Abstract: There are provided a film forming equipment component having a structure in which an deposited film d formed on the component can be separated from the component for a time period shorter than the prior art to reduce damage due to a cleaning fluid S, and a method of cleaning such a component. A metal film layer 2 electrochemically less noble than the matrix metal material 1 of the aforementioned component is formed on the surface of the matrix metal material 1 through thermal spraying, vapor depositing, sputtering, laminating or other process. Alternatively, a second metal film layer 3 electrochemically more noble than the aforementioned matrix metal material 1 is formed on the surface of the metal film layer 2 through said thermal spraying or other process. Thus, a local cell is formed between the metal film layer 2 and the matrix metal material 1 or the second metal film layer 3.

Abstract: A technique that enables the formation of a low resistivity barrier film at low temperatures, in which a catalyst is placed inside a vacuum chamber and heated, a raw material gas and a reactive gas (such as H2, NH3 or SiH4) are introduced alternately into the vacuum chamber, and a reaction is effected between the raw material gas adsorbed to the surface of an object, and radicals generated by decomposition of the reactive gas on contact with the catalyst, thereby depositing a thin film on the object. Furthermore, a technique for removal of impurities (such as oxides, fluorides, carbides or nitrides), in which the catalyst is placed in a vacuum atmosphere and heated, and a treatment gas having a hydrogen atom in its chemical structure is brought into contact with the catalyst, thereby generating radicals. The surface of an object to be treated is exposed to these radicals.

Abstract: A halftone mask increasing the versatility of an etching stopper layer. The half tone mask (10) is provided with a transparent portion (TA) using a glass substrate (S), a first semi-transparent portion (HA) including a first semi-transparent layer (11) formed on the glass substrate, and a light shield portion (PA) including a first semi-transparent portion, a light shield layer (13) superimposed above the first semi-transparent layer, and an etching stopper layer (12) formed between the first semi-transparent layer and the light shield layer. The first semi-transparent layer and the light shield layer are each formed from Cr or at least one selected from the group consisting of an oxide, nitride, carbide, oxynitride, oxycarbide, carbonitride, and oxycarbonitride of Cr. The etching stopper layer includes a first element of at least one selected from the group consisting of Fe, Ni, and Co and a second element of at least one selected from the group consisting of Al, Si, Ti, Nb, Ta, Hf, and Zr.

Abstract: A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber in which an object to be film formed is disposed; a sputtering target is sputtered in a vacuum ambience containing oxygen; and a first metallic film is formed on a surface of the object to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film is formed on a surface of the first metallic film by sputtering the sputtering target in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films.

Abstract: A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided. A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin film in which a plurality of pores are arranged around a skeleton mainly made of a Si—O bond, on a surface of a semiconductor substrate on which a desired element region is formed; a step of applying patterning on a surface of the dielectric thin film through a mask; and a step of bringing a gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules into contact with the patterned surface of the dielectric thin film.

Abstract: A gate valve includes: a valve box; a support body disposed inside a hollow portion; a valve plate including a fixed valving section, a movable valving section sliding in a direction in which a flow passage is extended, a first peripheral region; and a second peripheral region; a first biasing section disposed at the first peripheral region, allowing the movable valving section to move toward a first opening portion, allowing the movable valving section to come into contact with an inner surface, pressing the movable valving section onto the inner surface, and closing the flow passage; and a second biasing section disposed at the second peripheral region, allowing the movable valving section to move toward a second opening portion, and releasing the flow passage by separating the movable valving section from the inner surface.

Abstract: A technology for placing spacers free from the occurrence of streaks is provided. Random numbers are generated by a computer, and made in one-by-one association with discharge positions of an object for discharging every generation, and stored in a memory unit of the computer. Coefficient values are determined for the respective discharge positions based on the stored random numbers, and individual voltage values to be required for the respective discharge positions are calculated through the multiplication of voltages set for respective nozzle holes N1 to Nn by the coefficient values. When the respective voltages corresponding to the discharge positions are applied to piezoelectric elements inside a discharge head and a discharge liquid containing the spacers are discharged through the plural nozzles N1 to Nn provided in the discharge head, the spacers are placed on the object for discharging by numbers according to the random numbers.

Abstract: A highly durable touch panel is provided. A touch panel according to the present invention includes a deformable flexible panel, and a transparent electrode film containing In2O3 as a primary component and containing Ti is exposed to a surface of a lower electrode film of a display device. Since such a transparent electrode film has a high abrasion resistance as compared to a conventional one (such as, an ITO thin film), the transparent electrode film is neither clouded nor cracked even if the lower electrode film is repeatedly pressed. Therefore, the touch panel according to the present invention is highly durable.

Abstract: A method for manufacturing a piezoelectric element, in which a ferroelectric film is processed in an appropriate shape by plasma etching, is provided. A metal mask made of a metal thin film which is hard to be etched by oxygen gas is placed on an object to be processed formed by laminating a lower electrode layer and a ferroelectric film on a substrate in this order. An etching gas containing a mixture gas of the oxygen gas and a reactive gas including fluorine in a chemical structure is turned into plasma and is brought into contact with the metal mask and the object to be processed. An AC voltage is applied to an electrode disposed beneath the object to be processed so that ions in the plasma are caused to enter the object to be processed to perform anisotropic etching on the ferroelectric film.

Abstract: A self-cleaning catalytic chemical vapor deposition apparatus which suppresses the corrosion-induced degradation of a catalytic body by a cleaning gas without heating a catalytic body to not less than 2000° C. and permits practical cleaning rates and good cleaning at low cost. Conductors supply a constant current to a catalytic body within a reaction chamber from a heating power supply. Terminals of the heating power supply are electrically insulated from the reaction chamber. A cleaning gas containing halogen elements is introduced into the evacuated reaction chamber. The catalytic body is heated by the heating power supply. An active species generated by this heating reacts with an adhering film adhered to the interior of the reaction chamber, which is removed. During this removal, a DC bias voltage with appropriate polarity and appropriate value is applied from a constant-voltage power supply to the conductor of the heating power supply.

Abstract: [Object] In the control of electron beam focusing of a pierce-type electron gun, any influences from the space charge effect and space charge neutralizing action within the electron gun are eliminated to attain complete control of an electron beam. [Solving Means] Feedback control of the pressure within the electron gun is performed by directly measuring temperature at an internal of the pierce-type electron gun. It is desirable that locations where the direct measurement of the temperature at the internal of the electron gun is performed are an anode (39) and a flow register (43). Further, the direct measurement can be performed at any one of a ring, an aperture and an exhaust pipe provided at an outlet or an inlet of any one of a cathode chamber (31), an intermediate chamber, and a scanning chamber (33).

Abstract: A gas head that, at low cost, is capable of suppressing any deactivation of radical gas and capable of uniformly introducing a raw material gas on a substrate; and a relevant thin-film manufacturing apparatus are provided. A gas head (13) according to the present invention includes a reactive gas introduction port (30A) for introduction of a reactive gas, a plurality of raw material gas introduction ports (30B) for introduction of a raw material gas, and a dispersion board (32) for dispersing the raw material gas, wherein the plurality of the raw material gas introduction ports (30B) are disposed so as to surround the periphery of the reactive gas introduction port (30A). The reactive gas having been introduced in the reactive gas introduction port (30A) is mixed with the raw material gas having been introduced through a plurality of raw material gas introduction ports (30B) and dispersed by means of the dispersion board (32).

Abstract: A method for manufacturing a solar cell, includes: forming, on a silicon substrate whose conductivity type is p-type or n-type, a silicon layer including a dopant whose conductivity type is different from that of the silicon substrate; and diffusing the dopant included in the silicon layer into the silicon substrate by heat-treating the silicon layer.

Abstract: [Object] To provide a method of manufacturing a sputtering target and a sputtering target that are capable of achieving refinement and uniformity of crystal grains. [Solving Means] A method of manufacturing a sputtering target according to an embodiment of the present invention includes forging an ingot formed of metal by applying a stress in a first axis direction (z-axis direction) and a plane direction (xy-plane direction) orthogonal to the first axis direction. The ingot is additionally forged by applying a stress in a second axis direction (axial directions c11, c12, c21, c22) obliquely intersecting with a direction parallel to the first axis direction. The ingot is heat-treated at a temperature equal to or higher than a recrystallization temperature thereof. In such a manner, since slip deformation can be caused not only in the first axis direction and the plane direction orthogonal thereto but also in the second axis direction, the high density and uniformity of an internal stress can be achieved.

Abstract: The present invention provides a dry pump including: a center cylinder which includes: a plurality of pump chambers containing an upper stage pump chamber that communicates with an intake port and a lower stage pump chamber that communicates with a discharge port; a plurality of rotors contained in the plurality of the pump chambers; a rotating shaft that is a rotation axis of the rotor; and a side face on which a communication hole is formed, the side face being intersected by the rotating shaft extending in the axial direction, and being provided adjacent to the lower stage pump chamber, and a side cover which covers the side face with the communication hole to form a space.

Abstract: A dry etching method includes a first step and a second step. The first step includes generating a first plasma from a gas mixture, which includes an oxidation gas and a fluorine containing gas, and performing anisotropic etching with the first plasma on a silicon layer to form a recess in the silicon layer. The second step includes alternately repeating an organic film forming process whereby an organic film is deposited on the inner surface of the recess with a second plasma, and an etching process whereby the recess covered with the organic film is anisotropically etched with the first plasma. When an etching stopper layer is exposed from a part of the bottom surface of the recess formed in the first step, the first step is switched to the second step.

Abstract: Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufacturing a semiconductor device. Specifically, an Ru film is formed on a substrate having a recessed portion by a CVD method using a raw material containing an organic ruthenium complex represented by the general formula and a reducing gas (step S12). Then, a Cu film is formed on the Ru film by a CVD method using a raw material containing an organic copper complex represented by the general formula and a reducing gas, thereby forming a copper wiring containing the Ru film and the Cu film in the recessed portion (step S14).

Abstract: A switch valve having a long span of life is provided. The switch valve 70 of the present invention has a low-melting-point metal 76 having a surface on which a blocking member contacts, with the low-melting-point metal 76 melted, thereby a closed state appears in which an inner space of the switch valve 70 is split up into an inner space and an outer space of the blocking member 72. When the inner space and the outer space of the blocking member 72 are connected in the inner space of the switch valve 70, outside devices are blocked from each other in the closed state. The outside devices are connected to each other in an opened state in which the lower end of the blocking member 72 is spaced away from the low-melting-point metal 76.

Abstract: To provide a compact and low-power-consumption artificial respirator and an operation method therefore including a controller which alternately switches between a first state for feeding inspiratory air stored in the reservoir tank to a patient and a second state for releasing expired air of the patient. A pressurizing pump has a discharge function for reversing a reduction of pressure within the reservoir tank, which is caused due to the inspiration, within an expiration period of time.

Abstract: A technique is provided which prevents an increase in the resistivity of a conductive wiring film. A conductive layer containing Ca in a content rate of 0.3 atom % or more is provided on the surfaces of each of conductive wiring films which are to be exposed to a gas containing a Si atom in a chemical structure at a high temperature. When a gate insulating layer or a protection film containing Si is formed on the surface of the conductive layer, the Si atoms do not diffuse into the conductive layer and a resistance value does not increase, even if the conductive layer is exposed to the raw material gas containing Si in a chemical structure . Further, a CuCaO layer can be formed as an adhesive layer for preventing Si diffusion from a glass substrate or a silicon semiconductor.