Abstract: Provided are a method and system for novel-view image synthesis and rendering, a device and a medium. The method includes: acquiring initial information of a target model; performing neural texturing on the initial information to obtain neural texture (NT) information; and inputting the NT information to a synthesis rendering model to obtain a rendered image, where the synthesis rendering model includes an NT input module, an NT learning network module, and a differentiable renderer that are connected to each other; the NT input module receives the NT information, and transmits the NT information to the NT learning network module; the NT learning network module performs convolution and activation as well as concatenation on the NT information to obtain NT processed information; and the differentiable renderer adjusts and renders the NT processed information in a neural rendering manner to obtain the rendered image.

Abstract: The present disclosure discloses an adaptive high-precision compression method and system based on a convolutional neural network model, and belongs to the fields of artificial intelligence, computer vision, and image processing. According to the method of the present disclosure, coarse-grained pruning is performed on a neural network model by using a differential evolution algorithm first, and the coarse-grained space is quickly searched through an entropy importance criterion and an objective function with good guidance to obtain a near-optimal neural network structure. Then fine-grained search space is built on the basis of an optimal individual obtained from the coarse-grained search, and fine-grained pruning is performed on the neural network model by a differential evolution algorithm to obtain a network model with an optimal structure. Finally, the performance of the optimal model is restored by using a multi-teacher multi-step knowledge distillation network to reach the precision of an original model.

Abstract: A method for manufacturing a semiconductor device is provided. A drift region and a compensation region are formed through a deep trench etching and a filling technology. A plurality of modulation doping regions are formed at a top of the drift region by an epitaxy and an ion implantation. A modulation region is introduced, wherein the modulation region flexibly modifies capacitance characteristics and achieve improved dynamic characteristics.

Abstract: A network emulation system supporting a flexible and efficient dynamic experiment emulates a network based on container, veth-pair, traffic control (TC), and other technologies and sets a network state management model based on a key-value pair, thereby constructing a network emulation system supporting a flexible and efficient dynamic experiment. The system flexibly realizes the dynamic performance of a plurality of dimensions, namely, dynamic node start/stop, dynamic node attribute configuration, dynamic link start/stop, and dynamic link attribute configuration. Based on the network state management model, the network emulation system provides a concise and unified dynamic application programming interface (API) for an upper layer. Researchers can call the API in their network innovation programs at any time after an emulation network is deployed to achieve efficient, batch-processing, and programmable dynamic management.

Abstract: The present invention discloses a Self-detection circuit based on power detector, comprising a power detector, a coupler, a phased array transmitting channel 1 and a phased array transmitting channel 2, and the power detector is divided into two working modes of phase test and amplitude test. The problems that the self-test circuit is complex and large in chip area are solved.

Abstract: A reverse time migration imaging method for cased-hole based on ultrasonic pitch-catch measurement, including: calculating a theoretical dispersion curve; expanding original Lamb data of two receivers into array waveform data based on phase-shift interpolation; establishing a two-dimensional migration velocity model including density, P-wave velocity and S-wave velocity of a target area; generating and storing a forward propagating ultrasonic wavefield for each time step; reversing a time axis; generating and storing a reversely propagating ultrasonic Lamb wavefield for the two receivers after phase-shift interpolation; calculating envelopes of the forward propagating ultrasonic Lamb wavefield and the reversely propagating ultrasonic Lamb wavefield; applying a zero-lag cross-correlation imaging condition to obtain reverse time migration imaging results; and applying Laplace filtering to suppress low-frequency imaging noises in the imaging results.

Abstract: A split gate carrier stored trench bipolar transistor (CSTBT) with current clamping PMOS include a P-type buried layer and a split gate electrode with equal potential to an emitter metal on the basis of the traditional CSTBT, which effectively eliminates the influence of an N-type carrier stored layer on breakdown characteristics of the device through the charge compensation effect, and helps to improve the trade-off relationship between the on-state voltage drop and the turn-off loss. Moreover, the introduction of a parasitic PMOS structure can reduce the saturation current and improve short-circuit safe operating area of the device, reduce the Miller capacitance, and improve the switching speed of the device and reduce the switching loss of the device. In addition, the split gate CSTBT integrating the split gate electrode and gate electrode in the same trench can shorten the distance between PMOS and NMOS channels.

Abstract: A device for measuring a microwave surface resistance of a dielectric conductor deposition interface includes: a test platform, a calibration component, a sealing cavity and a support plate; wherein the test platform comprises: a shielding cavity having an open bottom, a dielectric rod, an input coupling structure, an output coupling structure, and a dielectric supporter; the dielectric conductor test sample and the test platform form a TE0m(n+?) mode dielectric resonator; the calibration component and the dielectric conductor test sample are mounted on the test platform to measure corresponding quality factors, thereby calculating the microwave surface resistance of the deposition interface of the dielectric conductor test sample. The present invention requires no pre-measurement of relative permittivity and loss tangent of the dielectric conductor test sample.

Abstract: The present disclosure provides a hetero-integrated terahertz low-noise miniaturized image frequency rejection transceiver front-end, including an intermediate frequency circuit and a terahertz circuit arranged up and down, where the terahertz circuit includes a local oscillator frequency tripler, a 135° 3 dB filter coupler, a radio frequency waveguide power divider, and two quartz hetero-integrated subharmonic mixers; resonant cavities of an input unit, a first output unit, an isolation unit, and a second output unit of the 135° 3 dB filter coupler are sequentially coupled through resonant grooves to form a ring structure, a cavity length of the resonant cavity of the input unit is twice that of the resonant cavities of the other three units, and an electrical length of a waveguide of the first output unit is 45° different from that of a waveguide of the second output unit.

Abstract: A lateral power semiconductor device layout and a device structure belong to the technical field of power semiconductor devices. A method for designing a lateral power semiconductor device layout with high integrity and high cell density has the following advantages of reducing a specific on-resistance of the device, increasing a width of a channel per unit area, improving the current capability of the device, optimizing the static characteristic of the device, reducing the area of a drain region and the parasitic capacitance of the device, reducing the delay time of a cell switch caused by an excessively long gate electrode of a traditional finger cell, optimizing the dynamic characteristic of the device, optimizing the cell edge of the device and the curvature effect of a terminal, and reducing the pre-breakdown risk of the device.

Abstract: The disclosure claims a method of stimulating a conditional quantum master equation in a quantum transport process by a recurrent neural network, comprising the following steps of: establishing a recurrent neural network which is a long short term memory network (LSTM), wherein the LSTM comprises TLSTM cells arranged in chronological order, and each LSTM cell has an input value xt and an output value ht, and there is a parameter (W, b) in the LSTM cell; replacing the input value xt with a shot noise spectrum S(?) of the current obtained according to the conditional quantum master equation; replacing the output value ht with a trace of density matrices in the conditional quantum master equation; and replacing the parameter (W, b) with a connection between density matrices in the conditional quantum master equation at imminent moments.

Abstract: A power semiconductor device, including a cell region, a transition region, and a terminal region. The transition region is located between the cell region and the terminal region of the device. A first conduction type substrate, a first conduction type epitaxial layer located above the first conduction type substrate, and a first conduction type buffer layer located in the first conduction type epitaxial layer are jointly arranged at the bottoms of the cell region, the transition region, and the terminal region of the device. In a high-current application, since the cell region occupies the largest area of a chip, in a case that breakdown can occur in the cell region and the current can be discharged through the cell region. On the basis of ensuring the BV of the terminal region, a silicon layer step is formed by elevating the position of a top structure of the terminal region.

Abstract: Provided herein is a tunnel electromagnetic joint scanning detection method and a system thereof. It introduces a new tunnel electromagnetic detection system called TEJS, realizes three-dimensional joint inversion of multi-component, time domain and frequency domain signals, and forms tunnel joint scanning imaging. This method adopts the mode of surface transmission, underground reception, multi-source transmission and multi-component reception. Based on an observation system, a large number of stochastic models are constructed and numerically simulated, and a large number of training data sets are constructed by using the simulated data to complete the training of UNet model. This model can realize real-time and fast imaging of the position of the low-resistance anomalous body in three-dimensional space. An algorithm forms a dual checking mechanism through surface imaging and underground imaging, which constrains the three-dimensional spatial position of anomalous body together to prevent misjudgment.

Abstract: The present disclosure discloses a three-dimensional inversion method of airborne transient electromagnetics based on deep learning. The method of the present disclosure proposes two strategies that focus on training datasets, to improve the performance of deep learning models, including divide and conquer strategy and random models generating. Through a large of reasonable structural models, appropriate network setups, a more generalized result can be obtained through our proposed U-Net framework, which has been demonstrated to be effective on both synthetic and field data. This scheme can realize the rapid prospecting of three-dimensional resistivity structure in large-area target region, and solve the problem of low efficiency of traditional three-dimensional inversion calculation of ATEM and poor migration ability of three-dimensional inversion based on deep learning developed by predecessors.

Abstract: The present disclosure provides a blockchain sharding method, system, and server based on locally repairable system codes. The blockchain sharding system includes k original shards and n?k encoding shards. In each round of consensus, each original shard and m corresponding encoding shards form a local verification group (m<<n?k), and each encoding shard and t original shards participating in generation of the encoding shard form local recovery groups (t<<k). The local verification group is responsible for verifying whether a to-be-verified transaction is legitimate. When a single shard in the verification group is corrupted, the remaining m shards can reach a consistent verification result. According to the principle that the minority is subordinate to the majority, the verification group can still correctly verify the legitimacy of the transaction.

Abstract: A multi-level gate driver applied to the SiC metal-oxide-semiconductor field-effect transistor (MOSFET) includes three parts: the SiC MOSFET information detection circuit, the signal level shifting circuit, and the segmented driving circuit. The SiC MOSFET information detection circuit includes the SiC MOSFET drain-source voltage detection circuit and the SiC MOSFET drain-source current detection circuit. The segmented driving circuit includes a turn-on segmented driving circuit and a turn-off segmented driving circuit.

Abstract: This invention, falling into the field of radio communication technology, discloses 5G millimeter wave dual-band dual-mode mixer and wireless communication terminal. In the said 5G millimeter wave dual-band dual-mode mixer, the first MOSFET is connected to the source of the second MOSFET and the third MOSFET through its drain, with the first MOSFET connected to the drain of the fourth MOSFET through its drain. The second MOSFET is connected to one end of the first capacitor through its gate, with the other end of the first capacitor connected to the drain of the third MOSFET. The third MOSFET is connected to one end of the second capacitor through its gate and the other end of the second capacitor is connected to the drain of the second MOSFET.

Abstract: Embodiments of the present disclosure provide a quantitative method and system for attention based on a line-of-sight estimation neural network, which improves the stability and training efficiency of the line-of-sight estimation neural network. A few-sample learning method is applied to training of the line-of-sight estimation neural network, which improves generalization performance of the line-of-sight estimation neural network. A nonlinear division method for small intervals of angles of the line of sight is provided, which reduces an estimation error of the line-of-sight estimation neural network. Eye opening and closing detection is added to avoid the line-of-sight estimation error caused by an eye closing state. A method for solving a landing point of the line of sight is provided, which has high environmental adaptability and can be quickly used in actual deployment.

Abstract: An endoscopic image segmentation method based on a single image and a deep learning network achieves real-time and accurate segmentation for a single case, and provides support for making a treatment plan based on an endoscopic image in clinical medicine. The endoscopic image segmentation method first proposes a single image-based training set generation method to automatically generate a training set, and further proposes a lightweight deep learning network EUnet to perform feature fitting on the generated training set, to achieve endoscopic image segmentation and obtain a segmentation result of a lesion region. The endoscopic image segmentation method can significantly improve segmentation accuracy and has advantages of a small volume, high real-time performance, and easy operation.

Abstract: A lateral power semiconductor device is provided and includes a second doping type substrate, a first doping type buried layer, a second doping type epitaxial layer, a first doping type drift area, a second doping type first body area, a first doping type drain area, a first doping type source area, a second doping type second body area, a dielectric layer, a control gate, a body electrode, second doping type polysilicon and first doping type polysilicon. The control gate is led out and connected to different potentials; when the device is in an off state, the control gate is connected to a low potential to assist the drift area in depletion; and when the device is in an on state, the control gate is connected to a high potential, and more carriers are induced on a silicon surface below the control gate.