Abstract: A multi-processor system for multidimensional image signal processing includes a plurality of co-processors and a host processor which issues processor numbers and a command to the co-processors through a bus. Due to the multi-dimensional nature of the processor numbers, data processing for given ranges of an image signal can be shared by the co-processors. A particular multi-dimensional processor number issued by the host computer which allows simultaneous communication to be performed between the host processor and the co-processors.

Abstract: A single-chip microcomputer includes a microprocessor, a subprocessor for performing peripheral functions, an external port for controlling an input/output operation from/to an external device and a multi-functional logic-in-memory for inputting a plurality of data from at least one of the microprocessor, the subprocessor and the external port and selecting write data from among the plurality of data in accordance with predetermined priorities.

Abstract: In a parallel computer, in order to reduce the overhead of data transmissions between the processes, a data transmission from the virtual space of a process in a certain cluster to the virtual space of a process in other cluster is executed without copying the data to the buffer provided within the operating system. The real communication area resident in the real memory is provided in a part of the virtual space of the process, and an identifier unique within the cluster is given to the communication area. When the transmission process has issued a transmission instruction at the time of data transmission, the cluster address of the cluster in which the transmission destination process exists and the identifier of the communication area are determined based on the name of the transmission destination process. Then, the data is directly transmitted between the mutual real communication areas of the transmission originating process and the transmission destination process.

Abstract: A voltage limiter circuit is disposed in a semiconductor IC chip in order to reduce an operating voltage of an internal circuit of a scaled-down element. A small capacitance of a Vcc wiring by the disposition constitutes a resonance circuit together with an inductance of the Vcc wiring. Resonance at the resonance circuit causes large variation of a supply current and noise. An additional capacitance is connected between the Vcc wiring and a Vss wiring in order to suppress the variation and noise. The capacitance is formed by a PN junction and is connected in series to a damping resistance.

Abstract: Practical structures of an ultra large scale semiconductor integrated (ULSI) circuit especially a dynamic random access memory of 16M bits or more are involved. The ULSI circuit uses internal operating voltages and how to construct a reference voltage generating circuit and a voltage limiter circuit in the ULSI circuit is a matter of importance. The operation of the reference voltage generating circuit and voltage limiter circuit can be stabilized, characteristics of these circuits are improved, and layout of these circuits as applied to memory cell array, peripheral circuits and the like can be improved. Improved methods of testing these circuits are provided.

Abstract: A field effect transistor and a ballistic transistor using semiconductor whiskers each having a desired diameter and formed at s desired location, a semiconductor vacuum microelectronic device using the same as electron emitting materials, a light emitting device using the same as quantum wires and the like are disclosed.

Abstract: A semiconductor integrated circuit is disclosed, in which a group of sense amplifiers activated at the same time by a selection signal on a selection signal line are divided into a plurality of blocks, and a power-source line for driving sense amplifiers is formed for each sense amplifier block so as to cross the selection signal line. Alternatively, an input/output line is divided into a plurality of sub-input/output lines, and a plurality of input/output lines are formed so that each input/output line crosses its sub-input/output lines, to form a hierarchical structure with respect to input/output lines. Thus, the load capacitance of each power-source line is reduced, and the time constant of each of the charging and discharging of the load capacitance is decreased. That is, the above semiconductor integrated circuit can operate at high speed.

Abstract: There is disclosed a pipelined A/D converter including a plurality of A/D-D/A sub-blocks and one A/D sub-block successively connected in cascade form to determine a conversion output by several partial bits beginning from the most significant bit. Each of A/D-D/A sub-blocks includes a sample-and-hold circuit for successively sampling and holding an input analog signal fed to the sub-block, a partial A/D converter for performing A/D conversion on a hold output of this sample-and-hold circuit, a latch circuit for latching outputs of the partial A/D converter, a D/A converter for inversely converting outputs of the latch circuit to an analog signal, and a chopper amplifier for sampling the hold output of the sample-and-hold circuit with a delay of half a period, amplifying a difference between the sampled value and the inverse conversion output of the D/A converter during a succeeding interval of amplify mode, and outputting the amplified difference to a sub-block of a succeeding stage as a conversion residue.

Abstract: A silicone resin is applied on a substrate to form a coating film. The coating film is subjected to a reactive ion etching in an atmosphere containing at least O.sub.2. Thus, the film is inorganized in its surface and has a distribution of the residue, an organic radical, contained therein gradually increasing in the depth thereof. This permits an insulating film having excellent heat endurance to be formed without generation of any cracks. This insulating film is very useful as an interlayer insulating film for multi-layer wiring.

Abstract: The present invention is intended to operate a semiconductor device at high speed with low voltage. A circuit configuration is used in which the transfer impedance between a common I/O line and a data line is changed depending on whether information is to be read or written. A current/voltage converter is provided which includes a MISFET different in conduction type to a select MISFET. Thus, the speed of reading information is increased. An intermediate voltage generator having high driving capability is provided. Thus, the circuit has sufficient driving capability for an LSI having large load capacitance. A voltage converter is provided which converts a data line supply voltage or word line supply voltage to a higher voltage. Therefore, stabilized signal transmission is ensured.

Abstract: In a semiconductor memory, switch circuits are provided so as to inhibit voltage and signal supplies to each of the normal memory blocks when so required. On the other hand, a ROM is provided on the chip so as to store the address of a defective memory block which consumes an excessively large stand-by current when the semiconductor memory is in the stand-by mode. The switch circuits are controlled by the output of the ROM so as to inhibit the voltage and signal supply to the defective memory block. Then, a spare memory block which is substituted for the defective normal memory block receives the voltage and signal supply.

Abstract: Disclosed is a one-chip ULSI which can carry out the fixed operation in a wide range of power supply voltage (1 V to 5.5 V). This one-chip ULSI is composed of a voltage converter circuit(s) which serves to a fixed internal voltage for a wide range of power supply voltage, an input/output buffer which can be adapted to several input/output levels, a dynamid RAM(s) which can operate at a power supply voltage of 2 V or less, etc. This one-chip ULSI can be applied to compact and portable electronic devices such as a lap-top type personal computer, an electronic pocket note book, a solid-state camera, etc.

Abstract: Practical structures of an ultra large scale semiconductor integrated (ULSI) circuit especially a dynamic random access memory of 16M bits or more are involved. The ULSI circuit uses internal operating voltages and how to construct a reference voltage generating circuit and a voltage limiter circuit in the ULSI circuit is a matter of importance. The operation of the reference voltage generating circuit and voltage limiter circuit can be stabilized, characteristics of these circuits are improved, and layout of these circuits as applied to memory cell array, peripheral circuits and the like can be improved. Improved methods of testing these circuits are provided.

Abstract: A multi-layer leadframe according to this invention is formed by laminating on a leadframe body an insulating layer and an electrically conductive layer in this order. The electrically conductive plate includes a planar portion and a given number of terminal portions extending therefrom, said planar portion extending across said insulating layer laminated on said leadframe body. The planar portion is made thinner than the terminal portions. A thin portion of this planar portion is formed by an etching technique, and at least a part of the terminal portions of the electrically conductive plate is fixedly connected with an inner lead of the leadframe body.

Abstract: A packaged semiconductor device has a package, a semiconductor IC chip disposed in a space formed in the package, a strip conductor buried at a first level in the package for carrying a signal to be coupled to the IC chip, a first reference potential conductor buried at a second level in the package for providing a reference potential for the IC chip and a second reference potential conductor buried at the first level in the package for shielding the strip conductor. A connection conductor such as a bonding wire is provided across the second reference potential conductor for connecting the IC chip with one of the ends of the strip conductor. A dielectric material is provided between the connection conductor and the second reference potential conductor to provide the connection conductor with a characteristic impedance matched with an impedance of a source of the signal the connection conductor carries.

Abstract: A resistor-string divided into plural sets of unit-resistors generates plural reference voltages for the upper bits, while each divided set generates plural reference voltages for the lower bits. A first and second differential input are generated in direct and inverse proportion to the analog input voltage. Differential comparators for the upper bits compare two differential voltages from between the two reference voltages and the first and second differential input votlages. Two of the divided sets are selected according to the upper bit digital value and one reference voltage from each selected set is switched to a differential comparator for the lower order bits. Lower order bit comparison is similar to the high order comparison described above. Final digital value is obtained by linking the upper and lower bits digital value.

Abstract: A switching system exchanges communication information as fixed length cells between a plurality of incoming and outgoing highways. The fixed length cells each have a plurality of data portions with one data portion designated as a header portion for containing switching information. An address generating circuit generates read addresses and write addresses in response to the header portion of each cell and a control circuit. The plurality of cells from the incoming highways are simultaneously rotated in a rotation matrix with each of the cell's data portions rotated to a unique internal path. The data portions are then transmitted to identical write addresses in a plurality of memories via delay circuitry. The write addresses are transmitted through shift registers to the plurality of memories to allow the data portions of a single cell to occupy identical addresses within a plurality of memories.

Abstract: Practical structures of an ultra large scale semiconductor integrated (ULSI) circuit especially a dynamic random access memory of 16 M bits or more are involved. The ULSI circuit uses internal operating voltages and how to construct a reference voltage generating circuit and a voltage limiter circuit in the ULSI circuit is a matter of importance. The operation of the reference voltage generating circuit and voltage limiter circuit can be stabilized, characteristics of these circuits are improved, and layout of these circuits as applied to memory cell array, peripheral circuits and the like can be improved. Improved methods of testing these circuits are provided.

Abstract: In a cell delineation circuit, an input signal is converted into parallel signals, and a plurality of parallel signals (i.e. series of parallel signals) which are shifted one bit by one bit from each other are formed from those parallel signals. CRC (Cyclic Redundancy Check) calculations are executed in parallel for the plurality of parallel signals. A series in which a pattern to be calculated satisfies a CRC rule is determined from results of the CRC calculations, and this series is generated, thereby establishing a cell delineation.

Abstract: The entry of a problem describing program is assisted by a database or a display screen. An error in numerical calculation of the input problem describing program is automatically checked. A simulation program which interrupts the execution of a process requsted by a statement in the problem describing program which a user designates as a break point when the simulation program executes the process is automatically generated. At the time of interruption, the execution status of the simulation is diagnosed upon the user's request.