Abstract: A substrate includes an anchor area physically secured to a surface of the substrate and at least one printable electronic component. The at least one printable electronic component includes an active layer having one or more active elements thereon, and is suspended over the surface of the substrate by electrically conductive breakable tethers. The electrically conductive breakable tethers include an insulating layer and a conductive layer thereon that physically secure and electrically connect the at least one printable electronic component to the anchor area, and are configured to be preferentially fractured responsive to pressure applied thereto. Related methods of fabrication and testing are also discussed.

Abstract: An electronic component array includes a backplane substrate, and a plurality of integrated circuit elements on the backplane substrate. Each of the integrated circuit elements includes a chiplet substrate having a connection pad and a conductor element on a surface thereof. The connection pad and the conductor element are electrically separated by an insulating layer that exposes at least a portion of the connection pad. At least one of the integrated circuit elements is misaligned on the backplane substrate relative to a desired position thereon. A plurality of conductive wires are provided on the backplane substrate including the integrated circuit elements thereon, and the connection pad of each of the integrated circuit elements is electrically connected to a respective one of the conductive wires notwithstanding the misalignment of the at least one of the integrated circuit elements. Related fabrication methods are also discussed.

Abstract: Methods of forming integrated circuit devices include forming a sacrificial layer on a handling substrate and forming a semiconductor active layer on the sacrificial layer. The semiconductor active layer and the sacrificial layer may be selectively etched in sequence to define an semiconductor-on-insulator (SOI) substrate, which includes a first portion of the semiconductor active layer. A multi-layer electrical interconnect network may be formed on the SOI substrate. This multi-layer electrical interconnect network may be encapsulated by an inorganic capping layer that contacts an upper surface of the first portion of the semiconductor active layer. The capping layer and the first portion of the semiconductor active layer may be selectively etched to thereby expose the sacrificial layer.

Abstract: A structure with an interconnection layer for redistribution of electrical connections includes a plurality of first electrical connections disposed on a substrate in a first arrangement. An insulating layer is disposed on the substrate over the first electrical connections. A plurality of second electrical connections is disposed on the insulating layer on a side of the insulating layer opposite the plurality of first electrical connections in a second arrangement. Each second electrical connection is electrically connected to a respective first electrical connection. An integrated circuit is disposed on the substrate and is electrically connected to the first electrical connections. The first electrical connections in the first arrangement have a greater spatial density than the second electrical connections in the second arrangement.

Abstract: A method for producing a plurality of semiconductor components and a semiconductor component are disclosed. In an embodiment the method includes applying a semiconductor layer sequence on a substrate, structuring the semiconductor layer sequence by forming trenches thereby separating the semiconductor layer sequence into a plurality of semiconductor bodies and applying an insulating layer covering the trenches and vertical surfaces of the plurality of semiconductor bodies. The method further includes forming a plurality of tethers by structuring the insulating layer in regions covering the trenches, locally detaching the substrate from the plurality of semiconductor bodies, wherein the tethers remain attached to the substrate and selectively picking up each semiconductor body by separating the tethers from the substrate, wherein each semiconductor body comprises a portion of the semiconductor layer sequence.

Abstract: According to an embodiment, a crystalline color-conversion device includes an electrically driven first light emitter, for example a blue or ultraviolet LED, for emitting light having a first energy in response to an electrical signal. An inorganic solid single-crystal direct-bandgap second light emitter having a bandgap of a second energy less than the first energy is provided in association with the first light emitter. The second light emitter is electrically isolated from, located in optical association with, and physically connected to the first light emitter so that in response to the electrical signal the first light emitter emits first light that is absorbed by the second light emitter and the second light emitter emits second light having a lower energy than the first energy.

Abstract: A device comprises a destination substrate; a multilayer structure on the destination substrate, wherein the multilayer structure comprises a plurality of printed capacitors stacked on top of each other with an offset between each capacitor along at least one edge of the capacitors; and wherein each printed capacitor includes a plurality of electrically connected capacitors. Each printed capacitor of the plurality of printed capacitors can be a horizontal or a vertical capacitor. Each printed capacitor can include a plurality of capacitor layers, each capacitor layer including a plurality of electrically connected capacitors.

Abstract: A semiconductor chip for measuring a magnetic field. The semiconductor chip comprises a magnetic sensing element, and an electronic circuit. The magnetic sensing element is mounted on the electronic circuit. The magnetic sensing element is electrically connected with the electronic circuit. The electronic circuit is produced in a first technology and/or first material and the magnetic sensing element is produced in a second technology and/or second material different from the first technology/material.

Abstract: An inorganic-light-emitter display includes a display substrate and a plurality of spatially separated inorganic light emitters distributed on the display substrate in a light-emitter layer. A light-absorbing layer located on the display substrate in the light-emitter layer is in contact with the inorganic light emitters. Among other things, the disclosed technology provides improved angular image quality by avoiding parallax between the light emitters and the light-absorbing material, increased light-output efficiency by removing the light-absorbing material from the optical path, improved contrast by increasing the light-absorbing area of the display substrate, and a reduced manufacturing cost in a mechanically and environmentally robust structure using micro transfer printing.

Abstract: A self-compensating circuit for controlling pixels in a display includes a plurality of light-emitter circuits. Each light-emitter circuit includes a light emitter, a drive transistor, and a compensation circuit. The compensation circuit is connected to the light emitter of one or more different light-emitter circuits.

Abstract: An active-matrix touchscreen includes a substrate, a system controller, and a plurality of spatially separated independent touch elements disposed on the substrate. Each touch element includes a touch sensor and a touch controller circuit that provides one or more sensor-control signals to the touch sensor and receives a sense signal responsive to the sensor-control signals from the touch sensor. Each touch sensor operates independently of any other touch sensor.

Abstract: The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

Abstract: A repairable matrix-addressed system includes a system substrate, an array of electrically conductive row lines, and an array of electrically conductive column lines disposed over the system substrate. The row lines extend over the system substrate in a row direction and the column lines extend over the system substrate in a column direction different from the row direction to define an array of non-electrically conductive intersections between the row lines and the column lines. An array of electrically conductive line segments is disposed over the system substrate. The line segments extend over the system substrate substantially parallel to the row direction and have a line segment length that is less than the distance between adjacent column lines. Each line segment is electrically connected to a column line. One or more devices are electrically connected to each row line and to each line segment adjacent to the row line.

Abstract: A method for producing a plurality of semiconductor components and a semiconductor component is disclosed. In some embodiment, the method includes forming a semiconductor layer sequence, structuring the semiconductor layer sequence by forming trenches thereby structuring semiconductor bodies, applying an auxiliary substrate on the semiconductor layer sequence, so that the semiconductor layer sequence is arranged between the auxiliary substrate and the substrate and removing the substrate from the semiconductor layer sequence.

Abstract: The disclosed technology relates generally to a method and system for micro assembling GaN materials and devices to form displays and lighting components that use arrays of small LEDs and high-power, high-voltage, and or high frequency transistors and diodes. GaN materials and devices can be formed from epitaxy on sapphire, silicon carbide, gallium nitride, aluminum nitride, or silicon substrates. The disclosed technology provides systems and methods for preparing GaN materials and devices at least partially formed on several of those native substrates for micro assembly.

Abstract: A display tile structure includes a tile layer with opposing emitter and backplane sides. A light emitter having first and second electrodes for conducting electrical current to cause the light emitter to emit light is disposed in the tile layer. First and second electrically conductive tile micro-wires and first and second conductive tile contact pads are electrically connected to the first and second tile micro-wires, respectively. The light emitter includes a plurality of semiconductor layers and the first and second electrodes are disposed on a common side of the semiconductor layers opposite the emitter side of the tile layer. The first and second tile micro-wires and first and second tile contact pads are disposed on the backplane side of the tile layer.

Abstract: The disclosed technology relates generally hybrid displays with pixels that include both inorganic light emitting diodes (ILEDs) and organic light emitting diodes (OLEDs). The disclosed technology provides a hybrid display that uses a mixture of ILEDs and OLEDs in each pixel. In certain embodiments, each pixel in the hybrid display includes a red ILED, a blue ILED, and a green OLED. In this instance, the OLED process would not require a high resolution shadow mask, thereby enhancing the manufacturability of OLEDs for larger format displays. Additionally, the OLED process in this example would not require any fine lithography. The OLED subpixel (e.g., green subpixel) can be larger and the ILEDs can be small (e.g., micro-red and micro-blue ILEDs). The use of small ILEDs allows for other functions to be added to the pixel, such as micro sensors and micro integrated circuits.

Abstract: A stamp for micro-transfer printing includes a body and one or more posts extending from the body. At least one of the posts has a non-planar surface contour on the distal end of the post having a size, shape, or size and shape that accommodates a non-planar contact surface of a micro-transfer printable device.

Abstract: The disclosed technology provides micro-assembled micro-LED displays and lighting elements using arrays of micro-LEDs that are too small (e.g., micro-LEDs with a width or diameter of 10 ?m to 50 ?m), numerous, or fragile to assemble by conventional means. The disclosed technology provides for micro-LED displays and lighting elements assembled using micro-transfer printing technology. The micro-LEDs can be prepared on a native substrate and printed to a display substrate (e.g., plastic, metal, glass, or other materials), thereby obviating the manufacture of the micro-LEDs on the display substrate. In certain embodiments, the display substrate is transparent and/or flexible.

Abstract: The disclosed technology provides micro-assembled micro-LED displays and lighting elements using arrays of micro-LEDs that are too small (e.g., micro-LEDs with a width or diameter of 10 ?m to 50 ?m), numerous, or fragile to assemble by conventional means. The disclosed technology provides for micro-LED displays and lighting elements assembled using micro-transfer printing technology. The micro-LEDs can be prepared on a native substrate and printed to a display substrate (e.g., plastic, metal, glass, or other materials), thereby obviating the manufacture of the micro-LEDs on the display substrate. In certain embodiments, the display substrate is transparent and/or flexible.