Patents Assigned to ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY
  • MICRO-OBJECT EXTRACTION METHOD USING DIFFUSIOPHORESIS, AND MICRO-OBJECT IDENTIFICATION METHOD USING SAME
    Publication number: 20220372541
    Abstract: The present invention relates to a micro-object extraction method using diffusiophoresis enabling collection and extraction of micro-objects by using the concentration difference of a solution including the micro-objects to be extracted, and a micro-object identification method using same, wherein the present invention has the following advantages: desired micro-objects can be easily extracted only with a simple device by using diffusiophoresis; the collection and extraction of micro-objects can be easily controlled by changing the type of solution injected into a micro-channel; and energy usage is efficient by using self-powered energy by diffusiophoresis without separate external power required for extracting micro-objects.
    Type: Application
    Filed: November 5, 2020
    Publication date: November 24, 2022
    Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Taesung KIM, Dogyeong HA
  • Stand-alone buoy with seawater battery
    Patent number: 11505287
    Abstract: The present disclosure relates to a stand-alone buoy with a seawater battery, which includes a main body formed to have a predetermined buoyancy so as to float on seawater and provided with a seawater space therein and an inlet formed to introduce the seawater into the seawater space, a position notification part installed on the main body and configured to notify a user of a position of the main body, a solar cell part installed on the main body and configured to generate electricity using sunlight, and a seawater battery unit installed in the seawater space to be submerged in the seawater introduced into the seawater space and configured to react with the seawater to store the electricity provided from the solar cell part and to provide the stored electricity to the position notification part so as to operate the position notification part.
    Type: Grant
    Filed: April 24, 2020
    Date of Patent: November 22, 2022
    Assignees: UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY), KOREA EAST-WEST POWER CO., LTD., 4 to One Co., Ltd.
    Inventors: Young sik Kim, Young jin Kim, Myung jae Kim, Young gi Kim, Hye Jin Kim
  • Microfluidic device
    Patent number: 11484883
    Abstract: The present invention may provide a microfluidic device including a rotatable body; a first chamber positioned in a direction of an inner wall of the body; a second chamber positioned in a direction of an outer wall of the body from the first chamber; and a backflow prevention unit, and wherein a fluid is transferred from the first chamber to the second chamber, and wherein the backflow prevention unit prevents a backflow of the fluid from the second chamber to the first chamber.
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: November 1, 2022
    Assignees: UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY), CLINOMICS CO.
    Inventors: Yoon Kyoung Cho, Tae-Hyeong Kim, Kyusang Lee, Heechul Park
  • TUNNEL FIELD EFFECT TRANSISTOR AND TERNARY INVERTER COMPRISING SAME
    Publication number: 20220344473
    Abstract: A tunnel field effect transistor includes a constant current formation layer, a source region and a drain region provided on the constant current formation layer, a channel layer provided between the source region and the drain region, a gate electrode provided on the channel layer, and a gate insulating film provided between the gate electrode and the channel layer, wherein the source region and the drain region have different conductivity types, and the constant current formation layer forms a constant current between the drain region and the constant current formation layer.
    Type: Application
    Filed: November 19, 2020
    Publication date: October 27, 2022
    Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Kyung Rok Kim, Ji Won Chang, Jae Won Jeong, Youngeun Choi, Wooseok Kim
  • Raid data storage device and data storage system including the same
    Patent number: 11481274
    Abstract: A data storage system includes a host configured to provide a read request; a plurality of storage devices constituting a redundant array of independent disks (RAID); and a RAID controller configured to a plurality of read commands in response to the read request, the read commands being provided to the plurality of storage devices according to a RAID setting, wherein one data storage device of the plurality of data storage devices includes a nonvolatile memory device; an error handling information storage circuit to store error handling information; and an error detection and correction circuit configured to detect an error in data output from the nonvolatile memory device according to a read command and to selectively correct the error according to the error handling information.
    Type: Grant
    Filed: March 3, 2021
    Date of Patent: October 25, 2022
    Assignees: SK hynix Inc., UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Hyunseung Park, Eunjae Lee, Sam Hyuk Noh
  • Triboelectric generator
    Patent number: 11463023
    Abstract: A triboelectric generator includes first and second electrodes spaced apart from each other, a first charging object on a surface of the first electrode facing the second electrode, a second charging object provided between the first charging object and the second electrode, and a grounding unit configured to intermittently interconnect the second charging object and a charge reservoir due to motion of the second charging object. The first charging object is configured to be positively charged due to contact. The second charging object is configured to be negatively charged due to contact.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: October 4, 2022
    Assignees: Samsung Electronics Co., Ltd., UNIST (Ulsan National Institute of Science and Technology)
    Inventors: Jae-Young Kim, Kyungeun Byun, Minsu Seol, Hyeonjin Shin, Jeongmin Baik, Jinsung Chun, Byeonguk Ye
  • Interconnect structure and electronic apparatus including the same
    Patent number: 11462477
    Abstract: An interconnect structure and an electronic apparatus including the interconnect structure are provided. The interconnect structure includes a conductive layer; a dielectric layer configured to surround at least a part of the conductive layer; and a diffusion barrier layer disposed between the conductive layer and the dielectric layer and configured to limit and/or prevent a conductive material of the conductive layer from diffusing into the dielectric layer, and at least one of the dielectric layer and the diffusion barrier layer includes a boron nitride layer of a low dielectric constant.
    Type: Grant
    Filed: October 28, 2020
    Date of Patent: October 4, 2022
    Assignees: Samsung Electronics Co., Ltd., UNIST (Ulsan National Institute of Science and Technology)
    Inventors: Hyeonjin Shin, Minhyun Lee, Changseok Lee, Hyeonsuk Shin, Seokmo Hong
  • Crystalline silicon-based flexible solar cell and manufacturing method therefor
    Patent number: 11462650
    Abstract: Provided is a solar cell including: a crystalline silicon semiconductor substrate having a specific radius of curvature; a plurality of microwire structures that extend from a first surface of the crystalline silicon semiconductor substrate in a vertical direction and are arranged spaced apart from each other; a first layer positioned on the first surface of the crystalline silicon semiconductor substrate and forming a P-N junction with the crystalline silicon semiconductor substrate; a first electrode part positioned on the first layer and connected to the first layer; a second layer positioned on a second surface of the crystalline silicon semiconductor substrate which is opposite the first surface; and a second electrode part positioned on the second layer and connected with the second layer.
    Type: Grant
    Filed: October 24, 2018
    Date of Patent: October 4, 2022
    Assignee: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Kwan Yong Seo, In Chan Hwang, Han Don Um
  • THIN-FILM STRUCTURE, SEMICONDUCTOR ELEMENT INCLUDING THE THIN-FILM STRUCTURE, AND METHOD OF MANUFACTURING THE THIN-FILM STRUCTURE
    Publication number: 20220302319
    Abstract: Provided is a thin-film structure including a substrate, a nanocrystalline graphene layer provided on the substrate, and a two-dimensional material layer provided on the nanocrystalline graphene layer. The nucleation density of the two-dimensional material layer is 109 ea/cm2 or more according to the nanocrystalline graphene layer, and accordingly, a two-dimensional material layer having an improved uniformity may be formed and a time duration for forming the two-dimensional material layer may be greatly decreased.
    Type: Application
    Filed: October 6, 2021
    Publication date: September 22, 2022
    Applicants: Samsung Electronics Co., Ltd., UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Changseok LEE, Soonyong KWON, Junghwa KIM, Seungwoo SON, Seunguk SONG, Hyeonjin SHIN, Zonghoon LEE, Yeonchoo CHO
  • Electrolyte for lithium secondary battery and lithium secondary battery containing same
    Patent number: 11450887
    Abstract: Disclosed herein are an electrolyte for a lithium secondary battery and a lithium secondary battery including the same. The disclosed lithium secondary battery includes: a cathode; an anode; a separator interposed between the cathode and the anode; and an electrolyte, wherein the electrolyte includes: a lithium salt; and a solvent including a perfluorinated ether-based solvent, fluoroethylene carbonate (FEC), and ethylmethyl carbonate (EMC).
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: September 20, 2022
    Assignees: Hyundai Motor Company, Kia Motors Corporation, UNIST (Ulsan National Institute of Science and Technology)
    Inventors: KyoMin Shin, DongHui Kim, SangJoon Lee, Seung Ho Ahn, SungHoon Lim, Nam-Soon Choi, Sung You Hong, Choonki Kim, Koeun Kim, Yeonkyoung Kim
  • TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND TERNARY INVERTER COMPRISING SAME
    Publication number: 20220285484
    Abstract: A transistor includes: a substrate; a constant current formation layer provided on the substrate; a pair of source/drain patterns provided on the constant current formation layer; a gate electrode provided between the pair of source/drain patterns; a channel pattern extending in a direction between the pair of source/drain patterns; and a gate insulating layer surrounding the channel pattern, wherein the channel pattern penetrates the gate insulating layer and the gate electrode and is electrically connected to the source pattern and the drain pattern, the gate insulating layer separates the channel pattern and the gate electrode from each other, the constant current formation layer generates a constant current between the drain pattern and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.
    Type: Application
    Filed: November 19, 2020
    Publication date: September 8, 2022
    Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Kyung Rok Kim, Ji Won Chang, Jae Won Jeong, Youngeun Choi, Wooseok Kim
  • TRANSISTOR, TERNARY INVERTER COMPRISING SAME, AND TRANSISTOR MANUFACTURING METHOD
    Publication number: 20220285497
    Abstract: Provided is a transistor including: a constant current formation layer; a channel layer provided on the constant current formation layer; a pair of source/drain regions spaced apart from each other, with the channel layer therebetween on the constant current formation layer; a gate electrode provided on the channel layer; and a gate ferroelectric film provided between the gate electrode and the channel layer.
    Type: Application
    Filed: November 19, 2020
    Publication date: September 8, 2022
    Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Kyung Rok Kim, Ji Won Chang, Jae Won Jeong, Youngeun Choi, Wooseok Kim
  • TRANSISTOR, TERNARY INVERTER INCLUDING SAME, AND TRANSISTOR MANUFACTURING METHOD
    Publication number: 20220285507
    Abstract: A transistor includes a substrate; a pair of constant current forming regions provided in the substrate; a pair of source/drain regions respectively provided on the pair of constant current forming regions in the substrate; and a gate structure provided between the pair of source/drain regions, wherein any one of the constant current forming regions immediately adjacent to any one of the pair of source/drain regions serving as a drain forms a constant current between the any one of the pair of source/drain region serving as the drain and the any one of the constant current forming regions.
    Type: Application
    Filed: November 19, 2020
    Publication date: September 8, 2022
    Applicant: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Kyung Rok Kim, Ji Won Chang, Jae Won Jeong, Youngeun Choi, Wooseok Kim
  • METHOD AND APPARATUS WITH NEURAL NETWORK OPERATION USING SPARSIFICATION
    Publication number: 20220284299
    Abstract: A processor-implemented neural network operation method includes: receiving a first activation gradient and a first threshold corresponding to a layer included in a neural network; sparsifying the first activation gradient based on the first threshold; determining a second activation gradient by performing a neural network operation based on the sparsified first activation gradient; determining a second threshold by updating the first threshold based on the second activation gradient; and performing a neural network operation based on the second activation gradient and the second threshold.
    Type: Application
    Filed: August 10, 2021
    Publication date: September 8, 2022
    Applicants: Samsung Electronics Co., Ltd., Ulsan National Institute of Science and Technology
    Inventors: Sehwan LEE, Hyeon Uk SIM, Jongeun LEE
  • NEURAL NETWORK OPERATION APPARATUS AND QUANTIZATION METHOD
    Publication number: 20220284262
    Abstract: A neural network operation apparatus and method implementing quantization is disclosed. The neural network operation method may include receiving a weight of a neural network, a candidate set of quantization points, and a bitwidth for representing the weight, extracting a subset of quantization points from the candidate set of quantization points based on the bitwidth, calculating a quantization loss based on the weight of the neural network and the subset of quantization points, and generating a target subset of quantization points based on the quantization loss.
    Type: Application
    Filed: July 6, 2021
    Publication date: September 8, 2022
    Applicants: SAMSUNG ELECTRONICS CO., LTD., UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Sehwan LEE, Hyeonuk SIM, Jongeun LEE
  • High capacity secondary battery
    Patent number: 11437610
    Abstract: Provided are a high-capacity secondary battery including a cathode including an over-lithiated oxide cathode material or a Ni-rich cathode material; a lithium anode (Li anode); and an electrolyte including a superoxide dismutase mimic catalyst (SODm).
    Type: Grant
    Filed: April 30, 2020
    Date of Patent: September 6, 2022
    Assignee: UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Hyun-Kon Song, Nam-Soon Choi, Chihyun Hwang, Jung-Gu Han
  • Triboelectric generator
    Patent number: 11431265
    Abstract: A triboelectric generator includes a first electrode and a second electrode spaced apart from each other, a first charging part on the first electrode, a second charging part on the second electrode, and a grounding unit. The first charging part and the second charging part may be configured to contact each other through a sliding motion. The grounding unit may be configured to intermittently connect a charge reservoir to the second charging part. The grounding unit may be configured to vary the electric potential of the second charging part so as to amplify current flowing between electrodes of the triboelectric generator.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: August 30, 2022
    Assignees: Samsung Electronics Co., Ltd., UNIST (Ulsan National Institute of Science and Technology)
    Inventors: Kyungeun Byun, Jaeyoung Kim, Minsu Seol, Hyeonjin Shin, Jeongmin Baik, Woojung Yang, Byeonguk Ye, Jaewon Lee, Jinpyo Lee, Kyeongnam Kim
  • METHOD AND APPARATUS FOR DETERMINING BOTTLENECK LINK
    Publication number: 20220272518
    Abstract: A method, performed by a receiver, for controlling congestion, including receiving packets from a transmitter, determining a maximum transmission rate of the received packets; determining a minimum packet delay of the received packets; determining characteristics of a congestion window of next packets to be received from the transmitter based on the maximum transmission rate and the minimum packet delay; and transmitting information on the determined characteristics of the congestion window to the transmitter.
    Type: Application
    Filed: May 11, 2022
    Publication date: August 25, 2022
    Applicant: Ulsan National Institute of Science and Technology
    Inventors: Kyunghan LEE, Shinik PARK
  • Medical cooling device
    Patent number: D968626
    Type: Grant
    Filed: December 3, 2020
    Date of Patent: November 1, 2022
    Assignees: RecensMedical, Inc., UNIST (Ulsan National Institute of Science and Technology)
    Inventors: Gun Ho Kim, Dae Hyun Kim, Ho Young Joo, Eun Ho Kim
  • Medical cooling device
    Patent number: D968627
    Type: Grant
    Filed: December 3, 2020
    Date of Patent: November 1, 2022
    Assignees: RecensMedical, Inc., UNIST (Ulsan National Institute of Science and Technology)
    Inventors: Gun Ho Kim, Kyong Kwan Ro, Boo Seong Park, Chul Ho Lee, Ho Young Joo, Eun Ho Kim