Abstract: A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current.

Abstract: A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current.

Abstract: A light emitting device is disclosed. The light emitting device comprises a contact layer and an oxide transparent layer located directly on the contact layer. The contact layer has a stacked structure formed by alternately stacking a plurality of nitride semiconductor layers having a wider bandgap and a plurality of nitride semiconductor layers having a narrower bandgap.

Abstract: A package structure of a light emitting diode includes a substrate structure, a connection layer, and at least one conductive passage. The substrate structure sequentially includes a conduction board, an insulation layer, and a conductive layer. The insulation layer is configured to electrically insulate the conduction board from the conductive layer, and also to insulate a first portion from a second portion of the conduction board. The substrate structure has an opening to expose the conduction board. The connection layer configured to support and electrically couple to a first electrode of a light emitting diode (LED) is disposed in the opening. The connection layer is also configured to electrically couple to the conduction board and to be electrically insulated from at least one portion of the conductive layer, which is coupled to a second electrode of the LED.

Abstract: This invention this invention provides a light-emitting semiconductor device having enhanced brightness, to ensure even current distribution emitted by a front contact of the light emitting diodes so as to improve the light-emitting efficiency of the active layer. This invention adopts the method to manufacture the light-emitting device, comprising the steps of: forming an active layer on a substrate; forming a capping layer on the active layer to enhance current distribution, where a back contact is located on another side of the substrate and a front contact is located above the capping layer. This invention is characterized by: re-designing the front contact, by reducing the width of a metallic pattern constructing fingers or Mesh lines and increasing the number of the fingers or Mesh lines, so as to resolve the current crowding problem.

Abstract: A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type semiconductor layer successively formed atop the substrate. The method forms an intermediate layer having a predetermined pattern between the substrate and the semiconductor layer, or between the semiconductor layer and the n-type semiconductor layer, or between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer has an uneven top layer due to the intermediate layer having a predetermined pattern and the total internal reflection of the LED can be reduced. The intermediate layer is a conductive material to reduce serial resistance of the LED.

Abstract: Disclosed is a Group III nitride semiconductor device comprising a stress-absorbing layer having: an amorphous silicon nitride layer, an aluminum interlayer, an amorphous aluminum nitride pre-layer and a polycrystalline Group III nitride layer containing aluminum. The stress-absorbing layer is located between a silicon substrate and a Group III nitride semiconductor, for alleviating stress resulted from different lattice constants between the Group III nitride substance and the silicon substrate, thereby preventing cracking of the Group III nitride semiconductor due to the stress. Further disclosed is a method of manufacturing Group III nitride semiconductor device.

Abstract: A light emitting diode device and method of manufacturing comprises a light-transmission conductive layer and a patterned transparent conductive layer. In accordance with the present invention, the light-transmission conductive layer and the patterned transparent conductive layer is spread optimal area above the LED device so as to enhance the transparency and ohmic property of LED device.

Abstract: A method of the present invention for making a LED includes providing a semiconductor layer of a first polarity, forming an active layer on the semiconductor layer, and forming a semiconductor layer of a second polarity on the active layer. At least one side of at least the active layer and a semiconductor layer of the second polarity is of irregular shape. This shape thereby reduces the probability of reflecting light emitted from the active layer, thus making light emitted from the active layer penetrate through the at least one side and be emitted outside the LED.

Abstract: A light emitting diode (LED) and a method of making the same are disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein at least the active layer and the semiconductor layer of the second polarity have a side of irregular shape and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.

Abstract: A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type semiconductor layer successively formed atop the substrate. The method forms an intermediate layer having a predetermined pattern between the substrate and the semiconductor layer, or between the semiconductor layer and the n-type semiconductor layer, or between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer has an uneven top layer due to the intermediate layer having a predetermined pattern and the total internal reflection of the LED can be reduced. The intermediate layer is a conductive material to reduce serial resistance of the LED.

Abstract: A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type semiconductor layer successively formed atop the substrate. The method forms an intermediate layer having a predetermined pattern between the substrate and the semiconductor layer, or between the semiconductor layer and the n-type semiconductor layer, or between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer has an uneven top layer due to the intermediate layer having a predetermined pattern and the total internal reflection of the LED can be reduced. The intermediate layer is a conductive material to reduce serial resistance of the LED.

Abstract: A method for integrating a compound semiconductor with a substrate of high thermal conductivity is provided. The present invention employs a metal of low melting point, which is in the liquid state at low temperature (about 200° C.), to form a bonding layer. The method includes the step of providing a compound semiconductor structure, which includes a compound semiconductor substrate and an epitaxial layer thereon. Then, a first bonding layer is formed on the epitaxial layer. A substrate of thermal conductivity greater than that of the compound semiconductor substrate is selected. Then, a second bonding layer is formed on the substrate. The first bonding layer and the second bonding layer are pressed to form an alloy layer at low temperature.

Abstract: A LED stacking manufacturing method and its structure thereof, mainly uses a stacking method to integrate the epitaxial layer and the high-thermal-conductive substrate by twice bonding process, and the converted epitaxial layer of the temporary bonded substrate replaces the epitaxial wafer growth substrate, and the second bonded layer of the etch stop layer of the epitaxial layer is bonded with the second bonded layer of the high-thermal-conductive substrate to form an alloy layer with permanent connection, and then the temporary bonded substrate is removed, such that the process completes the integration of the epitaxial layer and the high-thermal-conductive substrate and makes the ohmic contact layer to face upward to provide a better reliability and efficiency of optical output of the LED.

Abstract: A semiconductor light emitting device and a method for manufacturing the same are disclosed. The semiconductor comprises a light scattering-deflecting layer located on a semiconductor layer having a scraggly surface. Light is deflected due to the difference of refractive index when the light enters the semiconductor layer from the light scattering-deflecting layer, and the light scatters when the light enters the scraggly surface of the semiconductor layer, thereby enabling the semiconductor light emitting device to emit more light so as to increase the light emitting efficiency of the semiconductor light emitting device.

Abstract: A method for manufacturing light-emitting device on non-transparent substrate includes the steps of forming a semiconductor epitaxial layer, a first conductive layer, a reflecting layer and a first conduction layer on a first substrate, and forming second conduction layer on a second substrate. Afterward, the first conduction layer and the second conduction layer is bounded by thermal pressing. The first substrate is then removed and a second conductive layer is formed to complete a light-emitting device. The light-emitting device can be incorporated with wetting layer and blocking layer to prevent inner diffusion and enhance external quantum efficiency.

Abstract: A method for manufacturing light-emitting device on non-transparent substrate includes the steps of forming a semiconductor epitaxial layer, a first conductive layer, a reflecting layer and a first conduction layer on a first substrate, and forming second conduction layer on a second substrate. Afterward, the first conduction layer and the second conduction layer is bounded by thermal pressing. The first substrate is then removed and a second conductive layer is formed to complete a light-emitting device. The light-emitting device can be incorporated with wetting layer and blocking layer to prevent inner diffusion and enhance external quantum efficiency.

Abstract: The present invention provides a quantum well device and a method of forming the same. The quantum well device comprises alternately stacked n layers of quantum well layers and n layers of barrier layers, wherein the quantum well layers and barrier layers are alternatively doped with dopant, and n is a positive integer. The dopant of a predetermined concentration is applied to control the breakdown voltage and output intensity of the quantum well device and to consequently avoid artificial and mechanical ESD failure.

Abstract: A structure of a light emitting diode (LED) and a method of making the same are disclosed. The present invention is suitable for the light emitting diode having the area that is larger than 100 mil2 and having the insulating substrate, and is featured in that the P electrode and the N electrode are mutually intercrossed. With the use of the present invention, the light emitted by each individual unit chip is more even; the operating voltage of the device is reduced; the cut size of the device can be enlarged arbitrarily according to the size of the unit chip; and the light emitting efficiency is increased.

Abstract: A light emitting diode (LED) and method of making the same are disclosed. The present invention uses a layer of transparent adhesive material to bond a transparent substrate and a LED epitaxial structure having a light-absorbing substrate. The light absorbing substrate is then removed to form a LED having a transparent substrate. By the use of the transparent substrate, the light emitting efficiency of the LED can be significantly improved.