Abstract: The present invention relates to a real-time parathyroid imaging apparatus including: a light source including an excitation filter capable of exciting parathyroid glands; and a camera including an image sensor and an emission filter of which a transmissivity ratio between a visible light region and a near-infrared emission wavelength region is N:1 (here, N<1). Through the present invention, a system may be implemented whereby a surgeon may acquire, in real-time during an operation, an autofluorescence image of the parathyroid glands by using a near-infrared light source, and an auto focus function may be used, and visible light and near-infrared autofluorescence images may be simultaneously fused and acquired without having to turn off the lights in an operating room.

Abstract: A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.

Abstract: Provided is a microfluidic film including a first microfluidic film including a first base film, a first microchannel, which is formed on the first base film and through which a fluid flows, and a first through passage, which is configured to pass through the first base film, and a second microfluidic film including a second base film being stacked on the first base film and a second through passage, which is configured to pass through the second base film and communicates with the first through passage.

Abstract: Provided is an apparatus for generating a microfluidic concentration field, the apparatus including: a substrate; a base film disposed on the substrate; a microchannel, which is formed in a space between the substrate and the base film and through which a fluid flows; a through passage, which communicates with the microchannel and is configured to pass through the base film; and a membrane, which is formed at a portion where the microchannel and the through passage communicate with each other and allows the fluid flowing along the microchannel and the through passage or a material flowing together with the fluid to selectively pass through the membrane, wherein a concentration field is formed between the fluid of the through passage and the fluid of the microchannel by the membrane.

Abstract: Provided is a microfluidic film including a base film, a microchannel, which is formed on the base film and through which a fluid flows, and a through passage, which is configured to pass through the base film and through which the base film stacked on an upper portion or a lower portion of the base film and the fluid communicate with each other.

Abstract: An amorphous silicon-carbon composite, a method for preparing the amorphous silicon-carbon composite using a pyrolysis method, a negative electrode for a lithium secondary battery, and a lithium secondary battery including the same.

Abstract: Disclosed are an implantable sensor driven by an alignment key, an implantable device comprising the implantable sensor, and a biometric data measurement system comprising the implantable device. The implantable device according to the present embodiment may comprise an implantable sensor forming a magnetic dipole moment in one direction from the inside to the outside of the body, and may be inserted into the body to measure biometric data by means of the implantable sensor.

Abstract: A processor-implemented method includes determining a first quantization value by performing log quantization on a parameter from one of input activation values and weight values in a layer of a neural network, comparing a threshold value with an error between a first dequantization value obtained by dequantization of the first quantization value and the parameter, determining a second quantization value by performing log quantization on the error in response to the error being greater than the threshold value as a result of the comparing; and quantizing the parameter to a value in which the first quantization value and the second quantization value are grouped.

Abstract: An apparatus includes: a random-access memory (RAM) configured to generate an analog output signal based on an input and a weight of a neural network, the RAM including a crossbar array structure; an analog-to-digital converter (ADC) circuit configured to generate a digital output signal based on a reference signal and the analog output signal of the RAM; a first ADC scaler configured to scale the reference signal of the ADC circuit; and a second ADC scaler configured to scale the digital output signal generated by the ADC circuit.

Abstract: A biometric information measurement system and method are disclosed. A biometric information measurement system according to an embodiment of the present invention may comprise an implant device that is inserted into the human body so as to measure biometric information and an external device that transmits a signal to the implantable device while sweeping a frequency.

Abstract: The present invention relates to a three-dimensional structure electrode, a method for manufacturing same, and an electrochemical element including the electrode. The present invention is characterized by comprising: (a) an upper conductive layer and a lower conductive layer which have a structure constituting an assembly within which a conductive material and a porous nonwoven fabric including a plurality of polymeric fibers are three-dimensionally connected in an irregular and continuous manner, thereby forming a mutually connected porous structure; and (b) an active material layer forming the same assembly structure as the conductive layers and forming a three-dimensionally filled structure in which electrode active material particles are uniformly filled inside the mutually connected porous structure formed in the assembly structure, wherein the active material layer is formed between the upper conductive layer and the lower conductive layer.

Abstract: The present invention relates to a parathyroid sensing system, and includes: a modulator for generating a modulation signal having a predetermined frequency; a lock-in amplifier and a light source which receive information on the modulation signal; an excitation filter for transmitting, among light emitted from the light source, only excitation light that excites parathyroid glands; an emission filter connected to a probe and selectively transmitting only fluorescence emitted from the parathyroid glands; a near-infrared sensor for sensing the autofluorescence that has passed through the emission filter, and converting the sensed autofluorescence into an electric signal; and a speaker for generating an alarm through the electric signal. Through the present invention, the locations of the parathyroid glands may be precisely identified even when lights are turned on in an operating room, and convenience may be provided by alerting a surgeon by means of an alarm when the parathyroid glands are detected.

Abstract: Disclosed are an electrode for gas generation, a method of preparing the electrode, and a device including the electrode for gas generation. The electrode includes a gas generating electrode layer and a three-dimensional (3D) super-aerophobic layer formed on at least one portion of the gas generating electrode layer and including porous hydrogel.

Abstract: Provided are an inverter including a first source and drain, an interlayer insulating film on the first source, a second source on the interlayer insulating film, a second drain on the first drain, a first channel between the first source and drain, a second channel over the first channel between the second source and drain, a gate insulating film covering outer surfaces of the first and second channel, a part of a surface of the first source in the direction to the first drain, a part of a surface of the second source in the direction to the second drain, a part of a surface of the first drain in the direction to the first source, and a part of a surface of the second drain in the direction to the second source, and a gate electrode between the first source and drain and between the second source and drain.

Abstract: A tunnel field effect transistor includes a source region and a drain region, positioned on a substrate, a channel region positioned between the source region and the drain region and having a first length in a first direction, a gate electrode positioned on the channel region, and a gate insulating layer positioned between the channel region and the gate electrode, wherein the source region is doped with impurities of a first conductivity type and the drain region is doped with impurities of a second conductivity type that is different from the first conductivity type, and one of the source region and the drain region includes an extension region extending toward the other region, the extension region being positioned under the channel region to form a constant current independent of a gate voltage of the gate electrode.

Abstract: A field-effect transistor for terahertz wave detection using a gate as an antenna includes a silicon substrate including a source and a drain formed outside a channel region surrounding the source, and a gate formed to be spaced apart from the silicon substrate and correspond to the channel region, on a dielectric layer formed on a surface of the silicon substrate, in which the drain has a width determined based on a first performance parameter associated with a terahertz wave reception rate of the field-effect transistor and the channel region has a width determined based on a second performance parameter associated with detection of a terahertz wave to be received by the field-effect transistor.

Abstract: A semiconductor memory device and a device including the same are provided. The semiconductor memory device includes word lines extending in a first direction on a semiconductor substrate; bit line structures extending across the word lines in a second direction crossing the first direction; contact pad structures between the word lines and between the bit line structures; and spacers between the bit line structures and the contact pad structures. The spacers include a boron nitride layer.

Abstract: An interconnect structure and an electronic apparatus including the interconnect structure are provided. The interconnect structure includes a conductive layer; a dielectric layer configured to surround at least a part of the conductive layer; and a diffusion barrier layer disposed between the conductive layer and the dielectric layer and configured to limit and/or prevent a conductive material of the conductive layer from diffusing into the dielectric layer, and at least one of the dielectric layer and the diffusion barrier layer includes a boron nitride layer of a low dielectric constant.

Abstract: Provided is a memory device for a logic-in-memory. The memory cell includes: a ternary memory cell for storing ternary data: and a weight cell for controlling a current flowing in an operation line on the basis of a weight signal transmitted from the ternary memory cell and an activation signal transmitted via an activation line, wherein the weight cell includes a first transistor for receiving an input of weight data from a first node corresponding to a stored value of the ternary memory cell, a second transistor for receiving an input of inversed weight data from a second node corresponding to an inversed stored value of the ternary memory cell, and a third transistor for receiving an input of an activation signal transmitted via the activation line.