Abstract: A heterojunction bipolar transistor (HBT) power transistor with improved ruggedness is disclosed. The optimized design of HBT power transistor combines the use of ballasting resistors, coupling capacitors, as well as novel layout of the transistor cell, which avoids the problem of thermal runaway while maintaining the performance of the HBT power transistor.
Type:
Application
Filed:
November 27, 2002
Publication date:
May 27, 2004
Applicant:
WIN SEMICONDUCTORS CORP.
Inventors:
Yung Jinn Chen, Yu Chi Wang, Tsung-Chi Tsai, Shih-Ming Joseph Liu
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