Abstract: The present invention provides a method and an apparatus of monocrystal growth. The method comprises providing an apparatus comprising a crucible, a first lifting device for lifting the crucible, a deflector tube and a second lifting device for lifting the deflector tube; setting a theoretical distance between the deflector tube and the melt surface, determining a theoretical ratio of the crucible lifting rate relative to the monocrystal lifting rate based on sizes of the crucible and the monocrystal, and starting to grow the monocrystal. During the growth, the position of one or more of the crucible, the deflector tube and the monocrystal is adjusted, the actual distance between the deflector tube and the melt surface is real-time detected, the deviation value between the theoretical and the actual distances is calculated, a variation of the ratio is obtained by the deviation value, and the theoretical ratio is adjusted based on the variation.

Abstract: The invention provides a measuring method of resistivity of a wafer, comprising: choosing a wafer to be measured, conducting a thermal treatment for the wafer to remove a thermal doner in the wafer, conducting an oxidation process for the wafer to form an oxidized surface on the wafer, and measuring resistivity of the wafer. In the method, firstly, the wafer is oxidized to get the oxidized surface, so as to restrict surface variation when placing the wafer in a later process. Therefore, the resistivity measurement of the wafer surface only slightly varies.

Abstract: The present application provides a method for verification of conductivity type of a silicon wafer. The method comprises measuring the resistivity of the silicon wafer to obtain a first resistivity, placing the silicon wafer under atmosphere of air for a predicted time period, measuring the resistivity of the silicon wafer to obtain a second resistivity, and determining conductivity type of the silicon wafer by comparing the first resistivity and the second resistivity. The method can be applied to a silicon wafer having a high resistivity such as higher than 500 ohm-cm to rapidly and accurately determine conductivity type of the silicon wafer. Advantages of the method of the present application include accurate test results, easy operation, simple device requirement, and reduced cost.

Abstract: The invention provides a method for positioning a wafer and a semiconductor manufacturing apparatus, which are applied to thin film processes. The method includes: Step S1: Obtain the state distribution of the first surface of the first wafer after the thin film process is performed on the first wafer, wherein the first surface is the surface opposite to a surface that the thin film formed thereon in the thin film process; Step S2: Determine whether the first wafer is located at the ideal positioning center according to the state distribution of the first surface, when the first wafer is not located at the ideal positioning center, according to the state distribution of the first surface adjusts the positioning position of the second wafer to be subjected to the thin film process, so that the second wafer is positioned at the ideal positioning center during the thin film process.

Abstract: The invention provides a semiconductor crystal growth device comprising a furnace body; a crucible; a pulling device; a horizontal magnetic field applying device; and a deflector, being barrel-shaped and disposed above the silicon melt in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot through the deflector in the vertical direction; wherein the bottom of the deflector has different thermal reflection coefficients at different positions, and the thermal reflection coefficient of the bottom of the deflector in the direction of the horizontal magnetic field is smaller than that in the direction perpendicular to the horizontal magnetic field. According to the semiconductor crystal growth device of the present invention, the temperature distribution inside the melt silicon and quality of the semiconductor crystal are improved.

Abstract: The invention provides a method of detecting crystallographic defects, comprising: sampling wafer of an ingot in complying with a predetermined wafer sampling frequency; identifying crystallographic defects of the wafer to show the crystallographic defects of the wafer; characterizing observation of the crystallographic defects of the wafer and extracting a value characterizing the crystallographic defects; through a result of characterizing the crystallographic defects, obtaining a radial distribution of density of the wafer and categorizing the crystallographic defects; and obtaining an isogram of the crystallographic defects of the wafer to show a crystallographic defect distribution of the whole ingot according to the value characterizing the crystallographic defects and categories of the crystallographic defects.

Abstract: The present invention provides a polishing pad, a polishing apparatus and a polishing method for a silicon wafer. The polishing pad comprises a polishing surface in contact with the silicon wafer. The polishing surface is provided with at least one groove. When polishing the silicon wafer, the edge of the silicon wafer is at least partially suspended above the groove. The polishing pad, polishing apparatus and silicon wafer polishing method according to the present invention can reduce the polishing rate at the edge of the silicon wafer while keeping the polishing rate of the entire wafer basically unchanged, thereby improving the flatness of the edge thickness of the silicon wafer as well as improving the production yield.

Abstract: The present application provides a method for characterizing defects in silicon crystal comprising the following steps: etching a surface of the silicon crystal to remove a predicted thickness of the silicon crystal; conducting a LLS scanning to a surface of the etched silicon crystal to obtain a LLS map of the surface, a LSE size of defects, and defect bulk density; based on at least one of the LLS map of the surface, the LSE size of defects and the defect bulk density, determining a type of defect existing in the silicon crystal and/or a defect zone of each type of defect on the surface. By applying the method, the characterizing period and the characterizing cost can be reduced, plural defects such as vacancy, oxygen precipitate and dislocation can be characterized simultaneously, the characterizing accuracy can be enhanced, and the defect type and the defect zone can be determined with high reliability.

Abstract: A method of making a silicon on insulator structure comprises: providing a bonded structure, the bonded structure comprises the first substrate, the second substrate and the insulating buried layer, the insulating buried layer is positioned between the first substrate and the second substrate; peeling off a layer of removing region of the first substrate from the bonded structure to obtain a first film; at a first temperature, performing a first etching to etch the first film to remove a first thickness of the first film; at a second temperature, performing a second etching to etch the first film to planarize the first film and remove a second thickness of the first film, the first temperature being lower than the second temperature, the first thickness being greater than the second thickness, and a sum of the first thickness and the second thickness being a total etching thickness of the first film.

Abstract: The present application provides an apparatus and a method for ingot growth. The apparatus for ingot growth comprises a growth furnace, a crucible, a heater, a lifting mechanism, an infrared detector, a dividing disc, a sensor and a control device. The crucible is located within the growth furnace. The lifting mechanism comprises a lifting wire and a driving device, wherein the lifting wire connects to the top of the ingot via one terminal and to the driving device via another terminal. The bottom of the ingot puts inside the crucible, and the ingot has plural crystal lines thereon. The infrared detector is located outside the growth furnace. The dividing disc is above the growth furnace, connects to the lifting mechanism, and rotates with the ingot synchronously under the driving of the lifting mechanism, and an orthographic projection of bisector of the dividing disc is between two adjacent crystal lines. The sensor is located on the periphery of the dividing disc.

Abstract: A seeding method for crystal growth comprising: a first seeding step: rotating a crucible with a first rotation speed to grow the crystal to a first length; a second seeding step: gradually increasing the rotation speed of the crucible from the first rotation speed to a second rotation speed, and growing the crystal to a second length; a third seeding step: rotating the crucible with the second rotation speed to growing the crystal to a predicted length. By separating the seeding stage to three steps and gradually increasing the rotation speed in the second step of the crucible, the silicon melt convection is enhanced and the temperature at center of the silicon melt is kept to be not lower than the starting temperature of the seeding. Thereby, the removal of dislocation within the seed crystal can be increased, and the growth problems such as broken or polycrystallization can be prevented.

Abstract: The present invention provides a method of making a silicon on insulator (SOI) structure, comprising steps of: providing a bonded structure, the bonded structure comprises a first substrate, a second substrate and an insulating buried layer, the insulating buried layer is positioned between the first substrate and the second substrate; peeling off a layer of removing region of the first substrate from the bonded structure to obtain a SOI structure; and processing the SOI structure with isothermal annealing technology at a pressure which is lower than atmospheric pressure.

Abstract: A crystal growth method and a crystal growth apparatus are disclosed in the present application. The crystal growth method comprises maintaining rotating of a crucible and meanwhile applying a horizontal magnetic field to silicon melt in the crucible during crystal growth. As and/or after changing magnetic field strength of the horizontal magnetic field, temperature fluctuation may easily occur at a solid-liquid interface of an ingot and the silicon melt. Through changing crucible rotating speed to change forced convection of the silicon melt, the temperature fluctuation at solid-liquid interface, caused by the changing of the magnetic field strength, may be rapidly reduced to stabilize diameter of the ingot.

Abstract: The present application provides a detection method of metal impurity in wafer. The method comprises conducting a medium temperature thermal treatment for a first predicted time period to the wafer, cooling the wafer and conducting a low temperature thermal treatment for a second predicted time period, cooling the wafer to ambient temperature; providing a liquid of vapor phase decomposition on the wafer to collect metal impurities; atomizing the liquid containing the collected metal impurities, conducting an inductively coupled plasma mass spectrometry analysis and obtaining concentrations of the metal impurities. The present application applies the combination of various thermal treatment without an interrupt of cooling to ambient temperature to contemplate diffusions of various metal impurities to the wafer surface. Accordingly, the detection of metal impurities can be conducted with reduced time cost and enhanced efficiency.

Abstract: The present invention provides a method of making a silicon on insulator (SOI) structure, comprising steps of: providing a bonded structure, the bonded structure comprises a first substrate, a second substrate and an insulating buried layer, the insulating buried layer is positioned between the first substrate and the second substrate; peeling off a layer of removing region of the first substrate from the bonded structure to obtain a SOI structure; and processing the SOI structure with isothermal annealing technology at a pressure which is lower than atmospheric pressure.

Abstract: A method of making a silicon on insulator structure comprises: providing a bonded structure, the bonded structure comprises the first substrate, the second substrate and the insulating buried layer, the insulating buried layer is positioned between the first substrate and the second substrate; peeling off a layer of removing region of the first substrate from the bonded structure to obtain a first film; at a first temperature, performing a first etching to etch the first film to remove a first thickness of the first film; at a second temperature, performing a second etching to etch the first film to planarize the first film and remove a second thickness of the first film, the first temperature being lower than the second temperature, the first thickness being greater than the second thickness, and a sum of the first thickness and the second thickness being a total etching thickness of the first film.

Abstract: Disclosed a heat shield structure for a single crystal production furnace, which is provided above a melt crucible of a single crystal production furnace and comprises an outer housing and a heat insulation plate disposed within the outer housing. A bottom outer surface of the outer housing faces an interior of the melt crucible, and an angle formed between a plane in which the heat insulation plate is located and a plane in which a bottom of the outer housing is located is an acute angle and faces an outer surface of single crystal silicon. The heat shield design is changed, a heat absorbing plate is additionally provided for transferring heat absorbed to the single crystal silicon, a heat channel is formed in the heat shield, so that a pulling rate is controlled, which improves radial mass uniformity of the single crystal silicon.

Abstract: The present invention provides a method for calculating the liquid-solid interface morphology during growth of the ingot. The method comprises providing a wafer, selecting plural sampling locations on the wafer and detecting electrical resistivity at the plural sampling locations, calculating height differences between the sampling locations based on the detected electrical resistivity, and illustrating the morphology of the liquid-solid interface based on the calculated height differences. The method of the invention has advantages including easy operation and low cost.

Abstract: A seeding method for crystal growth comprising: a first seeding step: rotating a crucible with a first rotation speed to grow the crystal to a first length; a second seeding step: gradually increasing the rotation speed of the crucible from the first rotation speed to a second rotation speed, and growing the crystal to a second length; a third seeding step: rotating the crucible with the second rotation speed to growing the crystal to a predicted length. By separating the seeding stage to three steps and gradually increasing the rotation speed in the second step of the crucible, the silicon melt convection is enhanced and the temperature at center of the silicon melt is kept to be not lower than the starting temperature of the seeding. Thereby, the removal of dislocation within the seed crystal can be increased, and the growth problems such as broken or polycrystallization can be prevented.

Abstract: The present invention provides a method and an apparatus of monocrystal growth. The method comprises providing an apparatus comprising a crucible, a first lifting device for lifting the crucible, a deflector tube and a second lifting device for lifting the deflector tube; setting a theoretical distance between the deflector tube and the melt surface, determining a theoretical ratio of the crucible lifting rate relative to the monocrystal lifting rate based on sizes of the crucible and the monocrystal, and starting to grow the monocrystal. During the growth, the position of one or more of the crucible, the deflector tube and the monocrystal is adjusted, the actual distance between the deflector tube and the melt surface is real-time detected, the deviation value between the theoretical and the actual distances is calculated, a variation of the ratio is obtained by the deviation value, and the theoretical ratio is adjusted based on the variation.