Abstract: A sanitary washing device includes a nozzle unit configured to advance and retreat between a toilet bowl and a casing, and a support portion configured to slidably support the nozzle unit. The nozzle unit is curved convexly upward and includes a nozzle cover configured to advance and retreat along a track having an arc shape. The support portion includes a groove portion extending in an advance/retreat direction of the nozzle unit, and a rail portion extending in the advance/retreat direction of the nozzle unit at a position different from a position of the groove portion. The nozzle unit includes a protruding portion held sandwiched by the groove portion in an up-down direction and configured to come into line contact with the groove portion, and a recessed portion held at either side of the rail portion in the up-down direction.

Abstract: A sanitary washing device includes a casing and a nozzle unit. The nozzle unit advances and retreats between the casing and a toilet. The nozzle unit is curved to be upwardly convex and advances and retreats along an arc-like trajectory. The nozzle unit includes a first flow channel through which water flows and a second flow channel connected to the first flow channel. A water flow direction of the second flow channel in a longitudinal direction of the nozzle unit is different from a water flow direction of the first flow channel in the longitudinal direction.

Abstract: An electrostatic chuck 10 includes a dielectric substrate 100 and a base plate 200 joined to the dielectric substrate 100. The dielectric substrate 100 is formed of a material containing alumina as a principal component. The base plate 200 is formed of a material containing aluminum nitride as a principal component.

Abstract: A toilet seat device according to an embodiment is a toilet seat device configured to be attached to an upper part of a closet bowl on which a bowl part for receiving excrement is formed, and includes: a toilet seat upper plate constituting a seating surface on which a user sits; a toilet seat bottom plate joined with the toilet seat upper plate to be opposed to an upper part of the closet bowl; a heating device disposed between the toilet seat upper plate and the toilet seat bottom plate to heat the toilet seat upper plate; and a detection device disposed on the toilet seat to optically detect the excrement. The detection device is arranged in a non-contact manner with respect to the heating device.

Abstract: A flush toilet includes a reservoir tank, a bowl, a rim spout port, a discharge trap conduit, a jet spout port configured to spout flush water toward an inlet of the discharge trap conduit, a jet water conduit configured to supply the flush water from the reservoir tank to the jet spout port, and a discharge device configured to supply or stop supplying the flush water to the jet water conduit, wherein the flush water is spouted at a first flow rate from the jet spout port when the discharge device is driven and the flush water in the reservoir tank flows into the jet water conduit and, after spouting of the first flow rate ends, the flush water is spouted at a second flow rate from the jet spout port due to the flush water retained in the jet water conduit flowing toward the jet spout port.

Abstract: An electrostatic chuck 10 includes a dielectric substrate 100, a base plate 200 supporting the dielectric substrate 100, and a joining layer 300 joining the dielectric substrate 100 with the base plate 200. The dielectric substrate 100 is formed of a material containing alumina as a principal component. The base plate 200 is formed of a material containing aluminum nitride as a principal component.

Abstract: According to one embodiment, a semiconductor manufacturing apparatus member is used inside a chamber of a semiconductor manufacturing apparatus. The member includes a base material and a ceramic layer located on the base material. The base material includes a first surface, a second surface, and at least one hole extending through the first and second surfaces. The at least one hole includes a first, a second and a third hole part. The first hole part is continuous with the first surface and is oblique. The second hole part is between the second surface and the first hole part. The third hole part is between the first hole part and the second hole part and is oblique. The ceramic layer includes a first part located on the first surface and a second part located on the first hole part.

Abstract: A siphon jet-type flush toilet includes a toilet main body including a bowl portion configured to receive waste, a drain trap conduit connected to a lower portion of the bowl portion and configured to discharge waste, a jet water spout port at the lower portion configured to eject flush water toward an inlet of the drain trap conduit, and a jet water conduit configured to guide the flush water to the spout port; a flush water tank configured to store the flush water for the toilet main body and having a drain port configured to discharge the flush water to the toilet main body; a drain valve device configured to open and close the drain port; and a water guide member provided below the drain port and configured to guide at least a portion of the flush water discharged from the drain port toward the jet water conduit.

Abstract: A flush toilet includes a toilet main body including a bowl portion configured to receive waste, a jet water spout port configured to eject flush water, a jet water conduit configured to guide the flush water to the jet water spout port, and a drain trap conduit; a flush water tank configured to store the flush water to be supplied to the toilet main body, the flush water tank having a jet drain port configured to discharge the stored flush water to the toilet main body; a jet drain valve; a water guide member provided below the jet drain port of the flush water tank and configured to guide the flush water from the jet drain port to the jet water conduit; and a fixing portion configured to fix the water guide member to the toilet main body. The fixing portion is provided inside the jet drain port.

Abstract: An electrostatic chuck 10 includes a dielectric substrate 100 including a surface 110 on which a wafer W is placed, and an RF electrode layer 140 provided inside the dielectric substrate 100. In a cross-section obtained by cutting the RF electrode layer 140 along a plane perpendicular to the surface 110, a void density calculated as the number of voids 40 per unit area is equal to or larger than 1500/mm2 in the electrostatic chuck 10.

Abstract: A structural member 10 includes a base material 100 formed of a polycrystalline material, and a protective film 200 covering a surface 110 of the base material 100. In a cross section obtained by cutting the base material 100 perpendicular to the surface 110, when an average value of cross-sectional areas of multiple crystal grains 150F exposed on the surface 110 among crystal grains 150 constituting the base material 100 is defined as a first cross-sectional area, and an average value of cross-sectional areas of multiple crystal grains 150B located deeper than the surface 110 among the crystal grains 150 constituting the base material 100 is defined as a second cross-sectional area, the first cross-sectional area is smaller than the second cross-sectional area in the structural member 10.

Abstract: An electrostatic chuck 10 includes a dielectric substrate 100 including a placement surface, and a plurality of conductor layers provided at mutually different height positions inside the dielectric substrate 100. When a total thickness of the respective conductor layers is defined as sd (?m) and a thickness of the dielectric substrate 100 is defined as D (mm), the electrostatic chuck 10 satisfies the following condition: sd <-10.5×D +74.5.

Abstract: An electrostatic chuck 10 includes a dielectric substrate 100 and a base plate 200 including a coolant flow path 250 formed therein through which a coolant passes. In the electrostatic chuck 10, the dielectric substrate 100 and the base plate 200 are joined to each other, and the coolant flow path 250 is a groove G that is formed on a surface 210 on the dielectric substrate 100 side of the base plate 200.

Abstract: An electrostatic chuck 10 includes a dielectric substrate 100, and a heater unit 300 that heats the dielectric substrate 100. The heater unit 300 includes a heat generation layer that generates heat by receiving electric power supplied from outside, an insulating layer 320 that houses the heat generation layer inside, a first conductor plate 310A that is arranged so as to be in contact with the insulating layer 320 from the dielectric substrate 100 side, and a second conductor plate 310B that is arranged so as to be in contact with the insulating layer 320 from a side opposite to the dielectric substrate 100. A through hole 304 is formed in the heater unit 300. In the electrostatic chuck 10, a diameter D1 of the through hole 304 formed in the first conductor plate 310A is smaller than a diameter D2 of the through hole 304 formed in the second conductor plate 310B.

Abstract: An electrostatic chuck 10 includes: a dielectric substrate 100 in which a first gas hole 141 is formed; a heater unit 300 that is joined to a surface 120 on a side opposite to a placement surface in the dielectric substrate 100 and has a second gas hole 302 formed at a position corresponding to the first gas hole 141; a base plate that is joined to a surface on a side opposite to the dielectric substrate 100 in the heater unit 300 and has a third gas hole 203 formed at a position corresponding to the second gas hole 302; and an air-permeable member 500 that is made of an insulator and has air permeability, the air-permeable member 500 being arranged so as to enter both an interior of the second gas hole 302 and an interior of the third gas hole 203.

Abstract: An electrostatic chuck 10 includes a dielectric substrate 100, and a heater unit 300 that heats the dielectric substrate 100. The heater unit 300 includes a heat generation layer that generates heat by receiving electric power supplied from outside, an insulating layer 320 that accommodates the heat generation layer inside, a first conductor plate 310A that is arranged so as to be in contact with the insulating layer 320 from the dielectric substrate 100 side, and a second conductor plate 310B that is arranged so as to be in contact with the insulating layer 320 from a side opposite to the dielectric substrate 100. A through hole 304 is formed in the heater unit 300. In the electrostatic chuck 10, a diameter D2 of the through hole 304 formed in the second conductor plate 310B is larger than a diameter D3 of the through hole 304 formed in the insulating layer 320.

Abstract: A hot water and cold water mixing apparatus includes: a valve body configured to adjust introduction amounts of cold water and hot water by moving in an axial direction; a valve case covering an outer side of the valve body; and an annular partition member arranged between an outer surface of the valve body and an inner surface of the valve case and configured to divide a gap therebetween into a cold water gap and a hot water gap. A groove portion is provided on the inner surface of the valve case. The annular partition member comes into close contact with a side wall of the groove portion and with the outer surface of the valve body and does not come into close contact with the inner surface of the valve case, under a state in which there is a differential pressure between the cold and hot water gaps.

Abstract: According to one embodiment, a semiconductor manufacturing apparatus member includes a base and a particle-resistant layer. The base includes a first surface, a second surface crossing the first surface, and an edge portion connecting the first surface and the second surface. The particle-resistant layer includes a polycrystalline ceramic and covering the first surface, the second surface, and the edge portion. The particle-resistant layer includes a first particle-resistant layer provided at the edge portion, and a second particle-resistant layer provided at the first surface. A particle resistance of the first particle-resistant layer is higher than a particle resistance of the second particle-resistant layer. A thickness of the first particle-resistant layer is thinner than a thickness of the second particle-resistant layer.

Abstract: A flush toilet includes a bowl and a drain trap pipe line. The bowl includes a waste receiving surface for human waste, a rim above the waste receiving surface, a shelf between the waste receiving surface and the rim, and a standing water part such that a standing water surface forms inside the standing water part. The drain trap pipe line is connected to a lower part of the bowl and configured to discharge human waste. The rim includes an inner circumferential surface, and one rim discharge port configured to generate a swirling flow of flush water by discharging the flush water along the inner circumferential surface. The shelf extends along an entire circumference of the bowl. An outer circumference edge of the shelf has a minimum curvature radius in a first region when viewed in plan. A width of the shelf has a minimum in the first region.

Abstract: A flush toilet is configured to discharge human waste by flushing with flush water, and includes a bowl and a drain trap pipe line. The bowl includes a waste receiving surface configured to receive human waste, a rim above the waste receiving surface, and a standing water part below the waste receiving surface such that a standing water surface forms inside the standing water part. The drain trap pipe line is connected to a lower part of the bowl and configured to discharge human waste. The rim includes an inner circumferential surface, and one rim discharge port configured to generate a swirling flow by discharging the flush water along the inner circumferential surface. The waste receiving surface includes an upper part having a concave shape extending around an entire circumference of the bowl, and a lower part having a convex shape extending around the entire circumference of the bowl.