Abstract: An optical package comprising an optical die that is electrically coupled to a package substrate, and an optical interconnect adjacent the optical die. The optical interconnect comprises a first polarizing filter adjacent to a first lens, a second polarizing filter adjacent to a second lens; and a film comprising a magnetic material between the first polarizing filter and the second polarizing filter. The second polarizing filter is rotated with respect to the first polarizing filter and the magnetic material is to rotate a polarization vector of light incoming to the optical interconnect. An optical fiber interface port is immediately adjacent to the first lens. The second lens is immediately adjacent to an optical interface of the optical die.

Abstract: An apparatus to facilitate exception handling for debugging in a graphics environment is disclosed. The apparatus includes load store pipeline hardware circuitry to: in response to a page fault exception being enabled for a memory access request received from a thread of the plurality of threads, allocate a memory dependency token correlated to a scoreboard identifier (SBID) that is included with the memory access request; send, to memory fabric of the graphics processor, the memory access request comprising the memory dependency token; receive, from the memory fabric in response to the memory access request, a memory access response comprising the memory dependency token and indicating occurrence of a page fault error condition and fault details associated with the page fault error condition; and return the SBID associated with the memory access response and fault details of the page fault error condition to a debug register of the thread.

Abstract: A Media Analytics Co-optimizer (MAC) engine that utilizes available motion and scene information to increase the activation sparsity in artificial intelligence (AI) visual media applications. In an example, the MAC engine receives video frames and associated video characteristics determined by a video decoder and reformats the video frames by applying a threshold level of motion to the video frames and zeroing out areas that fall below the threshold level of motion. In some examples, the MAC engine further receives scene information from an optical flow engine or event processing engine and reformats further based thereon. The reformatted video frames are consumed by the first stage of AI inference.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate, having a surface, including a first conductive pathway electrically coupled to a power source; an insulating material on the surface of the package substrate; a first microelectronic component, having a first surface facing the package substrate and an opposing second surface, embedded in the insulating material; a second microelectronic component, having a first surface facing the package substrate and an opposing second surface, embedded in the insulating material; a redistribution layer on the insulating material including a second conductive pathway electrically coupled to the second surface of the second microelectronic component and the second surface of the first microelectronic component; and a wire bond electrically coupling the first and the second conductive pathways.

Abstract: An apparatus to facilitate a fused instruction to accelerate performance of secure hash algorithm 2 (SHA-2) in a graphics environment is disclosed. The apparatus includes a processor comprising processing resources, the processing resources comprising execution circuitry to receive a fused SHA instruction identifying a length corresponding to a data size of the fused SHA instruction and a functional control identifying an operation type of the fused SHA instruction; based on decoding the fused SHA instruction, cause a sub-function identified by the length and the function control to be scheduled to an integer pipeline of the execution resource; and execute the sub-function of the fused SHA instruction in an integer pipeline of the execution circuitry, the sub-function to perform merged operations on a source operand of the fused SHA instruction, the merged operations comprising a rotate operation, a shift operation, and an xor operation.

Abstract: A processing apparatus includes a general-purpose parallel processing engine including a set of multiple processing elements including a single precision floating-point unit, a double precision floating point unit, and an integer unit; a matrix accelerator including one or more systolic arrays; a first register file coupled with a first read control circuit, wherein the first read control circuit couples with the set of multiple processing elements and the matrix accelerator to arbitrate read requests to the first register file from the set of multiple processing elements and the matrix accelerator; and a second register file coupled with a second read control circuit, wherein the second read control circuit couples with the matrix accelerator to arbitrate read requests to the second register file from the matrix accelerator and limit access to the second register file by the set of multiple processing elements.

Abstract: An integrated circuit (IC) package comprising an optical die comprising a configurable optical switch. The configurable optical switch comprises an optical switch operably coupled to one or more optical transceivers. An optical connector comprises at least one exo-package optical port. The at least one exo-package optical port is operably coupled to the configurable optical switch. The configurable optical switch is to pass an optical signal on the at least one of the one or more exo-package ports to at least one of the one or more optical transceivers, and an IC die comprising electronic circuitry is operably coupled to the one or more optical transceivers.

Abstract: Aspects of the embodiments are directed to a port comprising hardware to support the multi-lane link, the link comprising a lane that comprises a first differential signal pair and a second differential signal pair. Link configuration logic, implemented at least in part in hardware circuitry, can determine that the port comprises hardware to support one or both of receiving data on the first differential signal pair or transmitting data on the second differential signal pair, and reconfigure the first differential signal pair to receive data with the second differential signal pair or reconfigure the second differential signal pair to transmit data with the first differential signal pair; and wherein the port is to transmit data or receive data based on reconfiguration of one or both the first differential signal pair and the second differential signal pair.

Abstract: Integrated circuitry interconnect structures comprising a first metal and a graphene cap over a top surface of the first metal. Within the interconnect structure an amount of a second metal, nitrogen, or silicon is greater proximal to an interface of the graphene cap. The presence of the second metal, nitrogen, or silicon may improve adhesion of the graphene to the first metal and/or otherwise improve electromigration resistance of a graphene capped interconnect structure. The second metal, nitrogen, or silicon may be introduced into the first metal during deposition of the first metal, or during a post-deposition treatment of the first metal. The second metal, nitrogen, or silicon may be introduced prior to, or after, capping the first metal with graphene.

Abstract: Described herein are three-dimensional memory arrays that include multiple layers of memory cells. The layers are stacked and bonded to each other at bonding interfaces. The layers are formed on a support structure, such as a semiconductor wafer, that is grinded down before the layers are bonded. Vias extend through multiple layers of memory cells, including through the support structures and bonding interfaces. Thinning the support structure enables a tighter via pitch, which reduces the portion of the footprint used for vias. The memory cells may include three-dimensional transistors with a recessed gate and extended channel length.

Abstract: Disclosed herein are IC structures with three-dimensional capacitors with double metal electrodes provided in a support structure (e.g., a substrate, a die, a wafer, or a chip). An example three-dimensional capacitor includes first and second capacitor electrodes and a capacitor insulator between them. Each capacitor electrode includes a planar portion extending across the support structure and one or more via portions extending into one or more via openings in the support structure. The capacitor insulator also includes a planar portion and a via portion extending into the via opening(s). The planar portion of the capacitor electrodes are thicker than the via portions. Each capacitor electrode may be deposited using two deposition processes, such as a conformal deposition process for depositing the via portion of the electrode, and a sputter process for depositing the planar portion of the electrode.

Abstract: For example, an apparatus may include an encoder configured to encode data into a plurality of codewords according to a parity function for a transmission modulated according to a Differential Modulation (DM) scheme, and/or a decoder to decode received codewords of the transmission.

Abstract: A computer platform is disclosed. The computer platform comprises a non-volatile memory to store fuse override data; and a system on chip (SOC), coupled to the non-volatile memory, including a fuse memory to store fuse data and security micro-controller to receive the fuse override data and perform a fuse override to overwrite the fuse data stored in the fuse memory with the fuse override data.

Abstract: A microelectronic assembly is provided, comprising: a first integrated circuit (IC) die at a first level, a second IC die at a second level, and a third IC die at a third level, the second level being in between the first level and the third level. A first interface between the first level and the second level is electrically coupled with high-density interconnects of a first pitch and a second interface between the second level and the third level is electrically coupled with interconnects of a second pitch. In some embodiments, at least one of the first IC die, second IC die, and third IC die comprises another microelectronic assembly. In other embodiments, at least one of the first IC die, second IC die, and third IC die comprises a semiconductor die.

Abstract: Technologies for trusted I/O include a computing device having a hardware cryptographic agent, a cryptographic engine, and an I/O controller. The hardware cryptographic agent intercepts a message from the I/O controller and identifies boundaries of the message. The message may include multiple DMA transactions, and the start of message is the start of the first DMA transaction. The cryptographic engine encrypts the message and stores the encrypted data in a memory buffer. The cryptographic engine may skip and not encrypt header data starting at the start of message or may read a value from the header to determine the skip length. In some embodiments, the cryptographic agent and the cryptographic engine may be an inline cryptographic engine. In some embodiments, the cryptographic agent may be a channel identifier filter, and the cryptographic engine may be processor-based. Other embodiments are described and claimed.

Abstract: Disclosed herein are high-permeability magnetic thin films for coaxial metal inductor loop structures formed in through glass vias of a glass core package substrate, and related methods, devices, and systems. Exemplary coaxial metal inductor loop structures include a high-permeability magnetic layer within and on a surface of a through glass via extending through the glass core package substrate and a conductive layer on the high-permeability magnetic layer.

Abstract: Technologies for quality of service based throttling in a fabric architecture include a network node of a plurality of network nodes interconnected across the fabric architecture via an interconnect fabric. The network node includes a host fabric interface (HFI) configured to facilitate the transmission of data to/from the network node, monitor quality of service levels of resources of the network node used to process and transmit the data, and detect a throttling condition based on a result of the monitored quality of service levels. The HFI is further configured to generate and transmit a throttling message to one or more of the interconnected network nodes in response to having detected a throttling condition. The HFI is additionally configured to receive a throttling message from another of the network nodes and perform a throttling action on one or more of the resources based on the received throttling message. Other embodiments are described herein.

Abstract: An apparatus to facilitate video motion smoothing is disclosed. The apparatus comprises one or more processors including a graphics processor, the one or more processors including circuitry configured to receive a video stream, decode the video stream to generate a motion vector map and a plurality of video image frames, analyze the motion vector map to detect a plurality of candidate frames, wherein the plurality of candidate frames comprise a period of discontinuous motion in the plurality of video image frames and the plurality of candidate frames are determined based on a classification generated via a convolutional neural network (CNN), generate, via a generative adversarial network (GAN), one or more synthetic frames based on the plurality of candidate frames, insert the one or more synthetic frames between the plurality of candidate frames to generate up-sampled video frames and transmit the up-sampled video frames for display.

Abstract: A microcontroller, processor, and/or software (SW) monitors a battery degradation indicator such as battery State-Of-Health (SOH), impedance or other attributes, and calculates battery degradation rate and regulates burst power, battery charging speed and/or battery charging limit to meet users' expectation of battery service life. The microcontroller, processor, and/or SW increases the burst power, battery charging speed and/or battery charging limit when 1/SOH or impedance change rate (or related parameter) is smaller than expected and there is more longevity budget than expected. In another example, the microcontroller, processor, and/or SW decreases the burst power, battery charging speed and/or battery charging limit when 1/SOH or impedance change rate (or related parameter) is greater than expected and there is less longevity budget than expected.

Abstract: Embodiments are directed to systems and methods for reuse of FMA execution unit hardware logic to provide native support for execution of get exponent, get mantissa, and/or scale instructions within a GPU. These new instructions may be used to implement branch-free emulation algorithms for mathematical functions and analytic functions (e.g., transcendental functions) by detecting and handling various special case inputs within a pre-processing stage of the FMA execution unit, which allows the main dataflow of the FMA execution unit to be bypassed for such special cases. Since special cases are handled by the FMA execution unit, library functions emulating various functions, including, but not limited to logarithm, exponential, and division operations may be implemented with significantly fewer lines of machine-level code, thereby providing improved performance for HPC applications.

Abstract: A microelectronic socket structure and a method of forming the same. The socket structure comprises: a socket structure housing defining a cavity therein; and an interconnection structure including: a contact element disposed at least in part within the cavity, and configured to be electrically coupled to a corresponding microelectronic package, the contact element corresponding to one of a signal contact element or a ground contact element; and a conductive structure disposed at least in part within the cavity, electrically coupled to the contact element, and having an outer contour that is non-conformal with respect to an outer contour of the contact element.

Abstract: Integrated circuit packages may be formed having at least one optical via extending from a first surface of a package substrate to an opposing second surface of the package substrate. The at least one optical via creates an optical link between the opposing surfaces of the package substrate that enables the fabrication of a dual-sided optical multiple chip package, wherein integrated circuit devices can be attached to both surfaces of the package substrate for increased package density.

Abstract: Embodiments of the present disclosure relate to methods of fabricating IC devices using layer transfer and resulting IC devices, assemblies, and systems. An example method includes fabricating a device layer over a semiconductor support structure, the device layer comprising a plurality of frontend devices; attaching the semiconductor support structure with the device layer to a carrier substrate so that the device layer is closer to the carrier substrate than the semiconductor support structure; removing at least a portion of the semiconductor support structure to expose the device layer; and bonding a support structure of a non-semiconductor material having a dielectric constant that is smaller than a dielectric constant of silicon (e.g., a glass wafer) to the exposed frontend layer. The carrier substrate may then be removed.

Abstract: An embodiment of an integrated circuit comprises circuitry to store memory protection information for a non-host memory in a memory protection cache, and perform one or more memory protection checks on a translated access request for the non-host memory based on the stored memory protection information. Other embodiments are disclosed and claimed.

Abstract: An embodiment of an integrated circuit may comprise a return stack buffer (RSB), a speculative return stack buffer (SRSB), and circuitry coupled to the RSB and the SRSB, the circuitry to track a count until the SRSB is empty at a time of a prediction by a branch prediction unit, and return an output from the branch prediction unit that corresponds to one of the RSB and the SRSB based at least in part on the count until the SRSB is empty. Other embodiments are disclosed and claimed.

Abstract: Techniques related to scheduling and load balancing media tasks across heterogeneous hardware units are discussed. Such techniques include estimating completion times of received media tasks and, after submission of the media task to a selected hardware, only checking status of the media task after the estimated completion time.

Abstract: An embodiment of an integrated circuit comprises circuitry to generate a cache tag for data to be stored in a cache memory, store a first portion of the cache tag in a primary tag memory, and store a second portion of the cache tag in a secondary tag memory, wherein a size of the first portion is smaller than a size of the second portion. Other embodiments are disclosed and claimed.

Abstract: A method and system of audio processing encodes cochlear-simulating spike data into spectrogram data.

Abstract: A three dimensional circuit system includes a first integrated circuit die having a core logic region that has first memory circuits and logic circuits. The three dimensional circuit system includes a second integrated circuit die that has second memory circuits. The first and second integrated circuit dies are coupled together in a vertically stacked configuration. The three dimensional circuit system includes third memory circuits coupled to the first integrated circuit die. The third memory circuits reside in a plane of the first integrated circuit die. The logic circuits are coupled to access the first, second, and third memory circuits and data can move between the first, second, and third memories. The third memory circuits have a larger memory capacity and a smaller memory access bandwidth than the second memory circuits. The second memory circuits have a larger memory capacity and a smaller memory access bandwidth than the first memory circuits.

Abstract: Disclosed herein are transistor electrode-channel arrangements, and related methods and devices. For example, in some embodiments, a transistor electrode-channel arrangement may include a channel material, source/drain electrodes provided over the channel material, and a sealant at least partially enclosing one or more of the source/drain electrodes, wherein the sealant includes one or more metallic conductive materials.

Abstract: An apparatus to facilitate partitioning of a graphics device is disclosed. The apparatus includes a plurality of engines and logic to partition the plurality of engines to facilitate independent access to each engine within the plurality of engines.

Abstract: Techniques and mechanisms for providing structures of a magnetic material based inductor. In an embodiment, an inductor comprises a body of a magnetic material, and a conductor which extends along a surface of the body. The body comprises a carrier material and magnetic filler particles distributed in the carrier material. A passivation material of the inductor is provided adjacent to the conductor and to surfaces of the filler particles. The conductor and the passivation material comprise different respective material compositions, wherein the passivation material comprises one of nickel, tin, copper, palladium, or gold. In another embodiment, the inductor is one of a plated through hole inductor type of a planar inductor type.

Abstract: An integrated circuit package may be formed comprising a first integrated circuit assembly, a second integrated circuit assembly, and a means to transfer optical signals therebetween. This optical signal transfer may be facilitated with a first lens or a first micro-lens array adjacent at least one waveguide of the first integrated circuit assembly and a second lens or second micro-lens array adjacent at least one waveguide of the second integrated circuit assembly, wherein the optical signals are transmitted across a gap between the first lens/micro-lens array and the second lens/micro-lens array. In further embodiments, the optical signal transfer assembly may comprise at least one photonic bridge between at least one waveguide of the first integrated circuit assembly and at least one waveguide of the second integrated circuit assembly.

Abstract: In one example, an apparatus for Advanced Encryption Standard (AES) substitutions box (S-box) encryption includes an S-Box logic function and a MixColumns multiplication operation. The S-box logic function takes as input a state and is an 8-bit to 8-bit logic function, and wherein the S-box logic function is minimized such that an S-box round comprises nine not-and (NAND) levels and duplications of a logical product of the minimized S-box logic function are eliminated. The MixColumns multiplication operation comprises a plurality of factors that are exclusive ORed (XOR) with an output of the S-box round to obtain a scaled 16-byte output.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate having a surface; a die having a first surface and an opposing second surface; and a chiplet having a first surface and an opposing second surface, wherein the chiplet is between the surface of the package substrate and the first surface of the die, wherein the first surface of the chiplet is coupled to the surface of the package substrate and the second surface of the chiplet is coupled to the first surface of the die, and wherein the chiplet includes: a capacitor at the first surface; and an element at the second surface, wherein the element includes a switching transistor or a diode.

Abstract: A hardware and/or software (e.g., a controller and/or firmware or software) that monitors a remaining capacity of a battery and adjusts a continuum of system performance settings ranging from best performance to best energy efficiency. The controller starts with best performance setting (at the expense of energy efficiency), and then the controller gradually shifts toward energy efficiency setting (at the expense of performance) when a battery usage exceeds a pre-defined drain rate (e.g., there is a deficit in the battery remaining capacity until the next charge). The controller reverts from energy efficiency setting towards high performance setting when the battery drain rate or discharge rate slows down (e.g., there is a surplus in the battery remaining capacity until the next charge).

Abstract: An embodiment of a memory device may comprise a vertical channel, a first memory cell formed on the vertical channel, a first wordline coupled to the first memory cell, a second memory cell formed on the vertical channel immediately above the first memory cell, a second wordline coupled to the second memory cell, and an airgap disposed between the first wordline and the second wordline. Other embodiments are disclosed and claimed.

Abstract: A photonic integrated circuit (PIC) package comprising a first die, the first die comprising a first optical waveguide and a first trench extending from a first edge of the first die to the first optical waveguide. The first trench is aligned with the first optical waveguide. A second die comprises a second optical waveguide and a second trench extending from a second edge of the second die to the second optical waveguide. The second trench is aligned with the second optical waveguide. An optical wire comprising an uncladded glass fiber comprises a first terminal portion extending within the first trench and a second terminal portion extending within the second trench. The first terminal portion is aligned with the first optical waveguide and the second terminal portion is aligned with the second optical waveguide.

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component, embedded in a first dielectric layer, including a surface and one or more side surfaces at least partially encapsulated by a first magnetic conductive material; and a second microelectronic component, embedded in a second dielectric layer on the first dielectric layer, including a surface and one or more side surfaces at least partially encapsulated by a second magnetic conductive material, wherein the second microelectronic component is coupled to the surface of the first microelectronic component by a hybrid bonding region, and wherein the second magnetic conductive material is coupled to the first magnetic conductive material.

Abstract: An electronic substrate may be fabricated having a core comprising a laminate including a metal layer between a first insulator layer and a second insulator layer, a metal via through the core, and metallization features on a first side and a second side of the core, wherein first ones of the metallization features are embedded within dielectric material on the first side of the core, and wherein a sidewall of the dielectric material and of the first insulator layer defines a recess over an area of the metal layer. In an embodiment of the present description, an integrated circuit package may be formed with the electronic substrate, wherein at least two integrated circuit devices may be attached to the electronic substrate. In a further embodiment, the integrated circuit package may be electrically attached to an electronic board. Other embodiments are disclosed and claimed.

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a die-level interposer having a first surface and an opposing second surface; a first die coupled to the first surface of the die-level interposer by a first hybrid bonding region having a first pitch; a second die coupled to the second surface of the die-level interposer by a second hybrid bonding region having a second pitch different from the first pitch; and a third die coupled to the second surface of the die-level interposer by a third hybrid bonding region having a third pitch different from the first and second pitches.

Abstract: An Integrated Circuit (IC), comprising a first conductive trace on a first die, a second conductive trace on a second die, and a conductive pathway electrically coupling the first conductive trace with the second conductive trace. The second die is coupled to the first die with interconnects. The conductive pathway comprises a portion of the interconnects located proximate to a periphery of a region in the first die through which the first conductive trace is not routable. In some embodiments, the conductive pathway reroutes electrical connections away from the region. The region comprises a high congestion zone having high routing density in some embodiments. In other embodiments, the region comprises a “keep-out” zone.

Abstract: An embodiment of a memory device may include a full block memory array of a lower tile of 3D NAND string memory cells, a full block memory array of an upper tile of 3D NAND string memory cells, a first portion of a string driver circuit coupled to the full block memory array of the lower tile, a second portion of the string driver circuit coupled to the full block memory array of the upper tile, a first split block memory array of the lower tile coupled to the first portion of the string driver circuit, and a second split block memory array of the upper tile coupled to the second portion of the string driver circuit. Other embodiments are disclosed and claimed.

Abstract: A single-phase clocked data multiplexer (MUX-D) scan capable flipflop (FF) design that improves over existing transmission-gate (t-gate) based master-slave flipflops in terms of dynamic capacitance (Cdyn) as well as performance while remaining comparable in area. Unique features of the design are a complementary metal oxide semiconductor (non-t-gate) style structure with an improvement in circuit parameters achieved by eliminating clock inversions and maximally sharing NMOS devices across NAND structures. The core of the flipflop adopts an all CMOS NAND, And-OR-Inverter (AOI) complex logic structure to implement a true edge-triggered flip-flop functionality.

Abstract: A z-disaggregated integrated circuit package substrate assembly comprises a first substrate component (a coreless patch), a second substrate component (a core patch), and a third substrate component (an interposer). The coreless patch comprises thinner dielectric layers and higher density routing and can comprise an embedded bridge to allow for communication between integrated circuit dies attached to the coreless patch. The core layer acts as a middle layer interconnect between the coreless patch and the interposer and comprises liquid metal interconnects to connect the core patch physically and electrically to the coreless patch and the interposer. Core patch through holes comprise liquid metal plugs. Some through holes can be surrounded by and coaxially aligned with magnetic plugs to provide improved power signal delivery. The interposer comprises thicker dielectric layers and lower density routing.

Abstract: An electronic assembly, such as an integrated circuit package, may be formed comprising a package substrate and a photonic integrated circuit device attached thereto, wherein the package substrate includes a heat dissipation structure disposed therein. A back surface of the photonic integrated circuit device may thermally coupled to the heat dissipation structure within the package substrate for the removal of heat from the photonic integrated circuit device, which allows for access to an active surface of the photonic integrated circuit device for the attachment of fiber optic cables and eliminates the need for a heat dissipation device to be thermally attached to the active surface of the photonic integrated circuit device.

Abstract: Microelectronic assemblies fabricated using hybrid manufacturing with modified via-last process are disclosed. The fabrication approach is based on using hybrid manufacturing to bond first and second IC structures originally provided on different dies but filling at least portions of vias that are supposed to couple across a bonding interface between the first and second IC structures with electrically conductive materials after the IC structures have been bonded. A resulting microelectronic assembly that includes the first and second IC structures bonded together may have vias extending through all of the first IC structure and into the second IC structure, thus providing electrical coupling between one or more components of the first IC structure and those of the second IC structure, where an electrically conductive material in the individual vias is continuous through the first IC structure and at least a portion of the second IC structure.

Abstract: An integrated circuit (IC) package may be fabricated having an interposer, one or more microfluidic channels through the interposer, a first IC chip attached to a first side of the interposer, and a second IC chip attached to a second side of the interposer, where the first side of the interposer includes first bond pads coupled to first bond pads of the first IC chip, and the second side of the interposer includes second bond pads coupled to first bond pads of the second IC chip. In an embodiment of the present description, a liquid cooled three-dimensional IC (3DIC) package may be formed with the IC package, where at least two IC devices may be stacked with a liquid cooled interposer. In a further embodiment, the liquid cooled 3DIC package may be electrically attached to an electronic board. Other embodiments are disclosed and claimed.

Abstract: An electronic substrate may be fabricated having a dielectric material, metal pads embedded in the dielectric material with co-planar surfaces spaced less than one tenth millimeter from each other, and a metal trace embedded in the dielectric material and attached between the metal pads, wherein a surface of the metal trace is non-co-planar with the co-planar surfaces of the metal pads at a height of less than one millimeter, and wherein sides of the metal trace are angled relative to the co-planar surfaces of the metal pads. In an embodiment of the present description, an embedded angled inductor may be formed that includes the metal trace. In an embodiment, an integrated circuit package may be formed with the electronic substrate, wherein at least one integrated circuit devices may be attached to the electronic substrate. Other embodiments are disclosed and claimed.

Abstract: An electronic substrate may be fabricated having a primary interposer comprising a laminate with a metal via through the laminate, two or more secondary interposers attached to a first side of the primary interposer, where respective sidewalls of the two or more secondary interposers define one or more recesses over the primary interposer, and an embedded component within a recess of the one or more recesses defined by the respective sidewalls of the two or more secondary interposers. In an embodiment of the present description, an integrated circuit package may be formed with the electronic substrate, wherein at least two integrated circuit devices may be attached to the electronic substrate. In a further embodiment, the integrated circuit package may be electrically attached to an electronic board. Other embodiments are disclosed and claimed.