Patents Assigned to ULVAC, Inc.
  • Patent number: 10490390
    Abstract: A substrate processing device includes a housing connected to ground, a cathode stage that supports a substrate, an anode unit, and a gas feeding unit that feeds gas toward the first plate. The cathode stage is applied with voltage for generating plasma. The anode unit includes a first plate including first through holes and a second plate including second through holes that are larger than the first through holes. The second plate is located between the first plate and the cathode stage. The first plate produces a flow of the gas through the first through holes. The gas that has passed through the first through holes flows through the second through holes into an area between the second plate and the cathode stage. A distance between the first plate and the second plate is 10 mm or greater and 50 mm or less.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: November 26, 2019
    Assignee: ULVAC, INC.
    Inventors: Tetsushi Fujinaga, Atsuhito Ihori, Masahiro Matsumoto, Noriaki Tani, Harunori Iwai, Kenji Iwata, Yoshinao Sato
  • Patent number: 10461731
    Abstract: A current fluctuating due to a load fluctuation is limited to protect a semiconductor switch. A protection circuit includes a switch circuit that turns on when a predetermined conduction voltage is applied thereto, and a sub-reactance circuit having a predetermined reactance value is connected in parallel to a main reactance circuit through which a high frequency current generated by a semiconductor switch flows. When the switch circuit is turned on, the main reactance circuit and the sub-reactance circuit are connected in parallel, and a high frequency current flows through this parallel connection circuit. The impedance value of the parallel connection circuit is set to be larger than the impedance value of the main reactance circuit so that the current is limited due to the turning on of the switch circuit, and thus, the semiconductor switch is protected.
    Type: Grant
    Filed: December 10, 2018
    Date of Patent: October 29, 2019
    Assignee: ULVAC, INC.
    Inventors: Kenya Nakashima, Dougo Oohashi, Yoshinori Miyano, Masayuki Kaida
  • Patent number: 10435783
    Abstract: A target assembly is provided in which an abnormal discharging between a projected portion of a backing plate and a side surface of the target is prevented and also in which a bonding material to bond the target and the backing plate can be surely prevented from seeping to the outside and also which is easy in reusing the backing plate. The target assembly according to this invention having: a target made of an insulating material; and a backing plate bonded to one surface of the target via a bonding material, the backing plate having a projected portion which is projected outward beyond an outer peripheral edge of the target, further has an annular insulating plate. The annular insulating plate: encloses a circumference of the target while maintaining a predetermined clearance to a side surface of the target; and covers that surface of the projected portion.
    Type: Grant
    Filed: June 16, 2015
    Date of Patent: October 8, 2019
    Assignee: ULVAC, INC.
    Inventors: Shinya Nakamura, Yoshihiro Ikeda, Yuusuke Miyaguchi, Kazuyoshi Hashimoto, Kengo Tsutsumi, Yoshinori Fujii
  • Patent number: 10429964
    Abstract: A touch panel of the present invention includes a touch panel substrate, a cover substrate provided to overlap the touch panel, and a connection part including a scattering layer laminated from the cover substrate side toward the touch panel substrate side and is provided between the touch panel substrate and the cover substrate in an area other than a display area.
    Type: Grant
    Filed: April 28, 2015
    Date of Patent: October 1, 2019
    Assignee: ULVAC, INC.
    Inventors: Manabu Harada, Hidenori Yanagitsubo, Atsuhito Ihori, Toshihiro Suzuki, Masahiro Matsumoto, Noriaki Tani, Masashi Kubo
  • Publication number: 20190290244
    Abstract: A ultrasound probe according to this invention is provided with: a first dry film resist having a plurality of first apertures formed in an array shape, and respectively supporting the piezoelectric elements in close contact with a rim part of each of the first apertures in a state of partly exposing the function elements; a second dry film resist laminated on the first dry film resist, and also having second apertures respectively enclosing each of the function elements, the second dry film resist being of a thickness equivalent to that of each of the function elements; and a third dry film resist laminated on the second dry film resist, and also having third apertures, and respectively sandwiching each of the piezoelectric elements with the first dry film resist in a state of partly exposing the piezoelectric elements in close contact with a rim part of each of the third apertures.
    Type: Application
    Filed: August 15, 2017
    Publication date: September 26, 2019
    Applicants: Ulvac, Inc., Tohoku University
    Inventors: Taichi SUZUKI, Koh FUWA, Ken MAEHIRA, Yasutomo OHASHI, Katsuhiro FUJITA, Yoichi HAGA, Tadao MATSUNAGA
  • Patent number: 10378102
    Abstract: A magnet unit Mu is disposed inside a target of a cylindrical shape and generates a magnetic field that leaks from a surface of the target such that a line passing through a position in which a vertical component of the magnetic field becomes zero extends along a generating line of the target so as to close like a racetrack shape. The magnet unit is constituted into separate parts of: a first part which respectively forms a corner portion of the racetrack shape at both ends, in the direction of the generating line, of the target; a second part which is respectively disposed on the inside, as seen in the direction of the generating line, of the target, adjacent to the first part; and a third part which is positioned between the second parts.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: August 13, 2019
    Assignee: ULVAC, INC.
    Inventor: Shuuji Saitou
  • Patent number: 10370757
    Abstract: A thin substrate processing device include a substrate processing unit configured to process a thin substrate, and a cooling unit configured to cool the thin substrate when the substrate processing unit is processing the thin substrate.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: August 6, 2019
    Assignee: ULVAC, INC.
    Inventors: Tetsushi Fujinaga, Masahiro Matsumoto, Makoto Arai, Eriko Mase, Harunori Iwai, Koji Takahashi, Atsuhito Ihori
  • Publication number: 20190237290
    Abstract: An ion source having an ion generation container configured to generate ions by reacting ionized gas introduced into the container via a tubular gas introduction pipe with an ion source material emitted in the container. The gas introduction pipe is configured to introduce the ionized gas into an inner space of the gas introduction pipe via a gas supply pipe. In the inner space of the gas introduction pipe, a detachable cooling trap member is disposed and includes a cooling trap portion configured to cool and trap a byproduct produced in the ion generation container. The cooling trap portion is disposed near a supply-side leading end of the gas supply pipe in the inner space of the gas introduction pipe and is not contact with an interior wall face of the gas introduction pipe.
    Type: Application
    Filed: April 11, 2019
    Publication date: August 1, 2019
    Applicant: ULVAC, INC.
    Inventors: Takumi YUZE, Toshihiro TERASAWA, Naruyasu SASAKI
  • Publication number: 20190233224
    Abstract: A vacuum processing apparatus having a small installation area is provided. A lifting plate is arranges inside a vacuum chamber, and a substrate holding device is arranged on the lifting plate to be able to be lifted up and down. An upper side processing device and a lower side processing device are provided in a processing region located beside a lifting region where the lifting plate moves up and down. An upper side moving device and a lower side moving device make the substrate holding device pass through the processing region, and a transfer device transfers the substrate holding device between the upper side moving device or the lower side moving device and the lifting plate. Because vacuum processing can be performed on the upper side and the lower side, the installation area of the vacuum processing apparatus is small.
    Type: Application
    Filed: April 11, 2019
    Publication date: August 1, 2019
    Applicant: ULVAC, INC.
    Inventors: Hirofumi MINAMI, Takayuki SUZUKI, Kazuhiro MUSHA, Hirotoshi NAKAO, Seiichi SATOU
  • Publication number: 20190233938
    Abstract: In a vacuum chamber, there are first and second film formation regions, and a conveyance path having a projected shape on a vertical plane. The conveyance path has a continuous ring shape and passes through the first and second film formation regions. A substrate-holder conveyance mechanism has plural driving portions in contact with driven portions on the substrate holder and is configured to convey the substrate holder along the conveyance path such that the substrate holder remains horizontal. The driving portions convey a preceding substrate holder and a following substrate holder adjacent to each other through the respective film formation regions such that an end portion of an upstream side of a substrate holder at a downstream side in the moving direction and an end portion of a downstream side of a substrate holder at an upstream side in the moving direction are close to each other.
    Type: Application
    Filed: April 10, 2019
    Publication date: August 1, 2019
    Applicant: ULVAC, Inc.
    Inventors: Junsuke MATSUZAKI, Hirohisa Takahashi, Yuu Mizushima
  • Publication number: 20190211935
    Abstract: A gate valve of the invention includes a valve box, a neutral valve body, and a rotation shaft. The neutral valve body includes a neutral valve and a movable valve. The movable valve includes a first movable valve and a second movable valve. The gate valve includes a plurality of first force-applying units, a second force-applying unit, and a third force-applying unit. The third force-applying unit applies a force to the first movable valve. The first force-applying units apply a force to the first movable valve and thereby causing the seal portion to be in close contact with a valve box inner surface located at a periphery of the first opening portion. The second force-applying unit drives the first movable valve and the second movable valve so that thicknesses thereof in the flow passage direction are adjustable.
    Type: Application
    Filed: October 3, 2017
    Publication date: July 11, 2019
    Applicant: ULVAC, Inc.
    Inventors: Shinichi WADA, Hideaki INOUE, Harukuni FURUSE, Takuya WADE, Jirou ENDO, Mikiya SUZUKI, Shinnosuke TOKUHIRA
  • Publication number: 20190206662
    Abstract: In a film forming unit (FU) for a sputtering apparatus according to this invention, a supporting plate is provided with: a target having bonded thereto a backing plate; a magnet unit; and driving device for reciprocating the target along the supporting plate relative to the magnet unit. The backing plate is provided, in a protruded manner, with a supply pipe and a discharge pipe in communication with a coolant passage for the backing plate. A slit hole, which is elongated in the reciprocating direction of the target and through which the supply pipe and the discharge pipe penetrate, is formed in the supporting plate. The supporting plate has on its lower surface a cap body which hermetically encloses those portions of the supply pipe and the discharge pipe, inclusive of the slit hole, which are protruded downward from the slit hole.
    Type: Application
    Filed: June 21, 2017
    Publication date: July 4, 2019
    Applicant: ULVAC, INC.
    Inventor: Shuuji SAITOU
  • Publication number: 20190194798
    Abstract: There is provided a cathode unit for a sputtering apparatus, having a construction in which a target can be replaced without opening a vacuum chamber to the atmosphere. The cathode unit having targets and being adapted to be mounted on a vacuum chamber has: a supporting frame mounted on an external wall of the vacuum chamber; an annular moveable base supported by the supporting frame in a manner to be movable toward or away from the vacuum chamber; a rotary shaft body rotatably supported by the movable base in a manner to be elongated through an inner space of the movable base in parallel with a sputtering surface of the target; provided an axial direction of the rotary shaft body is defined to be an X-axis direction, and a forward or backward direction orthogonal to the X-axis direction of the movable base is defined to be a Z-axis direction.
    Type: Application
    Filed: March 6, 2018
    Publication date: June 27, 2019
    Applicant: ULVAC, INC.
    Inventors: Shinya Nakamura, Yukihito Tashiro
  • Patent number: 10283610
    Abstract: A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma deposition sequence including alternating a metal gas precursor and a nitrogen and/or hydrogen containing plasma. The method of forming the gate stack may further include forming a high-k dielectric layer atop the binary alloy oxide based interlayer.
    Type: Grant
    Filed: February 12, 2018
    Date of Patent: May 7, 2019
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, ULVAC, INC.
    Inventors: Vijay Narayanan, Yohei Ogawa, John Rozen
  • Patent number: 10276827
    Abstract: To provide a device structure that is capable of preventing oxygen, water, and the like from entering the device, and a method of producing the same. A device structure 10 according to an embodiment of the present invention includes a substrate (base) 2, a device layer 3, a first inorganic material layer (convex portion) 41, and a first resin material 51. The substrate 2 has a first surface 2a and a second surface 2c opposite to the first surface 2a. The device layer 3 is arranged on at least the first surface 2a out of the first and second surfaces 2a and 2c. The first inorganic material layer 41 is formed on the first surface 2a. The first resin material 51 is unevenly arranged around the first inorganic material layer 41.
    Type: Grant
    Filed: May 21, 2014
    Date of Patent: April 30, 2019
    Assignee: ULVAC, INC.
    Inventors: Tadashi Oka, Yuko Kato, Takahiro Yajima, Yousuke Matsumoto, Shouta Kanai, Yasuaki Murata
  • Publication number: 20190123733
    Abstract: A current fluctuating due to a load fluctuation is limited to protect a semiconductor switch. A protection circuit includes a switch circuit that turns on when a predetermined conduction voltage is applied thereto, and a sub-reactance circuit having a predetermined reactance value is connected in parallel to a main reactance circuit through which a high frequency current generated by a semiconductor switch flows. When the switch circuit is turned on, the main reactance circuit and the sub-reactance circuit are connected in parallel, and a high frequency current flows through this parallel connection circuit. The impedance value of the parallel connection circuit is set to be larger than the impedance value of the main reactance circuit so that the current is limited due to the turning on of the switch circuit, and thus, the semiconductor switch is protected.
    Type: Application
    Filed: December 10, 2018
    Publication date: April 25, 2019
    Applicant: ULVAC, INC.
    Inventors: Kenya NAKASHIMA, Dougo OOHASHI, Yoshinori MIYANO, Masayuki KAIDA
  • Patent number: 10258947
    Abstract: Provided is a mixing device that is configured to install therein a multi-well plate including a plurality of wells capable of containing matter to be mixed and includes mixing mechanisms each of which mixes the matter to be mixed with a motor and is provided for each of the wells. The mixing mechanisms each includes a first rotator that is connected to the motor and rotates due to activation of the motor, a mixing rod that mixes the matter to be mixed, a second rotator that supports the mixing rod, a magnetic coupling mechanism that magnetically couples the first rotator to the second rotator, and a seal ring that surrounds an opening of the well and is capable of closing the well together with the second rotator.
    Type: Grant
    Filed: November 10, 2017
    Date of Patent: April 16, 2019
    Assignee: ULVAC, INC.
    Inventor: Tomomitsu Ozeki
  • Publication number: 20190103301
    Abstract: There is provided a holding apparatus which is capable of rotatably holding, while cooling to a cryogenic temperature, a to-be-processed object in a vacuum chamber. A holding apparatus for rotatably holding, while cooling, a to-be-processed object in a vacuum chamber Vc, has a stage on which the to-be-processed object is placed, a rotary drive device for rotatably supporting the stage, and a cooling device for cooling the stage. Provided that a stage surface side on which the to-be-processed object is placed is defined as an upside, the rotary drive device has: a tubular rotary shaft body which is mounted on a wall surface of the vacuum chamber, in a penetrating manner, through a first vacuum seal; a connection member for connecting an upper end part of the rotary shaft body and a lower surface of the stage in a manner to define a space below the stage; and a driving motor for driving to rotate the rotary shaft body.
    Type: Application
    Filed: May 26, 2017
    Publication date: April 4, 2019
    Applicants: ULVAC, INC., ULVAC CRYOGENICS INC.
    Inventors: Yukihito Tashiro, Junichi Itoh, Hidenori Fukumoto, Kosuke Hidaka, Mitsuki Terashima
  • Patent number: 10233536
    Abstract: A method of discriminating a state of a sputtering apparatus in which, by sputtering a target, a film is formed on a substrate disposed to lie opposite to the target, the discrimination being made, prior to the film formation on the substrate, as to whether an atmosphere in the vacuum chamber is in a state fit for film formation. As the sputtering apparatus, use is made of one provided inside the vacuum chamber with an isolated space which is isolated from the vacuum chamber by an isolating means (6, 71˜73), the isolated space being for the target and the substrate to lie therein opposite to each other, the sputtering apparatus being so arranged that the isolated space is evacuated accompanied by the evacuation in the vacuum chamber. The vacuum chamber is evacuated to a predetermined set pressure and a gas is introduced therein in this state.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: March 19, 2019
    Assignee: ULVAC, INC.
    Inventors: Shinya Nakamura, Yoshinori Fujii
  • Publication number: 20190078196
    Abstract: In a film-forming method: a to-be-processed substrate and a target are disposed inside a vacuum chamber; a sputtering gas is introduced into the vacuum chamber; and electric power is charged to the target to sputter the target, thereby forming a film on the surface of the to-be-processed-substrate. A leakage magnetic field is caused to locally act on a lower side of a sputtering surface by means of a magnet unit disposed above the target in case that surface of the target which is sputtered is defined as the sputtering surface and the sputtering-surface side is defined as the lower side. The magnet unit is rotated, during film formation by sputtering, such that a region of action of the leakage magnetic field on the sputtering surface varies continuously. A step is included in which a direction of rotation of the magnet unit in a forward direction and a reverse direction is alternately switched.
    Type: Application
    Filed: April 4, 2017
    Publication date: March 14, 2019
    Applicant: ULVAC, INC.
    Inventors: Shinya Nakamura, Mitsunori Henmi, Yoshinori Fujii