Abstract: A Variable Grain Architecture (VGA) is used for synthesizing from primitive building elements (CBE's) an appropriate amount of dynamic multiplexing capability for each given task. Unused ones of such Configurable Building Elements (CBE's) are reconfigured to carry out further logic functions in place of the dynamic multiplexing functions.

Abstract: A Variable Grain Architecture is disclosed wherein Variable Grain Blocks (VGB's) are wedged together in mirror opposition to one another to define super-VGB structures. The super-VGB structures are arranged as a matrix within an FPGA device. Each VGB includes progressive function synthesizing layers for forming more complex function signals by folding together less complex function signals of preceding layers. A function spawning layer containing a set of function spawning lookup tables (LUT's) is provided near the periphery of the corresponding super-VGB structure. In one case, the function spawning layer is L-shaped and includes a symmetrical distribution of Configurable Building Blocks. A signal-acquiring layer interfaces with adjacent interconnect lines to acquire input terms for the LUT's and controls. A decoding layer is interposed between the signal-acquiring layer and the function spawning layer for providing strapping and intercept functions.

Abstract: This invention provides methods for reducing the mechanical stresses within dielectric layers filling the gaps in shallow trench isolation (STI) regions on semiconductor wafers. The methods include the sequential deposition of alternating layers of dielectric materials having tensile stress and compressive stress, respectively. The invention also provides methods for adjusting the residual stress in a dielectric film by controlling the relative thicknesses of the alternating layers of dielectric material to provide bilayers having minimal overall stress. Additionally, the invention provides semiconductor devices having the reduced stress dielectric materials within the shallow isolation trenches of the semiconductor wafer. The reduction in stress within and between trenches decreases defects in the shallow isolation materials and thereby decreases source-drain and trench-trench short circuiting.

Abstract: A program element for a memory cell formed in a substrate. The element includes a well region of an opposite conductivity type as said substrate formed in the substrate; a first active region formed in the well and having the same conductivity type as said well; and a second active region formed in the well and having a conductivity type opposite to that of the well, and having a junction with said first active region. In a further aspect, the element is used in a memory cell. The memory cell may be implemented in an array of cells to perform a method of creating a reverse breakdown condition in an array of memory cells arranged in columns and rows in the array.

Abstract: Methods of manufacturing insulating materials and semiconductor devices incorporating films having high dielectric constants are disclosed, in which the high-dielectric constant material is deposited on a semiconductor surface that has been treated to prevent the formation of interfacial oxide between the semiconductor substrate and the high, dielectric constant material. The methods of this invention involve implantation of nitrogen ions through the sacrificial oxide layer, thereby forming a nitrided silicon substrate underneath the sacrificial oxide. The sacrificial oxide can then removed, and thereafter layers of high dielectric constant materials can be deposited on the nitrided silicon substrate without the formation of interfacial oxide. Manufacturing devices using the methods of this invention can result in the formation of an overall insulating film having a dielectric constant that more closely reflects the dielectric constant of the high-dielectric constant material.

Abstract: An EEPROM cell is described that is programmed and erased by electron tunneling across an entire portion of separate transistor channels. The EEPROM cell has three transistors formed in a semiconductor substrate. The three transistors are a tunneling transistor (PMOS), a sense transistor (NMOS) and a read transistor (NMOS). Electron tunneling occurs to program the EEPROM cell through a sense tunnel oxide layer having a thickness to allow the electron tunneling across an entire portion of a sense channel upon incurrence of a sufficient voltage potential between a floating gate and the tunnel channel. Electron tunneling also occurs to erase the EEPROM cell through a tunnel oxide layer having a thickness to allow electron tunneling across an entire portion of a tunneling channel upon incurrence of a sufficient voltage potential between the floating gate and the tunneling channel.

Abstract: A Variable Grain Architecture is disclosed wherein Variable Grain Blocks (VGB's) are wedged together in mirror opposition to one another to define super-VGB structures. The super-VGB structures are arranged as a matrix within an FPGA device. Each VGB includes progressive function synthesizing layers for forming more complex function signals by folding together less complex function signals of preceding layers. A function spawning layer containing a set of function spawning lookup tables (LUT's) is provided near the periphery of the corresponding super-VGB structure. In one case, the function spawning layer is L-shaped and includes a symmetrical distribution of Configurable Building Blocks. A signal-acquiring layer interfaces with adjacent interconnect lines to acquire input terms for the LUT's and controls. A decoding layer is interposed between the signal-acquiring layer and the function spawning layer for providing strapping and intercept functions.

Abstract: A circuit for providing a carry operation utilizing 3-input look up tables 502 and 504 and subsequent logic, the circuitry being configurable to provide an adder, a subtractor, an up/down counter, a pre-loadable counter, an accumulator, and a wide gate such as a large AND gate. To provide a carry out Ci+1, a multiplexer 506 has a first input receiving a carry in Ci, a select input coupled to the output of look up table 502, and a second input coupled to the output of look up table 504. The look up tables receive signals representing numbers Ai and Bi to be added or subtracted and ADD/SUB indicating if addition or subtraction is desired. The look up table 502 is programmed to provide Ai(+)Bi, while look up table 504 is programmed to provide Ai*Bi, (+) indicating a Boolean exclusive OR, and * a Boolean AND. With ADD selected, multiplexer 506 provides the carry out Ci+1 of the operation Ai+Bi+Ci.

Abstract: A clock tree topology distributes a clock signal from a single input terminal 400 to three terminals 421-423 with an equal phase delay. The topology includes four lines 401-404 connected together at a first end 450 with adjacent lines forming right angles. A second end of the line 404 forms the clock signal input terminal 400. A second end of the remaining lines 401-403 are connected to first ends of lines 411-413. Second ends of the lines 411-413 form the terminals 421-423. A right angle is formed between each of the lines 401-403 and the respective one of the lines 411-413 to which it connects.

Abstract: An output buffer includes transistors which tolerate a maximum gate to source, gate to drain, or drain to source voltage (“the maximum tolerable voltage”), such as 2.7 volts, the transistors being configured to produce an output voltage significantly higher than the maximum tolerable voltage. The output buffer includes pull up transistors having source to drain paths connected in series to connect a voltage supply higher than the maximum tolerable voltage to the buffer output. The buffer further includes pull down transistors having source to drain paths connected in series to connect the buffer output to ground. The buffer further includes power supply circuitry to apply gate voltages to the pull up and pull down transistors so that the voltage potential from the source to drain of each of the pull up and pull down transistors is less than the maximum tolerable voltage.

Abstract: A Variable Grain Architecture (VGA) device includes a shared output component (SOC) that may be used for programmably-routing process result signals onto either or plural ones of differently directed longlines within an FPGA. Plural VGB's make shared use of each SOC to output respective function signals to the longlines. The SOC may be also used for programmably-routing signals (e.g., feedthrough signals) that are selectively acquired from either one of equivalent but differently positioned interconnect channels. Such freedom in routing VGB result signals or feedthrough signals can allow FPGA configuring software to explore a wider range of partitioning, placement and/or routing options for finding optimized implementations in the VGA FPGA device of various, supplied design specifications.

Abstract: A PLD circuit configuration is provided to use less product term lines than a typical PLD to perform an OR operation without using an OR gate. In one embodiment, an inverter is provided between the output of one product term line and the input of an OR gate. The inverter enables the one product term provided to it to provide an OR operation. This is because when two or more elements are ANDed in a product term, inverting the product term creates an OR operation with the elements inverted. With an OR operation provided using a single product term and inverter, less product term lines are needed when performing some operations. In another embodiment, an OR gate output is provided to the first input of a look up table (LUT), while a single product term line is provided to a second input of the LUT. The LUT can be programmably configured to perform a number of Boolean logic functions, such as an OR gate, an XOR gate, etc.

Abstract: A non-volatile memory cell, comprising a semiconductor substrate having a first conductivity type. A control region is formed of said first conductivity type in the substrate and a control region oxide formed over the control region. The cell includes a program element having a first active region of a second conductivity type formed in said substrate, a doped or implanted region adjacent to said first active region, and a gate oxide overlying at least the channel region. An active region oxide covers a portion of the first active region. A floating gate is formed over said semiconductor substrate on said active region oxide and said control region oxide.

Abstract: This invention provides methods for reducing the mechanical stresses within dielectric layers filling the gaps in shallow trench isolation (STI) regions on semiconductor wafers. The methods include the sequential deposition of alternating layers of dielectric materials having tensile stress and compressive stress, respectively. The invention also provides methods for adjusting the residual stress in a dielectric film by controlling the relative thicknesses of the alternating layers of dielectric material to provide bilayers having minimal overall stress. Additionally, the invention provides semiconductor devices having the reduced stress dielectric materials within the shallow isolation trenches of the semiconductor wafer. The reduction in stress within and between trenches decreases defects in the shallow isolation materials and thereby decreases source-drain and trench—trench short circuiting.

Abstract: A two transistor EEPROM cell is described that is erased by electron tunneling across an entire portion of a tunneling channel and programmed by electron tunneling at an edge of a tunneling drain.

Abstract: A non-volatile memory cell structure comprises a floating gate, a reverse breakdown injection element at least partially formed in a polysilicon layer and operatively coupled to the floating gate, and a transistor at least partially formed in a region of a semiconductor substrate, operatively coupled to the floating gate. In a further aspect, a control gate is capacitively coupled to the floating gate and is formed in said polysilicon layer. The reverse breakdown electron injection element comprises a first, second, and third active regions, the first and second regions comprising a first p/n junction, the second and third active regions comprising a second p/n junction.

Abstract: An EEPROM cell is described that is programmed and erased by electron tunneling at separate regions, an edge of a tunneling drain and a sense transistor channel. The EEPROM cell has three transistors formed in a semiconductor substrate. The three transistors are a tunneling transistor (NMOS), a sense transistor (NMOS) and a read transistor (NMOS). Electron tunneling occurs to program the EEPROM cell through a sense tunnel oxide layer by electron tunneling across an entire portion of a sense channel upon incurrence of a sufficient voltage potential between a floating gate and the sense channel. Electron tunneling also occurs to erase the EEPROM cell through a tunnel oxide layer be electron tunneling at an edge of a tunneling drain upon incurrence of a sufficient voltage potential between the floating gate and the tunneling drain.

Abstract: A Variable Grain Architecture (VGA) includes a shared output component (SOC) that may be used for outputting different signals onto a shared longline within an FPGA. Plural VGB's make shared use of the SOC to out respective function signals to the shared longline.

Abstract: With the present invention, a filled isolation trench is fabricated as part of an integrated circuit on a semiconductor wafer using nitrogen implantation into at least one side wall of the isolation trench. An isolation trench is etched within a layer of semiconductor material. The isolation trench has at least one side wall comprised of the semiconductor material, and the isolation trench has a bottom wall. Nitrogen ions are implanted into the at least one side wall of the isolation trench. A layer of an insulator material is thermally grown from the at least one side wall and the bottom wall of the isolation trench. The isolation trench is then filled with the insulator material using a deposition process to form the filled isolation trench. With the present invention, the nitrogen ions implanted into the at least one side wall of the isolation trench reduce a radius of a bird's beak formed on the at least one side wall of the isolation trench.

Abstract: An integrated capacitor structure includes first and second, conductive semiconductor portions spaced apart from one another where the first and second semiconductor portions are both of a same conductivity type (both N or both P). The integrated capacitor structure may be formed using same processes as are used for fabricating gate insulator and gate electrode parts of neighboring MOS transistors in a same integrated circuit.