Abstract: A diode laser arrangement includes at least one emitter, first and second cooling devices and a first connecting layer. The emitter is configured to emit a laser beam and is disposed between the first and second cooling devices. The first and second cooling devices are each configured for cooling the emitter. The emitter is connected to the first cooling device by the first connecting layer, and the first connecting layer has a connecting material or is composed of a connecting material selected from a group including gold, a gold alloy, silver, a silver alloy, a silver sintered material, copper, a copper alloy, nickel, a nickel alloy, palladium, a palladium alloy, platinum, a platinum alloy, rhodium, a rhodium alloy, iridium, an iridium alloy, germanium, a germanium alloy, tin, a tin alloy, aluminum, an aluminum alloy, indium, an indium alloy, lead and a lead alloy.

Abstract: Methods, devices, and systems for laser diode packaging platforms are provided. In one aspect, a laser diode assembly includes a heat sink and a plurality of laser diode units horizontally spaced apart from one another on the heat sink. Each laser diode unit includes: a first submount positioned on the heat sink and spaced apart from adjacent another first submount, a laser diode including an active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer, a bottom side of the laser diode being positioned on the first submount, and a second submount positioned on a top side of the laser diode and spaced apart from adjacent another second submount. The first submount, the laser diode, and the second submount in the laser diode unit are vertically positioned on the heat sink. The laser diodes of the plurality of laser diode units are electrically connected in series.

Abstract: A diode laser arrangement has a diode laser device and at least one cooling device. The at least one cooling device is arranged on the diode laser device. The at least one cooling device is configured to cool the diode laser device. The at least one cooling device has a contact body and at least one heat conducting insert. The contact body contains a first material or consisting of a first material, and the at least one heat conducting insert has a second material, which is different from the first material, or consisting of a second material, which is different from the first material, and the contact body is arranged on the diode laser device. The at least one heat conducting insert is embedded in the contact body.

Abstract: A diode laser arrangement includes a diode laser device, first and second cooling elements and at least one spacing device. The laser device and spacing device are mutually spaced apart between the first and second cooling elements. The laser device and the spacing device are disposed on respective first and second outer surfaces of respective cooling elements. The first and second cooling elements cool the laser device. The laser device has first and second diode main surfaces. The first diode main surface is on the first outer surface in a first front region and/or the second diode main surface is on the second outer surface in a second front region. The spacing device places the first outer surface in the first front region parallel to the first diode main surface, and/or the second outer surface in the second front region parallel to the second diode main surface.

Abstract: A diode laser arrangement for the cooling of and supply of electrical current to diode laser devices, having at least two stacks, each having a diode laser device which is configured to emit a laser beam, an upper cooling device, and a lower cooling device. The diode laser device is arranged on the upper cooling device and on the lower cooling device such that the diode laser device is arranged between the upper cooling device and the lower cooling device. The upper and lower cooling devices are in each case electrically connected to the diode laser device arranged therebetween. The upper cooling device and/or the lower cooling device of a stack are in each case formed as a microchannel cooler. The upper cooling device and/or the lower cooling device of a stack in each case have substantially no electrical insulation with respect to the diode laser device arranged therebetween.

Abstract: Methods, devices, and systems for double-sided cooling of laser diodes are provided. In one aspect, a laser diode assembly includes a first heat sink, a plurality of submounts spaced apart from one another on the first heat sink, a plurality of laser diodes, and a second heat sink on top sides of the plurality of laser diodes. Each laser diode includes a corresponding active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer. A bottom side of each laser diode is positioned on a different corresponding submount of the plurality of submounts. The plurality of laser diode are electrically connected in series.

Abstract: A laser diode bar: includes a semiconductor substrate comprising a first semiconductor layer of a first conductivity type; a first laser diode stack on an upper side of the semiconductor layer; a second laser diode stack on the upper side of the semiconductor layer, the second laser diode stack being electrically connected in series with the first laser diode stack, in which an electrical conductivity of the first semiconductor layer of the first conductivity type is higher than an electrical conductivity of each semiconductor layer of the first and second laser diode stacks; and a first electrode layer on the first laser diode stack, in which the first electrode layer electrically connects the first laser diode stack to a portion of the first semiconductor layer of the first conductivity type that is between the first laser diode stack and the second laser diode stack.

Abstract: A laser diode device includes: a first heat sink including a first mounting layer, in which the first mounting layer includes at least two mounting pads electrically isolated from one another; a second heat sink including a second mounting layer, in which the second mounting layer includes at least two mounting pads electrically isolated from one another; and a laser diode bar between the first heat sink and the second heat sink, in which a bottom electrical contact of the laser diode bar is mounted to the first mounting layer, and a top electrical contact of the laser diode bar is mounted to the second mounting layer.

Abstract: A semiconductor laser diode includes multiple layers stacked along a first direction, in which the multiple layers include: a first multiple of semiconductor layers; an optical waveguide on the first multiple of semiconductor layers, in which the optical waveguide includes a semiconductor active region for generating laser light, and in which the optical waveguide defines a resonant cavity having an optical axis; and a second multiple of semiconductor layers on the optical waveguide region, in which a resistivity profile of at least one layer of the multiple layers varies gradually between a maximum resistivity and a minimum resistivity along a second direction extending orthogonal to the first direction, in which a distance between the maximum resistivity and the minimum resistivity is greater than at least about 2 microns.

Abstract: Methods of passivating at least one facet of a multilayer waveguide structure can include: cleaning, in a first chamber of a multi-chamber ultra-high vacuum (UHV) system, a first facet of the multilayer waveguide structure; transferring the cleaned multilayer waveguide structure from the first chamber to a second chamber of the multi-chamber UHV system; forming, in the second chamber, a first single crystalline passivation layer on the first facet; transferring the multilayer waveguide structure from the second chamber to a third chamber of the multi-chamber UHV system; and forming, in the third chamber, a first dielectric coating on the first single crystalline passivation layer, in which the methods are performed in an UHV environment of the multi-chamber UHV system without removing the multilayer waveguide structure from the UHV environment.

Abstract: A laser diode assembly contains a plurality of laser diode chips packaged closely in a row. Each laser diode chip is bonded on both P-side and N-side to first and second sub-mounts. The sub-mounts are then attached to a cooling carrier, with both bonding surfaces perpendicular to the top surface of the carrier. The direction of laser radiation is parallel to the carrier top surface, and the distance between the top of the active area of the laser diode chip and the carrier is preferably in a range of half a pitch between individual laser sources packaged in a row or preferably in a range of 0.2 mm to 1 mm to allow efficient cooling for high power operation. The sub-mounts may be electrically conductive, or they may be of insulating material at least partially covered with a conducting layer. A laser diode chip is bonded uniquely to a set of sub-mounts or may share a sub-mount with another laser diode chip.

Abstract: A laser module has a unitary base including stepped platforms with an offset relative to an adjacent platform, each stepped platform accommodating a laser source with at least a first and a second plurality of stepped platforms, each platform accommodating a cooling channel inside at a predetermined depth below the top surface of the platform to conduct a flow of cooling fluid provided on an inlet, the cooling channel running under a platform having microchannels, the cooling channels being connected to a fluid inlet with an inlet manifold that provides cooling fluid at the inlet and an outlet manifold to dispose the cooling fluid with waste heat at an outlet, the laser module producing in one embodiment no less than 100 Watt of optical power.

Abstract: Apparatus and methods are provided for a laser module with a base including stepped platforms with an offset relative to an adjacent platform, each stepped platform accommodating a laser source. The module has at least a first plurality of stepped platforms and a second plurality of stepped platforms. Each platform accommodates a laser source that is part of a plurality of laser sources. The plurality of laser sources is arranged in a single plane to have each laser source emit laser radiation in the same direction that is perpendicular to the single plane. Laser radiation generated by the laser sources associated with the first plurality of platforms is combined into a first combined beam of laser radiation and the laser radiation generated by the laser sources associated with the second plurality of platforms is combined into a second combined beam of laser radiation. The first and second combined beam of laser radiation are combined by an optical combiner and coupled into an optical fiber.

Abstract: A device for interleaving a plurality of laser beams (2a, 2b . . . ) that includes laser emitters (3a, 3b, . . . ) arranged along a first direction (X) at a predetermined first distance (P1) from each other to generate laser beams that are aligned parallel and run at a first angle (?) to the first direction (X). Deflecting surfaces (7a, 7b, . . . ) deflect the laser beams so that the deflected laser beams run parallel to one another at a second angle (?). The first angle (?) and the second angle (?) are matched so that the optical path lengths (L1a+L1b, L2) of the laser beams between a first plane (X, Z) running along the first direction (X) in the beam path upstream of the deflecting surfaces and a second plane (B, Z) running along the second direction (B) in the beam path downstream of the deflecting surfaces are identical.

Abstract: A laser system includes a first source and a second source for generating a first laser beam and a second laser beam, respectively, and a mirror arrangement including a first interleaving laser mirror with a high reflecting area configured to reflect the first laser beam and a first high transmitting area configured to transmit the second laser beam.

Abstract: A laser system includes at least two sources configured to provide at least two spatially separated laser beams, and a mount configured to mount the at least two sources along an arc, the arc defining an angular coordinate and a radial coordinate, wherein an axial coordinate is orthogonal to the angular coordinate and the radial coordinate, and the spatially separated laser beams are separated in the axial coordinate. The mount is further configured to mount the at least two sources providing thereby an offset of the laser beams in the axial coordinate such that the laser beams interleave in the axial direction at a center region of the arc.

Abstract: A light source includes a semiconductor laser diode and a narrow spectral and spatial bandwidth reflector in optical communication with respect to the semiconductor diode laser and aligned with the output beam of the diode laser, such that a portion of the light in the output beam is reflected back into the laser.

Abstract: A laser system includes a first source and a second source for generating a first laser beam and a second laser beam, respectively, and a mirror arrangement including a first interleaving laser mirror with a high reflecting area configured to reflect the first laser beam and a first high transmitting area configured to transmit the second laser beam.

Abstract: A laser system includes at least two sources configured to provide at least two spatially separated laser beams, and a mount configured to mount the at least two sources along an arc, the arc defining an angular coordinate and a radial coordinate, wherein an axial coordinate is orthogonal to the angular coordinate and the radial coordinate, and the spatially separated laser beams are separated in the axial coordinate. The mount is further configured to mount the at least two sources providing thereby an offset of the laser beams in the axial coordinate such that the laser beams interleave in the axial direction at a center region of the arc.

Abstract: A semiconductor laser diode having increased efficiency and therefore increased power output. The laser diode includes a body of a semiconductor material having therein a waveguide region which is not intentionally doped so as to have a doping level of no greater than about 5×1016/cm3. Within the waveguide region is means, such as at least one quantum well region, for generating an optical mode of photons. Clad regions of opposite conductivity type are on opposite sides of the waveguide region. The thickness of the waveguide region, a thickness of at least 500 nanometers, and the composition of the waveguide and the clad regions are such so as to provide confinement of the optical mode in the waveguide region to the extent that the optical mode generating does not overlap into the clad regions from the waveguide region more than about 5%.