Patents Examined by A. Gupta
  • Patent number: 11901596
    Abstract: The present disclosure relates generally to portable energy generation devices and methods. The devices are designed to covert formic acid into released hydrogen, alleviating the need for a hydrogen tank as a hydrogen source for fuel cell power. In particular, an electricity generation device for powering a battery comprising a formic acid reservoir containing a liquid consisting of formic acid; a reaction chamber capable of using a catalyst and heat to convert the formic acid to hydrogen and carbon dioxide; a fuel cell that generates electricity; a delivery system for moving converted hydrogen into the fuel cell; and a battery powered by electricity generated by the fuel cell is provided.
    Type: Grant
    Filed: January 27, 2022
    Date of Patent: February 13, 2024
    Assignee: King Abdullah University of Science and Technology
    Inventors: Kuo-Wei Huang, Junrong Zheng
  • Patent number: 11900871
    Abstract: A display device including: a display region including a first pixel region, a second pixel region, and a third pixel region; a dummy region including a first dummy region disposed between the second pixel region and the third pixel region; first, second, and third pixels respectively arranged in the first pixel region, the second pixel region, and the third pixel region in a matrix of vertical lines and horizontal lines; a data converter configured to receive first image data including effective data corresponding to the display region and dummy data corresponding to the dummy region and generate second image data by converting a gray scale value of dummy data corresponding to at least one region of the first dummy region in the first image data into a predetermined first gray scale value, the first gray scale value being between a lowest gray scale value and a highest gray scale value.
    Type: Grant
    Filed: February 17, 2023
    Date of Patent: February 13, 2024
    Assignee: Samsung Display Co., Ltd.
    Inventors: Ji Hyun Ka, Tae Hoon Kwon, Ki Myeong Eom, Chung Yi, Se Byung Chae, Deok Jun Choi, Moon Sang Hwang
  • Patent number: 11894567
    Abstract: The present disclosure discloses an end cover assembly, an energy storage device and electrical equipment. The end cover assembly includes an end cover provided with an outlet hole penetrating therethrough, an electrode terminal arranged on one side of the end cover, a sealing member including a first sealing portion and a plastic member including a first plastic portion. A projection, on the end cover of the electrode terminal along a thickness direction of the end cover covers the outlet hole, and a first gap surrounding the outlet hole is formed between the electrode terminal and the end cover. The first sealing portion fills one side of the first gap close to the outlet hole. The first plastic portion fills one side of the first gap away from the outlet hole; and a second gap is formed between the first sealing portion and the first plastic portion.
    Type: Grant
    Filed: June 29, 2023
    Date of Patent: February 6, 2024
    Assignees: SHENZHEN HITHIUM ENERGY STORAGE CONTROL TECHNOLOGY CO. LTD., XIAMEN HITHIUM ENERGY STORAGE TECHNOLOGY CO., LTD.
    Inventors: Jinyun Liang, Liangliang Zhang, Wancai Zhang, Feng Wang
  • Patent number: 11890467
    Abstract: Tumor Treating Fields (TTFields) can be used to treat tumors (and/or prevent metastases) in or near a person's neck by affixing a first transducer array (i.e., a set of electrode elements) to the person's head and affixing a second transducer array to the person's chest. Subsequently, an AC voltage at a desired frequency (e.g., 100-300 kHz) is applied between the first transducer array and the second transducer array. This induces an electric field that is strong enough to be effective (e.g., greater than 1 V/cm) in most of the person's neck. In some embodiments, the center of the first transducer array is positioned on the vertex of the head or on an upper surface of the person's head. In some embodiments, the second set of electrode elements is positioned immediately below the base of the neck.
    Type: Grant
    Filed: August 28, 2020
    Date of Patent: February 6, 2024
    Assignee: Novocure GmbH
    Inventors: Yissachar Avraham, Ariel Naveh, Zeev Bomzon
  • Patent number: 11893154
    Abstract: An electronic device, while the electronic device is worn over a predefined portion of the user's body, displays, via a display generation component arranged on the electronic device opposite the predefined portion of the user's body, a graphical representation of an exterior view of a body part that corresponds to the predefined portion of the user's body. The electronic device detects a change in position of the electronic device with respect to the predefined portion of the user's body. The electronic device, in response to detecting the change in the position of the electronic device with respect to the predefined portion of the user's body, modifies the graphical representation of the exterior view of the body part that corresponds to predefined portion of the user's body in accordance with the detected change in position of the electronic device with respect to the predefined portion of the user's body.
    Type: Grant
    Filed: February 8, 2023
    Date of Patent: February 6, 2024
    Assignee: APPLE INC.
    Inventors: Alfred B. Huergo Wagner, Seung Wook Kim, Felipe Bacim De Araujo E Silva, William A. Sorrentino, III, Thomas S. Hulbert, Karlin Y. Bark
  • Patent number: 11894577
    Abstract: Pouch cell having a positive contact lug and a negative contact lug, in which contact lugs electrical contact can be made with the pouch cell pouch cell and the pouch cell can be charged and discharged in this way, wherein the pouch cell is of planar design and has a flat cell surface which extends parallel in relation to the positive contact lug and the negative contact lug, wherein the positive contact lug has an upper positive connecting element and a lower positive connecting element, which positive connecting elements are arranged on opposite sides of the positive contact lug, and the negative contact lug has an upper negative connecting element and a lower negative connecting element, which negative connecting elements are arranged on opposite sides of the negative contact lug.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: February 6, 2024
    Assignee: Hilti Aktiengesellschaft
    Inventors: Matthias Lepiorz, Moses Ender, Klaus Hauser, Nora Martiny, Bernd Ziegler, Robert Stanger, Kathrin Sax
  • Patent number: 11894399
    Abstract: Hyperspectral resonant cavity imaging spectrometers and imaging systems incorporating the resonant cavity spectrometers are provided. The spectrometers include an array of photodetectors based on photosensitive semiconductor nanomembranes disposed between two dielectric spacers, each of the dielectric spacers having a thickness gradient along a lateral direction, such that the resonant cavity height differs for different photodetectors in the array.
    Type: Grant
    Filed: March 2, 2021
    Date of Patent: February 6, 2024
    Assignee: Wisconsin Alumni Research Foundation
    Inventors: Zhenqiang Ma, Zhenyang Xia, Ming Zhou, Qiaoqiang Gan, Zongfu Yu
  • Patent number: 11893961
    Abstract: Disclosed are examples for adjusting screen brightness based on screen content being presented on a display screen of a mobile device. The described examples may determine a time at which the screen content is to be evaluated. The screen content is categorized based on the evaluation. A category of the screen content may be input into a machine learning algorithm that may be used to determine whether a screen brightness adjustment is appropriate. If a screen brightness adjustment is appropriate, a degree of the screen brightness adjustment may be determined.
    Type: Grant
    Filed: October 19, 2022
    Date of Patent: February 6, 2024
    Assignee: Capital One Services, LLC
    Inventors: Jeremy Edward Goodsitt, Vincent Pham, Austin Grant Walters, Anh Truong, Galen Rafferty, Reza Farivar
  • Patent number: 11886673
    Abstract: Aspects of the present disclosure involve a system and a method for performing operations comprising: detecting physical touch of a touch-sensitive component on a back portion of a client device, the client device displaying a graphical user interface on a touch-sensitive display screen of a front portion of the client device; in response to detecting the physical touch, transmitting an electrical signal representing the physical touch of the touch-sensitive component on the back portion of the client device to the touch-sensitive display screen of the front portion of the client device; and causing an operation associated with the graphical user interface to be executed in response to the touch-sensitive display screen receiving the electrical signal representing the physical touch of the touch-sensitive component on the back portion of the client device.
    Type: Grant
    Filed: December 8, 2022
    Date of Patent: January 30, 2024
    Assignee: Snap Inc.
    Inventors: Shree K. Nayar, Chang Xiao, Changxi Zheng
  • Patent number: 11888038
    Abstract: An integrated circuit device includes a substrate having an active area therein, a bit line on the substrate, and a direct contact, which extends between the active area and the bit line and electrically couples the bit line to a portion of the active area. A spacer structure is also provided, which extends on sidewalls of the bit line and on sidewalls of the direct contact. A field passivation layer is provided, which extends between the sidewalls of the direct contact and the spacer structure. The spacer structure and the field passivation layer may include different materials, and the field passivation layer may directly contact the sidewalls of the direct contact. The field passivation layer can include nonstoichiometric silicon oxide SiOx, where 0.04?x?0.4, and may have a thickness of less than about 25 ?.
    Type: Grant
    Filed: September 29, 2021
    Date of Patent: January 30, 2024
    Inventor: Joonyoung Choi
  • Patent number: 11887972
    Abstract: A display device with a high luminance, a high contrast, and low power consumption is provided. The display device includes a transistor, a light-emitting element, a coloring layer, a phosphor layer, a first electrode, and a second electrode. The light-emitting element is electrically connected to the first electrode and the second electrode, the first electrode is electrically connected to the transistor, and the second electrode is positioned on the same plane as the first electrode. The coloring layer is positioned over the light-emitting element, the phosphor layer is positioned between the light-emitting element and the coloring layer, and the phosphor layer, the light-emitting element, and the coloring layer include a region in which they overlap with one another. The light-emitting element includes a light-emitting diode chip, and the phosphor layer has a function of emitting light of a complementary color of an emission color of the light-emitting element.
    Type: Grant
    Filed: May 8, 2019
    Date of Patent: January 30, 2024
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Koji Kusunoki, Yosuke Tsukamoto, Kensuke Yoshizumi
  • Patent number: 11881685
    Abstract: An ion generation device includes a discharge electrode substrate, an induction electrode substrate, and an insulating resin. The discharge electrode substrate on which a discharge electrode is mounted and a first electrode connected to the discharge electrode is formed. The induction electrode substrate on which an induction electrode configured to generate a discharge between the induction electrode and the discharge electrode and a second electrode connected to the induction electrode are formed. The insulating resin is filled at least between the discharge electrode and the induction electrode. The insulating resin provides insulation between the discharge electrode and the induction electrode. The first electrode and the second electrode are disposed and face each other at least partially. The first electrode, the second electrode, and the insulating resin interposed between the first electrode and the second electrode form a capacitor.
    Type: Grant
    Filed: November 20, 2019
    Date of Patent: January 23, 2024
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Nobuyuki Ohe, Tetsuya Ezaki, Satoshi Okano
  • Patent number: 11878163
    Abstract: Tumor treating fields (TTFields) can be delivered to a subject's body at higher field strengths by switching off one or more electrode elements in a transducer array that are overheating. This may be accomplished by using thermistors that sense the temperature of each electrode element. Portions of the wiring of each transducer array is shared between the electrode elements and the thermistors by using a plurality of conductors, each of which electrically connects (a) a pin of a connector, (b) a respective electrode element, and (c) a respective thermistor. In some embodiments, all of the thermistors are wired in series. In other embodiments, all the thermistors share a common connection.
    Type: Grant
    Filed: December 21, 2020
    Date of Patent: January 23, 2024
    Assignee: Novocure GmbH
    Inventor: Yoram Wasserman
  • Patent number: 11876255
    Abstract: The present disclosure relates to a sealing arrangement, comprising: an elastomeric sealing element, which comprises a foamed material containing microspheres, and a metal layer having a surface structuring, the surface structuring comprising a plurality of depressions, wherein the sealing element is configured as a coating of the metal layer and is arranged at least in some areas on the surface structuring, wherein a concentration of the microspheres in the sealing element, measured perpendicular to the surface of the metal layer, is inhomogeneous. The disclosure additionally relates to a plate assembly, to an electrochemical system, and to a method for producing the sealing arrangement.
    Type: Grant
    Filed: May 10, 2021
    Date of Patent: January 16, 2024
    Assignee: REINZ-DICHTUNGS-GMBH
    Inventors: Stephan Wenzel, Wolfgang Berroth, Bernd Gaugler, Kai-Uwe Lemke, Andrè Speidel
  • Patent number: 11874716
    Abstract: According to an example aspect of the present invention, there is provided apparatus comprising at least one processing core, at least one memory including computer program code, the at least one memory and the computer program code being configured to, with the at least one processing core, cause the apparatus at least to cause the apparatus to predict, based at least in part on a calendar application, a need for a rich media interface and to trigger startup of a higher capability processing device from among a low capability processing device and the higher capability processing device in the apparatus at a time that is selected based on the prediction.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: January 16, 2024
    Assignee: Suunto Oy
    Inventors: Erik Lindman, Jyrki Uusitalo, Timo Eriksson, Jari Akkila, Michael Miettinen, Niko Knappe
  • Patent number: 11876134
    Abstract: A semiconductor device includes a source region. A drain region has a first conductivity type and a second dopant concentration spaced apart from the source region. A first drift region is located between the source region and the drain region and has the first conductivity type and a first dopant concentration that is lower than the second dopant concentration of the drain region. An oxide structure includes a first portion on or over the first drift region and a tapered portion between the first portion and the drain region. A substrate surface extension is between the tapered portion and the drain region. A buffer region has the first conductivity type between the first drift region and the drain region and under the tapered portion of the oxide structure. The buffer region has a third dopant concentration between the second dopant concentration and the first dopant concentration.
    Type: Grant
    Filed: September 29, 2021
    Date of Patent: January 16, 2024
    Assignee: Texas Instruments Incorporated
    Inventor: Henry Litzmann Edwards
  • Patent number: 11872389
    Abstract: The present invention relates to a stimulation apparatus for applying electrical stimulation to a subject for stimulation application. Specifically, a stimulation apparatus according to the present invention comprises: a stimulation part comprising a first conductive member and a first surface which comes into contact with a subject for stimulation application and to which an alternating electric field transmitted from the subject for stimulation application upon contact is input; a conductive part comprising a second conductive member and positioned away from the stimulation part; and a connecting member for electrically connecting the stimulation part and conductive part.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: January 16, 2024
    Assignee: BARUN GONGHAK CO., LTD.
    Inventors: Jinkee Hong, Sangmin Lee
  • Patent number: 11862670
    Abstract: A semiconductor device includes a drift region, a dielectric film, and an anti-type doping layer. The drift region has a first type conductivity. The anti-type doping layer is located between the drift region and the dielectric film, and has a second type conductivity opposite to the first type conductivity so as to change a current path of a current in the drift region, to thereby prevent the current from being influenced by the dielectric film. A method for manufacturing a semiconductor device and a method for reducing an influence of a dielectric film are also disclosed.
    Type: Grant
    Filed: May 13, 2021
    Date of Patent: January 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsin-Fu Lin, Tsung-Hao Yeh, Chih-Wei Hung
  • Patent number: 11862699
    Abstract: A semiconductor structure includes: a substrate with conductive contact regions; a bit line structure and an isolation wall located on a sidewall of the bit line structure, the isolation wall includes at least one isolation layer including a first isolation part close to the bit line structure and a second isolation part deviating from the same, the second isolation part has doped ions, such that it has a greater hardness than the first isolation part, or has a smaller dielectric constant than the first isolation part; and a capacitor contact hole, which exposes the conductive contact region, and has a top width greater than a bottom width in a direction parallel to an orientation of the bit line structure.
    Type: Grant
    Filed: September 30, 2021
    Date of Patent: January 2, 2024
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventor: Jingwen Lu
  • Patent number: 11864469
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the first IMD layer; forming a bottom electrode layer and a pinned layer on the first IMD layer; forming a sacrificial layer on the pinned layer; patterning the sacrificial layer, the pinned layer, and the bottom electrode layer to form a first magnetic tunneling junction (MTJ); forming a second IMD layer around the first MTJ; removing the sacrificial layer to form a recess; forming a barrier layer and a free layer in the recess; forming a top electrode layer on the free layer; and patterning the top electrode layer and the free layer to form a second MTJ.
    Type: Grant
    Filed: September 5, 2022
    Date of Patent: January 2, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ching-Wen Hung, Ya-Sheng Feng