Abstract: A method for correcting pixel information of color pixels on a color filter array of an image sensor includes: establishing an M×M distance factor table, selecting M×M pixels of the color filter array, calculating a red/green/blue-color contribution from the red/green/blue pixels to a target pixel in the selected M×M pixels, calculating a red/blue/green-color pixel performance of the target pixel, calculating a red/blue/green-color correcting factor, obtaining a corrected pixel information of each of the red/green/blue pixels, by applying the red/green/blue-color correcting factor to the measured pixel information of each of the red/green/blue pixels.

Abstract: The invention provides an image sensor device. The image sensor device includes a chip package and an opaque coating. The chip package includes an image sensor array chip, wherein a set of optical elements connect to the image sensor array chip, and an outer frame shielding the optical elements. The opaque coating overlies the outer frame.

Abstract: A solid-state imaging device is provided. The solid-state imaging device includes a semiconductor substrate containing a plurality of image sensors. A color filter including a plurality of color filter segments is disposed above the semiconductor substrate. Each of the color filter segments corresponds to one of the image sensors. Further, a plurality of partitions is disposed between the color filter segments. Each of the partitions is disposed between any two adjacent color filter segments. The partition has a height smaller than the height of the color filter segment, wherein the height of the partition is based on the bottom of the color filter segment to the top of the partition, and the height of the color filter segment is based on the bottom of the color filter segment to the top of the color filter segment.

Abstract: Image capture lens modules and wafer level packaged image capture devices are presented. The image capture lens module includes a compound lens with a first lens element and a second lens element molded on both sides of a substrate, and a field stop disposed at an interface between the first lens element and the substrate or at an interface between the second lens element and the substrate, wherein the field stop is a coating layer with a polygonal transparent area.

Abstract: The invention provides a light emitting semiconductor structure, which includes a substrate; a first LED chip formed on the substrate; an adhesion layer formed on the first LED chip; and a second light emitting diode chip formed on the adhesion layer, wherein the second LED chip has a first conductive wire which is electrically connected to the substrate.

Abstract: A method for correcting pixel information of color pixels on a color filter array of an image sensor includes: establishing an M×M distance factor table, selecting M×M pixels of the color filter array, calculating a red/green/blue-color contribution from the red/green/blue pixels to a target pixel in the selected M×M pixels, calculating a red/blue/green-color pixel performance of the target pixel, calculating a red/blue/green-color correcting factor, obtaining a corrected pixel information of each of the red/green/blue pixels, by applying the red/green/blue-color correcting factor to the measured pixel information of each of the red/green/blue pixels.

Abstract: An image sensor for light field devices includes a plurality of sub-microlenses, a space layer, and a plurality of main microlenses. The space layer is disposed on the sub-microlenses, and the main microlenses are disposed on the space layer. The diameter of each of the main microlenses exceeds that of each of the sub-microlenses.

Abstract: The invention provides a light emitting semiconductor structure, which includes a substrate; a first LED chip formed on the substrate; an adhesion layer formed on the first LED chip; and a second light emitting diode chip formed on the adhesion layer, wherein the second LED chip has a first conductive wire which is electrically connected to the substrate.

Abstract: A method for fabricating a color filter structure includes: providing a base layer; forming a first colored layer on the base layer; patterning the first colored layer to form a pair of first colored patterns, a first opening between the first colored patterns, and a second opening adjacent to the first colored patterns; forming a first dielectric layer on the first colored patterns and the base layer exposed by the first and second openings; forming a second colored layer on the first colored patterns and the first dielectric layer; patterning the second colored layer to form a second colored pattern in the first opening; forming a second dielectric layer on the first dielectric layer and the second colored pattern; forming a third colored layer on the second dielectric layer; and patterning the third colored layer to form a third colored pattern in the second opening.

Abstract: A method for forming a lens assembly is provided, including: providing a mold substrate, wherein at least a recess is formed from a surface of the mold substrate; providing a transparent substrate; disposing a lens precursor material on the surface of the mold substrate or on a first surface of the transparent substrate; disposing the mold substrate on the transparent substrate such that at least a portion of the lens precursor material is filled in the recess; disposing a mask on a second surface of the transparent substrate to partially cover the transparent substrate; after the mask is disposed, irradiating a light on the second surface of the transparent substrate to transform at least a portion of the lens precursor material on the first surface of the transparent substrate into a lens; and removing the mask and the mold substrate from the transparent substrate and the lens.

Abstract: A method for forming an image sensor device is provided. First, a lens is provided and a first sacrificial element is formed thereon. An electromagnetic interference layer is formed on the lens and the first sacrificial element, and the first sacrificial element and electromagnetic interference layer thereon are removed to form an electromagnetic interference pattern having an opening exposing a selected portion of the lens. A second sacrificial element is formed in the opening to cover a center region of the selected portion of the lens. A peripheral region of the selected portion of the lens remains exposed. A light-shielding layer is formed on the electromagnetic interference pattern, second sacrificial element, and peripheral region of the selected portion of the lens. The second sacrificial element and light-shielding pattern are removed to expose the center region of the selected portion of the lens as a light transmitting region.

Abstract: A method and system for facilitating focusing of a camera module are disclosed. The camera module includes an image sensor, a lens cube, a barrel and an adjustable member. An adjustable member can be configured to fine-tune the focal length with respect to an image sensor, so that a lens cube with a shorter or longer focal length can be corrected and integrated into the camera module.

Abstract: Disclosed is a method for forming an image sensor device. First, a lens is provided, and a first sacrificial element is then formed on the lens. Subsequently, an electromagnetic interference layer is formed on the lens and the first sacrificial element, and the first sacrificial element and the electromagnetic interference layer thereon are removed to form an electromagnetic interference pattern having an opening exposing a selected portion of the lens. A second sacrificial element is formed in the opening to cover a center region of the selected portion of the lens, while a peripheral region of the selected portion of the lens remains exposed. Next, a light-shielding layer is formed on the electromagnetic interference pattern, the second sacrificial element, and the peripheral region of the selected portion of the lens. Thereafter, the second sacrificial element and the light-shielding pattern thereon are removed to expose the center region of the selected portion of the lens as a light transmitting region.

Abstract: A wafer level image module includes a photo sensor for outputting an electrical signal upon receiving light, a lens set for focusing incident light onto the photo sensor, and an adjustment member disposed between the photo sensor and the lens set for controlling the distance between the photo sensor and the lens set to compensate the focus offset of the photo sensor for enabling the lens set to accurately focus the incident light onto the photo sensor in an in-focus manner so as to provide a high image quality.

Abstract: A light-emitting diode package is provided. The light-emitting diode package comprises a substrate and a first metal layer disposed over the substrate. A solder layer is disposed on the first metal layer and a light-emitting diode chip is disposed on the solder layer, wherein the light-emitting diode chip comprises a conductive substrate and a multilayered epitaxial structure formed on the conductive substrate, and wherein the conductive substrate is adjacent to the solder layer.

Abstract: A chip package and a fabrication method thereof are provided. The chip package includes a substrate and a chip disposed over the substrate. A solder layer is disposed between the chip and the substrate. A conductive pad is disposed between the solder layer and the substrate, wherein the conductive pad includes a first portion disposed under the solder layer, a second portion disposed away from the first portion and a connective portion disposed between the first portion and the second portion. The connective portion has a width which is narrower than a width of the first portion along a first direction perpendicular to a second direction extending from the first portion to the connective portion.

Abstract: An optical element and image capture lens structure. The optical element includes a substrate and an optical component with at least one effective area and non-effective area, formed on the substrate, wherein the non-effective area has a rough surface. The image capture lens structure includes a substrate, an optical component formed on the substrate, and a spacer with a micro structure, attached to the substrate by an adhesive, wherein the micro structure is located between the adhesive and the optical component to prevent the overflow of the adhesive.

Abstract: An optical lens module is provided, including a first lens, a second lens, a third lens, and an aperture stop formed in the first lens by wafer level processing. The first lens, the second lens, and the third lens are sequentially arranged from an object side to an image side along an optical axis of the optical lens module. The first lens has a convex surface and a concave surface, respectively, on an object side and an image side. The second lens has a concave surface and a convex surface, respectively, on the object side and the image side. The third lens has a convex peripheral portion on the image side, wherein the convex peripheral portion forms a surface with a concave center on the image side, and the surface has an inflection point.

Abstract: The invention provides a method for fabricating a camera module. An exemplary embodiment of the method for fabricating a camera module comprises providing plurality of lens sets. A dry film layer is formed on the plurality of lens sets. The dry film layer is patterned to form a plurality of dry film patterns respectively attaching to a plurality of lens sets. The plurality of lens sets are separated. A lens set separated from the plurality of lens sets is bonded to an image sensor device chip. The dry film pattern on the lens set is removed.

Abstract: An image sensor is provided. The image sensor includes a pixel sensor, a color filter array comprising a plurality of color filters formed on the pixel sensor, wherein two adjacent color filters have a gap therebetween, and a gapless microlens array comprising a plurality of microlenses formed on the color filter array. The invention also provides a method for fabricating the image sensor.