Abstract: A substrate cleaning device includes a double-sided scrubber that directs a liquid to a substrate as it moves back-and-forth between a pair of rotating brushes. The device may also include a first set of nozzles and a second set of nozzles. The first set of nozzles may be configured to spray a first liquid at an interface between the substrate and rotating brushes and the second set of nozzles may be configured to spray a second liquid at the interface as the substrate moves back-and-forth between the pair of rotating brushes.

Abstract: A system and a method of wet processing includes receiving real-time signals indicative of one or more of a pH, a temperature, and an electrical conductivity of a liquid chemical in a wet processing tank, and determining values of one or more of a composition, a flow rate, and the temperature of the liquid chemical that will improve or maintain an etch rate of the liquid chemical in the wet processing tank. One or more of the composition, the flow rate, and the temperature of the liquid chemical in the wet processing tank may then be adjusted to the determined values.

Abstract: A carrier configured to support multiple panels includes a housing having a pair of opposing sidewalls extending in a first direction and a plurality of trays stacked between the pair of opposing sidewalls in the first direction. A lid is slidably coupled to the pair of opposing sidewalls and configured to be slid on the housing between an open configuration and a closed configuration. The plurality of trays are supported in the housing such that, in the closed configuration of the lid, two trays of the plurality of trays are blocked from moving relative to one another in the first direction, and in the open configuration of the lid, the two trays are configured to be moved relative to one another in the first direction.

Abstract: An apparatus for wet chemical processing includes a processing tank that configured to contain a liquid chemical composition and support a plurality of substrates in the liquid chemical composition. A flow plate may be disposed in the processing tank below the plurality of substrates. The flow plate may include a plurality of liquid nozzles configured to direct the liquid chemical composition into the tank and a plurality of gas outlets configured to direct a gas into the tank.

Abstract: An apparatus for removing a coating from a substrate comprises a nozzle with an inner conduit having an orifice and an outer conduit coaxially arranged about the inner conduit and defining an annular opening between the inner and outer conduits. The nozzle is configured to direct a liquid stream through the orifice toward the coated surface and direct a gas flow through the annular opening such that the gas flow surrounds the liquid stream as the liquid stream moves towards the coated surface.

Abstract: An apparatus to separate a wafer from a pre-sliced boule of wafers may include a conveyor configured to move the pre-sliced boule of wafers from a first end to a second end. A lift yoke, positioned proximate the second end, may include a wafer slot configured to receive a first wafer of the pre-sliced boule therein when the pre-sliced boule is positioned at the second end. A pusher blade may be configured to raise the lift yoke along with the first wafer positioned in its wafer slot from a first position to a second position. The wafer slot may be vertically aligned with the conveyor at the first position and the wafer slot may be positioned above the conveyor in the second position.

Abstract: An electronic device having a substrate with a metal structure, a mono-layer coating of a selected silane composition on a surface of the metal structure, and an organic layer on the mono-layer coating, wherein the mono-layer coating improves the interfacial adhesion strength between the metal surface and the organic material.

Abstract: A method of removing a coating from a substrate comprises positioning a nozzle of an apparatus such that a longitudinal axis of a distal end of the nozzle is inclined at an angle ? with a coated surface of the substrate. The nozzle including an inner conduit having an orifice and an outer conduit coaxially arranged about the inner conduit and defining an annular opening between the inner and outer conduits. Directing a liquid stream through the orifice toward the coated surface and directing a gas flow through the annular opening such that the gas flow surrounds the liquid stream, and impinging the liquid stream on the coated surface.

Abstract: A substrate handling device may include a central hub configured to coupled to a rotatable shaft that extends along a central axis of a process chamber. The rotatable shaft may be configured to rotate in the process chamber about the central axis and translate in the process chamber along the central axis. A plurality of radially extending arms may be configured to removably coupled to the central hub. The substrate handling device may include a plurality of substrate supports removably coupled to the plurality of arms and configured to support the substrate. The substrate handling device may also include a plurality of end retainers removably coupled to the plurality of arms.

Abstract: A coating removal apparatus includes multiple pairs of rotatable brushes spaced apart from each other in a first direction. Each pair of brushes may include two opposing brushes that are configured to rotate about a common axis and move towards and away from each other in a second direction transverse to the first direction. When a coated panel is positioned between the two opposing brushes, first portions of the brushes may separably engage with and rotate on opposite surfaces of the coated panel. The apparatus may also include one or more liquid tanks configured to contain a liquid. When the tanks contain the liquid and when the coated panel is positioned between the two opposing brushes, second portions of the two brushes may at least contact the liquid in the liquid tanks.

Abstract: A heating unit includes a base plate and a cover plate. A passage extends through base plate such that a conduit is defined between base plate and cover plate. A first set of heaters is disposed on a side of base plate opposite passage and a second set of heaters is disposed on a side of cover plate opposite passage.

Abstract: A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.

Abstract: A semiconductor processing apparatus includes a process chamber that defines an enclosure. The enclosure includes a substrate support configured to support a substrate and rotate the substrate about a central axis of the process chamber. The substrate support is also configured to move vertically along the central axis and position the substrate at multiple locations in the enclosure. The apparatus also includes one or more UV lamps configured to irradiate a top surface of the substrate supported on the substrate support.

Abstract: A batch processing oven includes a processing chamber, a magnet, and a rack. The processing chamber includes a gas inlet on a first side and a gas outlet on a second side opposite the first side, the gas inlet is configured to direct a hot gas into the processing chamber and the gas outlet is configured to exhaust the convective energy in parallel with the radiative energy from the walls. The magnet is arranged such that its north pole will be formed on the first side of the processing chamber and its south pole will be formed on the second side of the processing chamber. The rack is configured to be positioned between the first and second ends of the processing chamber and is configured to support a plurality of vertically spaced-apart substrates.

Abstract: A method of using a processing oven may include disposing at least one substrate in a chamber of the oven and activating a lamp assembly disposed above them to increase their temperature to a first temperature. A chemical vapor may be admitted into the chamber above the at least one substrate and an inert gas may be admitted into the chamber below the at least one substrate. The temperature of the at least one substrate may then be increased to a second temperature higher than the first temperature and then cooled down.

Abstract: A process chamber system adapted for both vacuum process steps and steps at pressures higher than atmospheric pressure. The chamber door may utilize a double door seal which allows for high vacuum in the gap between the seals such that the sealing force provided by the high vacuum in the seal gap is higher than the opposing forces due to the pressure inside the chamber and the weight of the components.

Abstract: A batch processing oven comprising a processing chamber and a rack configured to be positioned in the processing chamber. The rack is configured to support a plurality of substrates and a plurality of panels in a stacked manner such that one or more substrates of the plurality of substrates are positioned between at least one pair of adjacent panels of the plurality panels. Vertical gaps separate each substrate of the one or more substrates from an adjacent substrate or panel on either side of the substrate.

Abstract: A solder reflow oven may include a reflow chamber and a plurality of vertically spaced apart wafer-support plates positioned in the reflow chamber. A plurality of semiconductor wafers each including a solder are configured to be disposed in the reflow chamber such that each semiconductor wafer is disposed proximate to, and vertically spaced apart from, a wafer-support plate. Each wafer-support plate may include at least one of liquid-flow channels or resistive heating elements. A control system control the flow of a hot liquid through the channels or activate the heating elements to heat a wafer to a temperature above the solder reflow temperature.

Abstract: A device and method of spreading plasma which allows for plasma etching over a larger range of process chamber pressures. A plasma source, such as a linear inductive plasma source, may be choked to alter back pressure within the plasma source. The plasma may then be spread around a deflecting disc which spreads the plasma under a dome which then allows for very even plasma etch rates across the surface of a substrate. The apparatus may include a linear inductive plasma source above a plasma spreading portion which spreads plasma across a horizontally configured wafer or other substrate. The substrate support may include heating elements adapted to enhance the etching.

Abstract: A process chamber system adapted for both vacuum process steps and steps at pressures higher than atmospheric pressure. The chamber door may utilize a double door seal which allows for high vacuum in the gap between the seals such that the sealing force provided by the high vacuum in the seal gap is higher than the opposing forces due to the pressure inside the chamber and the weight of the components.