Abstract: A breakaway registration pin (11, FIG. 2) comprises two sections, a first section (21) embedded in a glass art master (10) and a second section (22) bonded by a bonding agent to a top face (33) of the embedded first section (21). The bonding agent has a strength substantially less than the strength of the glass such that the registration pin (11) will break before the glass in art master (10) cracks when a force is applied to second section (22).

Abstract: A thick solder blob (56) is bonded to a land area 34 on a metallized substrate (31) by (a) depositing a thick layer of solder paste on the land area; (b) confining the solder paste with a hard material; and (c) reflowing the solder paste to bond the solder blob (56) to the land area (34) while maintaining the thickness thereof.

Abstract: A pair of opposite surfaces (17 and 18) of shaped, digitated edge features (12) of a metal strip (11) are selectively treated in an electrolytic treating cell (32) while adjacent edge surfaces (22 and 23) of such features are shielded from exposure to the treatment. The desired treatment, such as a gold plating process, is accomplished on two opposite, outwardly facing surfaces of a strip of center carried pins by engaging the strip with lateral masking belts having complementary edge features. The strip and the masking belts are passed through a treating cell between paired off electrodes (40 and 41). An electric field between each electrode and the respective, adjacent surface of the strip (11) accomplishes the treatment. Slotted openings through the masking belts relieve pressure differentials in the electrolyte on either side of the strip to minimize fluid flow through gaps between the digitated strip and the masking belts.

Abstract: A high pressure steam condensation soldering facility (10) is described. The facility (10) incorporates a chamber (12) having a centrally located heat processing zone (45) into which high pressure steam is injected to reflow solder on articles (43) therein. A baffle (41) having a conical top portion (51) with a plurality of apertures (52) therein permits controlled amounts of the steam to pass therethrough while redirecting a portion of the steam along the wall (16) of the chamber (12) to interpose a shield of steam between the wall and uniformly heated processing zone (45).

Abstract: In the growth of gadolinium gallium garnet monocrystals, a crucible is charged with a preformed body (65) of oxide powders to form a melt. In preparation therefor, the oxide powders are formulated into a typical particulate material (16) which is compacted into a body (65) having a desired size and shape. For holding material (16), there is provided a pouch (38) of a first size having elastic walls expandable to a second size, larger than body (65). The pouch (38) is disposed within a chamber (36) having inside walls conforming to the desired shape of the body (65) but of the second size. An open neck (42) of the pouch (38) extends through and is sealed to an opening (60) in chamber (36). Then a vacuum is drawn between the pouch (38) and chamber (36) to expand pouch (38) to said shape and second size formed by the chamber walls. As the particulate material (16) is introduced into the expanded pouch (38), such material conforms to the shape and second size of such expanded pouch.

Abstract: A process is disclosed for reclaiming a jelly-filled telecommunication cable. The process comprises the steps of cutting the cable into segments of jelly bearing insulated wires and forming the segments into a slurry heated to a temperature sufficient to soften the jelly. The slurry is milled thereby liberating insulation from the wires with a substantial portion of the softened jelly adhering to the liberated insulation. The jelly-bearing liberated insulation is then separated from the wires.

Abstract: An off-line system for handling elongated magnetic articles such as axially leaded diodes 12 includes a magnetic receiving chute 20, a blocking mechanism 45, a magnetic loading station 75 for supporting at least one tray 55 and for loading diodes 12 therein, and a drive train 115. The chute 20 receives the diodes 12 and guides such diodes downwardly to an outlet 24 and the tray 55. Over a major accessible face of the tray 55 a cover 63 is slidably removable from a second end 60. At the loading station 75, the tray 55 is disposed in an upright manner resting on the second end 60 at a first elevation with a first end 59 extending at least to the outlet 24 of chute 20. An elevating mechanism 80 applied to the end 60 elevates tray 55 to a second elevation, while the cover 63 remains at about the first elevation. A portion of tray 55 is thereby opened adjacent the first end 59 which opening abuts to and registers with the outlet 24 of chute 20.

Abstract: A photomask (30) used to form patterns on a resist coated semiconductor wafer is comprised of a transparent baseplate (31) having a thin metallic pattern (32) thereon; a transparent, planar coverplate (33) in intimate contact with the patterned baseplate (31) and an index matching fluid (34) interposed therebetween.

Abstract: A planar electrode (17) having a plurality of concentric channels (34-34) therein through which coolant fluid passes to cool the electrode during a plasma etching process. The coolant is directed through at least two of the adjacent channels in opposite directions with the inputs (31) and outputs (32) located in close spaced relation to one another to provide a substantially uniform temperature on the surface of the electrode proximate thereto.

Abstract: An n-type region of a semiconductor body, such as a surface region of a bulk wafer or an epitaxial layer region grown on a wafer (12), is successfully submitted to a capacitance-voltage test using a mercury probe (11) after being subjected to a pretreatment. The pretreatment includes forming a thin oxide layer, preferably in the order of 10 to 20 Angstrom units thick, on the surface of the wafer (12), and pulsing the mercury into contact with the pretreated surface while a reverse bias voltage is applied between the mercury and the region. If a resulting reverse leakage current exceeds a desired current threshold value, the pulsing of the mercury into contact with the surface of the water (12) is repeated until a rectifying contact having a sufficiently low reverse leakage current through the mercury-to-semiconductor interface has been established.

Abstract: Elongated magnetic diodes 12 are removed from a carrier 20 having a periphery along which the diodes 12 are advanced. A magnetic bin 75 has spaced sidewalls 76 and 77 extending to either side of the periphery of carrier 20. There is established between and transverse to the sidewalls a first magnetic field of sufficient strength to remove the diodes 12 from along a first distance at a first location on carrier 20. There is provided a movable retention mechanism 70 for optionally magnetically retaining the diodes 12 on carrier 20 as such diodes 12 are advanced along and beyond the first location and over a second distance to a second location. Mechanism 70 has a magnetic member 93 fixedly disposed along the second distance and a movable magnetic member 95 of sufficient length to retain the diodes 12 along the first distance. Member 95 is pivotally mounted to member 93 and member 95 is disposed in a normally inactive position within carrier 20.

Abstract: A support shelf (12) having high strength and of unitary sheet metal construction, for supporting a plurality of closely-spaced printed circuit boards (28 and 29) and aligning the boards with respect to closely-spaced upper and lower connector plugs (24 and 26) of a backplane assembly (22) includes spaced front and rear support sections (40 and 42) and spaced front and rear guide sections (60 and 66).

Abstract: A Czochralski-type crystal growing apparatus (10) supports a crystal (12) with respect to a melt (14) by a plurality of flexible cables (41, 42 and 43). The supporting lengths of the cables are radially offset in a horizontal plane from a vertical central axis (29) about which the growing crystal (12) is rotated with respect to the melt (14). Because of their radially offset position, the cables have the capacity to oppose a torque which is typically generated by the relative rotation of the crystal with respect to the melt. The supporting cables (41, 42 and 43) also impart increased orientational stability to a lower support bracket (26) which holds the crystal (12) relative to the melt (14).

Abstract: A removable mask (22) protects at least one portion of a substrate (10) during treatment such as irradiation thereof. To obtain mask (22), there is applied over said portion of substrate (10) a parting layer (44) of a metal selected from the group consisting of nickel, aluminum, indium and tin. Over the parting layer (44), there is applied the removable mask (22) of a material which is adherent and harmless to the parting layer (44) and is substantially impenetrable by the treatment. After irradiation, the parting layer (44) is treated with at least a detaching agent sufficiently to detach said parting layer (44) and the mask (22) from substrate (10). For proton bombardment of a substrate (10) which includes gallium arsenide, the parting layer (44) is preferably nickel, the mask is preferably gold and the detaching agent includes hydrochloric acid.

Abstract: A surface of a substrate 11 (FIG. 2) is uniformly coated with a liquid L by wetting the surface with the liquid and compressibly contacting the wetted surface with an applicator member 10 having an outer layer 14 of a compressible liquid absorbing material with inverse sponge characteristics and an inner layer 13 of compliant material. Preferably the member is a roller 10 having a silicone rubber or polyurethane inner layer and a chamois outer layer. A plurality of the rollers 10 are arranged to be in compressive contact with the surfaces of a plurality of substrates 11 as the substrates are being removed from the liquid L (arrow A), the movement of the substrates 11 causing rotation (arrow F) of the rollers to apply a uniform coating of the liquid on the contacted surfaces.

Abstract: A jacketed telephone cord is jacketed with a clear, flame retardant, stable composition which essentially does not exhibit vertical burn characteristics comprising an all phosphate plasticized PVC stabilized with the combination of a metallic stabilizer and a cycloaliphatic epoxy.

Abstract: An electronic device assembly (11) includes a heat dissipating substrate (18) having a seat (16). A device (14) is uniformly spaced from a base surface of the seat (16), and a layer of solder of uniform thickness occupies a gap between the surface of the seat and the device. Leads (31) and (33) extend at a shallow, acute angle from the device. A lead (32) is mounted to a support (28) extending from the substrate (18). Inner portions of the leads (31, 32, 33), the device (14) and portions of the substrate (18), are encased by an envelope (22), while outer portions (67) of the leads and a mounting tab (19) of the substrate extend from the envelope.

Abstract: Initially randomly oriented elongated articles (11) are uniformly oriented and inserted into cavities (47) of a magazine (48) in a mass insertion process. The articles (11) are first aligned in parallel grooves (32) of a rack (31), wherein they initially retain a random longitudinal orientation. The articles (11) are then translated longitudinally in one or the other direction depending on their orientation in the rack. Those of the articles extending in the one longitudinal direction are first transferred to the magazine (48) while the other articles remain in the rack. The longitudinal orientation of the remaining articles is thereafter reversed by rotating the rack about its longitudinal axis, and the remaining articles are inserted into the magazine as the complement of such first transferred articles.

Abstract: A Hybrid Integrated Circuit package (11) typically includes a circuit substrate or article (12) on which are formed thin film components (17, 18, 19) of a circuit (22) and to which is bonded at least one semiconductor chip (21). Prior to bonding the chip (21) to the article (12) the circuit (22) undergoes various tests and adjustment operations. An electric element, preferably a resistance element (36), is formed on the article (12). The element (36) is functionally independent of the circuit (22) on the article (12). A first, initial value of the element (36) marks the article (12) as belonging to a first group of articles having first circuit characteristics. The initial value of the element (36) is selectively altered to a second value upon a determination that the article (12) has circuit characteristics other than those of the first group. In the described preferred embodiment the first group is a group of electrically acceptable articles (12), while other characteristics are those of defective articles.

Abstract: Diode chips (44) are cut from a p-n sheet-diffused semiconductor wafer (41). Instead of having conventional rectangular shapes, the chips have a rhomboidal shape. This makes the shape of the chips asymmetric in that one surface (46) of each chip becomes a distinguishable mirror image of its other surface (47). The direction of the p-n junction in the wafer is oriented with respect to the shape of the chips to be cut to place the same conductivity type region adjacent to the same rhomboidal shape of the surface. The shape of the chips (44) thereby aids apparatus (59) to sort the chips into two groups, each group consisting of chips of the same polarity or orientation of their p-n junctions with respect to a common support plane. The apparatus (59) includes a feed track (60) leading to a fork (61) in the track.