Abstract: A method for manufacturing a semiconductor device includes forming a semiconductor layer including an oxide semiconductor as a main component and forming an insulator layer on a surface of the semiconductor layer. The insulator layer includes silicon oside as a main component and has a hydrogen atom concentration that is less than or equal to 1×1021 atoms/cm3.

Abstract: A sputtering apparatus (SM) has a vacuum chamber in which is disposed a target. A plasma atmosphere is formed inside the vacuum chamber to thereby sputter the target. The sputtered particles splashed from the target are caused to get adhered to, and deposited on, a surface of a substrate disposed in the vacuum chamber, thereby forming a predetermined thin film thereon. At such a predetermined position inside the vacuum chamber as is subject to adhesion of the sputtered particles splashed from the target, there is disposed an adhesion body whose at least the surface of adhesion of the sputtered particles is made of a material equal in kind to that of the target. The adhesion body has connected thereto a bias power supply for applying a bias voltage having negative potential at the time of forming the plasma atmosphere.

Abstract: The invention provides an apparatus that causes film formation particles to adhere to a surface of a substrate moving in a hermetically-sealable chamber and thereby forms a thin film thereon and includes: a plasma generator; a substrate transfer unit; a film-formation source supplier; and a film-formation region limiter. The plasma generator includes a magnet located at the other surface of the substrate and a gas supplier that supplies a film forming gas to near the surface of the substrate. The film-formation region limiter includes a shield that is located close to the surface of the substrate and has an opening. The ratio of a diameter of the opening of the shield to a diameter of the plasma generated by the plasma generator in a direction along the surface of the substrate is in a range of less than or equal to 110/100.

Abstract: A laterally switching cell structure including a metal-insulator-metal stack includes an active metal oxide layer including one or more sub-stoichiometric regions. The metal oxide layer includes one or more metal-oxides deposited conformally using a mixed precursor atomic layer deposition process. A graded oxygen profile in the metal oxide layer(s) of the stack including a mirrored impurity density may be formed wherein the sub-stoichiometric region(s) include a relatively high density of impurities obtained as reaction by-products. Arrays of cell structures can be formed with no requirement for a thick active electrode, allowing for more space for a metal fill and optional selector, thereby reducing access resistance.

Abstract: Inside a main chamber there are provided: first partition walls partitioning a deposition chamber having a deposition unit; and second partition walls disposed in continuation to the first partition walls so as to cover outer cylinder parts of a can-roller while leaving a first gap that curves at a curvature coinciding with an outer peripheral surface of the can-roller. The deposition chamber and an adjacent chamber are in communication with each other with the first gap such that a conductance between the deposition chamber and the adjacent chamber is determined by the second partition walls. At least one of the second partition walls is arranged to be rotatable, with a rotary shaft of the can-roller, between a shielding position which shields such a part of the can-roller as is lying opposite to the deposition unit, and a withdrawn position which is circumferentially away from the deposition unit.

Abstract: The invention provides an evaporator that is heated by an electron beam in vacuum, evaporates or sublimates a vapor-deposition material, and forms a lithium-containing compound coating on a surface of a substrate in transfer by codeposition. The evaporator includes a hearth liner that includes a cooler; and a plurality of liners that are accommodated in the hearth liner, each of which has the vapor-deposition material thereinside.

Abstract: A cryopump includes a cryopanel, a main body, and a baffle plate. The cryopanel is connected to a refrigerator. The main body accommodates the cryopanel. The baffle plate is located in a gas inlet of the main body. The baffle plate includes a first portion and a second portion. The first portion includes a center of the baffle plate and a first hole extending through the baffle plate. The second portion includes an edge of the baffle plate and a second hole extending through the baffle plate. The second portion has a greater conductance than the first portion.

Abstract: A maintenance apparatus for a cryocooler includes a glovebox, a container, and a lid. The glovebox is configured to be joined to a cooling subject coupled to a cylinder of the cryocooler. The glovebox defines a first glovebox chamber that accommodates a cryocooler part excluding the cylinder. The cryocooler part includes a displacer of the cryocooler dismounted from the cylinder. The container is disposed in the first glovebox chamber and configured to accommodate the cryocooler part. The lid is disposed in the first glovebox chamber. The lid is configured to disconnect a cylinder chamber of the cylinder from the first glovebox chamber when the cooling subject is joined to the glovebox.

Abstract: The vacuum processing apparatus for performing predetermined vacuum processing on a processing surface of a to-be-processed substrate is made up of: a vacuum chamber having disposed therein a to-be-processed substrate and having formed, on an upper wall of the vacuum chamber, a mounting opening facing the processing surface where a direction in which the processing surface looks is defined as an upper side; a processing unit for performing therein vacuum processing; and a communication pipe having a predetermined length and being interposed between the vacuum chamber and the processing unit such that predetermined processing is performed, through the communication pipe, on the to-be-processed substrate inside the vacuum chamber. The processing unit has an engaging means to which is coupled a swing arm for swinging about a rotary shaft extending perpendicularly to a vertical direction for selectively engaging the vacuum chamber and the communication pipe or the processing unit and the communication pipe.

Abstract: [Solving Means] An oxide semiconductor thin film according to an embodiment of the present invention includes: an oxide semiconductor that mainly contains In, Sn, and Ge. An atom ratio of Ge/(In+Sn+Ge) is 0.07 or more and 0.40 or less. As a result, it is possible to achieve transistor characteristics with a mobility of 10 cm2/Vs or more.

Abstract: A method of manufacturing an OTS device of the invention is a method of manufacturing OTS device including a first conductor, an OTS portion made of chalcogenide, and a second conductor which are layered in order and disposed on an insulating substrate. The manufacturing method includes: a step D of forming a resist so as to coat part of an upper surface of the second conductor; a step E of dry etching a region which is not coated with the resist; and a step F of ashing the resist. In the step E, the second conductor, all of the OTS portion, and an upper portion of the first conductor are removed by an etching treatment once in a depth direction of the region.

Abstract: The invention provides a film formation apparatus that includes: a transfer unit that transfers a substrate; a film formation unit that forms an electrolyte film on a film formation region of the substrate transferred by the transfer unit; and an extraneous-material removal unit that comes into contact with the electrolyte film of the substrate transferred by the transfer unit after film formation of the film formation unit and thereby removes extraneous materials contained in the film formation region.

Abstract: Provided is a sputtering apparatus which is capable of suppressing a local temperature rise at an outer peripheral part of a to-be-processed substrate. The sputtering apparatus SM has: a vacuum chamber [[1]] in which a target [[2]] and the to-be-processed substrate Sw are disposed face-to-face with each other; a shield plate [[5]] for enclosing a film forming space [[1a]] between the target and the to-be-processed substrate; and a cooling unit for cooling the shield plate. The shield plate [[5]] has a first shield plate part [[5a]] which is disposed around the to-be-processed substrate and which has a first opening [[51]] equivalent in contour to the to-be-processed substrate. The cooling unit includes a first coolant passage [[55]] which is disposed in the first shield plate part and which has a passage portion [[55a]] extending all the way to the first shield plate part positioned around the first opening.

Abstract: A vapor deposition unit of this invention is provided with: a container box for containing therein a vapor deposition material; and a heating means for heating the vapor deposition material inside the container box, and which has formed in one plane of the container box a discharge opening for discharging a sublimated or evaporated vapor deposition material as a result of heating. The vapor deposition unit is further provided, inside a storing chamber, with a moving means for moving the vapor deposition unit. Provided that a direction looking toward the opening in the storing chamber is defined as an upper side, the moving means moves the vapor deposition unit disposed in the storing chamber in an up-and-down direction in a posture coinciding with a phase of the discharge opening.

Abstract: In a vacuum processing apparatus for performing a predetermined vacuum processing on a surface of a sheet-like base material while keeping the base material to travel inside the vacuum chamber, the can-roller of this invention disposed to lie opposite to a vacuum processing unit has an axial body; an inner cylindrical body to be inserted onto an outside of the axial body; an outer cylindrical body enclosing an outer cylindrical surface of the inner cylindrical body with a gap therebetween, and cover bodies for respectively closing axial both ends of the inner cylindrical body. Each of the cover bodies has a plurality of flow passages. A cross-section of each of the fluid passages overlaps a cross-section of the cover body. A cross-sectional area of the gap between the inner cylindrical body and the outer cylindrical body is set to a size that can obtain a predetermined flow velocity.

Abstract: A freeze-drying method includes depressurizing containers filled with a liquid including a raw material and a medium with a freeze-drying device to freeze the liquid from a liquid surface. The depressurizing includes executing an exhaust mitigation process that performs the depressurizing at an exhaust capability that is less than a rated exhaust capability of the freeze-drying device, and using a partial pressure value of the medium to determine when the exhaust mitigation process ends. The executing an exhaust mitigation process includes maintaining an exhaust speed of a gas capture pump configured to discharge gas from a freeze-drying chamber accommodating the containers, and decreasing an exhaust speed of a positive-displacement pump configured to discharge gas from a space accommodating the gas capture pump.

Abstract: [Object] To make it difficult for components other than films to be contained in a lamination interface. [Solving Means] In a deposition apparatus, a vacuum chamber includes a partition wall which defines a plasma formation space and includes quartz. An deposition preventive plate is provided between at least a part of the partition wall and the plasma formation space and includes at least one of yttria, silicon nitride, or silicon carbide. On a support stage, a substrate including a trench or hole including a bottom portion and a side wall is capable of being disposed. A plasma generation source generates first plasma of deposition gas including silicon introduced into the plasma formation space to thereby form a semiconductor film including silicon on the bottom portion and the side wall. The plasma generation source generates second plasma of etching gas including halogen introduced into the plasma formation space to thereby selectively remove the semiconductor film formed on the side wall.

Abstract: Provided is a vacuum processing apparatus which is capable of performing baking processing of a deposition preventive plate without impairing the function of being capable of cooling the deposition preventive plate disposed inside a vacuum chamber. The vacuum processing apparatus has a vacuum chamber for performing a predetermined vacuum processing on a to-be-processed substrate that is set in position inside the vacuum chamber. A deposition preventive plate is disposed inside the vacuum chamber. Further disposed are: a metallic-made block body vertically disposed on an inner surface of the lower wall of the vacuum chamber so as to lie opposite to a part of the deposition preventive plate with a clearance thereto; a cooling means for cooling the block body; and a heating means disposed between the part of the deposition preventive plate and the block body to heat the deposition preventive plate by heat radiation.

Abstract: A deep ultraviolet LED with a design wavelength ?, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies ?/2n1Deff (where ? is the design wav

Abstract: The sputtering apparatus has a vacuum chamber in which is disposed a target. While rotating a circular substrate at a predetermined rotational speed with a center of the substrate, the target is sputtered to form the thin film on the surface. The sputtering apparatus has: a stage for rotatably holding the substrate in a state in which the center of the substrate is offset by a predetermined distance to radially one side from the center of the target; and a shielding plate disposed between the target and the substrate on the stage. The shielding plate has an opening part allowing to pass sputtered particles scattered out of the target as a result of sputtering the target. The opening part has a contour in which, with a central region of the substrate serving as an origin, the area of the opening part gradually increases from the origin toward radially outward.