Abstract: This application discloses correction circuitry for correcting a phase distortion in an amplification circuit by measuring an amplitude distortion and controlling a phase shifting component based upon the measured amplitude distortion. In one embodiment, a first amplitude distortion sensor is coupled to a first node of an amplification circuit, and a first phase shifter is coupled to a second node of the amplification circuit. Additionally, a first control circuit is coupled to the first amplitude sensor and to the first phase shifter. The first control circuit is configured to correlate a first amplitude distortion measured by the first amplitude distortion sensor to a first inferred phase distortion, and to generate a first phase correction signal based upon the first inferred phase distortion, and is configured to send the first phase correction signal towards the first phase shifter.

Abstract: Embodiments include an apparatus, system, and method related to a switching circuit. In some embodiments, the switching circuit may include first switch including an n-channel field effect transistor (FET) in the signal path. The switching circuit may further include a second switch in shunt to the first switch. The second switch may include a discharge transistor to provide a discharge path for a body of a switch transistor. Other embodiments may be described and claimed.

Abstract: Embodiments include but are not limited to semiconductor devices including a barrier layer, a gallium nitride channel layer having a Ga-face coupled with the barrier layer, and a thermoconductive layer having a thermal conductivity of at least 500 W/(m·K) within 1000 nanometers of a Ga-face of the gallium nitride channel layer. The semiconductor device may be a high-electron-mobility transistor or a semiconductor wafer. Methods for making the same also are described.

Abstract: Embodiments described herein may provide a temperature-compensated surface acoustic wave (TCSAW) device, a method of fabricating a TCSAW device, and a system incorporating a TCSAW device. The TCSAW device may include a pyroelectric substrate, a plurality of electrodes formed on a first surface of the pyroelectric substrate, an amorphous silicon layer formed over the plurality of electrodes, and a temperature compensating layer formed over the amorphous silicon layer.

Abstract: Embodiments provide a clock generation circuit with a first phase-locked loop (PLL) and a second PLL that are coupled in parallel with one another and receive a same feedback signal. The first and second PLLs generate respective output signals that are combined to generate an output clock signal. A version of the output clock signal may be passed back to the first and second PLLs as the feedback signal. In some embodiments, the second PLL may include a switch to selectively close the second PLL after the first PLL has locked. In some embodiments, the second PLL may include a bulk acoustic wave (BAW) voltage-controlled oscillator (VCO) and the first PLL may include a different type of VCO.

Abstract: A power combining apparatus includes an output waveguide section having inner and outer coaxial conductors, wherein an outer surface of the inner conductor and an inner surface of the outer conductor each includes a substantially linear taper, a center waveguide section having an input, an output, and a plurality of antenna elements, the output of the center waveguide section being coupled to the output waveguide section, and an output waveguide section coupled to the output of the center waveguide section.

Abstract: A passive coaxial signal power splitter apparatus includes an input port, an input coaxial waveguide section coupled to the input port, a guided wave structure coupled to the input coaxial waveguide section, a plurality of antenna elements arranged in the guided wave structure, and an output port coupled to each of the antenna elements. A passive coaxial signal power combiner includes a plurality of input ports, a guided wave structure coupled to the plurality of input ports, a plurality of antenna elements in the guided wave structure, wherein each antenna element is coupled to one or more of the input ports, a coaxial waveguide section coupled to the guided wave structure, and an output port coupled to the coaxial waveguide section.

Abstract: A power combining apparatus includes a waveguide structure and a plurality of antenna elements arranged in the waveguide structure, wherein each of the antenna elements comprises a center planar antenna layer, two outer planar antenna layers arranged on opposite sides of the center planar antenna layer, a non-conductive layer between the center planar antenna layer and one of the outer planar antenna layers, and another non-conductive layer between the center planar antenna and the other one of the outer planar antenna layers. The power combining apparatus includes a waveguide structure having an input, an output, and a plurality of antenna elements arranged in the waveguide structure, wherein each antenna element is configured to transform an electric field direction of an electromagnetic field by substantially 90 degrees rotation about a longitudinal axis of the waveguide structure, wherein a bandwidth of the antenna is less than, equal to, or greater than a decade of frequency range.

Abstract: Embodiments include an apparatus, system, and method related to a switch circuit. Specifically, embodiments relate to a low noise amplifier (LNA) drain switch circuit that includes a first field effect transistor (FET) where the drain contact of the first FET is coupled with a gate contact of a second FET. The drain contact of the second FET may also be coupled with the gate of the second FET through a resistor. The source contact of the second FET may be coupled with a diode which may be coupled with an LNA.

Abstract: Embodiments include but are not limited to apparatuses and systems including microelectronic devices including a package substrate, a plurality of electronic components disposed on and electrically coupled with the package substrate at one or more sides of the package substrate, one or more hollow cavity sheet molds surrounding the plurality of electronic components and coupled with one or more sides of the package substrate, and a plurality of through-mold vias to couple the package substrate with an external surface of at least one of the one or more hollow cavity sheet molds. The microelectronic device may be a chip-scale package or module. Methods and systems for making the same also are described.

Abstract: Embodiments provide a limiter circuit that includes a power splitter coupled with a plurality of antiparallel diode pairs. In some embodiments, the power splitter may be part of a first stage of the limiter circuit. Other embodiments may be described and claimed.

Abstract: In embodiments, a piezoelectric acoustic wave (PBAW) device may include a substrate and a resonator comprising a plurality of electrodes coupled with the surface of the substrate. A dielectric overcoat may be disposed over the substrate and the resonator. In embodiments, and electrode in the resonator electrode may have a width that is based at least in part on a period of the resonator. By selecting the width of the electrode based at least in part on the period of the resonator, a spurious-mode of the passband of the PBAW device may be suppressed.

Abstract: Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device includes a diffusion control layer as part of an emitter epitaxial structure. The IC device may utilize a common metallization scheme to simultaneously form an emitter contact and a base contact. Other embodiments may also be described and/or claimed.

Abstract: Embodiments of apparatuses, systems and methods relating to temperature compensated bulk acoustic wave devices. In some embodiments, temperature compensated bulk acoustic wave devices are described with an over-moded reflector layer.

Abstract: Various embodiments provide a bias circuit for a radio frequency (RF) power amplifier (PA) to provide a direct current (DC) bias voltage, with bias boosting, to the RF PA. The bias circuit may include a bias transistor that forms a current mirror with an amplifier transistor of the RF PA. The bias circuit may further include a first resistor coupled between the gate terminal and the drain terminal of the bias transistor to block RF signals from the gate terminal of the bias transistor. The bias circuit may further include a second resistor coupled between the drain terminal of the bias transistor and the RF PA (e.g., the gate terminal of the amplifier transistor). An amount of bias boosting of the DC bias voltage provided by the bias circuit may be based on an impedance value of the second resistor.

Abstract: Embodiments provide a switching device including one or more field-effect transistors (FETs). In embodiments, a body-bias circuit may derive a bias voltage based on a radio frequency signal applied to a switch field-effect transistor and apply the bias voltage to the body terminal of the switch field-effect transistor.

Abstract: Embodiments described herein may provide an acoustic wave device, a method of fabricating an acoustic wave device, and a system incorporating an acoustic wave device. The acoustic wave device may include a transducer disposed on a substrate, with a contact coupled with the transducer. The acoustic wave device may further include a wall layer and cap that define an enclosed opening around the transducer. A via may be disposed through the cap and wall layer over the contact, and a top metal may be disposed in the via. The top metal may form a pillar in the via and a pad on the cap above the via. The pillar may provide an electrical connection between the pad and the contact. In some embodiments, the acoustic wave device may be formed as a wafer-level package on a substrate wafer.

Abstract: Various embodiments may provide a termination element for a radio frequency (RF) power amplifier module. The termination element may include a resistive body having a first end, a second end, and first and second edges running from the first end to the second end opposite one another. The termination element may further include a first ground contact coupling the first end of the resistive body to a ground potential, and a second ground contact coupling the second end of the resistive body to the ground potential. The termination element may further include a conductive contact extending into the resistive body through the first edge, wherein an end of the conductive contact that is closest to the second edge is remotely disposed from the second edge by a gap.

Abstract: Embodiments provide a switching device including one or more cells. In embodiments, a cell may include a switch field-effect transistor (FET) and a source-follower FET, coupled between a gate and a body of the switch FET. Other embodiments may be described and claimed.

Abstract: Embodiments include but are not limited to apparatuses and systems including a quadrature lattice matching network including first path having a series inductor and a shunt inductor, and a second path having a series capacitor and a shunt capacitor. Other embodiments may be described and claimed.