Abstract: The vacuum processing apparatus of this invention has: a vacuum chamber capable of forming vacuum atmosphere; and a stage for supporting inside the vacuum chamber a to-be-processed substrate. The stage has: a base to be selectively cooled; a chuck plate disposed on the base so as to electrostatically absorb the to-be-processed substrate; and a hot plate interposed between the base and the chuck plate, whereby the to-be-processed substrate electrostatically absorbed to the surface of the chuck plate is controlled to a predetermined temperature above the room temperature. The vacuum processing apparatus further has: a thermal insulation plate, disposed between the base and the hot plate, for restraining thermal transmission from the hot plate to the base. A high-emissivity layer having a higher emissivity than an upper surface of the base is disposed between the base and the thermal insulation plate.

Abstract: There is provided a Cu alloy target on a surface of a substrate made at least one of glass and resin produced by an adhering film alloy containing Cu and additive metals, the adhering film formed by sputtering. The additive metals include two or more of metals selected from the group consisting of Mg of 0.5 at % or more and 6 at % or less, Al of 1 at % or more and 15 at % or less, and Si of 0.5 at % or more and 10 at % or less. The adhering film has strong adhesive force that resists removal.

Abstract: A sputtering apparatus SM has: a vacuum chamber in which a substrate and a target are disposed to lie opposite to each other; a plasma generating means generating a plasma inside the vacuum chamber; and a magnet unit disposed above the target. The magnet unit has a plurality of magnets with different polalities on a substrate side. A leakage magnetic field in which a line passing through a position where a vertical component of the magnetic field becomes zero is closed in an endless manner, is caused to locally act on such a space below the target as is positioned between the center of the target and a periphery thereof. The magnet unit is divided, on an imaginary line extending from the center of the target toward a periphery thereof, into a plurality of segments each having a plurality of magnets.

Abstract: A sputtering apparatus is provided with: a vacuum chamber having a target manufactured by sintering raw material powder; a magnet unit having a plurality of magnets disposed on the same surface above the target which is mounted on the vacuum chamber in a non-rotatable manner, in order to cause leakage magnetic field penetrating the target to function in uneven distribution on the sputtering surface; a rotary shaft which is disposed on the center line passing through the center of the target and is coupled to the magnet unit; and a drive motor for driving the rotary shaft to rotate, thereby rotating the magnet unit such that a function region of the leakage magnetic field on the sputtering surface revolves about an imaginary circle with the center of the target serving as the center.

Abstract: Provided is a vacuum processing apparatus which is capable of performing baking processing of a deposition preventive plate without impairing the function of being capable of cooling the deposition preventive plate disposed inside a vacuum chamber. The vacuum processing apparatus has a vacuum chamber for performing a predetermined vacuum processing on a to-be-processed substrate that is set in position inside the vacuum chamber. A deposition preventive plate is disposed inside the vacuum chamber. Further disposed are: a metallic-made block body vertically disposed on an inner surface of the lower wall of the vacuum chamber so as to lie opposite to a part of the deposition preventive plate with a clearance thereto; a cooling means for cooling the block body; and a heating means disposed between the part of the deposition preventive plate and the block body to heat the deposition preventive plate by heat radiation.

Abstract: A thin-film transistor according to an embodiment of the present invention includes: a gate electrode; an active layer formed of an oxide containing indium, zinc, and titanium; a gate insulating film formed between the gate electrode and the active layer; and a source electrode and a drain electrode that are electrically connected to the active layer. Atomic proportions of elements relative to the total quantity of indium, zinc, and titanium that constitute the oxide may be not less than 24 at. % and not more than 80 at. % for indium, not less than 16 at. % and not more than 70 at. % for zinc, and not less than 0.1 at. % and not more than 20 at. % for titanium.

Abstract: Inside a main chamber there are provided: first partition walls partitioning a deposition chamber having a deposition unit; and second partition walls disposed in continuation to the first partition walls so as to cover outer cylinder parts of a can-roller while leaving a first gap that curves at a curvature coinciding with an outer peripheral surface of the can-roller. The deposition chamber and an adjacent chamber are in communication with each other with the first gap such that a conductance between the deposition chamber and the adjacent chamber is determined by the second partition walls. At least one of the second partition walls is arranged to be rotatable, with a rotary shaft of the can-roller, between a shielding position which shields such a part of the can-roller as is lying opposite to the deposition unit, and a withdrawn position which is circumferentially away from the deposition unit.

Abstract: The sputtering apparatus has a vacuum chamber in which is disposed a target. While rotating a circular substrate at a predetermined rotational speed with a center of the substrate, the target is sputtered to form the thin film on the surface. The sputtering apparatus has: a stage for rotatably holding the substrate in a state in which the center of the substrate is offset by a predetermined distance to radially one side from the center of the target; and a shielding plate disposed between the target and the substrate on the stage. The shielding plate has an opening part allowing to pass sputtered particles scattered out of the target as a result of sputtering the target. The opening part has a contour in which, with a central region of the substrate serving as an origin, the area of the opening part gradually increases from the origin toward radially outward.

Abstract: A gate valve has a communication block with a communication passage and a valve unit having a valve plate movable between a partitioning position and an open position. A lower end part of the valve plate comes into pressurized contact with a surface of a band-shaped base material transferred through the communication passage between a first chamber and a second chamber. Due to a force of this pressurized contact, a back surface of the base material is seated on a seating surface provided in the communication passage. A groove is formed in the lower end of the valve plate, and a roller-shaped sealing member with a central shaft is inserted into the groove. Opening parts are formed in both axial side-wall surfaces of the groove such that the end parts of the central shaft of the sealing member are inserted into the opening parts and pivotally supported with a clearance.

Abstract: The present invention provides a technique to enable sufficient space saving in a transit-type vacuum processing device. The vacuum processing device 1 of the present invention has: a vacuum chamber 2 where a single vacuum ambience is formed; first and second processing regions 4 and 5 that are provided in the vacuum chamber 2 and have a processing source that performs processing on a planar process surface of a substrate 10; and a conveyance drive member 33 that forms a conveyance path for conveying the substrate 10 so as to pass through the first and second processing regions 4 and 5.

Abstract: The reactive ion etching apparatus of this invention has a stage provided with an electrostatic chuck having a pair of electrodes. At the time of etching a to-be-processed substrate, by applying DC voltage to the pair of electrodes, the to-be-processed substrate is electrostatically absorbed to the electrostatic chuck. In this reactive ion etching apparatus, a radio-frequency power source connected to the stage, through a first output line, applies bias potential to the to-be-processed substrate. The radio-frequency power source is also arranged to be connected through a second output line to the pair of electrodes so as to apply radio-frequency potential in a manner to be superposed on the DC voltage. The first capacitor and the second capacitor are respectively interposed in the first output line and the second output line. A capacitance ratio of the first capacitor to the second capacitor is set to a range of 2.5 to 25.

Abstract: A vacuum pump includes a pump main body and a sound muffling device. The pump main body includes a housing including an intake port and an exhaust port, and a rotor that is rotatably arranged inside the housing and transports gas from the intake port to the exhaust port. The sound muffling device includes a casing, a first passage portion, and a second passage portion. The casing includes an opening end portion that is airtightly connected to an outer wall surface of the housing, a bottom wall portion that faces the opening end portion, and a peripheral wall portion, the casing defining an expansion chamber by the outer wall surface of the housing and respective inner wall surfaces of the bottom wall portion and the peripheral wall portion.

Abstract: A method of forming an internal stress control film on one surface of an object to be processed by a sputtering method, includes selecting a pressure of a process gas at the time of forming the internal stress control film from a pressure region higher than a threshold value of 5 (Pa) so that stress of the object to be processed when a bias is applied to the object to be processed becomes larger stress on a tensile side and the internal stress control film has higher density, as compared with stress in a case in which a bias is not applied thereto.

Abstract: An engineered particle for an energy storage device, the engineered particle includes an active material particle, capable of storing alkali ions, comprising an outer surface, a conductive coating disposed on the outer surface of the active material particle, the conductive coating comprising a MxAlySizOw film; and at least one carbon particle disposed within the conductive coating. For the MxAlySizOw film, M is an alkali selected from the group consisting of Na and Li, and 1?x?4, 0?y?1, 1?z?2, and 3?w?6.

Abstract: [SUMMARY] A sputtering method includes disposing a carbon target (Tg) and a film-forming object (Wf) inside a vacuum chamber (1); evacuating the vacuum chamber to a predetermined pressure by a vacuum pump (Vp); subsequently introducing a sputtering gas into the vacuum chamber; charging the target with electric power to form a plasma atmosphere such that the target gets sputtered by the ions of the sputtering gas in the plasma, whereby carbon particles splashed from the target are caused to be adhered to, and deposited on, a surface of the film-forming object, thereby forming a carbon film. The target is cooled by heat exchanging with a first refrigerant at least during the time when the target receives radiant heat from the plasma; wherein the temperature of the first refrigerant is controlled to keep the temperature of the first refrigerant below 263K.

Abstract: Provided is a deep ultraviolet LED with a design wavelength ?, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength ?. The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.

Abstract: A gate valve has a communication block with a communication passage and a valve unit having a valve plate movable between a partitioning position and an open position. A lower end part of the valve plate comes into pressurized contact with a surface of a band-shaped base material transferred through the communication passage between a first chamber and a second chamber. Due to a force of this pressurized contact, a back surface of the base material is seated on a seating surface provided in the communication passage. A groove is formed in the lower end of the valve plate, and a roller-shaped sealing member with a central shaft is inserted into the groove. Opening parts are formed in both axial side-wall surfaces of the groove such that the end parts of the central shaft of the sealing member are inserted into the opening parts and pivotally supported with a clearance.