Abstract: System on chips, memory circuits, and method for data access, the memory circuits including a memory cell array and an input/output (I/O) connection interface coupled to the memory cell array, wherein the I/O connection interface is configured for coupling to an external signal line to directly receive a transistor-level operation signal from an external memory controller for accessing data in the memory cell array.

Abstract: A memory device including a plurality of memory units; at least one geometric mean operator coupled to at least two of the plurality of memory units; and a memory state reader coupled to the at least one geometric mean operator to read a memory state of the plurality of memory units.

Abstract: A memory system includes an interface, a non-volatile memory and a controller. The interface is configured to communicate over an unsecured communication link with an external host. The non-volatile memory is pre-programmed with a device identifier and a corresponding initialization key that are additionally stored in a database that resides externally to the memory system, and is securely accessible by the host. The controller is configured to send the device identifier to the host, to receive from the host, via the interface, binding information that was generated in the host, to generate, using at least the received binding information and the pre-programmed initialization key, a first binding key that matches a second binding key that is generated in the host based on an initialization key securely obtained by the host from the database, and to securely communicate with the host over the communication link using the first binding key.

Abstract: A power-gating electronic system for synchronized power transitions, includes a power generation block including a plurality of cells, each cell including a cell enabling input; a circuit block including a plurality of circuits, each circuit including a circuit enabling input; and a power-gating controller including a plurality of gate signal outputs. In the power-gating electronic system, each gate signal output is coupled to one of the cell enabling inputs and one of the circuit enabling inputs.

Abstract: A memory device includes a memory block including a plurality of sectors, and a control unit configured to: pre-store a plurality of first indicators in a storage unit, the plurality of first indicators respectively corresponding to a plurality of refresh units in the memory block, each refresh unit including at least one sector, and the first indicators being generated based on a first reference voltage level; and in an erase cycle for erasing a target sector of the memory block: read data from a selected one of the refresh units with a second reference voltage level; generate a second indicator for the selected refresh unit based on the data; compare one of the first indicators corresponding to the selected refresh unit with the second indicator of the selected refresh unit; and if the second indicator is not equal to the first indicator, refresh data in the selected refresh unit.

Abstract: A memory device includes a delay locked loop (DLL) circuit to receive an external clock, and delay the external clock by a DLL delay time to provide a DLL clock, an output driver to output the DLL clock as a data strobe signal, and a DLL offset control circuit configured to receive at least one of a plurality of functional statement commands, and adjust the DLL delay time based on the at least one of the functional statement commands. Each one of the DLL circuit and the output driver is selectively powered according to the at least one of the functional statement commands.

Abstract: A memory device includes a memory array including a plurality of memory cells that store data, a sense circuit coupled to the memory array for reading data stored in the memory array, a data register for storing data to be written into the memory array, a data processor, and a control unit. The data processor is configured to receive input data units to be written into the memory array, and process the input data units based on array data units stored in the memory array to generate processed data units. The control unit is configured to write the processed data units into the memory array.

Abstract: Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities.

Abstract: A memory device includes a memory array including a plurality of memory cells coupled to a plurality of bitlines and a plurality of wordlines and a plurality of sense amplifier circuits coupled to the plurality of bitlines. Each sense amplifier circuit includes a sense amplifier configured to sense and amplify a voltage difference between two of the bitlines coupled thereto. The memory device further includes an address decoder to receive and decode addresses of memory cells to enable corresponding bitlines and wordlines, a refresh controller to control data refreshing of the memory cells, and a mode controller to control the memory device to operate in different operating modes including a deep power down (DPD) mode. The mode controller controls data of a group of the memory cells, sensed by corresponding ones of the sense amplifier circuits, to be latched in the corresponding sense amplifier circuits when entering the DPD mode.

Abstract: The NAND flash memory array in a memory device may be programmed using a cache program execute technique for fast performance. The memory device includes a page buffer, which may be implemented as a cache register and a data register. Program data may be loaded to the cache register, where it may be processed by an error correction code (“ECC”) circuit. Thereafter, the ECC processed data in the cache register may be replicated to the data register and used to program the NAND flash memory array. Advantageously, immediately after the ECC processed data in the cache register is replicated to the data register, the cache register may be made available for other operations. Of particular benefit is that a second page of program data may be loaded into the cache register and ECC processed while the first page of program data is being programmed into the NAND flash memory array.

Abstract: In a flash semiconductor memory, sense and contiguous ECC coding operations are carried out over a range of VCC values without wasted time by allocating a predetermined number of clocks to the combined operations rather than to the individual operations and operating at higher frequency for high VCC values, and lower frequency for low VCC values.

Abstract: In a flash semiconductor memory, sense and contiguous ECC coding operations are carried out over a range of VCC values without wasted time by allocating a predetermined number of clocks to the combined operations rather than to the individual operations and operating at higher frequency for high VCC values, and lower frequency for low VCC values.

Abstract: An input circuit of a memory device includes an input receiver to receive an input signal, a clock receiver to receive a clock signal, a data latch, an input signal delay path coupled to the input receiver and configured to provide a delayed internal input signal to the data latch, a first clock signal delay path coupled to the clock receiver and configured to provide a first delayed internal clock signal, a second clock signal delay path coupled to the input receiver and configured to provide a second delayed internal clock signal, and a multiplexer coupled to receive and select one of the first delayed internal clock signal and the second delayed internal clock signal in response to a test mode control signal, and to provide the selected signal to the data latch.

Abstract: Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities.

Abstract: A memory device includes a memory cell array and a control unit. The memory cell array includes a plurality of memory cells arranged in rows and columns, a plurality of word lines extending in a row direction and coupled to respective rows of the memory cells, and a plurality of local bit lines extending in a column direction and coupled to respective columns of the memory cells. The control unit is configured to program a selected one of the rows of memory cells to have a predetermined pattern of digital states, couple selected ones of the local bit lines to a global bit line and couple unselected ones of the local bit lines to ground based on the predetermined pattern, apply a stress voltage to the global bit line, and after a predetermined period of time, sense the digital states of the selected row of memory cells.

Abstract: Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities.

Abstract: A page buffer suitable for continuous page read may be implemented with a partitioned data register, a partitioned cache register, and a suitable ECC circuit. The partitioned data register, partitioned cache register, and associated ECC circuit may also be used to realize a substantial improvement in the page read operation by using a modified Page Data Read instruction and/or a Buffer Read instruction, including in some implementations the use of a partition busy bit.

Abstract: Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities.

Abstract: A flash memory device may operate from two supply voltages, one being provided externally, and the other being generated within the flash memory device from the external supply voltage. The flash memory device may be provided with a selectable-level buffer for interfacing with either low supply voltage or high supply voltage integrated circuits. To provide even greater flexibility, the flash memory device may be provided with the capability of receiving a second supply voltage from an external source, which may take precedence over the internally-generated second supply voltage or may be combined with the internally-generated second supply voltage.

Abstract: The NAND flash memory array in a memory device may be programmed using a cache program execute technique for fast performance. The memory device includes a page buffer, which may be implemented as a cache register and a data register. Program data may be loaded to the cache register, where it may be processed by an error correction code (“ECC”) circuit. Thereafter, the ECC processed data in the cache register may be replicated to the data register and used to program the NAND flash memory array. Advantageously, immediately after the ECC processed data in the cache register is replicated to the data register, the cache register may be made available for other operations. Of particular benefit is that a second page of program data may be loaded into the cache register and ECC processed while the first page of program data is being programmed into the NAND flash memory array.