Abstract: The present invention relates to measuring devices used in measuring angular velocity and, more specifically, to oscillating micro-mechanical sensors of angular velocity. In the sensors of angular velocity according to the present invention, at least one pair of electrodes is provided in association with an edge of a seismic mass (1), (9), (10), (20), (30), (31), which pair of electrodes together with the surface of the mass (1), (9), (10), (20), (30), (31) form two capacitances such, that one of the capacitances of the pair of electrodes will increase and the other capacitance of the pair of electrodes will decrease as a function of the angle of rotation in the primary motion of the mass (1), (9), (10), (20), (30), (31). The structure of a sensor of angular velocity according to the present invention enables reliable and efficient measuring particularly in solutions for compact oscillating micro-mechanical sensors of angular velocity.

Abstract: A method of manufacturing a sensor including forming an insulating layer on top of a conductive substrate, and forming a conducting electrode on top of the insulating layer. Further, the insulating layer is formed to include support areas formed at edges of the conducting electrode and a partial area formed under the conducting electrode, and a thickness (d2) of the partial area of the insulating layer is less than a thickness (d1) of the support areas of the insulating area.

Abstract: The invention relates to measuring devices for the measuring of pressure, and more specifically to capacitive pressure sensors. The silicon crystal planes {111} are located at the corners of a wet etched membrane well of a pressure sensor element according to the present invention. An object of the invention is to provide an improved method of manufacturing a capacitive pressure sensor, and a capacitive pressure sensor suitable for use, in particular, in small capacitive pressure sensor solutions.

Abstract: The invention relates to a method for manufacturing a silicon sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring element configuration (7). According to the invention, the openings and trenches (8) extending through the depth of the silicon wafer are fabricated by dry etch methods, and the etch process used for controlling the spring constant of the spring element configuration (7) is based on wet etch methods.

Abstract: The invention relates to measuring devices used for the measuring of acceleration, and specifically to capacitive acceleration sensors. The capacitive acceleration sensor according to the present invention comprises a pair of electrodes composed of a movable electrode (4) and a stationary electrode (5), and, related to the pair of electrodes, an isolator protrusion having a special coating. The invention provides an improved, more durable sensor structure, which withstands wear caused by overload situations better than earlier structures.

Abstract: This publication discloses a method for creating a sensor construction. According to the method, on top of a conducting substrate (2), an insulating layer (5) is formed and connected to the micromechanical construction. According to the invention, the insulating layer (5) is formed to be thicker (14) in the support area (16) than in the other areas, or thinner (13) in the area of the electrode (8) than in the support area (16) of the sensor.