Abstract: A thermally conductive composition includes a component (A) that is a diorganopolysiloxane having an alkenyl group bonded to a silicon atom, a component (B) that is a diorganopolysiloxane having a hydrogen atom bonded to a silicon atom, a component (C) that is expandable graphite, a component (D) that is a thermally conductive filler, a component (E) that is an addition reaction catalyst, an organosilicon compound or an organosiloxane (also referred to as a silane coupling agent) that produces silanols by hydrolysis, and a condensation catalyst. The expansion rate (volume after high temperature exposure/volume before high temperature exposure) of a thermally conductive member obtained by curing the thermally conductive composition is 1.1 or less.

Abstract: Provided is a thermally conductive insulating silicone composition that has favorable thermal conductivity and dispensing properties, has favorable resiliency after curing, and can secure adhesion even under application of impact. Also provided is a method for manufacturing such a thermally conductive insulating silicone composition. The thermally conductive silicone composition is applied in a liquid state to a substrate, and contains: (A) a diorganopolysiloxane having an alkenyl group bonded to a silicon atom; (B) a diorganopolysiloxane having a hydrogen atom bonded to a silicon atom; (C) a thermally conductive filler; (D) a silicone resin having at least one alkenyl group within one molecule, with a number-average molecular weight of 1,000 or more; and (E) an addition reaction catalyst.

Abstract: The invention relates to a 3D printing method for the layer-by-layer fabrication of objects using laser transfer printing, and to a 3D printing device for carrying out the method. According to the method, a printing compound (54) applied to a carrier cylinder (51) is irradiated with a laser (50), detached, and transferred to a base plate (27). The resulting printing compound layers are subsequently cured and the process repeated until the object is completely built up. Using said claimed method, objects can be printed from a variety of possible printing materials with high throughput (over 1 kg/h) without affecting the print quality.

Abstract: Stable preparations of composite particles based on organic polymer and inorganic particles contain, as the organic polymer, an addition polymer containing moieties derived from polymerization of an unsaturated carboxylic acid in addition to vinyl ester, (meth)acrylic ester, olefin, vinyl aromatic, and/or vinyl halide monomers.

Abstract: A process for preparing trimethylchlorosilane (M3) and methyltrichlorosilane (M1) by disproportionation of dimethyldichlorosilane (M2) in the presence of an Al2O3 catalyst is described herein. The dimethyldichlorosilane used is in the form of a silane mixture that includes 80-100% by weight of dimethyldichlorosilane (M2). The difference in content from 100% by weight includes M1 and M3.

Abstract: A method of automatic packing of comminuted silicon includes providing an inner bag in a first shaping vessel, spreading out an opening of the inner bag and positioning the opening above a lip of a first filling funnel of a filling unit, and filling the inner bag with comminuted silicon. The comminuted silicon passes through the filling funnel into the inner bag. The inner bag is welded in a welding unit. The opening of the inner bag is folded together by inward folding of two opposite inner bag sides such that two inner bag edges formed by the folding-together are opposite and parallel to one another and form a fold with a channel. A vacuum welder is applied to the fold and welds the inner bag. The inner bag is transferred into an outer bag. The outer bag is welded.

Abstract: A method for producing polycrystalline silicon includes introducing a reaction gas, which in addition to hydrogen contains silane and/or at least one halosilane, into a reaction space of a gas phase deposition reactor. The reaction space includes at least one heated filament rod upon which by deposition silicon is deposited to form a polycrystalline silicon rod. During the deposition, the the morphology of the silicon rod is determined.

Abstract: A method for preparing isocyanatoalkylalkoxysilanes (S—I) of the general formula (6). Where in a first method step haloalkylalkoxysilane (S—H) of the general formula (7) is reacted with a metal cyanate (MOCN) and an alcohol (A) of the general formula (8), to form a carbamatoalkylalkoxysilane (S—C) of the general formula (9). In a second method step the carbamatoalkylalkoxysilane (S—C) is purified by distillation and in a third method step the isocyanatoalkylalkoxysilane (S—I) is generated from the silane (S—C) by a thermolytic alcohol elimination.

Abstract: A crosslinkable stabilized composition for a nonwoven substrate includes an aqueous dispersion of vinyl acetate-ethylene copolymers, a polyvinyl alcohol dispersion stabilizer, and a copolymer comprising maleic anhydride units or a copolymer comprising maleic acid units. The composition exhibits a free formaldehyde content of 5 ppm or less.

Abstract: Methods and devices for sorting silicon fragments. The method includes the steps of singulating the chunks in a singulating region and recording the projected area of a chunk in a 2D profile plane with at least one first measuring device. Recording at least one height information item above and/or below the 2D profile plane with at least one further measuring device. Calculating the size of the chunk from the projected area and the height information item and controlling at least one deflecting device as a function of the calculated size.

Abstract: A process for preparing multistage copolymers in the form of aqueous dispersions by multistage, radically initiated emulsion polymerization includes a first stage, second stage, and third stage. In the first stage, 20% to 75% by weight of vinyl acetate, optionally ethylene and optionally one or more further ethylenically unsaturated monomers are polymerized. In the second stage, in the presence of the polymer from the first stage, 1% to 25% by weight of vinyl acetate, 0.01% to 2% by weight of one or more ethylenically unsaturated silicon-functional monomers and optionally one or more further ethylenically unsaturated monomers are polymerized. In the third stage, in the presence of the polymer from the second stage, 5% to 40% by weight of one or more monomers selected from the group encompassing esters of acrylic acid, esters of methacrylic acid and vinyl aromatics and optionally one or more further ethylenically unsaturated monomers are polymerized.

Abstract: Nonwoven fiber webs are produced by spraying one or more aqueous binder formulations containing one or more polymers selected from the group of vinyl ester polymers and (meth)acrylic ester polymers, and in a separate step, spraying one or more aqueous silicone formulations containing one or more polysiloxanes, onto the surface of an airlaid nonwoven.

Abstract: A process for dehydrogenating and methylating silanes. The process includes providing methyl chloride that is reacted with a silane selected from the group consisting of SiH4, H2SiMe2, H2SiMeCl, H3SiMe, H3SiCl and HSiMe2Cl, in the presence of at least one ammonium and/or phosphonium salt at a temperature in the range of 70-350° C.

Abstract: A crosslinkable, heat-conducting silicone composition along with processes for producing and uses for the same. Where the composition includes 5-50% by volume of a crosslinkable silicone composition (S) and 50-95% by volume of at least one thermally conductive filler (Z) having a thermal conductivity of at least 5 W/mK. Where the crosslinkable heat-conducting silicone composition has a thermal conductivity of at least 0.6 W/mK and at least 20% by volume of metallic aluminum particles present as thermally conductive fillers (Z).

Abstract: A method for converting organosilanes by reacting at least one silane (1) of the general formula RaSiCl4-a??(I) with at least one further silane (2) of the general formula RbSiCl4-b??(II) wherein silane (2) is identical or different from silane (1), optionally with additional use of silanes (3) which contain Si-bonded hydrogen and have the formula RdHeSiCl4-d-e??(III) in the presence of aluminum salts, preferably aluminum halides, as catalysts and in the presence of cocatalysts, to obtain at least one silane (4) which differs from silanes (1) and (2) and has the general formula RcSiCl4-c??(IV).

Abstract: A process for producing etched silicon-containing materials includes a first step and a second step. In the first step, silicon is deposited in the pores and on the surface of porous particles by way of thermal decomposition of silicon precursors on the porous particles, forming silicon-containing materials. In the second step, some of the deposited silicon of the silicon-containing materials is removed by etching-off.

Abstract: A hydrosilylation curable mixture whose cured products have high mechanical damping include a cyclosiloxane bearing aliphatic unsaturation and a coupler having both silicon-bonded hydrogen and at least one aromatic group.

Abstract: The present disclosure relates to a process for producing chlorosilanes in a fluidized bed reactor by reacting a hydrogen chloride-containing reaction gas with a particulate contact mass containing silicon and optionally a catalyst. The chlorosilanes have the general formula HnSiCl4-n and/or HmCl6-mSi2. The reactor design is described by an index K1, the constitution of the contact mass without catalyst is described by an index K2uncat, the constitution of the contact mass with catalyst is described by an index K2cat, and the reaction conditions are described by an index K3.

Abstract: Method for producing polycrystalline silicon by inducing reaction gas, which in addition to hydrogen contains silane and/or at least one halosilane, into a reaction space of a vapour deposition reactor. The reaction space comprises at least one filament rod heated by the passage of current and on which by means of deposition silicon is deposited to form a polycrystalline silicon rod. A determination of morphology of the silicon rod during deposition at a rod temperature a first resistance R1 of the silicon rod is determined by R 1 = U I where U is a voltage between two ends of the silicon rod and I is a current strength, and a second resistance R2 is determined by R 2 = ? ? L A were ? is a resistivity of silicon, L is a length of the silicon rod and A is a cross-sectional area of the silicon rod. A morphology index M is calculated from the ratio R1/R2.

Abstract: The present disclosure relates to a method for producing polycrystalline silicon fragments. The process includes (a) providing a polycrystalline silicon rod, (b) working the surface of the silicon rod by means of a hammer or needle hammer to remove at least a portion of a layer of the surface of the polycrystalline silicon rod, and (c) reducing the silicon rod to fragments. Wherein an amount of impact energy expended by the hammer and/or needle hammer is from 1 J to 15 J.