Abstract: A plasma processing apparatus according to the invention includes a chamber, an inner electrode, an outer electrode, a plasma generating power source, and a gas introduction part. The plasma generating power source applies alternating-current power to the outer electrode. The outer electrode includes a first electrode, a second electrode, and a third electrode. The plasma generating power source includes a first high-frequency power source, a second high-frequency power source, and a power splitter. The first high-frequency power source applies alternating-current power having a first frequency ?1 to the first electrode and the second electrode. The second high-frequency power source applies alternating-current power having a second frequency ?2 to the third electrode. A relationship of ?1>?2 is satisfied. The power splitter is configured to split the alternating-current power into the first electrode and the second electrode with a predetermined split ratio.

Abstract: A vacuum evaporation method includes a vaporization step in which use is made of an evaporation boat including: a boat main body having a containing part of an evaporation material as an evaporation source; and electrode mounting plate parts respectively extending outward at both ends of the boat main body. A wire-shaped evaporation material is fed from above a bottom plate of the boat main body defining the containing part of the evaporation material, in a manner to come into contact with the bottom plate. Electric current is applied across both the electrode mounting plate parts in order to heat the boat main body, thereby evaporating the evaporation material inside the containing part. The vacuum evaporation method further includes a displacement step of continuously or intermittently displacing, while the wire-shaped evaporation material is being fed, a front end part of the wire-shaped evaporation material relative to the boat main body.

Abstract: A sputtering gas containing a rare gas is introduced into a vacuum chamber 1 of a vacuum atmosphere, an electric power with a negative potential is supplied to a target 2, a positive potential is applied to the reflector plate 4, a plasma is generated, and subsequently the supply of the sputtering gas is stopped, then the target is sputtered while a self-holding discharge under low pressure of plasma is generated. A high-frequency bias power is supplied from a high-frequency power source 61 through an impedance matching device 62 to a stage 5 on which an object to be deposited is mounted. An electron matcher having at least one variable reactor to be electronically controlled is used as an impedance matching device, and a high-frequency bias power is intermittently supplied to the stage at a predetermined frequency.

Abstract: A substrate stage holding a substrate to be treated in a vacuum chamber in which a target made of tungsten is mounted and a high-frequency power source supplying a high-frequency electric power to the substrate stage are provided. When a first plasma atmosphere is generated in the vacuum chamber, and sputtered particles generated by sputtering the target are adhered and accumulated on the substrate so that a tungsten film is deposited, a second plasma atmosphere is generated by supplying the high-frequency electric power to the substrate stage, and plus ions in the first plasma atmosphere are also caused to collide with the substrate. Provided that an area of a substrate holding surface of the substrate stage functioning as one electrode and an inner-surface area of the vacuum chamber functioning as the other electrode of the second plasma atmosphere are defined as an anode area and a cathode area, respectively.

Abstract: In a method in which inside a vacuum chamber, a silicon target and a to-be-deposited object are disposed in a positional relationship to face each other; a sputtering gas, containing therein nitrogen gas, is introduced into the vacuum chamber which is in a vacuum atmosphere; a negative potential is applied to the silicon target such that a silicon nitride film having a tensile stress is deposited in a reactive sputtering on a surface of the to-be-deposited object that is placed in an electrically floated state. The method includes steps: in which the to-be-deposited object is made to a state in which a bias potential is free from being applied thereto; and at least one of a flow ratio of the nitrogen gas to the sputtering gas, and the potential to be applied to the silicon target is controlled such that the surface of the silicon target can be maintained in a transition mode.

Abstract: The present disclosure provides an etching method that includes a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. A processing gas, used in the resist protective film-forming step, includes a gas capable of forming SixOy?z; wherein a is any one of F, Cl, H, and CkHl; and each of x, y, z, k, is a selected non-zero value. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is performed.

Abstract: The present disclosure relates to a process for pre-lithiation and an equipment for implementing the same. The process for pre-lithiation comprising evaporating lithium onto a surface of a negative electrode to form a lithium layer thereon and subjecting the negative electrode to a thermal treatment.

Abstract: A cathode unit includes first and second magnet units that are driven to rotate around an axis on a side opposed to a sputtering surface of a target. The first magnet unit is configured to cause a first leakage magnetic field to act on a space in front of the sputtering surface including a target center inward. The second magnet unit is configured to cause a second leakage magnetic field to act locally in the space in front of the sputtered surface located between the target center and the outer edge of the target and to enable self-holding discharge under low pressure of plasma confined by the second leakage magnetic field.

Abstract: A vacuum processing apparatus including: a plurality of transport chambers arranged in order along a first direction; a plurality of process chambers connected to the transport chambers along a second direction that is perpendicular to the first direction; and a position conversion chamber connected to a first transport chamber among the transport chambers. The transport chambers include a rotational movement stage that rotates about a rotation axis that is perpendicular to the first direction and the second direction, and moves along a plane formed by the first direction and the second direction.

Abstract: A plasma processing device includes an inductively coupled plasma antenna including an input end and an output end, a series circuit including an additional inductor and a variable capacitor connected in series, and a controller that varies a capacitance of the variable capacitor. The input terminal is connected via an antenna matching device to an antenna power supply. The output terminal is connected to the additional inductor. The additional inductor is connected via the variable capacitor to ground.

Abstract: A display device of the present invention includes a display controller executing display control processing of controlling an operation of a predetermined display destination to cause the display destination to display a plurality of N-dimensional graphs. The plurality of N-dimensional graphs include a first graph and a second graph. When a predetermined condition related to acquisition of fixed value change information including auxiliary explanatory variable information designating one or more of auxiliary explanatory variables as objects to be changed in value, and information indicating current variable values is satisfied, the display control processing includes processing of updating the first graph and the second graph to be displayed on the display destination to a changed graph due to changing of values of the auxiliary explanatory variables indicated by the auxiliary explanatory variable information to the current variable values indicated by the fixed value change information.

Abstract: The present invention relates to a low-resistance material film formation method for forming a film on a semiconductor substrate by using physical vapor deposition (PVD), comprising the steps of: a) forming a barrier layer on a SiO2 wafer by using low-temperature magnetron sputtering at a pressure of 1-40 Pa; b) modifying, after formation of the barrier layer, the surface of the barrier layer by applying RF bias in an Ar gas atmosphere without applying DC power; and c) layering a low-resistance material on the barrier layer by using magnetron sputtering, wherein the low-resistance material is at least one selected from the group consisting of tungsten (W), ruthenium (Ru), molybdenum (Mo), cobalt (Co) and rhodium (Rh).

Abstract: A cathode unit for a magnetron sputtering apparatus includes a backing plate joined to an upper side opposed to a sputtering surface of a target set in a posture facing an inside of a vacuum chamber and a magnet unit disposed above the backing plate at an interval, a refrigerant passage through which a refrigerant can flow being formed in the backing plate, in which a surface pressure applying unit is provided, the surface pressure applying unit applying, toward an upper outer surface of the backing plate from above the backing plate, a surface pressure equivalent to pressure applied to an upper inner surface of the backing plate when the refrigerant is circulated.

Abstract: A freeze-drying apparatus includes a freeze-drying chamber in which an object to be dried using water as a solvent is disposed, a collection chamber provided with a cold trap which connects with the freeze-drying chamber to condense and collect water vapor generated from the object to be dried, measuring devices which measure a state quantity of at least one of the object to be dried, an inside of the freeze-drying chamber, and an inside of the collection chamber, and a determining unit which determines a water vapor mass flow rate based on the state quantity measured by each measuring device, in which the determining unit has measurement models performed to observe the water vapor mass flow rate, and while each measuring device measures the state quantity, a set based on which the water vapor mass flow rate is determined with superiority at the time of the determination is selected.

Abstract: The present disclosure provides an etching method that includes a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. A processing gas, used in the resist protective film-forming step, includes a gas capable of forming SixOy?z; wherein a is any one of F, Cl, H, and CkHl; and each of x, y, z, k, is a selected non-zero value. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is performed.

Abstract: A vacuum evaporation method includes a vaporization step in which use is made of an evaporation boat including: a boat main body having a containing part of an evaporation material as an evaporation source; and electrode mounting plate parts respectively extending outward at both ends of the boat main body. A wire-shaped evaporation material is fed from above a bottom plate of the boat main body defining the containing part of the evaporation material, in a manner to come into contact with the bottom plate. Electric current is applied across both the electrode mounting plate parts in order to heat the boat main body, thereby evaporating the evaporation material inside the containing part. The vacuum evaporation method further includes a displacement step of continuously or intermittently displacing, while the wire-shaped evaporation material is being fed, a front end part of the wire-shaped evaporation material relative to the boat main body.

Abstract: An evaporation source for use in a vacuum evaporation apparatus is provided with: an evaporation boat inclusive of a boat main body with a containing part for an evaporation material, and electrode mounting plate parts respectively extending outward from both ends of the boat main body; and material feeding means for feeding a wire-shaped evaporation material into the containing part from an upper side thereof. By charging electric current across both electrode mounting plate parts, the boat main body is heated to evaporate the evaporation material inside the containing part. A supporting means is disposed in contact, from underneath, with such a bottom plate part of the boat main body as defines the containing part. The supporting means has supporting plates disposed in a state in which upper ends of the supporting plates are in contact, from underneath, with the bottom plate part of the boat main body.

Abstract: Provided is an evaporation source for use in a vacuum evaporation apparatus, the evaporation source restricting a local overheating and planning prolonged lifetime. The evaporation source includes: a boat main body having a containing part for the evaporation material; rising plate parts each rising upward from both ends as seen in one direction of the boat main body; and electrode mounting plate parts each extending outward from the respective upper ends of the rising plate parts. The boat main body is heated by applying electric power across both the electrode mounting plate parts, thereby causing the evaporation material inside the containing part to be evaporated. At this time, the rising plate parts are provided with dividing passages for the applied electric current.

Abstract: A freeze-drying apparatus includes a freeze-drying chamber in which an object to be dried using water as a solvent is disposed, a collection chamber provided with a cold trap which connects with the freeze-drying chamber to condense and collect water vapor generated from the object to be dried, measuring devices which measure a state quantity of at least one of the object to be dried, an inside of the freeze-drying chamber, and an inside of the collection chamber, and a determining unit which determines a water vapor mass flow rate based on the state quantity measured by each measuring device, in which the determining unit has measurement models performed to observe the water vapor mass flow rate, and while each measuring device measures the state quantity, a set based on which the water vapor mass flow rate is determined with superiority at the time of the determination is selected.

Abstract: An ion gun of the invention includes: an anode; a magnetic pole that has an inner surface facing the anode, a slit provided at a position corresponding to the anode, and an inner inclined surface that extends from an end of the inner surface to the slit and that forms a part of the slit; and a cover that covers at least the inner surface and the inner inclined surface, is formed of an electroconductive and non-magnetic material, and is detachable from the magnetic pole.