Abstract: Embodiments of circuits, apparatuses, and systems for a matching network having a switchable capacitor bank are disclosed. Other embodiments may be described and claimed.
Abstract: Disclosed embodiments include a high electron mobility transistor (HEMT) with an indium gallium nitride layer set as one of a plurality of barrier sublayers and methods for forming such a HEMT. Other embodiments are also be described and claimed.
Abstract: A piezoelectric layer is coupled to a bottom electrode in a method of fabricating a piezoelectric resonator. A bottom metal layer of a top electrode is deposited on the piezoelectric layer. The bottom metal layer is patterned and etched. A top metal layer of the top electrode is deposited on the etched bottom metal layer. The top metal layer is patterned and etched. An interconnect metal layer is deposited on the etched top metal layer and the piezoelectric layer such that the interconnect metal layer isolates the bottom metal layer from subsequent etch steps.
Type:
Grant
Filed:
August 6, 2008
Date of Patent:
June 19, 2012
Assignee:
TriQuint Semiconductor, Inc.
Inventors:
Haim Ben Hamou, Ralph N. Wall, Guillaume Bouche
Abstract: An RF system includes a power amplifier with output impedance and a BAW filter with an input impedance and output impedance. A matching network includes an inductance connecting the power amplifier to the BAW filter and an impedance transformation ratio of at least 1:10 is provided at the output impedance of the power amplifier to the output impedance of the BAW filter.
Type:
Grant
Filed:
March 30, 2009
Date of Patent:
June 12, 2012
Assignee:
Triquint Semiconductor, Inc.
Inventors:
Robert Aigner, Gernot G. Fattinger, Mikhail S. Shirokov, Jun C. Jadormio
Abstract: A heterojunction bipolar transistor (HBT) device and system having electrostatic discharge ruggedness, and methods for making the same, are disclosed. An HBT device having electrostatic discharge ruggedness may include one or more emitter fingers including an emitter layer, a transition layer formed over the emitter layer, and an emitter cap layer formed over the transition layer.
Type:
Grant
Filed:
May 15, 2008
Date of Patent:
June 5, 2012
Assignee:
TriQuint Semiconductor, Inc.
Inventors:
Timothy Henderson, Jeremy Middleton, John Hitt
Abstract: According to an embodiment, a method is provided that includes: adapting the impedance of the load dependent on working conditions of the active device using a controllable output-side adaptation network coupled between an output-side terminal of a transformer and an output-side node, to generate an adapted impedance of the load, adjusting the adapted impedance independent of the working conditions of the active device, using the transformer including a first inductor having a first terminal to receive the output of the active device via the input-side node, a second inductor having an output-side terminal, where the second inductor is magnetically coupled to the first inductor.
Abstract: Embodiments of circuits, apparatuses, and systems for an overdrive protection circuit arranged at an input to a primary power transistor to protect against overdrive conditions, where the overdrive protection circuit includes a sensing resistor. Other embodiments may be described and claimed.
Type:
Grant
Filed:
May 26, 2010
Date of Patent:
April 24, 2012
Assignee:
TriQuint Semiconductor, Inc.
Inventors:
Xiaopeng Sun, Mehra Mokalla, Wenlong Ma, Barry Jia-Fu Lin
Abstract: Embodiments of circuits and systems for a harmonic tuning network coupled with a radio frequency (RF) push-pull power amplifier to terminate both second- and third-harmonic energies are disclosed. Other embodiments may also be described and claimed.
Abstract: Embodiments include but are not limited to apparatuses and systems including a microelectronic device including a die having a first surface and a second surface opposite the first surface, a conductive pillar formed on the first surface of the die, and an encapsulant material encasing the die, including covering the first surface, the second surface, and at least a portion of a side surface of the conductive pillar. Methods for making the same also are described.
Type:
Application
Filed:
October 3, 2011
Publication date:
April 5, 2012
Applicant:
TRIQUINT SEMICONDUCTOR, INC.
Inventors:
Frank J. Juskey, Paul Bantz, Otto Berger
Abstract: In an embodiment, set forth by way of example and not limitation, a Bragg mirror includes a first bi-layer of a first thickness and a second bi-layer of a second thickness which is different from the first thickness. In this exemplary embodiment, the first bi-layer consists essentially of a first high impedance layer and a first low impedance layer, and the second bi-layer of a second thickness which is different from the first thickness, the second bi-layer consisting essentially of a second high impedance layer and a second low impedance layer. Preferably, the first bi-layer is configured to substantially reflect a first wavelength and the second bi-layer is configured to substantially reflect a second wavelength different from the first wavelength.
Abstract: An apparatus and method is disclosed for providing an electrostatic discharge protection circuit for compound semiconductor devices and circuits. The electrostatic discharge protection circuit comprises a first terminal and a second terminal. The electrostatic discharge protection circuit further comprises a transistor shunt element that is operably coupled between the first terminal and the second terminal; the transistor shunt element is capable of providing a bi-directional discharge path between the first terminal and the second terminal. The electrostatic discharge protection circuit further comprises a shut-off element that is operably coupled with the second terminal; the shut-off element is capable of keeping the transistor shunt element turned-off.
Abstract: Embodiments of apparatuses, articles, methods, and systems for a monolithic microwave integrated circuit with a substrate having a diamond layer are generally described herein. Other embodiments may be described and claimed.
Abstract: Embodiments of apparatuses, methods, and systems for a radio frequency amplification circuit utilizing a variable voltage generator are generally described herein. Other embodiments may be described and claimed.
Abstract: An apparatus and method to improve broadband amplifier linearization. The present circuits make use of pre-distortion techniques to improve the 3rd order distortion of an amplifier to reduce the amount of DC power required to achieve a given system requirement. In addition, the amplifiers have broadband characteristics which lend themselves to simplified pre-distortion. A pre-distortion linearizer circuit is connected across the input terminals of an amplifier. The linearizer circuit includes multiple diodes to improve the clipping performance of the linearizer. In addition, RC circuits align the phase of the linearizer distortion to be opposite that of the amplifier.
Abstract: Embodiments of circuits, devices, and methods related to a radio frequency switch are disclosed. In various embodiments, a circuit may comprise a series path including a series transistor to be switched on during a first mode of operation; a shunt path including a shunt transistor to be switched off during the first mode of operation; and a return path including a return transistor to be switched on during the first mode of operation. Other embodiments may also be described and claimed.
Abstract: Embodiments of a microelectronic device including laminate baluns are generally described herein. A microelectronic device may include a laminate structure including a plurality of laminate layers, a first balun element disposed in the laminate structure, and a second balun element disposed in the laminate structure, wherein at least a portion of the first balun element is situated over the second balun element. Other embodiments may be described and claimed.
Abstract: A piezoelectric boundary acoustic wave (PBAW) device includes a slotted dielectric body disposed over one surface of a piezoelectric body and electrodes forming an IDT at the interface between the piezoelectric body and the dielectric body. The thickness of the electrode is set so that the acoustic velocity of the boundary acoustic waves is less than acoustic waves propagating in the piezoelectric body.
Type:
Grant
Filed:
July 29, 2009
Date of Patent:
December 27, 2011
Assignee:
Triquint Semiconductor, Inc.
Inventors:
Benjamin P. Abbott, Marc Solal, Michael Wang, Kenya Hashimoto
Abstract: Embodiments of circuits, apparatuses, and systems for an overdrive protection circuit arranged at an input to a primary power transistor to protect against overdrive conditions, where the overdrive protection circuit includes a sensing resistor. Other embodiments may be described and claimed.
Type:
Application
Filed:
May 26, 2010
Publication date:
December 1, 2011
Applicant:
TRIQUINT SEMICONDUCTOR, INC.
Inventors:
Xiaopeng Sun, Mehra Mokalla, Wenlong Ma, Barry Jia-Fu Lin
Abstract: Embodiments of circuits, apparatuses, and systems for a protection circuit to protect against overdrive or overvoltage conditions. Other embodiments may be described and claimed.
Type:
Application
Filed:
May 24, 2011
Publication date:
December 1, 2011
Applicant:
TRIQUINT SEMICONDUCTOR, INC.
Inventors:
Jingshi Yao, Peter Hu, Xiaopeng Sun, Barry Jia-Fu Lin, Mehra Mokalla