Abstract: Provided are an improved method and device for modifying a fluororesin. The method for modifying a fluororesin includes: a first step in which a first fluid containing an organic compound including at least one of an oxygen atom and a nitrogen atom is irradiated with ultraviolet light exhibiting intensity in at least a wavelength region of 205 nm or less, and the first fluid that has been irradiated with the ultraviolet light is brought into contact with a fluororesin; and a second step in which a second fluid containing water in the form of gas or mist is irradiated with the ultraviolet light, and the second fluid that has been irradiated with the ultraviolet light is brought into contact with the fluororesin.

Abstract: The pulse width of light from a pulsed light source 1 is stretched by a stretching element 2 such that an elapsed time and the wavelength of the light in the pulsed light correspond to each other on a one-to-one basis, and the stretched light radiates to an object S. The output of a light receiver 4 that has received light from the object S is digitized by an AD converter 6 and the digitized signal is supplied to a calculation means 5. A trigger signal generated by a trigger signal generator 7 in response to the rise of the pulsed light is delayed by a trigger delay section 74 and supplied to the AD converter 6 after the completion of a dead time T3.

Abstract: An optical heating apparatus includes a supporter on which a workpiece is placed and a plurality of light source units each including an LED substrate on which multiple LED elements are mounted. A first main surface of the LED substrate fails to be parallel to a second main surface of the workpiece. Each of the light source units is arranged to satisfy the following formula: 2 tan 2?/cos ??D2/D1, where ? is an angle formed by the first main surface and the second main surface, D1 is a separation distance between a first LED element and the workpiece, D2 is a separation distance between the first LED element and a second LED element, the first LED element being closest to the second main surface in a normal direction thereof, and the second LED element being farthest to the second main surface in the normal direction thereof.

Abstract: A nonlinear element provides a nonlinear effect to light output from a pulsed laser source. Remaining light component having the oscillation wavelength of the pulsed laser source is attenuated when the light is split by a dichroic mirror. The divided light is subjected to pulse stretching by a fiber, and is combined by a multiplexing element. The light thus combined is irradiated to a target object S. The light transmitted through the target object S is received by a photoreceiver. The output signal of the photoreceiver is converted by a calculation unit into a spectrum.

Abstract: Disclosed herein is a work stage for holding an organic substrate and an exposure apparatus using the work stage. The work stage comprises: a base having a recess into which vacuum is supplied; a number of substrate holding sections arranged inside the recess and configured to hold an approximately entire surface of the organic substrate; and an intake hole configured to supply vacuum into the recess and allow the substrate holding sections to vacuum suction the organic substrate on top surfaces of the substrate holding sections.

Abstract: Provided is a surface modification method capable of imparting adhesion to the surface of a base material in a more controllable manner than before without substantially providing irregularities on the surface of the base material. The surface modification method includes: a step (a) of preparing a base material containing an insulating resin material; and a step (b) of irradiating the surface of the base material with ultraviolet light having a wavelength of 200 nm or less, in an atmosphere with an oxygen concentration of 0.01 vol % to 10 vol %, to modify a treatment target region including the surface of the base material, into a microporous layer including voids of nanometer (nm) order size.

Abstract: A laser machining method and a laser machining device according to the present invention include: emitting a beam of laser light in a form of pulse separated from each other; making a plurality of beams of the laser light incident on a light collection optical system that reduces a gap between the beams of the laser light; irradiating the surface to be machined with the plurality of beams of the laser light emitted to form a plurality of focused spots separated from each other, the plurality of focused spots each causing ablation; and moving the light collection optical system and the surface to be machined relative to each other both to simultaneously form a plurality of grooves on the surface to be machined.

Abstract: Provided are a light-emitting gas recovery method and a recovery apparatus that allow light-emitting gas to be recover efficiently. A light-emitting gas recovery method includes: a step (a) of preparing a lamp to be discarded including a tube body filled with the light-emitting gas; a step (b) of placing the lamp in an internal space of a chamber; a step (c) of reducing an air pressure in the internal space of the chamber; a step (d) of applying energy to a part of the tube body to allow an internal space of the tube body and the internal space of the chamber to communicate with each other without entirely breaking the tube body, and releasing the light-emitting gas from the tube body; and a step (e) of discharging a first gas present in the internal space of the chamber toward a recovery mechanism after the step (d).

Abstract: A light source apparatus, in which an energy beam transforms a liquid raw material into plasma to extract radiation, includes a rotation body, a raw material supply section, and a layer thickness adjustment section. The rotation body is disposed at a position onto which the energy beam is incident, and includes a groove overlapping with an incident area of the energy beam. The raw material supply section supplies the groove with the liquid raw material. The layer thickness adjustment section adjusts a layer thickness of the liquid raw material such that a front surface of the liquid raw material forms a concave surface in response to the groove in the incident area of the energy beam.

Abstract: Provided are a light-emitting gas recovery method and a recovery apparatus that allow light-emitting gas to be recover efficiently. A light-emitting gas recovery method includes: a step (a) of preparing a lamp to be discarded including a tube body filled with the light-emitting gas; a step (b) of placing the lamp in an internal space of a chamber; a step (c) of reducing an air pressure in the internal space of the chamber; a step (d) of applying energy to a part of the tube body to allow an internal space of the tube body and the internal space of the chamber to communicate with each other without entirely breaking the tube body, and releasing the light-emitting gas from the tube body; and a step (e) of discharging a first gas present in the internal space of the chamber toward a recovery mechanism after the step (d).

Abstract: Provided is a light source unit in which mounted light-emitting elements are cooled more homogeneously. The light source unit includes: a substrate having a first main surface on which a plurality of light-emitting diodes (LEDs) are mounted; a first through hole that communicates between the first main surface and a second main surface on a side opposite to the first main surface, the first through hole having a center located within a predetermined range from the center of gravity of the first main surface when viewed in a direction orthogonal to the first main surface of the substrate; a heatsink provided on the side of the second main surface of the substrate; and a first fixing screw that is inserted through the first through hole of the substrate and screwed into a screw hole, provided corresponding to the first through hole, to fix the substrate and the heatsink.

Abstract: A photoheating apparatus includes: a light-emitting element substrate on which a plurality of light-emitting elements is mounted on a mounting surface being one main surface; a heat sink provided on a main surface of the light-emitting element substrate on a side opposite to the mounting surface, the heat sink including a plurality of heat absorbing flow paths through which a coolant flows; a flow path structure provided on a side surface of the heat sink opposite to the light-emitting element substrate, the flow path structure including a main body, a supply port through which the coolant flows from an outside to an inside of the main body, and a discharge port through which the coolant is discharged from the inside to the outside of the main body.

Abstract: A fluid treatment device includes an inner tube; an outer tube that is provided so as to surround the inner tube; a discharge space in which a discharge gas is filled in a space sandwiched between the inner tube and the outer tube; a first electrode and a second electrode that are configured to apply a voltage to the discharge space; a flow path that is provided inside the inner tube and through which a treatment target fluid flows. The flow path includes a fluid control part that guides the treatment target fluid so as to approach an inner peripheral wall of the inner tube.

Abstract: An infrared LED element includes: a conductive support substrate; and a semiconductor laminate and includes a material that can be lattice-matched with InP, in which the semiconductor laminate includes: a first semiconductor layer indicating a first conductivity type; an active layer disposed on an upper layer of the first semiconductor layer; a second semiconductor layer disposed on an upper layer of the active layer and indicating a second conductivity type; and a third semiconductor layer disposed on an upper layer of the second semiconductor layer and contains AlaGabIncAs indicating the second conductivity type, the third semiconductor layer has an uneven part on a surface opposite to a side on which the second semiconductor layer is positioned, and the third semiconductor layer has band gap energy lower than band gap energy of the second semiconductor layer and higher than band gap energy of the active layer.

Abstract: To provide a light treatment device that solves a problem caused by deflection of a housing. The light treatment device includes: a light source that irradiates a treatment object conveyed along a conveyance path with ultraviolet light; a housing having the light source therein and having an opening through which the treatment object is carried in or out; and a heat deflection reducer that reduces heat deflection of the housing surrounding the opening.

Abstract: A cell culture chip that enables observation of interactions between cells with a direction without additionally using a driving mechanism is provided. A cell culture chip includes a first culture chamber capable of culturing a cell; a second culture chamber capable of culturing a cell independently from the first culture chamber; a first well connected to the first culture chamber and capable of storing a liquid; a second well connected to the second culture chamber and being capable of storing a liquid; and a connecting portion that, when a liquid level of a first liquid stored in the first well reaches a predetermined height position or higher, allows the first liquid to flow from the first well into the second well.

Abstract: A dielectric barrier plasma generator includes: a dielectric substrate, a high-voltage electrode provided on a first surface of the dielectric substrate, a low-voltage electrode provided to face a second surface of the dielectric substrate, a power introduction section provided at a first end of the high-voltage electrode, a gas channel formed from a first end to a second end thereof between the dielectric substrate and the low-voltage electrode to allow gas to flow from the first end of the gas channel to the second end thereof, and a blowout outlet formed at the second end of the gas channel to blow out the gas that has flown through the gas channel and plasma that has been generated in the gas channel. The dielectric substrate includes a portion having a thickness being thinner when being closer to the blowout outlet.

Abstract: Provided is a fluorine resin surface modification method wherein an object to be processed and a processing device and the like are not readily damaged, wherefrom the risk of harmfully impacting a human body is small, and which can be carried out with simple equipment. The fluorine resin surface modification method including the steps of: irradiating an organic compound containing an oxygen atom with ultraviolet light having at least an intensity in a wavelength range of 205 nm or less to generate a radical; and bringing the radical into contact with a surface of a fluorine resin to form a hydrophilized layer on the surface.

Abstract: A light source unit of the present invention includes: a board, and a plurality of light source areas formed by a plurality of LED elements mounted on the board, wherein each of the light source areas is provided with a plurality of LED element groups connected in parallel, each of the LED element groups being composed of a plurality of the LED elements connected in series, and at least one of the light source areas is a single-wavelength light source area in which all of the LED elements emit light having substantially a same peak wavelength.

Abstract: A semiconductor laser element includes a plurality of three or more laser resonators integrated adjacent to each other in the first direction. Each laser resonator has an independent power supply electrode, a second direction which is regarded as a longitudinal direction, and an end face which is coated. A plurality of electrode pads are formed in a pad region adjacent to the laser region in the first direction. Each of the wirings for connection extends in the first direction and is electrically connected the power supply electrode of the corresponding laser resonator and the corresponding electrode pad. The thick film pad is formed on the pad region and is higher than the multilayered wiring structure of the wirings for connection.