Abstract: An upper limit and a lower limit are preliminarily set for a spectral line width common to a plurality of narrow-band laser devices. When delivered or subjected to maintenance, the narrow-band laser device is caused to laser oscillate to detect its spectral line width before it is used as a light source for semiconductor exposure. A spectral line width adjustment unit provided in the narrow-band laser device is adjusted so that the spectral line width assumes a value between the upper limit and the lower limit. The present invention is able to suppress the variation in spectral line width such as E95 bandwidth caused by machine differences during the manufacture of the laser device, or by replacement or maintenance of the laser device, whereby the quality of integrated circuit patterns formed by the semiconductor exposure tool can be stabilized.

Abstract: An upper limit and a lower limit are preliminarily set for a spectral line width common to a plurality of narrow-band laser devices. When delivered or subjected to maintenance, the narrow-band laser device is caused to laser oscillate to detect its spectral line width before it is used as a light source for semiconductor exposure. A spectral line width adjustment unit provided in the narrow-band laser device is adjusted so that the spectral line width assumes a value between the upper limit and the lower limit. The present invention is able to suppress the variation in spectral line width such as E95 bandwidth caused by machine differences during the manufacture of the laser device, or by replacement or maintenance of the laser device, whereby the quality of integrated circuit patterns formed by the semiconductor exposure tool can be stabilized.

Abstract: In a lamp assembly according to the present invention, a double ended lamp is securely supported in such a way that the one end of said lamp is fixed to a cap or a mirror and the other end of said lamp is fixed to a power supply member. The power supply member located in front of the mirror is made of a metal member of a higher rigidity. A flexible covered wire is secured with an adhesive, so that it may be located outside the periphery of the mirror and a connection portion of the metal member to the covered wire cannot protrude from a contour of the edge of the mirror. Therefore, the lamp assembly can be easily handled. In addition, the inclined bottom surface of a ventilating cutout in a cap ensures that the lamp can be cooled satisfactorily, leading to a long life of the lamp.

Abstract: A method of exposing a peripheral part of the wafer is used for a fine pattern formation process in the processing of ICs, LSIs and other electronic elements, to remove, in a development step, an unnecessary portion of a photoresist coated on a semiconductor substrate, typically a silicon wafer, or a substrate consisting of a dielectric, a metal or an insulator. A peripheral part of the wafer is exposed to light led by an optical fiber light guide. The same area is exposed to light at least twice in a predetermined time interval. The illumination intensity of light in a wavelength range necessary for the first exposure is set to be lower than that for the second and following exposures. In the first exposure, the wafer may be held in a heated state.

Abstract: A method for exposing a peripheral part of a wafer according to the present invention is to expose the peripheral part, taking account of a correcting angle determined by calculating the amount of misalignment between a center of a wafer and a rotational center for the wafer from the amount of displacement of a sensor for detecting a peripheral edge. Therefore, any wafer-centering motion and mechanism are not required, and this method is higher in precision of exposing position.

Abstract: With an exposure apparatus according to the present invention, it is possible to project an image of a mask in a any large number onto a band-shaped film sequentially in a longitudinal direction with high precisions in position, magnification and focus. Thus, the apparatus can be provided for fabrication of an FPC film of a high circuit density.

Abstract: A film circuit substrate exposure apparatus is disclosed, in which members movable along an optical axis such as a reticle support, a projection lens and a film pressing member are mounted on a common linear movement guide by using a linear movement driver, for instance a cross roller guide, in a predetermined spaced-apart relation to one another to set the optical axis and without inclination with respect to the optical axis. The apparatus thus pronounced practical merits such as freedom from rattling, capability of ready positioning and focusing operations, less partial out of focus or aberration of obtainable patterns, and particularly elimination of complicated operations in double side exposure.

Abstract: A method of treating positive photoresist materials applied on a semiconductor wafer placed on a support, which meets the demand for high-speed treatment and improvement in heat-resistance and plasma-resistance of the developed positive photoresist image. The developed positive photoresist image is exposed to radiant lights including ultraviolet rays in an chamber filled with gas in which oxygen and/or moisture are reduced or not included.

Abstract: A method of exposing a peripheral part of wafer is used for a fine pattern formation process in the processing of ICs, LSIs and other electronics elements, to remove, in a development step, an unncessary portion of a photoresist coated on a semiconductor substrate, typically a silicon wafer, or a substrate consisting of a dielectric, a metal or an insulator, from a peripheral part of the substrate.In the method for exposing a peripheral part of wafer, the wafer edge is detected using a sensor, and the light emission end of an optical fiber lightguide is controlled to expose a fixed distance from the edge of wafer according to a signal from the sensor. It is thus possible to expose a peripheral part of wafer having a predetermined width with high accuracy. In addition, the wafer centering mechanism and orientation flat detection/positioning mechanism employed in the prior art are unncessary.

Abstract: Ultraviolet radiation process applies to manufacture semiconductor devices in order to enhance the thermal stability of the developed positive photoresist film on semiconductor wafers.A method, in ultraviolet radiation process, and an apparatus enabling the high-speed and effective treatment of the positive photoresist empolying ultraviolet irradiation by preventing the deformation of the developed positive photoresist image which is caused by the light radiated from a discharge lamp such as high pressure mercury vapor lamp. These method and apparatus employ ultraviolet irradiation, in which ultraviolet rays are applied to the developed positive photoresist image, placed in a chamber filled with gas of lower pressure than 1 atmospheric pressure using a means to intercept or reduce selectively all or part of the wavelengths in the spectral response region of the positive photoresist out of radiant lights obtained from the discharge lamp.

Abstract: Ultraviolet radiation process applied to manufacture semiconductor devices in order to enhance the thermal stability of the photoresist film on semiconductor wafers.A method, in ultraviolet radiation process, enabling effective treatment of the developed positive photoresist image employing ultraviolet irradiation by preventing the deformation of the developed positive photoresist image which is caused by exposing it to high ultraviolet radiation at the beginning of exposure. This method employs ultraviolet irradiation, in which the developed positive photoresist image placed in gas of a lower atmospheric pressure is exposed to ultraviolet radiation of low intensity at the beginning of exposure, and then exposed to ultraviolet radiation, the intensity of which increases little by little or in steps.

Abstract: Ultraviolet radiation process applies to manufacture semiconductor devices in order to enhance the thermal stability of the photoresist film on semiconductors wafers.A method of treating photoresist materials applied in order to enhance the thermal stability of the photoresist film on semiconductor wafer employing heating and ultraviolet irradiation, which meets the demand for improvement in heat resistance and plasma resistance of the photoresists. The initial heating temperature of the photoresist is set to be a little higher than the initial flow temperature, and the temperature of the photoresist is raised in proportion as the flow temperature of the photoresist is increased by exposing the photoresist to ultraviolet radiation and/or heating.

Abstract: Ultraviolet radiation process applicable in the manufacture of semiconductor devices to enhance the thermal stability of a photoresist film on a semiconductor wafer.A method, in ultraviolet radiation process, and an apparatus enabling the high-speed and effective treatment of a photoresist pattern employing ultraviolet irradiation by preventing the deformation of the photoresist which is caused by the light radiated from a discharge lamp such as high pressure mercury vapor lamp. This method and apparatus employ ultraviolet irradiation, in which ultraviolet rays are applied to the photoresist pattern, using a means to intercept or reduce selectively all or part of the wavelengths in the spectral response region of the photoresist out of radiant energy obtained from the discharge lamp.

Abstract: An ultraviolet radiation method of treating positive photoresist materials to enhance the thermal stability of positive photoresist film on a semiconductor wafer employing heating and ultraviolet irradiation. The process improves the heat-resistance and plasma-resistance of the photoresist image. The initial heating temperature of the photoresist is set to be a little higher than the initial flow temperature of the photoresist, and the temperature of the developed positive photoresist image is raised in proportion as the flow temperature of said photoresist image is increased by exposing the photoresist placed in gas of a lower atmospheric pressure to ultraviolet radiation and/or heating.

Abstract: The present invention is for a pulsed laser system in which the total irradiation energy of the laser is controlled by the number of the laser pulses. The invention includes a device for controlling the output of the laser so that the laser oscillation is stopped when the sum of the laser outputs, in response to each pulses, has reached a predetermined level. This device comprises a laser oscillator for outputting a laser beam in response to a repetitive pulse discharge, a photoelectric conversion element, a sample hold circuit and an integrator for sampling and integrating the outputs from the photoelectric conversion elements, and a comparator for comparing the output of the integrator and the output from a reference voltage generator.

Abstract: An apparatus for preventing an optical element of a gas laser from being contaminated by vapor. This apparatus comprises pairs of magnets which apply magnetic fields to charged particles moving in the direction of the optical axis of the gas laser so as to deflect them transversely to the optical axis, and a screen for intercepting charged particles moving transversely to the optical axis of the gas laser.