Abstract: A structure of a light emitting diode (LED) and a method of making the same are disclosed. The present invention is suitable for the light emitting diode having the area that is larger than 100 mil2 and having the insulating substrate, and is featured in that the P electrode and the N electrode are mutually intercrossed. With the use of the present invention, the light emitted by each individual unit chip is more even; the operating voltage of the device is reduced; the cut size of the device can be enlarged arbitrarily according to the size of the unit chip; and the light emitting efficiency is increased.

Abstract: The present invention discloses a light-emitting device (LED) with a textured interface formed by utilizing holographic lithography. Two coherent light beams are overlaid to cause constructive and destructive interference and thereby periodical alternative bright and dark lines are formed. A wafer coated with a photoresist material is exposed under the interference lines. After a developing step, a photoresist pattern with textured surface is formed on the wafer. Thereafter, the textured photoresist pattern is transferred to the wafer by etching process and result in a desired light-emitting device with a textured interface.

Abstract: The present invention is related to a method of manufacturing high efficiency LEDs. The LEDs uses a metal reflection layer to solve the problem of light absorption by the substrate, and improves the illumination. It also forms a vertical structure where the P and N ends are on the top and bottom sides of the LEDs, respectively. A vertical structure is easier for final packaging. In addition, the present invention uses a metal substrate to replace the semiconductor substrate in order to improve the heat dissipation, and enable the LEDs to operate at a higher current.

Abstract: A method for integrating a compound semiconductor with a substrate of high thermal conductivity is provided. The present invention employs a metal of low melting point, which is in the liquid state at low temperature (about 200° C.), to form a bonding layer. The method includes the step of providing a compound semiconductor structure, which includes a compound semiconductor substrate and an epitaxial layer thereon. Then, a first bonding layer is formed on the epitaxial layer. A substrate of thermal conductivity greater than that of the compound semiconductor substrate is selected. Then, a second bonding layer is formed on the substrate. The first bonding layer and the second bonding layer are pressed to form an alloy layer at low temperature.

Abstract: The present invention disclosed a light emitting diode (LED) and method for manufacturing the same. The light emitting diode includes a transparent substrate connected to an epitaxial layer with absorption substrate via a transparent adhesive layer. Then, the absorption substrate is removed to form a light emitting diode with the transparent substrate. Because of the low light absorption of the transparent substrate, the present invention provides high luminescence efficiency. Furthermore, because the first metal bonding layer is electrical connected with the first ohmic contact layer by the electrode connecting channel, the voltage is decreased and the current distribution is increased in the fixed current to improve the luminous efficiency of a light emitting diode.

Abstract: A surface-light-emitting device including a semiconductor substrate, and a laminar semiconductor structure consisting of a plurality of semiconductor layers formed by epitaxial growth on the semiconductor substrate, the laminar semiconductor structure including a light-generating layer, and two multi-film reflecting layers between which the light-generating layer is interposed and which constitute a light resonator for reflecting a light generated by the light-generating layer, the structure having a light-emitting surface at one of opposite ends thereof remote from the substrate, so that the light generated by the light-generating layer is emitted from the light-emitting surface, wherein the two multi-film reflecting layers consist of a first multi-film reflecting layer formed principally of AlGaInP on the substrate, and a second multi-film reflecting layer formed principally of AlGaAs on one of opposite sides of the light-generating layer which is remote from the substrate.

Abstract: A light emitting diode (LED) is disclosed. An emitted light can be prevented from being absorbed by a substrate using a Bragg reflector layer with high reflectivity. The present invention provides a Bragg reflector layer comprising a plurality of high aluminum-containing AlGaAs/AlGaInP layers or high aluminum-containing AlGaAs/ low aluminum-containing AlGaInP layers formed on the substrate before the epitaxial structure of the light emitting diode being formed. Since the high aluminum-containing AlGaAs is oxidized and formed an oxide of a lower refraction index, the reflectivity and high reflection zones of the oxidized Bragg reflector layer are much larger. According to the electrical insulation characteristic of the oxide, the Bragg reflector layer can limit the current within the oxidized regions of high aluminum-containing AbGaAs layer. Therefore, the aforementioned light emitting diode structure has a higher brightness than the conventional light emitting diode.

Abstract: The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on the substrate by either HVPE, OMVPE or MBE and applying a microwave treatment over the p-type impurity doped compound semiconductor layer for a period of time. The high resistivity p-type impurity doped compound semiconductor layer is converted into a low resistivity p-type compound semiconductor material according to the present invention.

Abstract: A method for cutting Group III nitride semiconductor light emitting element comprises the step of discharge-etched on a front face of a chip or cutting channel of a substrate; and breaking on a back surface of the discharge-etching face to be formed with dies. This method is different from the prior art dicing saw and point scribe. Thus, the cutting time is shortened. The consumption of the diamond knife from cutting is reduced. The yield ratio of dies is improved and the outlook is also improved.

Abstract: The present invention provides materials and structures to reduce dislocation density when growing a III-nitride compound semiconductor. A II-nitride compound single crystal-island layer is included in the semiconductor structure, and III-nitride compound semiconductor layers are to grow thereon. It reduces the dislocation density resulted from the difference between the lattice constants of the GaN compound semiconductor layers and the substrate. It also improves the crystallization property of the III-nitride compound semiconductor.

Abstract: The present invention disclosed a light emitting diode (LED) and method for manufacturing the same. The light emitting diode includes a transparent substrate connected to an epitaxial layer with absorption substrate via a transparent adhesive layer. Then, the absorption substrate is removed to form a light emitting diode with the transparent substrate. Because of the low light absorption of the transparent substrate, the present invention provides high luminescence efficiency. Furthermore, because the first metal bonding layer is electrical connected with the first ohmic contact layer by the electrode connecting channel, the voltage is decreased and the current distribution is increased in the fixed current to improve the luminous efficiency of a light emitting diode.

Abstract: The present invention provides a method of manufacturing a light emitting diode based on an epitaxial layer structure. The epitaxial layer structure includes a substrate of a first conductivity type, a lower cladding layer of the first conductivity type formed on a top side of the substrate, an active layer formed on the lower cladding layer, an upper cladding layer of a second conductivity type formed on the active layer, at least one upper aluminum-rich layer formed on the upper cladding layer, and a cap layer formed on the at least one upper aluminum-rich layer. The method includes the steps of forming an opening hole in the epitaxial layer structure for passing through each upper aluminum-rich layer, oxidizing a predetermined region of each upper aluminum-rich layer, filling the opening hole with an insulating material, and forming an upper electrode on the cap layer and a lower electrode on a back side of the substrate.

Abstract: The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on the substrate by either HVPE, OMVPE or MBE and applying a microwave treatment over the p-type impurity doped compound semiconductor layer for a period of time. The high resistivity p-type impurity doped compound semiconductor layer is converted into a low resistivity p-type compound semiconductor material according to the present invention.

Abstract: The present invention provides a semiconductor device with a roughened surface that increases external quantum efficiency thereof. Roughening of the semiconductor device surface is done by epitaxial growth techniques that may include hydride vapor phase epitaxy (HVPE) technique, organometallic vapor phase epitaxy (OMVPE) technique, or molecular beam epitaxy (MBE) technique.

Abstract: The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on the substrate by either HVPE, OMVPE or MBE and applying a microwave treatment over the p-type impurity doped compound semiconductor layer for a period of time. The high resistivity p-type impurity doped compound semiconductor layer is converted into a low resistivity p-type compound semiconductor material according to the present invention.

Abstract: The present invention discloses a light emitting device which includes a substrate, a light emitting layer on the substrate, a current restriction layer on the light emitting layer, a current spreading layer on the current restriction layer, a dielectric layer on the current spreading layer defining an exposed area, a top ohmic contact metal layer on the exposed area, and a bottom ohmic contact metal layer under the substrate. The current spreading layer has a rough top surface. The current restriction layer includes a conductive layer that allows current to flow through, and an insulating layer around the conductive layer. The insulating layer prohibits the current from flowing through in a path between the top ohmic contact metal layer and the bottom ohmic contact metal layer. The substrate is partially removed to form a cavity for avoiding substrate absorption.

Abstract: The present invention provides a process for effectively producing a high performance light emitting device. A substrate on which an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer are formed is provided. The N-type semiconductor layer is cut to be discontinuous. Then the substrate is microwaved. Not only the present invention takes advantage of microwaving process for producing a high performance light emitting device, but also avoids the shortcoming of the device cracking due to over activation of the N-type semiconductor layer by microwave processing.

Abstract: The present invention provides materials and structures to reduce dislocation density when growing a III-nitride compound semiconductor. A II-nitride compound single crystal-island layer is included in the semiconductor structure, and III-nitride compound semiconductor layers are to grow thereon. It reduces the dislocation density resulted from the difference between the lattice constants of the GaN compound semiconductor layers and the substrate. It also improves the crystallization property of the III-nitride compound semiconductor.

Abstract: A semiconductor light emitting device has a transparent substrate, an n-type semiconductor layer, a p-type semiconductor layer, an n-type transparent electrode, a p-type transparent electrode, an n-type bonding pad, and a p-type bonding pad. The n-type semiconductor layer is disposed over the transparent substrate. The p-type semiconductor layer and the n-type transparent electrode are provided on the n-type semiconductor layer and arranged alternatively to each other, where the p-type semiconductor layer and the n-type transparent electrode cover different portions of the n-type semiconductor layer respectively. The p-type transparent electrode is provided in contact with the p-type semiconductor layer. The n-type and p-type bonding pads are disposed on the n-type and p-type transparent electrodes respectively, and the areas of these bonding pads are smaller than the area of the corresponding electrodes.

Abstract: A method of fabricating a semiconductor light-emitting device is provided in the present invention. The semiconductor light-emitting device includes a light-emitting region such as a PN-junction, or a double heterojunction, or a multiple quantum well. According to the invention, an layer consisting of an electrode material is formed overlaying a top-most layer of the semiconductor light-emitting device. Afterwards, an annealing process is performed to the resultant structure so that the electrode material diffuses into the top-most layer. Subsequently, the layer consisting of the electrode material is etched partially to formed an upper electrode on the top-most layer and to expose part of the top-most layer. Substantially, the exposed part of the top-most layer exhibits a rough morphology. Thereby, the external quantum efficiency of the semiconductor light-emitting device is enhanced. The method can be implemented regardless of material and lattice orientation of the top-most layer.