having a pair of side surfaces along a first direction. The first direction is along a flow of the coolant. When viewed along a stacking direction, one side surface of the pair of side surfaces includes a plurality of convex portions and a plurality of concave portions. The plurality of convex portions is convex in a second direction. The second direction is perpendicular to the first direction. The second direction is from the other side surface toward the one side surface of the pair of side surfaces. The plurality of concave portions is convex in an opposite direction of the second direction.