Abstract: An electrode circuit for plasma CVD includes: an alternating-current source; a matching circuit that is connected to the alternating-current source; and parallel plate electrodes that are constituted of a pair of an anode electrode and a cathode electrode, in which the anode electrode and the cathode electrode are arranged such that electrode surfaces of the anode electrode and the cathode electrode face each other. The matching circuit, the parallel plate electrodes, and plasma generated by the parallel plate electrodes form a balanced circuit.

Abstract: A touch panel having high durability is provided. Either one or both of a display device and a flexible panel have island-shaped protective bodies formed on surfaces of electrode layers (upper electrode layer, lower electrode layer), and a transparent conductive film is exposed between the protective bodies. Since the protective bodies protrude highly from the surface of the transparent conductive film, when the flexible panel is pressed and the upper electrode and the lower electrode layer are brought into contact, a load to be applied to the transparent conductive film is reduced by the protective bodies, so that the transparent conductive film is not broken.

Abstract: A tray for transporting a wafer is herein provided, which can control the temperature of the wafer upon the processing thereof, and which can easily fix the wafer without reducing the effective area on the surface of the wafer and without requiring much time for the adhesion of the wafer thereto and without requiring any post-treatment after the wafer is detached from or attached to the tray.

Abstract: The challenge for the present invention is to provide a film-forming method and for forming a passivation film which can sufficiently inhibit the loss of carriers due to their recombination; and a method for manufacturing a solar cell element with the use of the method or the device. The film-forming device comprises a mounting portion 22 for mounting a film-forming object, a high frequency power source 25, and a shower plate 23 which is provided to face the film-forming object S mounted on the mounting portion 22, which introduces a film-forming gas, and to which the high frequency power source is connected and a high frequency voltage is applied. A low frequency power source 26 for applying a low frequency voltage is connected to the shower plate or the mounting portion mounting a substrate. The film-forming method is performed using the film-forming device, and the film-forming method is carried out in forming a passivation film.

Abstract: According to the present disclosure, a printer apparatus may include a chuck configured to support a substrate thereon, a rail spaced apart from the chuck, a printhead carriage frame coupled to the rail, and a printhead carriage coupled to the printhead carriage frame. The printhead carriage may include a printhead and an actuation mechanism. The actuation assembly may be coupled to the printhead carriage and may be selectively engagable with the printhead for selective displacement of the printhead relative to the printhead carriage.

Abstract: A secondary cooling apparatus capable of gradually cooling cast thin pieces and a cast apparatus that uses it are provided. A comb tooth-shaped device is arranged inside a vessel of the secondary cooling apparatus; the cast thin pieces are piled on the comb tooth-shaped device; and crushed small pieces are placed thereon. After the cast thin pieces and the crushed small pieces are gradually cooled, the cast thin pieces are crushed by a pressing device. The crushed small pieces are rapidly cooled by being in contact with a surface of a bottom wall and side faces of cooling teeth. Nd-rich phases or R-rich phases can be annealed by the gradual cooling, and after the crushed small pieces are rapidly cooled to its oxidation temperature or below, the crushed small pieces can be taken out to the air atmosphere.

Abstract: A manufacturing method of a solar cell including a transparent conductive film formed on a transparent substrate includes the steps of: preparing a target, the target including ZnO and a material including a substance including an Al or a Ga, the ZnO being a primary component of the target; in a first atmosphere including a process gas, applying a sputter electric voltage to the target and forming a first layer included in the transparent conductive film; in a second atmosphere including a greater amount of an oxygen gas compared to the first atmosphere, applying a sputter electric voltage to the target and forming a second layer on the first layer, the second layer being included in the transparent conductive film; and forming an irregular shape by performing an etching process on the transparent conductive film.

Abstract: A method for producing a Ta sputtering target including the following steps: (a) a step of forging a Ta ingot, comprising subjecting the Ta ingot to a forging pattern over at least 3 times, wherein each forging pattern is “a cold forging step comprising stamp-forging and upset-forging operations alternatively repeated over at least 3 times; (b) an in-process vacuum heat-treating step carried out between every successive two forging patterns to thus prepare a Ta billet; (c) a step of rolling the Ta billet to obtain a rolled plate; and (d) a step of vacuum heat-treating the rolled plate to obtain a Ta sputtering target. A sputtering target produced by the above method.

Abstract: A rough and fine movement device capable of moving a mobile body with high accuracy, and a liquid supply device incorporating such a device. First and second mobile bodies are movable along guide members with a connection member connecting the mobile bodies in a relatively movable manner. A first drive mechanism roughly moves the first mobile body by a first stroke. A second drive mechanism between the first and the second mobile bodies, finely moves the second mobile body relative to the first mobile body by a second stroke. The second drive mechanism on one of the first and second mobile bodies and includes an actuator having a contactor with a first contact surface. The other of the bodies includes a second contact surface which contacts the first contact surface. At least one of the first contact surface or the second contact surface is spherical.

Abstract: The present invention provides a magnetic neutral line discharge plasma processing system that can apply a plurality of linear magnetic neutral line discharge plasmas simultaneously so as to uniformly process all the surface area of a large rectangular substrate for homogeneousness. The management field generating means of the magnetic neutral line discharge plasma processing system has at least two linear current rods arranged outside the vacuum chamber in parallel with the surface to be processed of the object of processing in the vacuum chamber so as to form at least a linear magnetic neutral line in the vacuum chamber between adjacently located linear current rods.

Abstract: An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiO2 or Si3N4 stuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiF4 in a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiF4 to decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.

Abstract: A method for manufacturing a semiconductor device that improves the reliability of a metal cap layer and productivity. The method includes an insulation layer step of superimposing an insulation layer (11) on a semiconductor substrate (2) including an element region (2b), a recess step of forming a recess (12) in the insulation layer (11), a metal layer step of embedding a metal layer (13) in the recess (12), a planarization step of planarizing a surface of the insulation layer (11) and a surface of the metal layer (13) to be substantially flush with each other, and a metal cap layer step of forming a metal cap layer (16) containing at least zirconium element and nitrogen element on the surface of the insulation layer (11) and the surface of the metal layer (13) after the planarization step.

Abstract: Between an exhaust chamber and a lubrication chamber, a second seal that seals between a cylinder that partitions the exhaust chamber and a first shaft and a first seal that seals between a side cover that partitions the lubrication chamber and the first shaft are provided. A gas introduction space to which a seal gas is supplied is provided between the second seal 2 and the first seal. The second seal and the first seal each have a base part and a pair of ring-like lips extending from the base part toward the first shaft. The pair of lips extends such that the distance therebetween is gradually increased from the base part toward the first shaft, and the tips of the pair of lips can be brought into elastic contact with the first shaft.

Abstract: A solar cell manufacturing method according to the present invention is a solar cell manufacturing method that forms a transparent conductive film of ZnO as an electric power extracting electrode on a light incident side, the method comprises at least in a following order: a process A forming the transparent conductive film on a substrate by applying a sputtering voltage to sputter a target made of a film formation material for the transparent conductive film; a process B forming a texture on a surface of the transparent conductive film; a process C cleaning the surface of the transparent conductive film on which the texture has been formed using an UV/ozone; and a process D forming an electric power generation layer on the transparent conductive film.

Abstract: An ion implanting apparatus is provided, which can accurately measure a quantity of atoms that are implanted. The ion implanting apparatus according to the present invention has an object to be measured, and the object to be measured is arranged in an irradiating range in which ions are irradiated. When atoms are implanted into an object to be processed by irradiating ions of a processing gas and neutralized particles thereof, the object to be measured is heated through the irradiation with the processing gas ions and the neutralized particles. A control unit determines a quantity of the atoms that are implanted into the object to be processed from the temperature of the object to be measured.

Abstract: A method of forming a primary coat, which consists of a V- or Ti-containing film, formed on the surface of a subject on which holes or the like have been formed, according to the CVD technique, while using, for instance, a tetravalent amide-type vanadium-containing organometal compound as a raw gas and using, for instance, tertiary butyl hydrazine as a reducing gas, and a copper-containing film is then formed on the primary coat, according to the CVD technique, to thus fill the holes or the like with the copper-containing film and to thus form copper distributing wire, which is excellent in the hole-filling properties and excellent in the adhesion to a primary coat, this process can be applied to the field of copper distributing wires used in the semiconductor industries.

Abstract: A processing gas is introduced to remove an oxide film on the surface of a silicon substrate 5. F radicals are allowed to act on the surface of the silicon substrate to etch a silicon layer. Then, NH3 gas, N2 gas and NF3 gas are introduced, allowing NHxFy to act on the oxidized surface of the silicon substrate 5, thereby forming (NH4)2SiF6. The resulting (NH4)2SiF6 is sublimated to remove by-products (SiOF, SiOH) on the surface of the silicon substrate 5.

Abstract: The following abstract replace prior abstract in the application. It is an object to provide a simple and practical method capable of producing a magnetic storage medium of a type such as a bit-patterned type, a magnetic storage medium of the above-mentioned type and an information storage device which may be produced by such a simple and practical method, and in a method of producing a magnetic disk, there are performed: a film-forming process of forming, on a glass substrate 61, a magnetic film 62 so that the Curie temperature becomes 600 K or lower; and an ion injection process (C) of injecting ions locally into an area other than a predetermined protected area on the magnetic film 62.

Abstract: Even when a gate valve for a vacuum apparatus used in a vapor deposition apparatus is in an open position, reliability of keeping a vapor deposition chamber vacuum can be improved by protecting an inner wall surface of a valve casing and a sealing member of a valve body against a vapor of a vapor deposition material. A gate valve (1) for a vacuum apparatus (50) is used as a gate valve for an electron gun (52). When the valve is in a closed position, as with the related art technique, a valve body (3) detaches an electron gun (52) part from a vapor deposition chamber (51).

Abstract: A touch panel having high durability is provided. Either one or both of a display device and a flexible panel have island-shaped protective bodies formed on surfaces of electrode layers (upper electrode layer, lower electrode layer), and a transparent conductive film is exposed between the protective bodies. Since the protective bodies protrude highly from the surface of the transparent conductive film, when the flexible panel is pressed and the upper electrode and the lower electrode layer are brought into contact, a load to be applied to the transparent conductive film is reduced by the protective bodies, so that the transparent conductive film is not broken.