Abstract: The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiTa2O6-based microwave dielectric ceramic material co-sintered at low temperature and its preparation method. Based on the low melting point characteristics of CuO and B2O3, and the radius of Cu2+ ions is similar to that of Ni2+ and Ta5+ ions, the chemical general formula of the invention is designed as xCuO-(1-x)NiO-[7.42y+(xy/14.33)]B2O3—Ta2O5, and the molar content of each component is adjusted from raw materials. The main crystalline phase of NiTa2O6 is synthesized at a lower pre-sintering temperature, and NiTa2O6-based ceramic material with low-temperature sintering characteristics and excellent microwave dielectric properties are directly synthesized at one time, which broadened the application range in LTCC field.

Abstract: A breathing-driven flexible respiratory sensor includes: a test cavity and a digital electrometer, wherein an upper internal wall of the test cavity is provided with an upper detecting component, and a lower internal wall of the test cavity is provided with a lower detecting component; the upper detecting component and the lower detecting component is arranged in a longitudinal symmetry form; wherein the upper detecting component comprises a substrate, an electrode and a gas sensitive film bonded in sequence from top to bottom, and the substrate is bonded to the upper internal wall of the test cavity; wherein a rubber airbag is disposed in the test cavity, and a friction film is bonded to the rubber airbag; an air inlet cylinder is connected to a left end of the rubber airbag, and an air outlet cylinder is connected to a right end of the rubber airbag.

Abstract: An MOFs composite electrode material for supercapacitors includes: a Ni-BSC matrix, and a PEDOT coating layer coated on the Ni-BTC matrix, wherein a molar ratio of EDOT to Ni-BTC is 1:(1-4) based on a molar amount of EDOT monomer. A method for preparing the MOFs composite electrode material includes steps of: using nickel nitrate hexahydrate and benzenetricarboxylic acid as raw materials to synthesize Ni-BTC by a hydrothermal method; and using a liquid phase method to grow PEDOT on a surface of the Ni-BTC. An MOFs composite electrode slurry and a working electrode for the supercapacitors including the above MOFs composite electrode material or a MOFs composite electrode material prepared by the above method are also provided. The MOFs composite electrode material provided by the present invention combines advantages of Ni-BTC and PEDOT.

Abstract: A fish-like underwater robot includes a shell, a driving assembly and an integrated tension and swing component. The integrated tension and swing component includes a plurality of tension ropes and tension elements. Every two adjacent tension elements are connected in series through the plurality of tension ropes. The driving assembly and the integrated tension and swing component are disposed inside the shell. The driving assembly is disposed at a head of the shell. The integrated tension and swing component has an end connected to a tail of the shell and an end connected to the driving assembly. When the fish-like underwater robot is used, the driving assembly drives the integrated tension and swing component to swing to generate power for forward movement. A traditional fish-like tail swing structure is replaced with an integrated tension skeleton structure.

Abstract: A device for measuring surface temperature of a turbine blade based on a rotatable prism includes a probe, a prism rotating apparatus and an optical focusing apparatus. The prism rotating apparatus and the optical focusing apparatus are located inside the probe. The probe includes a probe outer casing, a probe inner casing, a water-cooled casing pipe, a sapphire window piece, a quartz prism, a light pipe, a collimating lens, a focusing lens and an infrared array detector. The prism rotating apparatus includes a rotary motor, a worm, a gear and a prism rotary table, the rotary motor rotates to drive the prism rotary table to rotate. The optical focusing apparatus includes a telescopic motor, a coupler, a lead screw and a drive rod, the telescopic motor rotates to drive the lead screw, so as to further drive the drive rod to move along the slot.

Abstract: A bidirectional conduction trench gate power MOS device and a manufacturing method thereof are provided. A gate electrode, a source electrode and a drain electrode are formed on a surface of a silicon wafer to realize a bidirectional conduction and bidirectional blocking power MOS device used in an application environment such as lithium battery BMS protection.

Abstract: A method for manufacturing a semiconductor device is provided. A drift region and a compensation region are formed through a deep trench etching and a filling technology. A plurality of modulation doping regions are formed at a top of the drift region by an epitaxy and an ion implantation. A modulation region is introduced, wherein the modulation region flexibly modifies capacitance characteristics and achieve improved dynamic characteristics.

Abstract: A copper nanocatalyst, a method for preparing the copper nanocatalyst, and an application of the copper nanocatalyst in the synthesis of acetate or ammonia are provided. The copper nanocatalyst includes a substrate and an active agent loaded on the substrate. The method includes: preparing a cleaning agent by using an ethanol and a deionized; immersing the active agent in the cleaning agent, ultrasonically cleaning for 5-10 min at a frequency of 4×104 Hz-8×104 Hz, and drying for later use; mixing the cleaned active agent and a conductive binder according to a mass ratio of 1:19-9:1 of the active agent to the conductive binder, adding the ethanol, and fully stirring and dispersing to obtain a slurry; coating the slurry on a surface of the carbon paper, and drying the carbon paper by blowing through nitrogen flow to obtain the catalyst.

Abstract: A nano-wall integrated circuit structure with high integration density is disclosed, which relates to the fields of microelectronic technology and integrated circuits (IC). Based on the different device physical principles with MOSFETs in traditional ICs, the nano-wall integrated circuit unit structure (Nano-Wall FET, referred to as NWaFET) with high integration density can improve the integration of the IC, significantly shorten the channel length, improve the flexibility of the device channel width-to-length ratio adjustment, and save chip area.

Abstract: A split gate carrier stored trench bipolar transistor (CSTBT) with current clamping PMOS include a P-type buried layer and a split gate electrode with equal potential to an emitter metal on the basis of the traditional CSTBT, which effectively eliminates the influence of an N-type carrier stored layer on breakdown characteristics of the device through the charge compensation effect, and helps to improve the trade-off relationship between the on-state voltage drop and the turn-off loss. Moreover, the introduction of a parasitic PMOS structure can reduce the saturation current and improve short-circuit safe operating area of the device, reduce the Miller capacitance, and improve the switching speed of the device and reduce the switching loss of the device. In addition, the split gate CSTBT integrating the split gate electrode and gate electrode in the same trench can shorten the distance between PMOS and NMOS channels.

Abstract: A three-dimensional carrier stored trench IGBT and a manufacturing method thereof are provided. A P-type buried layer and a split gate electrode with equal potential to an emitter metal is introduced on the basis of the traditional carrier stored trench IGBT, which can effectively eliminate the influence of an N-type carrier stored layer on breakdown characteristics of the device through the charge compensation, and at the same time can reduce the on-state voltage drop and improve the trade-off relationship between the on-state voltage drop Vceon and the turn-off loss Eoff. The split gate electrodes is introduced in the Z-axis direction, so that the gate electrodes are distributed at intervals. Therefore, the channel density is reduced. The turning on of the parasitic PMOS has a potential-clamping effect on the NMOS channel, so that the saturation current can be reduced and a wider short-circuit safe operating area (SCSOA) can be obtained.

Abstract: An SOI lateral homogenization field high voltage power semiconductor device, and a manufacturing method and application thereof are provided. The device includes a type I conductive semiconductor substrate, a type II conductive drift region, a type I field clamped layer, type I and type II conductive well regions, the first dielectric oxide layer forming a field oxide layer, the second dielectric oxide layer forming a gate oxide layer, a type II conductive buried dielectric layer, a type II conductive source heavily doped region, a type II conductive drain heavily doped region. The first dielectric oxide layer and the floating field plate polysilicon electrodes form a vertical floating field plate distributed throughout the type II conductive drift region to form a vertical floating equipotential field plate array. When the device is in on-state, high doping concentration can be realized by the full-region depletion effect form the vertical field plate arrays.

Abstract: Disclosed is an in-situ vacuum reaction system for dynamically detecting defects, which includes an electron paramagnetic resonance spectrometer, an in-situ vacuum reaction chamber, a gas supply unit, a vacuum unit, an illumination unit, a temperature control unit and a mixing bottle, the in-situ vacuum reaction chamber is arranged inside a detection cavity of the electron paramagnetic resonance spectrometer, the gas supply unit is connected to the mixing bottle through a pipeline, and the mixing bottle is connected to a gas inlet of the in-situ vacuum reaction chamber through a pipeline, the vacuum unit is connected to the gas inlet of the in-situ vacuum reaction chamber through a pipeline, the illumination unit is arranged corresponding to a detachable window of the electron paramagnetic resonance spectrometer, and the temperature control unit is connected to the electron paramagnetic resonance spectrometer through a pipeline.

Abstract: Provided are a polarization imaging apparatus, a polarization imaging method, a controller and a computer readable storage medium. The polarization imaging apparatus includes an optical rotation device, a lens device, an image sensor, an image processor, and a controller which are sequentially arranged along a ray direction of incident light. The controller is configured to control the optical rotation device to be in a first optical rotation state or a second optical rotation state, control the lens device to be in an in-focus state or an out-of-focus state, and control the image sensor to collect light passing through the optical rotation device and the lens device to obtain multiple images. The image processor is configured to obtain polarized image information according to the multiple images.

Abstract: A reverse blocking gallium nitride (GaN) high electron mobility transistor includes, sequentially stacked from bottom to top, a substrate, a nucleation layer, a buffer layer, a barrier layer, a dielectric layer. The buffer layer and the barrier layer form a heterojunction structure. The barrier layer is provided with at least two p-GaN structures. The barrier layer is provided with a source metal at one end and a drain metal at the other end, source metal forms ohmic contact and drain metal forms Schottky contact with AlGaN barrier, respectively. In forward conduction, the two-dimensional electron gas below the spaced p-GaN structure connected to the drain metal is conductive, and a turn-on voltage of the device is low. During reverse blocking, the two-dimensional electron gas at the spaced p-GaN structure is rapidly depleted under reverse bias, to form a depletion region, so that the blocking capability of the device is improved.

Abstract: A 1D-CNN-based ((one-dimensional convolutional neural network)-based) distributed optical fiber sensing signal feature learning and classification method is provided, which solves a problem that an existing distributed optical fiber sensing system has poor adaptive ability to a complex and changing environment and consumes time and effort due to adoption of manually extracted distinguishable event features.

Abstract: The present invention provides a method for eddy current thermography defect reconstruction based on electrical impedance tomography, first, obtaining a thermal reference image of temperature change with time by acquiring a thermogram sequence S of the specimen in the process of heating and fitting a curve for pixels of each location of the thermogram sequence S, then, creating a current matrix and a magnetic potential matrix, and calculating the satisfied conductivity distribution through iterations, so as a reconstructed image is obtained, then taking the low conductivity area of the reconstructed image as the defect profile, thus the defect profile is identified and quantified.

Abstract: A power semiconductor device includes a P-type substrate, an N-type well region, a P-type body region, a gate oxide layer, a polysilicon gate, a first oxide layer, a first N+ contact region, a first P+ contact region, drain metal, a first-type doped region, and a gate oxide layer. An end of the P-type body region is flush with or exceeds an end of the polysilicon gate, wherein Cgd of the power semiconductor device is reduced and a switching frequency of the power semiconductor device is increased. A polysilicon field plate connected with a source is introduced over a drift region that is not only shield an influence of the polysilicon gate on the drift region, thereby eliminating Cgd caused by overlapping of traditional polysilicon gate and drift region, but also enable the power semiconductor device to have strong robustness against an hot carrier effect.

Abstract: The present disclosure discloses an adaptive high-precision compression method and system based on a convolutional neural network model, and belongs to the fields of artificial intelligence, computer vision, and image processing. According to the method of the present disclosure, coarse-grained pruning is performed on a neural network model by using a differential evolution algorithm first, and the coarse-grained space is quickly searched through an entropy importance criterion and an objective function with good guidance to obtain a near-optimal neural network structure. Then fine-grained search space is built on the basis of an optimal individual obtained from the coarse-grained search, and fine-grained pruning is performed on the neural network model by a differential evolution algorithm to obtain a network model with an optimal structure. Finally, the performance of the optimal model is restored by using a multi-teacher multi-step knowledge distillation network to reach the precision of an original model.

Abstract: A lateral power semiconductor device includes a first type doping substrate at a bottom of the lateral power semiconductor device, a second type doping drift region, a second type heavy doping drain, a first type doping body; a first type heavy doping body contact and a second type heavy doping source, where dielectric layers are on a right side of the second type heavy doping source; the dielectric layers are arranged at intervals in a longitudinal direction in the first type doping body, and between adjacent dielectric layers in the longitudinal direction is the first type doping body; and a polysilicon is surrounded by the dielectric layer at least on a right side. Compared with conventional trench devices, the lateral power semiconductor device introduces a lateral channel, to increase a current density, thereby realizing a smaller channel on-resistance.