Abstract: An organic thin film deposition device that is compact and high in processing capability is provided. Inside a vacuum chamber, first and second substrate arrangement devices that can be in a horizontal posture and a standing posture are provided; and when in the standing posture, substrates held by the respective substrate arrangement devices and first and second organic vapor discharging devices face each other. When one of the substrate arrangement devices is in the horizontal posture, masks and the substrates are lifted up by alignment pins and transfer pins and are replaced with a substrate not yet film formed, for position adjustment. With one organic thin film deposition device, two substrates can be processed at the same time.

Abstract: The back pressure of an ink tank is controlled. A porous body is arranged inside the ink tank, the lower end of the porous body contacts an ink, and the ink ascends inside the porous body due to a capillary force. The upper end of the porous body is not immersed in the ink, and a maximum ascending force acts upon the ink stored in the ink tank. Therefore, the ink does not leak from a discharge head located lower than the ink tank. Further, because the ink is accumulated under the porous body and the amount of the ink contacting the porous body is small, components of the ink are less susceptible to deterioration.

Abstract: In An Al composite material collapsible in the presence of moisture, the external surface of small pieces or powder constructed from a single or a plurality of crystalline grains of Al or an Al alloy is covered with a film of a low melting point metal or alloy selected from the group consisting of In, Sn, combinations of In and Sn, and alloys thereof. The content of the foregoing low melting point metal or alloy ranges from 0.1 to 20% by mass on the basis of the total mass of the composite material. A material obtained by adding a low melting point metal in an amount specified above to, for instance, Al and then fusing and melting the resulting mixture is quenched and solidified within a non-oxidizing atmosphere to thus form an Al composite material. An Al film, an Al spray-coated film and Al powder can be prepared from the foregoing Al composite material. A component member for a film-forming chamber is also provided, which is provided with a water-collapsible Al film on the surface thereof.

Abstract: A chalcogenide film of the present invention is deposited, by sputtering, in a contact hole formed in an insulating layer on a substrate. The chalcogenide film comprises an underlayer film formed at least on a bottom portion of the contact hole and a crystal layer made of a chalcogen compound, and formed onto the underlayer film and in the contact hole.

Abstract: A display device which can be driven by a thin-film transistor and has a high brightness is provided. A low-voltage-driven inorganic luminescent layer and a control transistor are formed on a substrate. The voltage which is applied to the inorganic luminescent layer is controlled by the control transistor. The inorganic luminescent layer has such strength against heat and any damage such that the inorganic luminescent layer can be formed by sputtering method. A top-emission type display device and a bottom-emission type display device can be formed on the same substrate and the luminescent light can be emitted from the same position.

Abstract: Exfoliation of an etching stopper is prevented. A color filter of the present invention includes an inorganic protection film (etching stopper) composed mainly of SnO2. Since the inorganic protection film as such not only has a high specific resistance but also has a linear expansion coefficient close to the linear expansion coefficient of a transparent electrode, the inorganic protection film is not exfoliated from the transparent electrode or the resin layer even if an object to be processed is heated. Since the inorganic protection film and the transparent electrode can be formed in the same film forming chamber, the time required to produce the color filter can be shortened as compared to in the conventional technique.

Abstract: A dry pump includes: a plurality of cylinders; a pump chamber formed in each of the cylinders; a division wall separating pump chambers adjacent to each other; a plurality of rotors contained inside pump chambers; a rotating shaft that serves as an axis of rotation of the rotor; and a cooling medium path which is formed inside the division wall and through which a cooling medium passes.

Abstract: It is an object to provide a simple method capable of producing a magnetic storage medium, a magnetic storage medium and an information storage device which may be produced by a simple production method with a high recording density, and a magnetic disk is produced by a production method having: a film-forming process of forming, on a substrate 61, a magnetic film made of a Co—Cr—Pt alloy and having a thickness of less than 10 nm; and an ion injection process of forming, by reducing saturation magnetization by locally injecting ions into a point other than plural points that become magnetic dots on each of which information is magnetically recorded, a between-dot separator having saturation magnetization smaller than saturation magnetization of the magnetic dots, between the magnetic dots.

Abstract: [Object] To provide a freeze-drying apparatus and a freeze-drying method, which are capable of increasing a drying efficiency of frozen particles. [Solving Means] The freeze-drying apparatus 100 includes a freezing chamber 10 into which a raw material fluid F is injected. During the injection of the raw material fluid F, after the injection of the raw material fluid F, or for a time period covering the start to the termination of the injection of the raw material fluid F, a shelf 16 is vibrated in a horizontal direction due to an actuation of vibration generators 31. With this, the frozen particles deposited on the shelf 16 are evenly diffused on the shelf 16 in such a manner that a deposition thickness thereof becomes smaller or a single layer thereof is formed. With this, a freezing efficiency and the drying efficiency of individual particles are promoted.

Abstract: In An Al composite material collapsible in the presence of moisture, the external surface of small pieces or powder constructed from a single or a plurality of crystalline grains of Al or an Al alloy is covered with a film of a low melting point metal or alloy selected from the group consisting of In, Sn, combinations of In and Sn, and alloys thereof. The content of the foregoing low melting point metal or alloy ranges from 0.1 to 20% by mass on the basis of the total mass of the composite material. A material obtained by adding a low melting point metal in an amount specified above to, for instance, Al and then fusing and melting the resulting mixture is quenched and solidified within a non-oxidizing atmosphere to thus form an Al composite material. An Al film, an Al spray-coated film and Al powder can be prepared from the foregoing Al composite material. A component member for a film-forming chamber is also provided, which is provided with a water-collapsible Al film on the surface thereof.

Abstract: A film forming method for an antireflection film that has a first indium oxide-based thin film and a second indium oxide-based thin film that is laminated on the first indium oxide-based thin film, including a first film forming step that forms the first indium oxide-based thin film by performing sputtering using a first indium oxide-based target in a first reactive gas that contains one, two, or three types selected from a group consisting of oxygen gas, hydrogen gas, and water vapor; and a second film forming step that forms on the first indium oxide-based thin film the second indium oxide-based thin film by performing sputtering using a second indium oxide-based target in a second reactive gas that contains one, two, or three types selected from a group consisting of oxygen gas, hydrogen gas, and water vapor, and that has a different composition from the first reactive gas.

Abstract: This sputtering target for forming a thin film transistor wiring film has a composition including 0.1 at % to 5 at % of Mg, 0.1 at % to 10 at % of Ca, and the remainder being Cu and inevitable impurities. Either one or both of Mn and Al may further be included at a total amount in a range of 0.1 at % to 10 at %. 0.001 at % to 0.1 at % of P may further be included.

Abstract: [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer. [Solving Means] A sputtering apparatus according to an embodiment of the present invention is a sputtering apparatus for forming a thin-film on a surface to be processed of a substrate 10, and includes a vacuum chamber 61, a supporting portion 93, a target 80, and a magnet 83. The magnet 83 generates plasma forming a region to be sputtered 80a, and moves the region to be sputtered 80abetween a first position in which the region to be sputtered 80a is not opposed to the surface to be processed and a second position in which the region to be sputtered is opposed to the surface to be processed. With this, it is possible to weaken incident energy of sputtered particles incident on the surface to be processed of the substrate 10 from the region to be sputtered 80a, and to protect the base layer.

Abstract: In the present invention, an organic EL device, which includes first and second display electrodes and at least one organic functional layer sandwiched between the respective display electrodes and composed of an organic compound, a high-molecular compound film covering the organic EL device and a surface of a substrate in the periphery of the organic EL device, an inorganic barrier film covering the high-molecular compound film, the edge of the high-molecular compound film, and a surface of the substrate in the periphery of the high-molecular compound film are formed on the substrate. In this case, a aliphatic polyurea film is used as the high-molecular compound film.

Abstract: A dual-robot transfer system including: a transfer module for transferring work-pieces into and out of a process module; a physical interface between the transfer module and a supply-and-accept system; a first robot located substantially in the transfer module for transferring work-pieces to and from the process module and a buffer station located in the transfer module, the first robot including a first top arm and a first bottom arm, the first top arm and first bottom arm substantially having a first range of motion; and a second robot located substantially in the transfer module for transferring work-pieces to and from the process module, the buffer station, and the physical interface, the second robot including a second top arm and a second bottom arm, the second top arm and second bottom arm substantially having a second range of motion which overlaps in part with the first range of motion.

Abstract: A thin-film solar cell manufacturing apparatus includes a film forming chamber that is evacuated to a reduced pressure and forms a film on a substrate using a CVD method; a loading-ejecting chamber that is connected to the film forming chamber via a first opening-closing part and that is switchable between atmospheric pressure and reduced pressure; a first carrier that holds a pre-processed substrate; and a second carrier that holds a post-processed substrate, wherein the loading-ejecting chamber simultaneously stores the first carrier and the second carrier.

Abstract: There is provided an evaporating material of thin plate shape which can be manufactured at a reduced cost and at high productivity, the evaporating material being adapted for use in enhancing the coercive force of neodymium-iron-boron sintered magnet by heat treatment while evaporating Dy in vacuum or in reduced-pressure inert gas atmosphere. The evaporating material of this invention has a core member la made of a fire-resistant metal having a multiplicity of through holes, and is made by melting a rare-earth metal or an alloy thereof so as to get adhered to, and solidified on, the core member. In this case, the above-mentioned adhesion is performed by dipping the core member into a molten bath of the rare-earth metal or an alloy thereof, and pulling it out of the molten bath.

Abstract: A manufacturing method for a solar cell including an upper electrode extracting an electrode at an incident light side, the upper electrode including a transparent conductive film, a basic structural element of the transparent conductive film being any one of an indium (In), a zinc (Zn), and tin (Sn), the manufacturing method including: a step A forming a texture on a front surface of a transparent substrate using a wet etching method, the transparent conductive film being formed on the transparent substrate, wherein in the step A, when the texture is formed, a metal thin film is formed on the transparent substrate, and an anisotropic etching is performed with the metal thin film being a mask.

Abstract: A magnetic recording medium is manufactured without the disappearance of the surface of a substrate that comprises a magnetic recording layer by ion milling and without being influenced by the atmosphere. A magnetic recording medium manufacturing device manufactures a magnetic recording medium by implanting an ion beam into a substrate that comprises a magnetic recording layer and removing by ashing the surface of the substrate that comprises the magnetic recording layer after the ion beam is implanted. The magnetic recording medium manufacturing device comprising an ion implantation chamber for implanting the ion beam into the substrate that comprises the magnetic recording layer coated with a resist film or a metal mask, and an ashing chamber for removing, by ashing, with plasma, the resist film or the metal mask of the substrate that comprises the magnetic recording layer coated with the resist film or the metal mask. The ion implantation chamber and the ashing chamber are coupled in a vacuum state.

Abstract: [Object] To provide a plasma processing method and a plasma processing apparatus having high coverage property and excellent in-plane uniformity. [Solving Means] When sputtered particles that are beat out from a target by plasma are deposited on a surface of a substrate, those sputtered particles are decomposed by the plasma to thus generate active species, and then deposited on the surface of the substrate. Accordingly, a deposition mode similar to plasma CVD is obtained, and sputtering deposition with high coverage property and excellent in-plane uniformity is enabled. Particularly, since a high-frequency electric field and a ring-shaped magnetic neutral line are used for a plasma source, it is possible to efficiently generate plasma that has extremely high density in a region in which a magnetic field is zero. That plasma realizes plasma processing with high in-plane uniformity by arbitrarily adjusting a formation position and a size of the magnetic neutral line.