Abstract: A PCB having a first surface and a second surface includes a trench extending through the PCB, a plurality of conductive traces on one or more sidewalls of the trench. The plurality of conductive traces extends through the PCB and may be arranged in pairs across from one another along at least a portion of the length of the trench. A first set of conductive contacts are arranged in a first zig-zag pattern around a perimeter of the trench. A second set of conductive contacts are arranged in a second zig-zag pattern around the perimeter of the trench. In some cases, the first and second zig-zag patterns are arranged with respect to one another around the perimeter of the trench in an alternating fashion. A chip package is also disclosed having a pin arrangement that couples to the corresponding arrangement of conductive contacts on the PCB.

Abstract: According to one embodiment, a processor includes an instruction decoder to decode a first instruction to gather data elements from memory, the first instruction having a first operand specifying a first storage location and a second operand specifying a first memory address storing a plurality of data elements. The processor further includes an execution unit coupled to the instruction decoder, in response to the first instruction, to read contiguous a first and a second of the data elements from a memory location based on the first memory address indicated by the second operand, and to store the first data element in a first entry of the first storage location and a second data element in a second entry of a second storage location corresponding to the first entry of the first storage location.

Abstract: Embodiments disclosed herein include transistor devices and methods of forming such transistor devices. In an embodiment a transistor comprises a substrate, and a fin that extends up from the substrate. In an embodiment, the fin comprises a source region, a drain region, and a channel region between the source region and the drain region. In an embodiment, the transistor further comprises and a cavity in the fin, where the cavity is below the channel region. In an embodiment, the transistor further comprises a gate stack over the fin.

Abstract: Generally discussed herein are systems, devices, and methods for prefetcher in a multi-tiered memory (DSM) system. A node can include a network interface controller (NIC) comprising system address decoder (SAD) circuitry configured to determine a node identification of a node to which a memory request from a processor is homed, and prefetcher circuitry communicatively coupled to the SAD circuitry, the prefetcher circuitry to determine, based on an address in the memory request, one or more addresses from which to prefetch data, the one or more addresses corresponding to respective entries in a memory of a node on a different network than the NIC.

Abstract: The present disclosure relates to a bootstrapped switch circuit, a track-and-hold circuit, an analog-to-digital converter, a method for operating a track-and-hold circuit, a base station, and a mobile station. The bootstrapped switch circuit comprises an output for an output signal, a first input, a switching element configured to couple the output with a signal from the first input, a bootstrapper capacitor configured to drive the switching element, and a second input coupled to the bootstrapper capacitor.

Abstract: Systems and methods for automated generation and presentation of thematic content objects to consumers in a retail environment are provided. A portable device may include a transmitter or transceiver that emits, produces or otherwise transmits a signal that includes information and/or data representative of an identifier that uniquely identifies the portable device. Upon entering an establishment thematic content delivery circuitry detects the presence of the portable device and obtains the identifier included in the signal emitted by the portable device. Using the identifier, the thematic content delivery circuitry determines a theme logically associated with the identifier. The thematic content delivery circuitry generates thematic content output that is logically associated with the theme and communicates the thematic content output to an output device. The thematic content output may include display output, audio output, tactile output, hardcopy output, or combinations thereof.

Abstract: Methods, apparatus, systems and articles of manufacture (e.g., physical storage media) to provide device enhancements for software defined silicon implementations are disclosed. Example apparatus disclosed herein include a request interface to receive a request for a timestamp. Disclosed example apparatus also include a property checker to determine a first value of an electrical property of a feature embedded in a silicon product, the feature having electrical properties that change over time. Disclosed example apparatus further include a relative time determiner to calculate a relative time between the request and a previous event based on the first value of the electrical property and a second value of the electrical property, the second value of the electrical property associated with the previous event.

Abstract: An application management apparatus for controlling tasks, including a task split and response merge circuit configured to divide an application into a plurality of tasks and associate respective Key Performance Indicator (KPI) attributes to the plurality of tasks; and a task management circuit configured to allocate each of the plurality of tasks to a first or second Radio Access Technology (RAT) based on the KPI attributes, and to derive a plurality of task responses from the first or second RATs to which the respective plurality of tasks are allocated, wherein the task split and response merge circuit is further configured to merge the task responses to select the first or second RAT to run the application.

Abstract: In one example, a head-mounted display (HMD) device includes multiple display panels arranged in parallel with each other. Each of the display panels is associated with one of multiple focal lengths. The HMD device includes multiple lenses to view a three-dimensional (3D) scene on the display panels. The HMD device also includes a controller to provide a frame of the 3D scene, viewable at the focal lengths. The frames include focal layers generated at one of the focal lengths. The frames are rendered by displaying the focal layers in a sequence on the display panels associated with the focal length at which the focal layer is generated. The controller also allows visible light to pass through one or more of the display panels based on whether the render planes are between an active focal layer and the lenses.

Abstract: Systems, methods, and apparatuses relating to performing an attachment of an input-output memory management unit (IOMMU) to a device, and a verification of the attachment. In one embodiment, a protocol and IOMMU extensions are used by a secure arbitration mode (SEAM) module and/or circuitry to determine if the IOMMU that is attached to the device requested to be mapped to a trusted domain.

Abstract: Systems and methods for orchestration and configuration of end-to-end network slices across a 3GPP core network and ORAN are described. The network includes a NSMF that receives an AllocateNSI operation with attributes to allocate an NSI. The AllocateNSI operation includes an attributeListIn parameter that specifies network slice properties in a ServiceProfile to be supported by the NSI. The NSMF determines that a new NSI is to be created rather than using an existing NSI and that the new NSI is to contain a NSSI (RAN) and a NSSI (CN). The NSMF communicates with a NSSMF (RAN) and NSSMF (CN) to create the new NSI. The new NSI includes an O-CU-CP, O-CU-UP and O-DU VNFs, and an O-RU PNF for the NSSI (RAN), and UPF, AMF, and SMF VNFs for the NSSI (CN).

Abstract: Embodiments described herein may be directed to receiving a plurality of data captured, respectively, by a plurality of test instruments coupled to a device under test, wherein a plurality of data elements within, respectively, the plurality of captured data are associated with a timestamp based upon a time a data element was captured. Embodiments may also analyze the received plurality of data captured, respectively, by the one or more test instruments, and graphically display at least a portion of the analyzed plurality of captured data to a user. Other embodiments may be identified herein.

Abstract: Systems and methods of providing NR V2V communications are disclosed. Channel sensing is used by both UEs to determine sets of candidate resources, and subsequently select a resource, for PSCCH and PSSCH transmissions. The transmitting UE selects the PSCCH resource and transmits a scheduling request using the PSCCH resource, while the receiving UE selects a PSCCH and the PSSCH resource and transmits a scheduling grant in the PSCCH containing transmission parameters and the PSSCH resource to the transmitting UE. When the scheduling request contains the candidate resources for the PSCCH transmission, the receiving UE uses the intersection of the candidate resources for the PSCCH transmission and the candidate resources for transmission to determine the PSCCH and the PSSCH resource.

Abstract: Embodiments of a WLAN sensing frame exchange protocol are generally described herein. In some embodiments, a wireless communication device is configured to perform a WLAN sensing protocol within a basic service set (BSS) comprising one or more stations (STAs) (STA1 and STA2) including an access point station (AP STA). The WLAN sensing protocol comprises a discovery phase, a negotiation phase, a measurement phase, and a reporting phase. To perform the WLAN sensing protocol, the wireless communication device is configured to operate as either a sensing initiator or a sensing responder, and to operate as a sensing transmitter and/or a sensing receiver. Some 60 GHz embodiments relate to WLAN sensing in a PBSS or IBSS with DMG STAs.

Abstract: Methods, apparatus, systems, and articles of manufacture to simulate sensor data are disclosed. An example apparatus includes a noise characteristic identifier to extract a noise characteristic associated with a feature present in first sensor data obtained by a physical sensor. A feature identifier is to identify a feature present in second sensor data. The second sensor data is generated by an environment simulator simulating a virtual representation of the real sensor. A noise simulator is to synthesize noise-adjusted simulated sensor data based on the feature identified in the second sensor data and the noise characteristic associated with the feature present in the first sensor data.

Abstract: A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and between the pair of spacers, and a pair of diffusion regions adjacent to the pair of spacers. The insulating cap layer forms an etch stop structure that is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations.

Abstract: In an example, an apparatus comprises a plurality of execution units; and logic, at least partially including hardware logic, to determine a sub-graph of a network that can be executed in a frequency domain and apply computations in the sub-graph in the frequency domain. Other embodiments are also disclosed and claimed.

Abstract: Edge devices utilizing personalized machine learning and methods of operating the same are disclosed. An example edge device includes a model accessor to access a first machine learning model from a cloud service provider. A local data interface is to collect local user data. A model trainer is to train the first machine learning model to create a second machine learning model using the local user data. A local permissions data store is to store permissions indicating constraints on the local user data with respect to sharing outside of the edge device. A permissions enforcer is to apply permissions to the local user data to create a sub-set of the local user data to be shared outside of the edge device. A transmitter is to provide the sub-set of the local user data to a public data repository.

Abstract: This disclosure describes methods, apparatus, and systems related to enhanced Bluetooth triggering of device Wi-Fi radios. A device may determine a first Bluetooth data packet including transport data and an indication of a Wi-Fi service discovery, the transport data including a first sub-field and a second sub-field, the first sub-field indicating a length of the second sub-field, and the second sub-field indicating one or more Wi-Fi services supported by the device. A Bluetooth radio of the device may send the first Bluetooth data packet including an indication of a Wi-Fi service. The device may identify a second Bluetooth data packet received by the Bluetooth radio from a second device, the second Bluetooth data packet indicating that the Wi-Fi service is supported by the second device. The device may use a Wi-Fi radio to send one or more Wi-Fi frames associated with the Wi-Fi service to the second device.

Abstract: One embodiment provides a multi-chip module accelerator usable to execute tensor data processing operations a multi-chip module. The multi-chip module may include a memory stack including multiple memory dies and parallel processor circuitry communicatively coupled to the memory stack. The parallel processor circuitry may include multiprocessor cores to execute matrix multiplication and accumulate operations. The matrix multiplication and accumulate operations may include floating-point operations that are configurable to include two-dimensional matrix multiply and accumulate operations involving inputs that have differing floating-point precisions. The floating-point operations may include a first operation at a first precision and a second operation at a second precision. The first operation may include a multiply having at least one 16-bit floating-point input and the second operation may include an accumulate having a 32-bit floating-point input.

Abstract: The apparatus of an edge computing node, a system, a method and a machine-readable medium. The apparatus includes a processor to perform rounds of federated machine learning training including: processing client reports from a plurality of clients of the edge computing network; selecting a candidate set of clients from the plurality of clients for an epoch of the federated machine learning training; causing a global model to be sent to the candidate set of clients; and performing the federated machine learning training on the candidate set of clients. The processor may perform rounds of federated machine learning training including: obtaining coded training data from each of the selected clients; and performing machine learning training on the coded training data.

Abstract: A leakage insensitive transistor includes a substrate, a source region, a drain region, a channel region between the source region and drain region, a gate dielectric on the channel region, first and second electrodes on the gate dielectric, and third and fourth electrodes on the substrate. The leakage insensitive transistor may be operated by applying a first logic signal to the first electrode, floating the second electrode of the FET, applying a second logic signal opposite the first logic signal to the third electrode, and floating the fourth electrode. A logic circuit may include multiple leakage insensitive transistors.

Abstract: Techniques are provided herein to form semiconductor devices having different work function metals over different devices. The techniques can be used in any number of integrated circuit applications and are particularly useful with respect to gate-all-around (GAA) transistors. In an example, neighboring semiconductor devices each include a different work function to act as the device gate electrode for each semiconductor device. More specifically, a first semiconductor device may be a p-channel GAA transistor with a first work function metal around the various nanoribbons of the transistor, while the second neighboring semiconductor device may be an n-channel GAA transistor with a second work function metal around the various nanoribbons of the transistor. No portions of the first work function metal are present around the nanoribbons of the second semiconductor device and no portions of the second work function metal are present around the nanoribbons of the first semiconductor device.

Abstract: In one embodiment, a state is encoded into a memory cell comprising a phase change material (PM) region and a select device (SD) region by: applying a first current in the memory cell over a first time period, wherein the first current applied over the first time period causes the PM region of the memory cell to be placed into an amorphous state and the SD region of the memory cell to be placed into an amorphous state; and applying a second current in the memory cell over a second time period after the first time period, wherein the second current applied over the third time period causes the SD region of the memory cell to be placed into a crystalline state and the PM region of the memory cell to remain in the amorphous state.

Abstract: A memory device, an integrated circuit component including an array of the memory devices, and an integrated device assembly including the integrated circuit component. The memory devices includes a first electrode; a second electrode including an antiferromagnetic (AFM) material; and a memory stack including: a first layer adjacent the second electrode and including a multilayer stack of adjacent layers comprising ferromagnetic materials; a second layer adjacent the first layer; and a third layer adjacent the second layer at one side thereof, and adjacent the first electrode at another side thereof, the second layer between the first layer and the third layer, the third layer including a ferromagnetic material. The memory device may correspond to a magnetic tunnel junction (MTJ) magnetic random access memory bit cell, and the memory stack may correspond to a MTJ device.

Abstract: An apparatus to facilitate transparent network access controls for spatial accelerator device multi-tenancy is disclosed. The apparatus includes a secure device manager (SDM) to: establish a network-on-chip (NoC) communication path in the apparatus, the NoC communication path comprising a plurality of NoC nodes for ingress and egress of communications on the NoC communication path; for each NoC node of the NoC communication path, configure a programmable register of the NoC node to indicate a node group that the NoC node is assigned, the node group corresponding to a persona configured on the apparatus; determine whether a prefix of received data at the NoC node matches the node group indicated by the programmable register of the NoC; and responsive to determining that the prefix does not match the node group, discard the data from the NoC node.

Abstract: One embodiment provides a graphics processor comprising a set of processing resources configured to perform a supersampling operation via a mixed precision convolutional neural network, the set of processing resources including circuitry configured to receive, at an input block of a neural network model, history data, velocity data, and current frame data, pre-process the history data, velocity data, and current frame data to generate pre-processed data, provide the pre-processed data to a feature extraction network of the neural network model, process the pre-processed data at the feature extraction network via one or more encoder stages and one or more decoder stages, and generate an output image via an output block of the neural network model via direct reconstruction or kernel prediction.

Abstract: A graphics processor is provided that includes circuitry configured to receive, at an input block of a neural network model, a set of data including previous frame data, current frame data, velocity data, and jitter offset data. The neural network model is configured to generate a denoised, supersampled, and anti-aliased output image based on reliability metrics computed based on sample distribution data for samples within the current frame data.

Abstract: Techniques are provided herein to form semiconductor devices having gate tie-down structures between the device gate and a buried/backside power rail (BPR). In an example, a semiconductor device includes a conductive material that is part of a transistor gate structure on a semiconductor region. The semiconductor region can be, for example, a fin or a set of one or more nanowires or nanoribbons that extends between a source region and a drain region. A BPR structure is beneath a dielectric layer that is between the BPR structure and the conductive material of the gate structure. A portion of the conductive material also extends through the dielectric material to provide a conductive via between the gate structure and the underlying BPR structure. The conductive material may be, for example, work function and/or metal fill material of the gate electrode of the gate structure.

Abstract: Integrated circuit (IC) devices implementing bilayer memory stacking with compute logic circuits shared between bottom and top memory layers are disclosed. An example IC device includes a first IC structure that includes one or more memory layers but not necessarily compute logic circuits, the first IC structure being bonded with a second IC structure that includes at least one layer of compute logic circuits and further includes one or more memory layers stacked above the compute logic circuits. The first and second IC structures may be bonded so that the compute logic circuits of the second IC structure may be communicatively coupled to memory layers of both the first and second IC structures.

Abstract: A microelectronic assembly is provided, comprising a first IC die having an electrical load circuit, a second IC die having a portion of a voltage regulator (VR) electrically coupled to the first IC die, a package substrate having inductors of the VR electrically coupled to the first IC die and the second IC die, and a mold compound between the first IC die and the package substrate. The VR receives power at a first voltage from the package substrate and provides power at a second voltage to the electrical load circuit, the second voltage being lower than the first voltage. In various embodiments, the second IC die is in the mold compound. In some embodiments, the mold compound and the second IC die are comprised in a discrete interposer electrically coupled to the first IC die with die-to-die interconnects and to the package substrate with die-to-package substrate interconnects.

Abstract: Disclosed herein are IC devices, packages, and device assemblies that include III-N diodes with n-doped wells and capping layers. An example IC device includes a support structure and a III-N layer, provided over a portion of the support structure, the III-N layer including an n-doped well of a III-N semiconductor material having n-type dopants with a dopant concentration of at least 5×1017 dopants per cubic centimeter. The IC device further includes a first and a second electrodes and at least one capping layer. The first electrode interfaces a first portion of the n-doped well. The capping layer interfaces a second portion of the n-doped well and includes a semiconductor material with a dopant concentration below 1017 dopants per cubic centimeter. The second electrode is provided so that the capping layer is between the second portion of the n-doped well and the second electrode.

Abstract: A microelectronic assembly is provided comprising a first integrated circuit (IC) die having an electrical load circuit, a second IC die having a portion of a voltage regulator (VR), and a third IC die comprising inductors of the VR. The third IC die is between the first IC die and the second IC die, and the VR receives power at a first voltage and provides power at a second voltage to the electrical load circuit, the second voltage being lower than the first voltage. In various embodiments, the inductors in the third IC die comprise magnetic thin films. The third IC die may be a passive die without any active elements in some embodiments. In some embodiments, the microelectronic assembly further comprises a package substrate having conductive pathways, and the second IC die is between the third IC die and the package substrate.

Abstract: Devices and techniques related to implementing patch based video coding for machines are discussed. Such patch based video coding includes detecting regions of interest in a frame of video, extracting the detected regions of interest to one or more atlases absent the frame at a resolution not less than the resolution of the regions of interest, and encoding the one or more atlases to a bitstream.

Abstract: One embodiment provides an apparatus comprising a memory stack including multiple memory dies and a parallel processor including a plurality of multiprocessors. Each multiprocessor has a single instruction, multiple thread (SIMT) architecture, the parallel processor coupled to the memory stack via one or more memory interfaces. At least one multiprocessor comprises a multiply-accumulate circuit to perform multiply-accumulate operations on matrix data in a stage of a neural network implementation to produce a result matrix comprising a plurality of matrix data elements at a first precision, precision tracking logic to evaluate metrics associated with the matrix data elements and indicate if an optimization is to be performed for representing data at a second stage of the neural network implementation, and a numerical transform unit to dynamically perform a numerical transform operation on the matrix data elements based on the indication to produce transformed matrix data elements at a second precision.

Abstract: Techniques are provided for protecting integrated circuits from plasma-induced electrostatic discharge (ESD) using a carrier substrate with integrated junctions. According to some embodiments, the various metal features within an interconnect region above a plurality of semiconductor devices are electrically coupled to one or more conductive pads on a bonded carrier substrate. The conductive pads provide a contact to underlying doped regions within the carrier substrate that form one or more PN junctions. This provides the ability to electrically ground metal features in the interconnect region via the carrier substrate. Formation of additional interconnect layers such as those provided during far back end of line (FBEOL) processing, can proceed while causing less plasma-induced ESD damage to the integrated circuit, because the interconnect region is connected to ground of carrier substrate by way of PN junctions, thus providing a discharge path for charge that develops during subsequent processing.

Abstract: Disclosed herein are techniques to coordinate power management between a platform and a panel. Provided are apparatuses, techniques, and circuitry to determine whether to initiate power management features in a panel and send a signal from a platform to the panel including an indication that no frame updates are expected and power management functions can be initiated.

Abstract: A method comprises receiving an image of an update for a software module, a rate parameter, an index parameter, and a public key, generating a 32-byte aligned string, computing a state parameter using the 32-byte aligned string, generating a modified message representative, computing a Merkle Tree root node, and in response to a determination that the Merkle Tree root node matches the public key, forwarding, to a remote device, the image of the update for a software module, the state parameter; and the modified message representative.

Abstract: Techniques are provided herein for forming interconnect structures, such as conductive vias or contacts, that are protected from subsequent processing that includes reactive gas or plasma. A conductive via or contact within an interconnect layer may be formed with a capping layer having a different material to protect the underlying metal material from reacting with certain reactive gas or plasma elements. In some examples, a ruthenium capping layer is formed over a copper via to protect the copper. Other capping layer materials may include tungsten, cobalt, or molybdenum. In some embodiments, the entire conductive via may be formed using one of ruthenium, tungsten, cobalt, or molybdenum, to avoid the use of more reactive metals, such as copper. The capping layer (or less reactive metals) are used to protect the via during a barrier layer doping process that uses a gas or plasma including a chalcogen element (e.g., sulfur and/or selenium).

Abstract: Technologies for establishing and utilizing a decentralized cloud infrastructure using a plurality of mobile computing devices include broadcasting for the formation of the decentralized cloud computing and storage infrastructure and establishing wireless communications between the plurality of mobile computing devices. The plurality of mobile computing devices self-organize and cooperate with one another to establish a structured decentralized cloud infrastructure to expose and sharing resources, services, and/or applications for ad hoc or socially-driven decentralized, cloud computing purposes.

Abstract: Methods, apparatus, and computer platforms and architectures employing many-to-many and many-to-one peripheral switches. The methods and apparatus may be implemented on computer platforms having multiple nodes, such as those employing a Non-uniform Memory Access (NUMA) architecture, wherein each node comprises a plurality of components including a processor having at least one level of memory cache and being operatively coupled to system memory and operatively coupled to a many-to-many peripheral switch that includes a plurality of downstream ports to which NICs and/or peripheral expansion slots are operatively coupled, or a many-to-one switch that enables a peripheral device to be shared by multiple nodes. During operation, packets are received at the NICs and DMA memory writes are initiated using memory write transactions identifying a destination memory address.

Abstract: Generally this disclosure describes a video communication system that replaces actual live images of the participating users with animated avatars. A method may include selecting an avatar; initiating communication; detecting a user input; identifying the user input; identifying an animation command based on the user input; generating avatar parameters; and transmitting at least one of the animation command and the avatar parameters.

Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such semiconductor devices. In an embodiment, a method of fabricating a semiconductor device comprises, forming a first grating of parallel first lines, forming a second grating of parallel second lines, wherein the second lines are substantially orthogonal to the first lines, and wherein the first lines and second lines define a plurality of first openings, disposing a conformal mask layer over the first lines and the second lines, wherein the conformal mask layer partially fills the first openings and defines a second opening within each of the first openings, disposing a hardmask over the conformal mask layer, wherein the hardmask fills the second openings, patterning third openings into the hardmask, wherein the third openings clear the hardmask from at least one of the second openings, and removing the mask layer proximate to cleared second openings to clear first openings.

Abstract: In one embodiment, a field programmable gate array (FPGA) includes: at least one programmable logic circuit to execute a function programmed with a bitstream; a self-test circuit to execute a self-test at a first voltage, the self-test and the first voltage programmed with first metadata associated with the bitstream, the self-test including at least one critical path length of the function; and a power controller to identify an operating voltage for the at least one programmable logic circuit based at least in part on the execution of the self-test at the first voltage.

Abstract: An example apparatus for semantic image segmentation includes a receiver to receive an image to be segmented. The apparatus also includes a gated dense pyramid network including a plurality of gated dense pyramid (GDP) blocks to be trained to generate semantic labels for respective pixels in the received image. The apparatus further includes a generator to generate a segmented image based on the generated semantic labels.

Abstract: In connection with an access of content from a cache, a snoop request can be sent to one or more remote cache devices to determine if any other cache has a copy of the content. A link between the cache and the remote cache devices can include a snoop bypass device. The snoop bypass device can monitor content cached by the one or more remote devices on a cache line or coarser granularity. The snoop bypass device can respond to the snoop request with a negative indication based on a coarser granularity tracking of content of the one or more remote cache devices.

Abstract: An apparatus and method for scheduling threads on local and remote processing resources.

Abstract: An apparatus for testing integrated circuits (ICs) , includes a first thermal contact structure having a first surface to interface with a heat source and an opposing second surface to interface with a device under test (DUT). A second thermal contact structure is above the first thermal contact structure and separated therefrom by a variable-resistance thermal interface (VRTI) structure operable to couple or decouple the first and second thermal contact structures from one another. The VRTI structure has a maximal thermal conductivity associated with a first state, and a minimal thermal conductivity associated with a second state.

Abstract: In an example, an apparatus comprises a plurality of execution units, and a cache memory communicatively coupled to the plurality of execution units, wherein the cache memory is structured into a plurality of sectors, wherein each sector in the plurality of sectors comprises at least two cache lines. Other embodiments are also disclosed and claimed.

Abstract: A memory device includes a first electrode including a spin-orbit material, a magnetic junction on a portion of the first electrode and a first structure including a dielectric on a portion of the first electrode. The first structure has a first sidewall and a second sidewall opposite to the first sidewall. The memory device further includes a second structure on a portion of the first electrode, where the second structure has a sidewall adjacent to the second sidewall of the first structure. The memory device further includes a first conductive interconnect above and coupled with each of the magnetic junction and the second structure and a second conductive interconnect below and coupled with the first electrode, where the second conductive interconnect is laterally distant from the magnetic junction and the second structure.