Abstract: Methods and systems for in situ process control, monitoring, optimization and fabrication of devices and components on semiconductor and related material substrates includes a light illumination system and electrical probe circuitry. The light illumination system may include a light source and detectors to measure optical properties of the in situ substrate while the electrical probe circuitry causes one or more process steps due to applied levels of voltage or current signals. The electrical probe circuitry may measure changes in electrical properties of the substrate due to the light illumination, the applied voltages and/or currents or other processes. The in situ process may be controlled on the basis of the optical and electrical measurements.

Abstract: Methods and systems for processing semiconductor materials with a focused laser beam. Laser light may be focused on a sample to alter material properties at the sample surface. The laser beam has a peak power, a pulse width and is modulated to a selected duty cycle to provide a selected energy per pulse and average power to the sample surface. The focused laser beam is scanned over the sample surface to provide controlled process effects limited to the area of the beam diameter and along the scanning path. For example, process effects such as curing, annealing, implant activation, selective melting, deposition and chemical reaction may be achieved at dimensions limited by the focused beam diameter. The wavelength may be selected to be appropriate for the process effect chosen.

Abstract: Methods and systems for control and monitoring processing of semiconductor materials with a focused laser beam. Laser light may be focused on a sample to excite optical emission at the sample surface during processing, which may include laser processing. Optical emission spectra produced may be analyzed for various properties effectively during the process. For example, process effects such as chemical composition analysis, species concentration, depth profiling, homogeneity characterization and mapping, purity, and reactivity may be monitored by optical spectral analysis. The wavelength may be selected to be appropriate for the process effect chosen.

Abstract: Systems and techniques for improved spectroscopy. In some embodiments, mechanical and/or optical zoom mechanisms may be provided for monochromator systems. For example, movable detector systems allow a detector to be positioned with respect to a dispersive element in order to obtain a first resolution. The detector systems may then allow the detector to be positioned with respect to a dispersive element to obtain a second different resolution. In some embodiments, spectroscopy of a first sample region may be performed using a plurality of excitation wavelengths. Multiple detectors may be positioned to receive light associated with different ones of the plurality of excitation wavelengths.

Abstract: A copper film is treated by applying light at short wavelengths, e.g., at less than 0.6 ?m, to heat the copper film and generate a large temperature gradient from the surface of the copper to the interface between the copper and underlying silicon. As a result, grain growth in the copper is enhanced.

Abstract: Systems and techniques for contemporaneous Raman and photoluminescence spectroscopy. Light that has interacted with a sample is dispersed to separate wavelength components, including Raman and photoluminescence components. A first array detector is positioned to receive Raman components, and a second array detector is positioned to receive Raman components. The first array detector and the second array detector may comprise the same detector material, or different detector materials.

Abstract: A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including at least a plate defining an internal cavity configured to receive gas. The gas enters the internal cavity through a first passage at a first temperature, and exits the internal cavity at a second temperature through a second passage.

Abstract: A copper film is annealed at high pressure to enhance grain growth and remove voids. Other films, such as dielectrics, may also be suitable. High pressure can be used in conjunction with temperatures lower than room temperature for annealing or higher temperatures may be used to further enhance grain growth.

Abstract: A copper film is treated by applying light at short wavelengths, e.g., at less than 0.6 ?m, to heat the copper film and generate a large temperature gradient from the surface of the copper to the interface between the copper and underlying silicon. As a result, grain growth in the copper is enhanced.

Abstract: A ring is provided that, together with a wafer, separates a processing chamber into an upper portion and a lower portion so that one side of the wafer, such as the backside, can be cleaned or otherwise processed with little or no interaction to the frontside of the wafer. The wafer sits on pins extending from a plate so that processor cleaning gases can contact the surface of the wafer backside. In one embodiment, the ring is conductive, with an inner insulating ring, and the place is also conductive. The conductive plate and ring act as electrodes for plasma generation underneath the wafer.

Abstract: A process chamber includes an opening, two or more stacked cold plates adjacent the opening, two or more stacked hot plates adjacent the cold plates, and a rotatable wafer transport capable of moving a wafer between the cold plates and between the hot plates for processing of the wafer. The wafer can be rapidly heated while between the hot plates. The wafer transport has perpendicular walls about a pivot such that when the wafer is between the cold plates or between the hot plates, one of the walls separates the cold and hot portions, thereby increasing the efficiency of cooling and heating.

Abstract: After ion implantation, thermal ashing is performed using ozone at a pressure of between about 0.01 to about 1000 Torr at below 1000° C. to remove the resist. Since the process includes a substantial amount of ozone, the resist can be completely oxidized, thus leaving no residue or other contaminates to remain on the substrate. Using ozone allows fast resist removal with minimal residue at low temperatures.

Abstract: A multi-spectral uniform light source provides a single light source for a variety of applications. The gas or gases inside the light source may be exchanged for another gas or gases depending on the desired application and need for a particular wavelength of emitted light.

Abstract: An apparatus and corresponding method for heating a wafer during processing. The apparatus includes a process chamber enclosing a processing tube defining a processing area. The processing tube includes a first wall and a second wall which define a hollow cavity or passageway therebetween. The second wall includes a plurality of holes or outlets formed thereon which allow environmental communication between the hollow cavity and the processing area. The apparatus also includes a plurality of resistive heating elements positioned adjacent to the processing tube. A thermal energy output from the resistive heating elements is configured to heat a gas flowing through the hollow cavity. The gas flowing through the hollow cavity exits the hollow cavity through the plurality of holes and convectively change the temperature of the wafer disposed in the processing tube.

Abstract: A wind power system is provided including at least one generator fan having a front face and a rear face. The system also includes a first wind capturing device positioned proximate to the front face. The wind capturing device can be configured to capture wind to create a first pressure proximate to the front face that is greater than a second pressure proximate to the rear face. The pressure difference causes the captured wind to flow across the at least one generator fan from the front face to the rear face.

Abstract: After ion implantation, thermal ashing is conducted in a high oxygen concentration at a pressure of between about 100 to about 760 Torr at below 700° C. to remove the resist. Since photoresist consists of Carbon (C), Hydrogen (H) and Oxygen (O), the products of reaction of the thermal oxidation of the photoresist include CO2 and H2O. Since the process includes a substantial amount of oxygen, the resist can be completely oxidized, thus leaving no residue or other contaminates to remain on the substrate.

Abstract: A system, method and apparatus for processing a semiconductor device including a processing chamber and a heating assembly positioned within the processing chamber. The heating assembly including at least a plate defining an internal cavity configured to receive gas. The gas enters the internal cavity through a first passage at a first temperature, and exits the internal cavity at a second temperature through a second passage.

Abstract: A system and method for isothermally distributing a temperature across a semiconductor device. A furnace assembly is provided, which includes a processing tube configured to removably receive a wafer carrier having a full compliment of semiconductor wafers. A heating assembly is provided which can include a heating element positioned to heat air or other gases allowed to enter the process tube. The furnace assembly and process tube are capable of being vertically raised and lowered into a position enclosing the heating assembly within the process tube. Once the heating assembly forms a seal with the process tube, the process tube is exhausted and purged of air. Gas is then allowed to flow into the process tube and exchange heat with the heating element. The heated gas circulates through the process tube to convectively change the temperature of the wafers.

Abstract: A wafer processing system which requires no isolation between the operational areas within the processing system. The system of the present invention includes operational areas, such as a loading area, a transport area, and a reactor or thermal processing area. Advantageously, since there are no isolation devices or gate valves separating the areas, the processing system effectively has each operational area combined into a “single” chamber. Preferably, the single chamber has a single slit valve, hinge door, or other vacuum sealable door disposed proximate to the loading area to allow for the removal/insertion of the wafers into the loading area. Once the door to the loading area has been closed the internal pressure within the chamber can be kept uniform throughout each operational area.

Abstract: A rapid thermal processor, having a process chamber, including a stable heat source in the form of a heatable mass. Heat is provided to the heatable mass using a series of heating devices. The temperature of the heatable mass establishes the temperature of a semiconductor wafer placed in contact or in close proximity to the heatable mass. To reduce thermal gradients, the heatable mass can be included in an insulative compartment made of an insulating material, such as opaque quartz and the like. The top of the insulative compartment can include an access portion to allow the semiconductor wafer to be placed on the heatable mass disposed therein. During processing, the wafer may be further exposed to a high intensity radiation energy source for a short duration of time.