Abstract: Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer hating a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.

Abstract: An optically stacked, laser diode array module (10) includes a mounting block (100) having a series of stepped, parallel diode mounting surfaces (101) on one face of the block, each diode mounting surface cooperating with a respective pair of reference surfaces (102, 103) of the block to form a respective outside block corner, a series of laser diodes (300) affixed to the block, with facets of the diode aligned with the reference surfaces forming the outside block corner with the mounting surface on which the diode is disposed, such that a corner of each diode is aligned with a respective corner of the block, and a beam reflector (200) secured to the block and having a series of stepped, parallel surfaces, each positioned to intercept and reflect a respective one of the beams (500) from the laser diodes, such that the reflected beams are parallel and stacked. The beams (500) emitted from the laser diodes (300) can be collimated by microlenses (400).

Abstract: A light generating apparatus is operably coupled to an optical fiber (10) with a cladding (5) and a core (4) defining a core diameter. The optical fiber (10) has a numerical aperture, and the product of the numerical aperture of the fiber and one-half the diameter of the core (4) is less than or substantially equal to 400 millimeter-milliradians. The apparatus includes a plurality (7) of laser diode arrays (6, 23, 55), each array comprising at least one light emitting region (1, 24) adapted for emitting light in a individual beam (21, 11). The plurality of laser diode arrays (6, 23, 55) are arranged such that light from the individual beams (21, 11) is combined in a combined beam, and the combined beam has a first far-field, half-angle divergence in a first direction and a first waist dimension in the first direction, and a second far-field, half-angle divergence in a second direction, substantially perpendicular to the first direction, and a second waist dimension in the second direction.

Abstract: A method for improving the efficiency for an optoelectronic device, such as semiconductor lasers, Superluminescence Light Emitting Diodes (SLDs), Gain Chips, optical amplifiers is disclosed, see FIG. 4B. In accordance with the principles of the invention, at least one blocking layer (70) is interposed at the interface between materials composing the device. The at least one blocking layers creates a barrier that prevents the leakage of electrons from a device active region contained in the waveguide region, to a device clad region (66). In one aspect of the invention, a blocking layer (70) is formed at the junction of the semiconductor materials having different types of conductivity. The blocking layer prevents electrons from entering the material of a different polarity. In another aspect of the invention, a low-doped or undoped region (64) is positioned adjacent to the blocking layer (70) to decrease optical losses.

Abstract: An optical device (300) including first and second facets (340, 350); an at least partially bent waveguide (320) formed on a substrate and including a portion perpendicular to the first facet; and a light amplification region (310) coupled to the bent waveguide. The light amplification region includes an expanding tapered portion and a contracting tapered portion which approaches the second facet.

Abstract: A semiconductor laser diode and method are described, wherein the path of the current through the device between the positive and negative conductors is controlled. Lateral spread of the gain current in the active region is prevented by implanting protons in areas of the active layer flanking a desired gain region. The implanted regions become less conductive, and prevent lateral spread of the gain current. The position of the implanted regions can be selected so that the gain current only crosses a portion of the active layer that supports desired lateral modes of the laser light.

Abstract: A distributed feedback ridge waveguide semiconductor laser diode having a waveguide region with a typical thickness of at least 500 nanometers and an effective refractive index difference between the ridge structure and exposed portions of the waveguide region which surround the ridge structure of less than 0.001. This permits the width of the ridge to be expanded beyond 3.5 microns thus translating directly to higher power outputs at 1.55 &mgr;m wavelengths, where carrier diffusion and carrier heating limit current density injected into the active region.

Abstract: A single-transverse-mode laser has a resonance cavity with an output end. A gain medium is disposed within the resonance cavity. The gain medium portion includes an active portion. A mode expander portion is disposed within the resonance cavity and operationally coupled to the gain medium portion and the output end of the resonance cavity. A single-mode waveguide portion is disposed with the resonance cavity between and operationally coupled to the mode expander portion of the output end of the resonance cavity. The single-mode waveguide portion is a passive portion. The gain medium portion, the mode expander portion and the single-mode waveguide portion are integrally formed.

Abstract: A semiconductor laser diode and method are described, wherein the path of the current through the device between the positive and negative conductors is controlled. Lateral spread of the gain current in the active region is prevented by implanting protons in areas of the active layer flanking a desired gain region. The implanted regions become less conductive, and prevent lateral spread of the gain current. The position of the implanted regions can be selected so that the gain current only crosses a portion of the active layer that supports desired lateral modes of the laser light.

Abstract: A distributed feedback ridge waveguide semiconductor laser diode having a waveguide region with a typical thickness of at least 500 nanometers and an effective refractive index difference between the ridge structure and exposed portions of the waveguide region which surround the ridge structure of less than 0.001. This permits the width of the ridge to be expanded beyond 3.5 microns thus translating directly to higher power outputs at 1.55 &mgr;m wavelengths, where carrier diffusion and carrier heating limit current density injected into the active region.

Abstract: A semiconductor laser diode and method are described, wherein the path of the current through the device between the positive and negative conductors is controlled. Lateral spread of the gain current in the active region is prevented by implanting protons in areas of the active layer flanking a desired gain region. The implanted regions become less conductive, and prevent lateral spread of the gain current. The position of the implanted regions can be selected so that the gain current only crosses a portion of the active layer that supports desired lateral modes of the laser light.

Abstract: A mode matching gain element for an optical system is described, that supports a single mode of the optical signal, and that matches the incoming wavefront to a required outgoing wavefront. The incoming wavefront is passed through a phase conjugating structure, and the mode of the gain element is matched to the mode of the input and output optic fibers. The phase conjugating structure includes lenses or mirrors which time-reverse the incoming signal.

Abstract: A semiconductor diode laser has a characteristic output with a single mode vertical far-field divergence. The semiconductor diode laser includes a waveguide with a first refractive index and a quantum well embedded in the center of the waveguide. On one side of the waveguide sits a p-type cladding layer with a second refractive index smaller than the first refractive index. On the other side of the waveguide sits an n-type cladding layer with a third refractive index smaller than the first refractive index and larger than the second refractive index.

Abstract: A mode matching gain element for an optical system is described, that supports a single mode of the optical signal, and that matches the incoming wavefront to a required outgoing wavefront. The incoming wavefront is passed through a phase conjugating structure, and the mode of the gain element is matched to the mode of the input and output optic fibers. The phase conjugating structure includes lenses or mirrors which time-reverse the incoming signal.

Abstract: A mode matching gain element for an optical system is described, that supports a single mode of the optical signal, and that matches the incoming wavefront to a required outgoing wavefront. The incoming wavefront is passed through a phase conjugating structure, and the mode of the gain element is matched to the mode of the input and output optic fibers. The phase conjugating structure includes lenses or mirrors which time-reverse the incoming signal.