Abstract: The present disclosure generally relates to reducing latency when fetching Scatter Gather Lists (SGL). Rather than fetching the required SGLs sequentially regardless of what SGL descriptor is needed, the data storage device fetches all of the last entries of each SGL segment in ahead of time after receiving the command, but before the read data is available. The data storage device will still fetch the previous entries in the segment. Once the last entries are fetched, the last entries are stored in a table where the earlier descriptors of each segment are stored as the segments are fetched. In so doing, parallel fetching allows the data storage device to fetch SGL descriptors as needed and reduces the latency.

Abstract: The present disclosure generally relates to improving programming to data storage devices, such as solid state drives (SSDs). A first memory device has a first XOR element and a second memory device has a second XOR element. The ratio of the first XOR element to the capacity of the first memory device is substantially smaller than the ratio of the second XOR element to the capacity of the second memory device. A read verify operation to find program failures is executed on either a wordline to wordline basis, an erase block to erase block basis, or both a wordline to wordline basis and an erase block to erase block basis. Because the program failures are found and fixed prior to programming to the second memory device, the second XOR element may be decreased substantially.

Abstract: Disclosed are systems and methods for accelerating commands from accelerators in data storage devices using accelerator queues. A data storage device includes accelerator interfaces, each accelerator interface couples a controller to a respective accelerator. The device also includes a device memory comprising one or more memories and one or more sets of queues. Each set of queues corresponds to a respective memory, at least one queue is configured to queue one or more tasks associated with an accelerator, and each queue is associated with a respective priority level of a plurality of priority levels. A controller is configured to: receive an accelerator command, identify a first memory corresponding to a task for the accelerator command; and enqueue the task to a first queue corresponding to the first memory, the first queue configured to queue one or more tasks associated with the first accelerator corresponding to the first accelerator interface.

Abstract: Technology is disclosed herein for handling of mixed random read and sequential read command sequences. Plane read commands are formed from one or more sequential read commands. A sequential read command may be split into multiple plane read commands at plane boundaries. The plane read commands are submitted to the respective planes as asynchronous independent plane read commands. Random read commands may be submitted to the planes as asynchronous independent plane read (AIPR) commands on par with the split sequential read commands. Therefore, AIPR may be used for both sequential read commands and random read commands. Submitting a split sequential read command to one or more planes while one or more other planes are performing a random read command can significantly improve performance.

Abstract: Example read channel circuits, data storage devices, and methods to provide overlapping processing of data tracks are described. The data storage device may include media configured with a plurality of tracks in a concentric or continuous pattern. The read signal for a data track may be processed using error correction codes (ECC) as it is read during a first track read operation period. Some portion of its data sectors may need additional ECC postprocessing after the first track is initially received and processed by the read channel circuit. While the read signal for a next data track is being read and processed, the read channel circuit may continue postprocessing of the portion of data sectors from the first track during the second track read operations. Various decision parameters for managing the data stream, additional postprocessing time, and rereading tracks for data recovery are also described.

Abstract: A data storage device including a non-volatile memory device including one or more non-volatile memory sets and one or more endurance groups. Each of the endurance groups includes at least one of the non-volatile memory sets. The data storage device includes a controller coupled to the non-volatile memory device. The controller is configured to receive a pending command message from a host interface, where the received pending command message includes a command configured to be executed by a first endurance group of the number of endurance groups. The controller is further configured to determine an assigned command slot for storing the command, where the assigned command slot is selected form one of a private command slot pool associated with the first endurance group or a shared command slot pool, fetch the command from the host device, and store the fetched command in the assigned command slot.

Abstract: To provide more uniform performance levels for solid state drive (SSDs), the static power level used by an SSD in an idle state is measured and used to determine a static power offset for each of the drives. The static power offset is set as a parameter for the SSD and used to offset a received power supply level for use on the drive. For a data storage system of multiple SSDs, a common scaling factor can be used to set the degree to which the static power offset is implemented, allowing for a choice between uniformity of power and uniformity of performance for the SSDs of a data storage system.

Abstract: Apparatuses and methods of directly accessing a memory space of a storage device by a host are provided. In one embodiment, a method of driverless access of a non-volatile memory of a non-volatile memory device by a host includes initializing a PCIe memory space mapping a portion of the non-volatile memory of the non-volatile memory device to a host memory space. The non-volatile memory is mapped through a PCIe link between the host and the non-volatile memory device. Load/store commands are sent to the PCIe memory space for driverless access. The method further includes negotiating an alignment size of the minimum transaction packet size to complete the load/store commands.

Abstract: A data storage device includes a memory device and a controller to the memory device. The controller is configured to receive key value (KV) pair data having a key and a value from a host device and generate a mapping in a key-to-physical (K2P) table corresponding to the received KV pair data. The mapping includes a first slot for storing a physical address corresponding to the value and a second slot for storing a physical address corresponding to metadata associated with the KV pair data. When the associated metadata is sent to the data storage device, which may be non-concurrent to transferring the KV pair data, the mapping of the associated metadata is linked to a same key as the mapping of the KV pair data. Thus, using the mapping, the key of the KV pair data is associated with the KV pair data and the associated metadata.

Abstract: A host system includes an interface for coupling the host system to a data storage device. The host system also includes one or more processors, and memory storing one or more programs for execution by the one or more processors. The one or more programs include instructions for: determining if a retrim is needed for the data storage device; and in accordance with a determination that the retrim is needed: identifying a time to initiate a new trim on the data storage device; and causing the new trim on the data storage device at the time identified.

Abstract: A data storage device includes a host interface for coupling the data storage device to a host system. The data storage device also includes a device memory and a controller. The controller is configured to determine if a retrim is needed for the data storage device. In accordance with a determination that the retrim is needed, the controller is configured to identify a time to initiate a new trim on the data storage device, and cause the new trim on the data storage device at the time identified.

Abstract: The present disclosure generally relates to aligning non-aligned data for more efficient data reading. Data for write commands does not always perfectly align, yet the data is written in order of write command receipt. In such cases, aligned chunks of data may be split into two word lines (WLs) due to the presence of previously received smaller chunks of data. Rather than writing the data in order, the smaller chunks of data, which are non-aligned, are held in a buffer and written later to ensure that any aligned chunks of data remain aligned when written to the memory device. Once sufficient smaller chunks or data have accumulated to be aligned, or upon a need to write the smaller chunks upon reaching a threshold, the smaller chunks are written together in a single WL so as to not cause non-alignment of aligned data.

Abstract: A data storage device includes a memory device and a controller. The controller is configured to assert a strobe cycle having a plurality of strobes to the memory device, where a die of the memory device may be associated with one or more strobes of the plurality of strobes. The controller is further configured to determine whether the die of the memory device requires additional power and adjust a strobe length of time of the corresponding strobe when the die of the memory device requires additional power. The controller is further configured to decrease a strobe length of time of one or more strobes that do not require additional power. By utilizing a time division peak power management (TD-PPM) feature by dynamically changing a strobe length of time of each strobe of the plurality of strobes, performance and latency of the data storage device may be improved.

Abstract: A data storage device has a controller that instructs a memory to read memory cells using a number of different read voltage levels and then selects the read voltage level that provides the best read. Instead of sending individual commands for each of the different read voltage levels, the controller sends a single command that specifies an initial read voltage level and a voltage shift, and the memory automatically increments the read voltage level by the voltage shift for each read.

Abstract: The present disclosure generally relates to utilizing a transparent host memory buffer (HMB) where the host device is granted access to the HMB to obtain data from a mapping table. The data storage device stores the mapping table in HMB and then allows the host device to view the mapping table and retrieve information. The host device sends a command to the data storage device that includes not only a read command, but also mapping table info specific to the read command. Additionally, an indication of the mapping table version from where the information is also provided. The data storage device, upon receiving the command, confirms the version of the information is the most recent version and then, if confirmed, utilizes the mapping information provided with the command. In so doing, accessing the HMB after receiving the command will not be necessary.

Abstract: Technology is disclosed herein for early erase termination as a counter-measure for erase disturb. Multiple erase blocks of NAND memory cells are erased in parallel during an erase procedure. Erasing multiple erase blocks in parallel can place considerable strain on the circuitry that generates the erase voltage. If there is significant leakage current in one of the erase blocks the magnitude of the erase voltage for all of the erase blocks may drop. The erase blocks are tested sequentially for leakage current during the first erase loop while the erase voltage is applied to only the erase block under test. If any erase block fails the leakage current test that erase block is removed from the erase procedure. One or more additional erase loops are then performed with only those erase blocks that passed the leakage current test simultaneously receiving an erase voltage, thereby preventing erase disturb with early termination.

Abstract: The present disclosure generally relates to improving adaptive tuning of different clock rates of a memory device. Rather than clock rates only being determined off of one parameter such as workload, the clock rates now will be determined using multiple parameters. The tuning may be based on system parameters to allow the system to withstand challenges that arise during the operation. The clock frequency table is maintained in the device controller. The table holds the clock frequency of each component. The disclosure proposes modifying the table according to different system environment parameters to maintain performance or reduce power consumption. Adaptive tuning allows a more flexible system design that can adapt according to the current system status. Adaptive tuning also reduces peak power consumption, improves performance, and better quality of service (QoS) compatibility characteristics.

Abstract: Disclosed are systems and methods for large write planning for performance consistency and resource usage efficiency. A method is implemented using one or more controllers for one or more storage devices. The method includes receiving, via a host interface, a notification of a write data burst. The method also includes computing available spaces in a plurality of memories and a write ratio, to handle the write data burst to the plurality of memories, based on the notification. The method also includes receiving, via the host interface, the write data burst. The method also includes, in response to receiving the write data burst, toggling writes between the plurality of memories, based on the available spaces and the write ratio.

Abstract: Various processes for efficiently and effectively managing huge pages include a process for optimizing memory deduplication of huge pages, optimizing the promotion of one or more base pages to one or more huge pages and optimizing memory compaction of a memory space associated with a huge page.

Abstract: Devices and methods are described for reducing etching due to Galvanic Effect within a printed circuit board (PCB) that may be used in an electronic device. Specifically, a contact trace is coupled to a contact finger that has a substantially larger surface area than the contact trace. The contact finger is configured to couple the electronic device to a host device. The contact trace is electrically isolated from the rest of the PCB circuitry during a fabrication process by a separation distance between an exposed portion of the contact trace and an impedance trace. The contact finger and the exposed portion of the contact trace are plated with a common material to reduce galvanic etching of the contact trace during fabrication. The contact trace is then connected to the impedance trace using a solder joint.