Abstract: A method for manufacturing an MEMS device is provided. The method includes steps of a) providing a first substrate having a concavity located thereon, b) providing a second substrate having a connecting area and an actuating area respectively located thereon, c) forming plural microstructures in the actuating area, d) mounting a conducting element in the connecting area and the actuating area, e) forming an insulating layer on the conducting element and f) connecting the first substrate to the connecting area to form the MEMS device. The concavity contains the plural microstructures.

Abstract: A method for enhancing light extraction efficiency of a light emitting diode is disclosed. The method includes the steps of providing a light emitting diode including in sequence a substrate, a first layer of a first conduction type, an active layer, and a second layer of a second conduction type opposite to the first conduction type; growing a number of protrusions on at least one layer selected from the first layer, the active layer, and the second layer of the light emitting diode to form a patterned oxide layer for protecting the light emitting diode from etch; controlling height of the protrusions to achieve a predetermined etching depth of the light emitting diode; dry etching through a portion of the light emitting diode which is not protected by the patterned oxide layer to form a plurality of depressions on the light emitting diode; and removing the oxide layer from the selected layer. The light emitting diode is patterned so that more light beams can be emitted.

Abstract: A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting device; placing a protection layer on the site layer; forming an array of pores through the protection layer and the site layer; and growing on the site layer an oxide layer, having a plurality of rods, each of which is formed in one of the pores. The shapes of the rods can be well controlled by adjusting reactive temperature, time and N2/H2 concentration ratio of atmosphere such that the shape and light escape angle of the rods can be changed.

Abstract: A polarized light converting system is disclosed in the present invention. The converting system includes a polarizing splitting unit, for splitting an unpolarized incident light beam into a first polarized light beam and a second polarized light beam, passing the second polarized light beam, and reflecting the first polarized light beam; a reflector for reflecting the second polarized light beam back through the polarizing splitting unit; a condensing unit, for guiding the condensed first polarized light beam through a first area and the condensed second polarized light beam through a second area which does not overlap the first area; and a retarder unit placed at either the first area or the second area for converting the unpolarized incident light beam into polarized light beams having the same polarization state such that illumination efficiency can be increased.

Abstract: A method for enhancing light extraction efficiency of a group-III nitride-based light emitting device is disclosed. By roughening a n-type group-III nitride-based cladding layer or an undoped group-III nitride-based layer, a reflecting layer is formed. Because of gaps on the roughened surface, total internal reflection occurs, and light beams can be reflected back to a top surface of the light emitting device. Thus, the light extraction efficiency can be increased, and more light beams can be collected in a desired direction.

Abstract: A pico projector device used with a mobile phone is disclosed. The pico projector device used with a mobile phone includes: a housing; a connector, partially exposed from the housing, for connecting with the mobile phone; and a pico projector module, provided in the housing, for projecting an image under control of the mobile phone based on an image signal from the mobile phone through the first connector.

Abstract: A method for enhancing light extraction efficiency of GaN light emitting diodes is disclosed. By cutting off a portion from each end of bottom of a sapphire substrate or forming depressions on the bottom of the substrate and forming a reflector, light beams emitted to side walls of the substrate can be guided to the light emitting diodes.

Abstract: A light emitting diode having a substrate, an electron injection layer, an active layer, a hole injection layer, a first pad electrically connected to the hole injection layer, and a second pad electrically connected to the electron injection layer. The hole injection layer includes an activated region and a patterned non-activated region. The first pad is disposed upon the non-activated region and the first pad and the non-activated region are overlapping in the vertical direction.

Abstract: The present invention is to provide a method of forming a vertical structure light emitting diode with a heat exhaustion structure. The method includes steps of: a) providing a sapphire substrate; b) depositing a number of protrusions on the sapphire substrate, each of which has a height of p; c) forming a buffer layer having a number of recesses, each of which has a depth of q smaller than p so that when the protrusions are accommodated within the recesses of the buffer layer, a number of gaps are formed therebetween for heat exhaustion; d) growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; e) etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; f) removing the sapphire substrate and the protrusions by excimer laser lift-off (LLO); g) roughening the medium layer; and h) depositing electrodes on the roughened medium layer.

Abstract: A light emitting diode apparatus with enhanced luminous efficiency is disclosed in the present invention. The light emitting diode apparatus includes a light emitting diode chip for providing a first light beam; a substrate, having a cross-section of a trapezoid, for supporting the light emitting diode chip, which is transparent to the first light beam; and an encapsulating body, containing a phosphor and encapsulating the light emitting diode chip and the substrate, for fixing the light emitting diode chip and the substrate and providing a second light beam when the phosphor is excited by the first light beam. Due to the shape of the substrate, contact area of the substrate with the phosphor is enlarged. Luminous efficiency is enhanced as well.

Abstract: An illumination system for a projection display is disclosed in the present invention. The illumination system has three light sources for providing three primary color rays, two collimators for collimating the rays into light beams, and two beam splitters for reflecting and passing the light beams to make white light available. It can also include three light sources, one collimator and three individual beam splitters. The illumination system has a compact size and low manufacturing cost. Its lighting efficiency is better than that of a conventional illumination system. Hence, it is suitable for small size projectors.

Abstract: An edge type backlighting module is disclosed in the present invention. The edge type backlighting module includes at least one light source array for providing light beams; at least one reflecting mirror, rotating within a specified angle, for reflecting the light beams; and a light adjusting medium for adjusting outgoing directions of the reflected light beams. It further has at least one infrared sensor for detecting light beams reflected from a surface of the light adjusting medium when a user touches the surface and generating a signal representing a touch location.

Abstract: A light emitting diode assembly is disclosed in the present invention. The light emitting diode assembly has a substrate and several light emitting diode units. It can also include several light emitting diode units fabricated on cavities formed in the substrate. Any light emitting diode unit is composed of a light emitting diode chip covered with a phosphor layer for providing light beams, and a reflecting unit installed or formed on the substrate, coated with a reflective film, surrounding the light emitting diode chip for reflecting the light beams emitted from the light emitting diode chip, and directing the light beams upward. The light emitting diode unit further includes a light condenser provided above the light emitting diode chip for guiding the light beams upward. The assembly can collect all light beams emitted laterally. Hence, lighting efficiency for the light emitting diode assembly can be improved.

Abstract: A microminiaturized projection module for projecting an image onto an object is disclosed in the present invention. The module includes a number of light units each for providing red, green, and blue beams; an image processing unit for receiving the image, dividing the image into n×m image signals, and transforming each of the image signals into a modulating signal and a direction signal, where n and in are integrals not less than 2, respectively; a number of modulation units for modulating the beams from one light unit according to the modulating signal received from the image processing unit and sending out the modulated beams simultaneously; and an array of n×m mirrors for projecting the modulated beams to form the image onto the object according to the direction signal received from the image processing unit. The invention has advantages that can reduce modulation speed, undergo slight shock and be free from raster pinch effect.

Abstract: A light emitting diode device is disclosed in the present invention. The device includes a substrate, an integrated passive device, at least four rectifying diodes and several light emitting diodes. The rectifying diodes form a bridge rectifier to rectify an external alternating current (AC) inputted into a direct current so that the light emitting diodes can lighten. Furthermore, the light emitting diode device has a Zener diode, formed on the substrate and connected with the integrated passive device for regulating the direct current. It can also have a varistor, connected with the Zener diode in parallel, for protecting the light emitting diode device from surges.

Abstract: The present invention is to provide a method of forming a vertical structure light emitting diode with a heat exhaustion structure. The method includes steps of: a) providing a sapphire substrate; b) depositing a number of protrusions on the sapphire substrate, each of which has a height of p; c) forming a buffer layer having a number of recesses, each of which has a depth of q smaller than p so that when the protrusions are accommodated within the recesses of the buffer layer, a number of gaps are formed therebetween for heat exhaustion; d) growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; e) etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; f) removing the sapphire substrate and the protrusions by excimer laser lift-off (LLO); g) roughening the medium layer; and h) depositing electrodes on the roughened medium layer.

Abstract: A method for enhancing electrical injection efficiency and light extraction efficiency of a light-emitting device is disclosed. The method includes the steps of: providing a site layer on the light-emitting device; placing a protection layer on the site layer; forming a cavity through the protection layer and the site layer; and growing a window layer in the cavity. The shape of the window layer can be well controlled by adjusting reactive temperature, reactive time, and N2/H2 concentration ratio of atmosphere such that light escape angle of the window layer can be changed.

Abstract: A method for enhancing light extraction of a light emitting device is disclosed. The method includes the steps of: providing a site layer on the light emitting device; placing a protection layer on the site layer; forming an array of pores through the protection layer and the site layer; and growing on the site layer an oxide layer, having a plurality of rods, each of which is formed in one of the pores. The shapes of the rods can be well controlled by adjusting reactive temperature, time and N2/H2 concentration ratio of atmosphere such that the shape and light escape angle of the rods can be changed.

Abstract: A method for improving internal quantum efficiency of a group-III nitride-based light emitting device is disclosed. The method includes the steps of: providing a group-III nitride-based substrate having a single crystalline structure; forming on the group-III nitride-based substrate an oxide layer, having a plurality of particles, without absorption of visible light, size, shape, and density of the particles are controlled by reaction concentration ratio of nitrogen/hydrogen, reaction time and reaction temperature; and growing a group-III nitride-based layer over the oxide layer; wherein the oxide layer prevents threading dislocation of the group-III nitride-based substrate from propagating into the group-III nitride-based layer, thereby improving internal quantum efficiency of the group-III nitride-based light emitting device.

Abstract: A color tunable light emitting diode is disclosed in the present invention. At least two light emitting chip groups each has a number of light emitting chips mixed with at least one phosphor to produce light with a specific correlated color temperature. By supplying tunable currents to the light emitting chip groups, properly arranging the light emitting chips and providing a suitable substrate, the color tunable light emitting diode can be achieved. The present invention provides a simple and workable method to manufacture tunable light emitting diodes which fulfill the requirement of compact design of modern electronic products.