Abstract: A process chamber system adapted for both vacuum process steps and steps at pressures higher than atmospheric pressure. The chamber door may utilize a double door seal which allows for high vacuum in the gap between the seals such that the sealing force provided by the high vacuum in the seal gap is higher than the opposing forces due to the pressure inside the chamber and the weight of the components.

Abstract: A process for the drying, and subsequent imidization, of polyimide precursors which minimizes or eliminates voids and which minimizes or eliminates discoloration. The process uses a sequential set of descending pressure operations that allow for time efficient processing of wafers. The set of descending pressure operations are interspersed with evacuation processes using heated gasses, which combine heating and byproduct evacuation. The process results in layers with reduced or eliminated voiding, discoloration, and solvent retention.

Abstract: A process for the drying, and subsequent imidization, of polyimide precursors which minimizes or eliminates voids and which minimizes or eliminates discoloration. The process uses a sequential set of descending pressure operations that allow for time efficient processing of wafers. The set of descending pressure operations are interspersed with evacuation processes using heated gasses, which combine heating and byproduct evacuation. The process results in layers with reduced or eliminated voiding, discoloration, and solvent retention.

Abstract: A process for the coating of substrates comprising insertion of a substrate into a process oven, plasma cleaning of the substrate, rehydration of the substrate, dehydration of the substrate, withdrawal of a metered amount of one or more chemicals from one or more chemical reservoirs, vaporizing the withdrawn chemicals in one or more vapor chambers, and transfer of the vaporized chemicals into a process oven, thereby reacting with the substrate. An apparatus for the coating of substrates comprising a process oven, a gas plasma generator, a metered chemical withdrawal subsystem, and a vaporization subsystem.

Abstract: A process for the coating of substrates comprising insertion of a substrate into a process oven, plasma cleaning of the substrate, dehydration of the substrate, withdrawal of a metered amount of one or more chemicals from one or more chemical reservoirs, vaporizing the withdrawn chemicals in one or more vapor chambers, and transfer of the vaporized chemicals into a process oven, thereby reacting with the substrate. An apparatus for the coating of substrates comprising a process oven, a gas plasma generator, a metered chemical withdrawal subsystem, and a vaporization subsystem.

Abstract: A process for the coating of substrates comprising insertion of a substrate into a process oven, dehydration of the substrate, withdrawal of a metered amount of one or more chemicals from one or more chemical reservoirs, vaporizing the withdrawn chemicals in one or more vapor chambers, and transfer of the vaporized chemicals into a process oven, thereby reacting with the substrate. An apparatus for the coating of substrates comprising a process oven, a metered chemical withdrawal subsystem, and a vaporization subsystem.

Abstract: A plasma cleaning apparatus for cleaning lead frames or other items comprised of a chamber adapted for containing a plasma, a magazine positioned in the chamber for holding the lead frames, a first active electrode positioned in the chamber on one side of the magazine and a second active electrode positioned in the chamber on the other side of the magazine. A first grounded electrode is positioned between the first active electrode and the magazine and a second grounded electrode is positioned between the second active electrode and the magazine. The magazine is held at the same voltage as the first and second active electrodes and a plasma is generated which extends from the first active electrode to the second active electrode.

Abstract: An oven for processing semiconductor wafers comprised of a first cylindrical canister, a second cylindrical canister that surrounds the first canister, and a third cylindrical canister that surrounds the second canister. The first canister is comprised of thin stainless steel so that it can be heated and cooled rapidly by band heaters positioned around its exterior. The second canister is comprised of stainless that it thermally insulates the first canister. The third canister is comprised of stainless steel that is thicker than the second canister so that the third canister can hold a sufficient vacuum for processing the wafers.

Abstract: A method and apparatus for heating semiconductor wafers characterized by the release of preheated nitrogen into an oven to considerably reduce heating time for the wafers. The oven is evacuated prior to the release of the preheated nitrogen.