Abstract: The present invention provides exemplary cluster tool systems and methods for processing wafers, such as semiconductor wafers. One method includes providing (710) a wafer having initial thickness variations between two wafer surfaces. The wafer is subjected to grinding (720), polishing (730) and cleaning (740) processes. The wafer is thereafter transferred (750) to a wafer processing chamber to undergo device formation processes (760-780). The wafer processing steps may be undertaken in a series of process modules of sufficiently small size to permit their use in a circuit device fabrication facility. The in-fab processing of wafers reduces the number of process steps, cost and time typically associated with wafer processing prior to device formation thereon.

Abstract: The present invention provides exemplary methods, systems and apparatus that provide improved substrate characteristics after grinding operations by avoiding or reducing overgrind damage to the wafers. In one embodiment, a grinding apparatus (100) includes a first spindle (110) having an eccentric-shaped abrasive matrix (112) coupled thereto and a second spindle (116) adapted to hold a substrate (118) to be ground. The second spindle is offset from said first spindle such that the abrasive matrix passes through the substrate surface center (134) for only a portion of the time during grinding operations.

Abstract: Exemplary methods, systems and apparatus are provided for accomplishing mixing of chemistries, such as those used in polishing materials used in semiconductor manufacturing. A manifold is provided that combines chemistries with a mixing element, for example, so that the stability of the chemical solution can be maintained so as to facilitate polishing. The mixing element can be oriented in a stationary position, or alternatively, it can be agitated.

Abstract: The present invention provides exemplary methods, systems and apparatus that provide improved substrate characteristics after grinding operations by avoiding or reducing overgrind damage to the wafers. In one embodiment, a grinding apparatus (100) includes a first spindle (110) having an eccentric-shaped abrasive matrix (112) coupled thereto and a second spindle (116) adapted to hold a substrate (118) to be ground. The second spindle is offset from said first spindle such that the abrasive matrix passes through the substrate surface center (134) for only a portion of the time during grinding operations.

Abstract: The present invention provides exemplary methods, systems and apparatus that provide improved substrate characteristics. The present invention may be used in conjunction with or after grinding operations prior to circuit device formation, or alternatively in conjunction with CMP operations on a device wafer between device process steps. In one embodiment, an apparatus (100) for processing a substrate (118) includes a rotatable first spindle (110) having a grind pattern coupled thereto for grinding the substrate. The first spindle is further adapted to receive a polishing pad (200). The apparatus includes a second spindle (116) adapted to hold the substrate, and a gimbal device (150) coupled to the first spindle and adapted to provide three axis movement thereof. In this manner, the same apparatus may be used for both grinding and polishing of a wafer.