Abstract: An electronic device includes: a shifter configured to perform a shift operation based on a codebook supporting a plurality of quantization levels preset for data bits of a data set; and a decoder configured to control the shifter by setting quantization scales of the data bits differently for preset groups, wherein the shifter is configured to quantize and output the data bits by control of the decoder.

Abstract: Disclosed is a process of manufacturing cell spheroids using a bioink. More particularly, provided is a method of manufacturing a cell spheroid, the method including extruding a first bioink including an alginate; extruding a second bioink including cells into the extruded first bioink; adding a calcium chloride (CaCl2) solution to the alginate included in the first bioink; and dissolving the second bioink, present in the first bioink, in a cell culture medium to form a cell spheroid from the cells.

Abstract: A method of manufacturing a composite material through a wet compression molding (WCM) process is disclosed. The internal pressure of a mold is controlled so that productivity may be improved due to process automation through application of a resin using a robot. Quality of the composite material may be improved due to minimization of deformation of a foam core through control of the internal pressure of the mold.

Abstract: A transistor device includes a substrate, a fin structure extending on the substrate in a direction parallel to a top surface of the substrate, a source region and a drain region provided at an upper portion of the fin structure, a constant current generating layer provided at a lower portion of the fin structure, a gate insulating film provided on both side surfaces and a top surface of the upper portion of the fin structure, and a gate electrode provided on the gate insulating film, wherein the gate electrode is provided on the fin structure and between the source region and the drain region, the constant current generating layer generates a constant current between the drain region and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.

Abstract: The present invention relates to a three-dimensional structure electrode, a method for manufacturing same, and an electrochemical element including the electrode. The present invention is characterized by comprising: (a) an upper conductive layer and a lower conductive layer which have a structure constituting an assembly within which a conductive material and a porous nonwoven fabric including a plurality of polymeric fibers are three-dimensionally connected in an irregular and continuous manner, thereby forming a mutually connected porous structure; and (b) an active material layer forming the same assembly structure as the conductive layers and forming a three-dimensionally filled structure in which electrode active material particles are uniformly filled inside the mutually connected porous structure formed in the assembly structure, wherein the active material layer is formed between the upper conductive layer and the lower conductive layer.

Abstract: The inventive concept relates to a three-dimensional crosslinker composition and a method of manufacturing an electronic device using the same. According to the inventive concept, the three-dimensional crosslinker composition may be represented by Formula 1 below.

Abstract: Provided is a display device including a display panel, an optical sensor, a timing controller, a scan driver, a data driver, and an image controller. The timing controller controls an image refresh rate of the display panel based on a refresh rate control signal. Thus, the display device provides improved visibility.

Abstract: Disclosed is a ferromagnetic element-substituted room-temperature multiferroic material having ferromagnetism and ferroelectricity at room temperature, wherein the ferromagnetic element-substituted room-temperature multiferroic material includes a compound of chemical formula 1: <chemical formula 1> (Pb1-xMx)Fe1/2Nb1/2O3. In chemical formula 1, M represents a ferromagnetic element, and x represents a number greater than 0 and smaller than 1.

Abstract: The present disclosure relates to a quantum dot-polymer composite, an immunodetection conjugate including the quantum dot-polymer composite, and a diagnostic kit using the same, the composite including a quantum-bead of a 3D self-assembly structure including one or more quantum dots that has a core-shell structure, a surface-modifying ligand arranged on the surface of the quantum dots, and one or more polymer ligands, wherein the one or more quantum dots are dispersed within the quantum-bead, the core including indium phosphide (InP), and the shell that has a thickness of from 3 nm to 9 nm.

Abstract: Provided are a negative electrode active material including a three-dimensional composite. The three-dimensional composite includes secondary particles containing a silicon carbide-based (SiCx, 0<x?1) nanosheet having a bent portion and amorphous carbon. Also provided are a method of producing the same, and a negative electrode and a lithium secondary battery including the negative electrode active material.

Abstract: This application relates to an independent active electromagnetic interference filter module. In one aspect, the filter module includes a first element group including a noise sensing unit provided to sense electromagnetic noise, and a second element group including a compensating unit provided to generate a compensation signal for the electromagnetic noise. The first group and the second group may be respectively mounted on different substrates. According to some embodiments, the filter module can reduce a volume of each element constituting an electromagnetic interference filter module, implement a single modularization of a compact structure. The filter module can also improve electromagnetic interference noise reduction performance and a manufacturing method thereof.

Abstract: Disclosed herein is a nano membrane. The nano membrane includes an insulating layer having a thickness corresponding to a diameter of each of metal nanowires and configured to contain the metal nanowires therein, and the metal nanowires arranged to cross and having portions of side surfaces which protrude from one surface of the insulating layer.

Abstract: A biometric information measurement system and method are disclosed. A biometric information measurement system according to an embodiment of the present invention may comprise an implant device that is inserted into the human body so as to measure biometric information and an external device that transmits a signal to the implantable device while sweeping a frequency.

Abstract: A ternary logic circuit includes: a first inverter unit; a second inverter unit arranged in parallel with the first inverter unit; a first junction unit arranged between the first inverter unit and an output terminal and including a tunnel PN junction; and a second junction unit arranged between the second inverter unit and the output terminal and including a tunnel PN junction, wherein, when an absolute value of an input voltage applied to an input terminal is less than a first input voltage, the output terminal outputs a first output voltage, and when the absolute value of the input voltage is greater than the first input voltage and less than a second input voltage, the output terminal outputs a second output voltage, and when the absolute value of the input terminal is greater than the second input voltage, the output terminal outputs a third output voltage.

Abstract: The present disclosure relates to a crosslinkable compound, a composition containing the same for formation of a solid electrolyte, a method of preparing a solid electrolyte by using the composition, a solid electrolyte, and an electronic element including the solid electrolyte.

Abstract: This application relates to an active current compensation device which actively compensates for a noise occurring in a common mode in each of two or more high-current paths. In one aspect, the active current compensation device includes a sensing unit configured to generate an output signal corresponding to a common-mode noise current on each of the two or more high-current paths, and an amplification unit configured to amplify the output signal to generate an amplified current. The device may also include a compensation unit configured to generate a compensation current on the basis of the amplified current and allow the compensation current to flow to each of the two or more high-current paths, and a malfunction detection unit configured to detect a malfunction of the amplification unit. The malfunction detection unit and at least a portion of the amplification unit may be embedded in one integrated circuit (IC) chip.

Abstract: A transistor device includes a substrate, a fin structure extending on the substrate in a direction parallel to a top surface of the substrate, a source region and a drain region provided at an upper portion of the fin structure, a constant current generating layer provided at a lower portion of the fin structure, a gate insulating film provided on both side surfaces and a top surface of the upper portion of the fin structure, and a gate electrode provided on the gate insulating film, wherein the gate electrode is provided on the fin structure and between the source region and the drain region, the constant current generating layer generates a constant current between the drain region and the substrate, and the constant current is independent from a gate voltage applied to the gate electrode.

Abstract: This application relates to an active compensating device. In one aspect, the active compensating device includes two or more high current paths through which a second current supplied by a second device is transmitted to a first device, and a sensing unit sensing the first current on the high current paths and generating an output signal corresponding to the first current. The device may also include an amplifying unit amplifying the output signal of the sensing unit to generate an amplified current and a compensating unit generating a compensation current based on the amplified current and allowing the compensation current to flow to each of the two or more high current paths. The device may further include a first anti-disturbance unit connected in parallel to output terminals of the sensing unit, and a second anti-disturbance unit connected in parallel to input terminals of the compensating unit.

Abstract: A 3D spring array device includes: a fixed body having an internal space therein; a moving body positioned in a center of an x-y-z orthogonal coordinate system in the internal space, wherein the moving body is configured to be fastenable to the end effector of the mechanical impedance estimating robot; and a first spring, a second spring, a third spring, a fourth spring, a fifth spring, a sixth spring, a seventh spring, and an eighth spring and configured to connect the fixed body to the moving body in the internal space.

Abstract: Provided herein is a composite anode active material including: a porous carbon structure; a first coating layer on the porous carbon structure and including a non-carbonaceous material capable of intercalating and deintercalating lithium; and a second coating layer on the first coating layer and including a carbonaceous material.