Abstract: A device comprising: a substrate; a first coating deposited on the substrate; an intermediate coating deposited on the first coating, wherein the first coating is interposed between the substrate and the intermediate coating; and a second coating deposited on the intermediate coating, wherein the intermediate coating is interposed between the first coating and the second coating, and the second coating is outermost and black. The substrate, the first coating, the intermediate coating and the second coating define at least one of a jewelry item and a component of a jewelry item.

Abstract: The present invention relates to coatings comprising or consisting of one or more ternary TM-diboride coating films. The ternary TM-diboride coating films showing exceptionally high phase stability and mechanical properties, even at high temperatures or even after exposition to high temperatures.

Abstract: An object of the present invention is to provide a fermented milk food, in which the viability of lactic acid bacteria during storage is high, the increase in acidity is suppressed, the viable cell count is less reduced, and the flavor is less deteriorated. A method for producing a fermented milk food by which the object was achieved is characterized by inoculating and culturing lactic acid bacteria in a culture medium containing a milk as a main component and supplemented with glucose in such an amount that glucose is substantially entirely assimilated at the time of completion of culturing and fructose in an amount twice or more the amount of glucose in a mass ratio.

Abstract: A wafer processing method includes a pattern region detecting step, an evaluation region setting step, and an evaluation region deploying step. The pattern region detecting step is a step of detecting a period and positional information in which a substantially identical image appears in an imaged image and detecting a pattern region corresponding to one period. The evaluation region setting step is a step of detecting a position in which no metallic pattern is formed on planned dividing lines and setting the position as an evaluation region for evaluating quality of a processed groove. The evaluation region deploying step is a step of recording the position of the evaluation region in the pattern region and deploying the evaluation region at similar positions in different pattern regions.

Abstract: In one aspect, coatings are described herein employing composite architectures providing high aluminum content and high hardness for various cutting applications. For example, a coated cutting tool comprises a substrate and a coating comprising a refractory layer deposited by physical vapor deposition adhered to the substrate, the refractory layer comprising a plurality of sublayer groups, a sublayer group comprising a titanium aluminum nitride sublayer and an adjacent composite sublayer comprising alternating nanolayers of titanium silicon nitride and titanium aluminum nitride.

Abstract: A method of processing a workpiece includes a thermosetting step of heating an area of an expandable sheet around a workpiece to a predetermined temperature or higher and thereafter cooling the heated area of the expandable sheet to make the area harder than before the area has been heated, and after the thermosetting step, an expanding step of expanding the area of the expandable sheet around the workpiece in planar directions to divide the workpiece into chips or to increase distances between the adjacent chips.

Abstract: A variable bidirectional electrostatic filter system with an adjustable distance between a charging part and a dust collecting part is provided herein and includes a high voltage applying means configured to supply a high voltage; a filter housing; a dust collecting part; a forward charging part; a reverse charging part; a forward movement rail installed in the filter housing and configured to adjust a distance from an amplification section while forming the amplification section between the forward charging part and the dust collecting part; a reverse movement rail installed in the filter housing; and a control unit providing an amplification section, in which the charged capturing targets are agglomerated, between the charging part and the dust collecting part and by adjusting the distance from the amplification section prevents unnecessary waste of energy and maintain dust collecting efficiency.

Abstract: A wafer processing method for forming a modified layer within a wafer along planned dividing lines forms the modified layer within the wafer, positions a condensing point within the wafer or at a top surface of the wafer and applies a second laser beam while moving the condensing point, images reflected light, and determines a processed state of the wafer on the basis of an imaged image. The second laser beam is formed such that a sectional shape of the second laser beam in a plane perpendicular to a traveling direction of the second laser beam is not axisymmetric with respect to an axis along the planned dividing lines.

Abstract: A filter media includes flat sheets that are corrugated into a honeycomb matrix wherein air flows through the material and airborne contaminants are captured on the sidewalls of the material, wherein an active electrostatic field is applied to the flat sheets.

Abstract: Some embodiments include an assembly having a memory stack which includes dielectric levels and conductive levels. A select gate structure is over the memory stack. A trench extends through the select gate structure. The trench has a first side and an opposing second side, along a cross-section. The trench splits the select gate structure into a first select gate configuration and a second select gate configuration. A void is within the trench and is laterally between the first and second select gate configurations. Channel material pillars extend through the memory stack. Memory cells are along the channel material pillars.

Abstract: A hard coating includes a three kinds of layers that are alternately laminated. The three kinds of layers consist of a single composition layer and two kinds of nanolayer-alternated layers. The single composition layer is constituted by one of an A composition (nitride of AlCrSi?), a B composition (nitride of AlTiSi?) and a C composition (nitride of AlCr(SiC)?). The two kinds of nanolayer-alternated layers include nanolayers which are alternately laminated and which are constituted by two of three combinations consisting of a combination of the A composition and B composition, a combination of the A composition and C composition and a combination of the B composition and C composition. The single composition layer has a thickness of 0.5-1000 nm. Each of the nanolayers constituting the two kinds of nanolayer-alternated layers has a thickness of 0.5-500 nm, and each of the two kinds of nanolayer-alternated layers has a thickness of 1-1000 nm.

Abstract: A hard coating includes a three kinds of layers that are alternately laminated. The three kinds of layers consist of a single composition layer and two kinds of nanolayer-alternated layers. The single composition layer is constituted by one of an A composition (nitride of AlCrSi?), a B composition (nitride of CrBSi?) and a C composition (nitride of AlCr(SiC)?). The two kinds of nanolayer-alternated layers include nanolayers which are alternately laminated and which are constituted by two of three combinations consisting of a combination of the A composition and B composition, a combination of the A composition and C composition and a combination of the B composition and C composition. The single composition layer has a thickness of 0.5-1000 nm. Each of the nanolayers constituting the two kinds of nanolayer-alternated layers has a thickness of 0.5-500 nm, and each of the two kinds of nanolayer-alternated layers has a thickness of 1-1000 nm.

Abstract: A hard coating includes a three kinds of layers that are alternately laminated. The three kinds of layers consist of a single composition layer and two kinds of nanolayer-alternated layers. The single composition layer is constituted by one of an A composition (nitride of AlCr?), a B composition (nitride of AlTiCr?) and a C composition (nitride of AlCr(SiC)?). The two kinds of nanolayer-alternated layers include nanolayers which are alternately laminated and which are constituted by two of three combinations consisting of a combination of the A composition and B composition, a combination of the A composition and C composition and a combination of the B composition and C composition. The single composition layer has a thickness of 0.5-1000 nm. Each of the nanolayers constituting the two kinds of nanolayer-alternated layers has a thickness of 0.5-500 nm, and each of the two kinds of nanolayer-alternated layers has a thickness of 1-1000 nm.

Abstract: A semiconductor device according to the present disclosure includes a gate extension structure, a first source/drain feature and a second source/drain feature, a vertical stack of channel members extending between the first source/drain feature and the second source/drain feature along a direction, and a gate structure wrapping around each of the vertical stack of channel members. The gate extension structure is in direct contact with the first source/drain feature.

Abstract: A hard coating includes three kinds of alternately laminated layers. The three kinds of layers consist of two kinds of single composition layers and a nanolayer-alternated layer. The two kinds of single composition layers are constituted by respective two of an A composition, a B composition and a C composition, wherein the A composition is a nitride of AlCr?, the B composition is a nitride of AlCrSi?, and the C composition is a nitride of AlCr(SiC)?. The nanolayer-alternated layer includes two kinds of nanolayers which are constituted by respective two of the A composition, the B composition and the C composition and which are alternately laminated. Each of the two kinds of single composition layers has a thickness of 0.5-1000 nm. Each of the two kinds of nanolayers has a thickness of 0.5-500 nm, and the nanolayer-alternated layer has a thickness of 1-1000 nm.

Abstract: A coated cutting tool includes a substrate and a coating, wherein the coating has a PVD layer being a compound of the formula Ti1-xSixCaNbOc, wherein 0.10<x?0.30, 0?a?0.75, 0.25?b?1, 0?c?0.2, and a+b+c=1. The PVD layer is a NaCl structure solid solution. The disclosure further relates to a method for producing the PVD layer by cathodic arc evaporation using a pulsed bias voltage of from about ?40 to about ?450 V to the substrate and using a duty cycle of less than about 12% and a pulsed bias frequency of less than about 10 kHz.

Abstract: A conductive fabric filter includes a non-woven fabric coated with copper by electroless plating, and the non-woven fabric has pores and is conductive.

Abstract: Provided are a semiconductor device and a method of forming the same. The semiconductor device includes a substrate, a plurality of semiconductor nanosheets, a source/drain (S/D) region, a gate stack, and a liner layer. The substrate includes at least one fin. The plurality of semiconductor nanosheets are stacked on the at least one fin. The S/D region abuts the plurality of semiconductor nanosheets. The gate stack wraps the plurality of semiconductor nanosheets. The liner layer lines a bottom surface and a sidewall of the S/D region and is sandwiched between the S/D region and the gate stack.

Abstract: A covered cutting tool having a cemented carbide and a covering layer formed on the cemented carbide. The covered cutting tool includes a rake face, a flank face, and a cutting edge line part located between the rake face and the flank face. The coating layer includes a compound layer containing a compound having a composition represented by (AlxTi1-x)N. The average thickness T1 of the covering layer in the cutting edge line part and the average thickness T2 of the coating layer in the rake face at a position 2 mm or more away from the cutting edge line part toward the rake face are within specific ranges and satisfy T2<T1. The residual stress S1 of the cemented carbide in the cutting edge line part and the residual stress S2 of the cemented carbide in the rake face at a position 2 mm or more away from the cutting edge line part toward the rake face satisfy S2<S1.

Abstract: This invention relates to local administration of a bone-forming agent and at least one anti-resorptive agent to treat osteoporosis and related disorders.