Abstract: A flush toilet includes a bowl and a drain trap pipe line. The bowl includes a waste receiving surface for human waste, a rim above the waste receiving surface, a shelf between the waste receiving surface and the rim, and a standing water part such that a standing water surface forms inside the standing water part. The drain trap pipe line is connected to a lower part of the bowl and configured to discharge human waste. The rim includes an inner circumferential surface, and one rim discharge port configured to generate a swirling flow of flush water by discharging the flush water along the inner circumferential surface. The shelf extends along an entire circumference of the bowl. An outer circumference edge of the shelf has a minimum curvature radius in a first region when viewed in plan. A width of the shelf has a minimum in the first region.

Abstract: A flush toilet is configured to discharge human waste by flushing with flush water, and includes a bowl and a drain trap pipe line. The bowl includes a waste receiving surface configured to receive human waste, a rim above the waste receiving surface, and a standing water part below the waste receiving surface such that a standing water surface forms inside the standing water part. The drain trap pipe line is connected to a lower part of the bowl and configured to discharge human waste. The rim includes an inner circumferential surface, and one rim discharge port configured to generate a swirling flow by discharging the flush water along the inner circumferential surface. The waste receiving surface includes an upper part having a concave shape extending around an entire circumference of the bowl, and a lower part having a convex shape extending around the entire circumference of the bowl.

Abstract: An electrostatic chuck in which electrical connection between an internal electrode and a feed terminal can be easily achieved is provided. An electrostatic chuck 10 includes a dielectric substrate 100, an RF electrode 140 provided inside the dielectric substrate 100, a feed terminal 170 arranged on an inner side of a recessed section 160 which is formed on a surface 120 opposite to a placement surface in the dielectric substrate 100, and a connection section 190 configured to electrically connect the RF electrode 140 with the feed terminal 170. In this electrostatic chuck 10, a distance T from a bottom 161 of the recessed section 160 to the RF electrode 140 is larger than 0.05 mm.

Abstract: A toilet device includes a biological information measurement sensor, a controller, a wireless communication part, and a storage part. The biological information measurement sensor is configured to measure biological information. The controller is configured to transmit the biological information to a PDA. The wireless communication part is configured to connect the controller and the PDA by wireless communication. The controller is configured to perform a registration mode of associating identification information identifying the PDA and user information identifying the user, and storing the identification information and the user information in the storage part. The controller is configured to perform a user authentication of designating the user information and the identification information when receiving an authentication signal after performing the registration mode.

Abstract: An electrostatic chuck which can reduce fluctuation in an in-plane temperature distribution of a wafer is provided. An electrostatic chuck 10 includes a dielectric substrate 100 including a surface 110 as a placement surface, an RF electrode 140 provided inside the dielectric substrate 100, a base plate 200 made of metal and joined to the dielectric substrate 100, and a conductive member 400 configured to electrically connect the RF electrode 140 and the base plate 200 to each other. A part of the conductive member 400 is accommodated in a first recessed section 160 formed in a surface 120 on the base plate 200 side of the dielectric substrate 100. An end part on the base plate 200 side of the conductive member 400 abuts against a surface 210 on the dielectric substrate 100 side of the base plate 200, or abuts against a bottom 262 of a second recessed section 260 that is formed in the surface 210 and is shallower than the first recessed section 160.

Abstract: The structural member 10 includes a base material 100 and a protective film 200 including yttria as a main component, the protective film 200 covering the surface 110 of the base material 100. In a diffraction pattern obtained by analyzing the surface 210 of the protective film 200 using X-ray diffraction, when a particle diameter calculated based on a profile of a peak attributed to the (222) plane of a cubic crystal structure is defined as D1, and a particle diameter calculated based on a profile of a peak attributed to the (622) plane of a cubic crystal structure is defined as D2, the structural member has an average value of D1 and D2 of 90 ? or more.

Abstract: A structural member including a protective film having high durability against plasma is provided. The structural member 10 includes a base material 100 and a protective film 200 including yttria as a main component, the protective film 200 covering the surface 110 of the base material 100. In a diffraction pattern obtained by analyzing the surface 210 of the protective film 200 using X-ray diffraction, P1/(P1+P2+P3+P4+P5+P6)>0.

Abstract: A structural member 10 includes: a base material 100; and a protective film 200 that is a film covering a surface 110 of the base material 100 and contains polycrystalline yttria as a main component. When an average value calculated from the particle diameters of crystal particles CP of yttria appearing in a cross-section given by slicing the protective film 200 along a plane parallel to a surface 110 of the base material 100 with weighting by the cross-sectional areas of the crystal particles CP is defined as an average diameter, and a part of the protective film 200 proximity to a surface 210 of the protective film 200 opposite to the base material 100 is defined as a shallow part 201, the average diameter in the shallow part is 80 nm or more.

Abstract: An electrostatic chuck includes a ceramic dielectric substrate and a base plate. The base plate includes a communicating path configured to allow a coolant to pass. The communicating path includes a first flow path part having a pair of side surfaces along a first direction. The first direction is along a flow of the coolant. When viewed along a stacking direction, one side surface of the pair of side surfaces includes a plurality of convex portions and a plurality of concave portions. The plurality of convex portions is convex in a second direction. The second direction is perpendicular to the first direction. The second direction is from the other side surface toward the one side surface of the pair of side surfaces. The plurality of concave portions is convex in an opposite direction of the second direction.

Abstract: A structural member 10 has a base material 100 and a protective film 200 covering the surface S1 of the base material 100. When a section obtained by cutting the base material 100 perpendicularly to the surface S1 thereof is defined as a cross-section, a shape of a line corresponding to the surface S1 of the base material 100 in the cross-section is defined as a surface shape, and Fourier transformation is performed on a function representing the surface shape, and the transformed function is drawn as a graph with wavelength (?m) on a horizontal axis, an average slope of the graph in a range where the wavelength is 30 ?m or less is 0.0050 or less.

Abstract: A structural member 10 includes a base material 100 and a protective film 200 formed by depositing a material while applying an impact force to a surface 110 of the base material 100. Provided that an index indicating a degree of a local denseness of the protective film 200 is defined as a denseness index, the value of the denseness index at a first portion that is a portion of the protective film 200 including an outer surface 210 thereof is 50% or more of the value of the denseness index at a second portion that is a portion of the protective film 200 closer to a base material 100 side thereof than the first portion.

Abstract: An electrostatic chuck includes: a dielectric substrate on which at least one first gas hole is formed; a base plate on which at least one second gas hole is formed; and a joining layer which is provided between the dielectric substrate and the base plate and which is formed of an insulating material. A first opening being an end of the at least one first gas hole is formed on a surface of the dielectric substrate. A second opening being an end of the at least one second gas hole is formed at a position which differs from the at least one first opening on a surface of the base plate. A communication groove is formed on the surface of the base plate.

Abstract: A toilet device includes a toilet unit including a toilet seat, a biological information measuring part configured to measure biological information of a user, a wireless communication part configured to wirelessly communicate with a personal digital assistant of the user, and a controller configured to transmit the biological information to the personal digital assistant of the user; the controller is configured to provide the transmission suspension period between a start of the user using the toilet unit and a transmission of the biological information; and the controller is configured to set the transmission period when transmitting the biological information.

Abstract: A toilet device includes a casing and a deodorizing unit provided inside the casing and configured to deodorize air in a toilet room. The deodorizing unit includes a duct and a fan configured to suction air into the duct. The duct includes a first extending portion extending from the casing, a second extending portion extending from the casing at a position different from a position of the first extending portion, and a connection portion connecting the first extending portion and the second extending portion. The first extending portion, the second extending portion, and the connection portion are integrally formed with the casing.

Abstract: An electrostatic chuck 10 includes a dielectric substrate 100 including a surface 110 as a mounting surface, a heater 140 provided inside the dielectric substrate 100, and an attraction electrode 130 provided inside the dielectric substrate 100 at a position closer to the surface 110 side than the heater 140. Both the heater 140 and the attraction electrode 130 are configured such that a plurality of ceramic particles CP are disposed inside a conductor. The heater 140 is thicker than the attraction electrode 130. In the electrostatic chuck 10, an average particle diameter of the ceramic particles CP disposed inside the heater 140 is 50% or more and 150% or less of an average particle diameter of the ceramic particles CP disposed inside the attraction electrode 130.

Abstract: An electrostatic chuck that can reduce fluctuation in an in-plane temperature distribution of a wafer is provided. An electrostatic chuck 10 includes a dielectric substrate 100 on which a plurality of gas holes 140 are formed, a base plate 200 supporting the dielectric substrate 100, and a joining layer 300 joining the dielectric substrate 100 with the base plate 200. The joining layer 300 includes a first joining layer 310, and a second joining layer 320 surrounding the first joining layer 310 in an annular shape on an outer peripheral side. A thermal conductivity of the second joining layer 320 is higher than a thermal conductivity of the first joining layer 310.

Abstract: An electrostatic chuck includes a dielectric substrate including a first part which includes a surface as a placement surface, and a second part protruding from an outer peripheral end of the first part further toward an outer peripheral side and being thinner than the first part. A base plate joined to the dielectric substrate. A joining layer joins the dielectric substrate with the base plate. The joining layer includes a first joining layer, and a second joining layer surrounding the first joining layer in an annular shape on an outer peripheral side. A thermal conductivity of the second joining layer is higher than a thermal conductivity of the first joining layer. In the electrostatic chuck, an end part on an inner peripheral side of the second joining layer is located at a position not overlapping with the first part in top view.