Patents Assigned to Zena Technologies, Inc.
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Publication number: 20120001284Abstract: Various embodiments for etching of silicon nitride (SixNy) lightpipes, waveguides and pillars, fabricating photodiode elements, and integration of the silicon nitride elements with photodiode elements are described. The results show that the quantum efficiency of the photodetectors (PDs) can be increased using vertical silicon nitride vertical waveguides.Type: ApplicationFiled: December 13, 2010Publication date: January 5, 2012Applicants: PRESIDENT AND FELLOWS OF HARVARD COLLEGE, ZENA TECHNOLOGIES, INC.Inventors: Turgut TUT, Peter Duane, Young-June Yu, Winnie N. Ye, Munib Wober, Kenneth B. Crozier
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Publication number: 20110315988Abstract: Described herein is a device comprising: a substrate; one or more of a nanostructure extending essentially perpendicularly from the substrate; wherein the nanostructure comprises a core of a doped semiconductor, an first layer disposed on the core, and a second layer of an opposite type from the core and disposed on the first layer.Type: ApplicationFiled: May 12, 2011Publication date: December 29, 2011Applicant: ZENA TECHNOLOGIES, INC.Inventors: Young-June Yu, Munib Wober
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Publication number: 20110309237Abstract: A nanowire array is described herein. The nanowire array comprises a substrate and a plurality of nanowires extending essentially vertically from the substrate; wherein: each of the nanowires has uniform chemical along its entire length; a refractive index of the nanowires is at least two times of a refractive index of a cladding of the nanowires. This nanowire array is useful as a photodetector, a submicron color filter, a static color display or a dynamic color display.Type: ApplicationFiled: October 22, 2010Publication date: December 22, 2011Applicants: PRESIDENT AND FELLOWS OF HARVARD COLLEGE, ZENA TECHNOLOGIES, INC.Inventors: Kwanyong SEO, Munib Wober, Paul Steinvurzel, Ethan Schonbrun, Yaping Dan, Kenneth B. Crozier
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Publication number: 20110309240Abstract: Described herein is a device operable to detect polarized light comprising: a substrate; a first subpixel; a second subpixel adjacent to the first subpixel; a first plurality of features in the first subpixel and a second plurality of features in the second subpixel, wherein the first plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a first direction parallel to the substrate and the second plurality of features extend essentially perpendicularly from the substrate and extend essentially in parallel in a second direction parallel to the substrate; wherein the first direction and the second direction are different; the first plurality of features and the second plurality of features react differently to the polarized light.Type: ApplicationFiled: March 14, 2011Publication date: December 22, 2011Applicant: ZENA TECHNOLOGIES, INC.Inventors: Young-June YU, Munib Wober
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Publication number: 20110309233Abstract: Methods, apparatuses, systems, and devices relating to fabricating one or more nanowires are disclosed. One method for fabricating a nanowire includes: selecting a particular wavelength of electromagnetic radiation for absorption for a nanowire; determining a diameter corresponding to the particular wavelength; and fabricating a nanowire having the determined diameter. According to another embodiment, one or more nanowires may be fabricated in an array, each having the same or different determined diameters. An image sensor and method of imaging using such an array are also disclosed.Type: ApplicationFiled: December 13, 2010Publication date: December 22, 2011Applicants: PRESIDENT AND FELLOWS OF HARVARD COLLEGE, ZENA TECHNOLOGIES, INC.Inventors: Kwanyong SEO, Paul Steinvurzel, Ethan Schonbrun, Munib Wober, Kenneth B. Crozier
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Publication number: 20110309331Abstract: Described herein is device configured to be a solar-blind UV detector comprising a substrate; a plurality of pixels; a plurality of nanowires in each of the plurality of pixel, wherein the plurality of nanowires extend essentially perpendicularly from the substrate.Type: ApplicationFiled: March 15, 2011Publication date: December 22, 2011Applicant: ZENA TECHNOLOGIES, INC.Inventors: Young-June Yu, Munib WOBER
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Publication number: 20110226937Abstract: A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate, one or more recesses between the structures, each recess having a planar mirror on a bottom wall thereof. The structures have p-n or p-i-n junctions for converting light into electricity. The planar mirrors function as an electrode and can reflect light incident thereon back to the structures to be converted into electricity.Type: ApplicationFiled: November 12, 2010Publication date: September 22, 2011Applicant: ZENA TECHNOLOGIES, INC.Inventors: Young-June YU, Munib WOBER
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Publication number: 20110133160Abstract: An embodiment relates to a device comprising a substrate, a nanowire and a doped epitaxial layer surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire. Another embodiment relates to a device comprising a substrate, a nanowire and one or more photogates surrounding the nanowire, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire, and wherein the one or more photogates comprise an epitaxial layer.Type: ApplicationFiled: December 8, 2009Publication date: June 9, 2011Applicant: ZENA TECHNOLOGIES, INC.Inventors: Young-June YU, Munib Wober
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Publication number: 20110133060Abstract: An imaging device formed as an active pixel array combining a CMOS fabrication process and a nanowire fabrication process. The pixels in the array may include a single or multiple photogates surrounding the nanowire. The photogates control the potential profile in the nanowire, allowing accumulation of photo-generated charges in the nanowire and transfer of the charges for signal readout. Each pixel may also include a readout circuit which may include a reset transistor, a charge transfer switch transistor, source follower amplifier, and pixel select transistor. A nanowire is generally structured as a vertical rod on the bulk semiconductor substrate to receive the light energy impinging onto the tip of the nanowire. The nanowire may be configured to function as either a photodetector or a waveguide configured to guild the light beam to the bulk substrate. In the embodiments herein, with the presence of the nanowire photogate and a substrate photogate, light of different wavelengths can be detected.Type: ApplicationFiled: December 8, 2009Publication date: June 9, 2011Applicant: ZENA TECHNOLOGIES, INC.Inventors: Young-June Yu, Munib Wober
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Publication number: 20110136288Abstract: An embodiment relates to a method of manufacturing a device comprising a substrate having a front side and a back-side, a nanowire disposed on the back-side and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.Type: ApplicationFiled: December 8, 2009Publication date: June 9, 2011Applicant: ZENA TECHNOLOGIES, INC.Inventors: Peter DUANE, Young-June Yu, Munib Wober
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Publication number: 20110133061Abstract: An embodiment relates to a device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a nanowire disposed on the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.Type: ApplicationFiled: December 8, 2009Publication date: June 9, 2011Applicant: ZENA TECHNOLOGIES, INC.Inventors: Young-June YU, Munib Wober
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Publication number: 20110115041Abstract: Embodiments relate to methods and devices comprising an optical pipe comprising a core and a cladding. An embodiment includes obtaining a substrate comprising a photodiode and a first protective layer, the first protective layer having a predetermined thickness and growing a nanowire having a length L on the photodiode, wherein the length L is greater than the predetermined thickness of the protective layer. Another embodiment includes (1) obtaining a substrate comprising a photodiode and a protective layer, (2) fabricating a nanowire light pipe on the photodiode, the light pipe comprising a nanowire core and a cladding; and (3) coating the substrate and the nanowire light pipe with a protective coating.Type: ApplicationFiled: November 19, 2009Publication date: May 19, 2011Applicants: ZENA TECHNOLOGIES, INC., PRESIDENT AND FELLOWS OF HARVARD COLLEGEInventors: Yaping Dan, Munib Wober, Kenneth B. Crozier
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Publication number: 20110079704Abstract: An imaging device including a plurality of photo-sensitive elements suitable for imaging small objects less than 500 nm in size. Each of the photo-sentive elements forms a passive pixel which comprises at least one nanowire structured photodetector and a switch transistor. The nanowire structured photodetector is configured to receive the photons and store the photo generated charges and behave as a waveguide. The switch transistor is formed either in the substrate or at the same body of the nanowire and is configured to allow photo-genereated charges in the nanowire to accumulate when off and to drain from the nanowire when on. The pixel array is configured to allow high resolution imaging by arranging in a penny round pattern.Type: ApplicationFiled: October 7, 2009Publication date: April 7, 2011Applicant: ZENA TECHNOLOGIES, INC.Inventors: Young-June YU, Munib Wober
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Publication number: 20110079796Abstract: An embodiment relates to a nanowire-containing LED device with optical feedback comprising a substrate, a nanowire protruding from a first side the substrate, an active region to produce light, a optical sensor and a electronic circuit, wherein the optical sensor is configured to detect at least a first portion of the light produced in the active region, and the electronic circuit is configured to control an electrical parameter that controls a light output of the active region. Yet, another embodiment relates to an image display having the nanowire-containing LED device with optical feedback.Type: ApplicationFiled: October 5, 2009Publication date: April 7, 2011Applicant: ZENA TECHNOLOGIES, INC.Inventor: Munib WOBER
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Publication number: 20100308214Abstract: An embodiment relates to image sensor comprising one or more nanowires on a substrate of a cavity, the nanowire being configured to transmit a first portion of an electromagnetic radiation beam incident on the sensor, and the substrate that absorbs a second portion of the electromagnetic radiation beam incident on the sensor, wherein the first portion is substantially different from the second portion. The substrate could have a anti-reflective material. The ratio of a diameter of the cavity to a diameter of the nanowire could be at less than about 10.Type: ApplicationFiled: June 4, 2009Publication date: December 9, 2010Applicant: ZENA TECHNOLOGIES, INC.Inventor: Munib Wober
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Publication number: 20100304061Abstract: Methods, apparatuses, systems, and devices relating to the fabrication of features for semiconductor devices are disclosed. The features may include vias and pillars. In some implementations, the vias may define light pipes for semiconductor image sensor devices that serve to guide electromagnetic radiation directly down to photodiodes or other radiation detecting elements formed on an underlying silicon substrate. These structures significantly improve the light collection efficiency and reduce the scattering and crosstalk losses in the dielectric layer. An etch mask may be used to produce features through a subsequent etching process. More specifically, the etch mask defines sidewalls in the glass layer, provides excellent dry etch resistance, and enables easy lift-off of the etch mask from the glass layer. Two embodiments are disclosed herein: the first using amorphous silicon as the etch mask; and the second employing a photoresist as the etch mask.Type: ApplicationFiled: May 26, 2009Publication date: December 2, 2010Applicants: ZENA TECHNOLOGIES, INC., PRESIDENT AND FELLOWS OF HARVARD COLLEGEInventors: Winnie N. Ye, Kenneth B. Crozier, Peter Duane, Munib Wober
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Publication number: 20100302440Abstract: Methods of optimizing the diameters of nanowire photodiode light sensors. The method includes comparing the response of nanowire photodiode pixels having predetermined diameters with standard spectral response curves and determining the difference between the spectral response of the photodiode pixels and the standard spectral response curves. Also included are nanowire photodiode light sensors with optimized nanowire diameters and methods of scene reconstruction.Type: ApplicationFiled: May 26, 2009Publication date: December 2, 2010Applicant: ZENA TECHNOLOGIES, INC.Inventor: Munib Wober
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Publication number: 20100163714Abstract: An embodiment relates to an image sensor comprising (a) a optical pipe comprising a core and a cladding, and (b) a pair of photosensitive elements comprising a central photosensitive element and a peripheral photosensitive element, wherein the central photosensitive element is operably coupled to the core and the peripheral photosensitive element is operably coupled to the cladding, and methods of fabricating and using the same. The image sensor could further comprise a lens structure or an optical coupler or an optical coupler over the optical pipe, wherein the lens structure or the optical coupler or the optical coupler is operably coupled to the optical pipe.Type: ApplicationFiled: December 29, 2009Publication date: July 1, 2010Applicant: ZENA TECHNOLOGIES, INC.Inventor: Munib WOBER
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Publication number: 20100148221Abstract: An embodiment relates to a device comprising a nanowire photodiode comprising a nanowire and at least on vertical photogate operably coupled to the nanowire photodiode.Type: ApplicationFiled: December 8, 2009Publication date: June 17, 2010Applicant: ZENA TECHNOLOGIES, INC.Inventors: Young-June Yu, Munib Wober, Thomas P.H.F. Wendling
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Publication number: 20100116976Abstract: An embodiment relates to a device comprising an optical pipe comprising a core and a cladding, the optical pipe being configured to separate wavelengths of an electromagnetic radiation beam incident on the optical pipe at a selective wavelength through the core and the cladding, wherein the core is configured to be both a channel to transmit the wavelengths up to the selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the core. Other embodiments relate to a compound light detector.Type: ApplicationFiled: November 13, 2008Publication date: May 13, 2010Applicant: Zena Technologies, Inc.Inventor: Munib Wober