Abstract: The present invention relates to a method for crystallization of a metal oxide thin film by using thermal dissipation annealing (TDA) and exhibits an effect enabling high-temperature thermal annealing, which is essential for the performance improvement of a semiconductor material, a sensor material, and the like deposited on a thin-plate substrate, even without degrading the performance of the thin-plate substrate. In addition, a metal oxide thin film prepared by the method of the present invention is in the form of a two-dimensional nanosheet, and thus may have a low defect density (high crystallinity) and a wide surface area. Accordingly, based on the improved photosensitivity and photoreactivity, the metal oxide thin film may be utilized in a high-performance photoelectric device.

Abstract: A plasma processing apparatus includes: a stage including a substrate placing portion and a peripheral portion surrounding the substrate placing portion; a focus ring placed on the peripheral portion of the stage; a cover ring surrounding an outer periphery of the stage; a conductive ring placed on the cover ring; a radio-frequency power supply coupled to the stage; first and second power supply lines electrically connected to the focus ring and the conductive ring, respectively; and a DC power supply electrically connected to the focus ring and the conductive ring via the first and second power supply lines, respectively. A first surface on an outer periphery of the focus ring and a second surface on an inner periphery of the conductive ring are separated from each other to face each other. The cover ring includes a separating portion that separates the focus ring and the conductive ring.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space therein; a support unit disposed within the treating space and configured to support a substrate; and a plasma generation unit configured to generate a plasma from a process gas supplied to the treating space; and wherein the plasma generation unit comprises: a bottom electrode member; and a top electrode member opposite to the bottom electrode member, wherein the top electrode member comprises: an electrode plate including an electrode; a first plate made of a different material from the electrode plate; and a second plate, and wherein the second plate, the electrode plate, and the first plate are stacked on one another.

Abstract: An etching method according to one embodiment of the present disclosure includes step (a), step (b), step (c), step (d), and step (e). Step (a) provides a substrate that has a silicon-containing film which does not include oxygen and nitrogen, and a mask formed on the silicon-containing film. Step (b) etches the silicon-containing film with plasma generated from a first processing gas that includes a halogen-containing gas to form a recess portion. Step (c) forms an oxide film in the recess portion with plasma generated from a second processing gas that includes an oxygen-containing gas and a gas including carbon, hydrogen, and fluorine. Step (d) further etches the silicon-containing film with the plasma generated from the first processing gas after step (c). Step (e) repeatedly executes step (c) and step (d) a preset number of times.

Abstract: An apparatus for treating a substrate includes a housing including an open top and a treatment space therein, a gas supply unit configured to supply gas to the treatment space, a support unit including a chuck configured to support the substrate in the treatment space and an upper electrode provided to surround the check when viewed from the top, a dielectric plate unit including a dielectric plate arranged to oppose the substrate supported by the support unit in the treatment space, an upper electrode unit coupled to the dielectric plate unit and including an upper electrode arranged to oppose the lower electrode, and an aligning unit configured to align a horizontal arrangement of the dielectric plate unit, in which a lid extending from the housing in the horizontal direction and coupled to the upper electrode unit is provided on the housing, and the aligning unit is coupled to the lid.

Abstract: A device for processing at least one semiconductor substrate. The device includes: a reactor with a wall which encloses a reaction chamber; a closing structure for loading the reaction chamber with at least one semiconductor substrate and for unloading the at least one semiconductor substrate from the reaction chamber and for hydrofluoric acid-tight closure of the reaction chamber; and a heating device designed to establish at least one specified temperature in at least one temperature range in the reaction chamber. The device further includes: a gas inlet designed to supply hydrofluoric acid in vapor form to the reaction chamber, and a gas outlet designed to remove hydrofluoric acid in vapor form from the reaction chamber; and a gas supply system which is coupled to the gas inlet and is designed to supply hydrofluoric acid in vapor form to the gas inlet at the specified temperature.

Abstract: A solid material container for supplying solid materials housed inside by evaporating the solid materials, and includes a carrier gas introduction line, a first filling section that is filled with the solid material, a second filling section that is located in at least a part of an outer periphery of the first filling section, and is filled with the solid material, at least one tray-shaped third filling section that is disposed on the ceiling side of an interior of the solid material container, and a solid material lead-out line.

Abstract: A system includes a plurality of spindle arms located above a plurality of stations in a processing chamber to transport a semiconductor substrate between the stations. The spindle arms reside in the processing chamber during processing of the semiconductor substrate. The system comprises first gas lines arranged below the stations to supply a purge gas. The system comprises second gas lines extending upwards from the first gas lines to supply the purge gas to the spindle arms during the processing of the semiconductor substrate in the processing chamber.

Abstract: There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor wafer processing device comprising a chamber, and, a showerhead configured to supply a gas into the chamber, wherein the showerhead includes, a plate, a plurality of first spray hole groups in a first row from a center of the plate, and a second spray hole group in a second row outside the first row, wherein each of the first spray hole groups includes a plurality of first spray holes, and when L is an average value of distances from the center of the plate to each spray hole of each of the first spray hole groups, the number of first spray holes where a distance from the center of the plate is smaller than L is more than the number of first spray holes where the distance from the center of the plate is greater than L.

Abstract: Systems and apparatus for a reduced mass substrate support are disclosed, according to certain embodiments. A front side pocket is provided for support of a substrate, while a backside pocket is provided that reduces the mass of the substrate support. By providing the backside pocket, the mass of the overall substrate support is reduced, providing faster thermal cycling times for the substrate support and reducing the weight of the substrate support for transport. Lift pin systems, according to disclosed embodiments, are compatible with existing pedestal systems by providing a hollow extension from each lift pin hole that extends from a bottom of the backside pocket to provide support for lift pin insertion and operation.

Abstract: A mask includes a first sub-mask, a second sub-mask facing the first sub-mask in a first direction and including a boundary surface contacting a boundary surface of the first sub-mask at a boundary portion, and a coupling bar disposed on a lower surface of the first sub-mask and a lower surface of the second sub-mask to connect the first sub-mask to the second sub-mask. Each of the first sub-mask, the second sub-mask, and the coupling bar includes openings. The openings of the coupling bar are aligned with part of the openings of the first and second sub-masks in a thickness direction of the coupling bar.

Abstract: An atomic layer deposition apparatus comprising a first single substrate process chamber, a second single substrate process chamber, and a transfer mechanism configured to transfer the substrate between the first and the second process chamber. Wherein both the first and second single substrate process chambers are bounded by a bottom part and a top part for accommodating a substantially flat substrate between them.

Abstract: A semiconductor manufacturing apparatus includes a process container. A holder is disposed in the process container, and is arranged to hold a substrate including a first surface and a second surface on an opposite side to the first surface. The holder includes a mask portion that covers a first area of the first surface and exposes a second area different from the first area. The mask portion includes a first layer in contact with the first surface of the substrate and a second layer spaced further from the substrate than the first layer. The first layer is recessed further than the second layer in a direction toward the first area in an edge portion of the mask portion that partitions the first area and the second area.

Abstract: A display substrate, a method and a device for manufacturing the display substrate, and a display device are provided. The method includes shielding a to-be-cut region of a to-be-evaporated substrate with a shielding member and evaporating a common layer material onto the to-be-evaporated substrate to form a common layer of the display substrate. The display substrate includes the to-be-cut region and a display region surrounding the to-be-cut region, and the common layer material is deposited onto the display region rather than the to-be-cut region.

Abstract: A chemical vapor deposition system comprises a reactor including at least one wall extending between an inlet end and an outlet end, and an internal volume defined by the at least one wall, the inlet end, and the outlet end. The reactor further comprises a heat source in thermal communication with the internal volume, and a solid precursor container removably placed within the internal volume. The solid precursor container includes at least one internal cavity for holding an amount of the solid precursor, and an opening fluidly connecting the at least one internal cavity to the internal volume of the reactor. The solid precursor comprises at least one of aluminum, zirconium, hafnium, and a rare earth metallic element.

Abstract: A deposition mask according to an embodiment comprises a metal plate comprising a deposition area and a non-deposition area. The through-hole comprises a communicating portion connected to a first facing hole configured such that the first diameter slopes at an acute angle with regard to one surface in the transverse-axis direction of the metal plate, and a communicating portion connected to a second facing hole configured such that the first diameter slopes at an obtuse angle with regard to one surface in the transverse-axis direction of the deposition mask. In the longitudinal-axis direction of the metal plate, the first facing hole and the second facing hole are arranged alternately in a row. In the transverse-axis direction of the metal plate, the first facing hole and the second facing hole are arranged alternately in a row.

Abstract: Gas injector with a vacuum channel having an inlet opening in the front face and an outlet opening in the back face of the injector are described. The vacuum channel comprises a first leg extending a first length from the inlet opening in the front face at a first angle relative to the front face and a second leg extending a second length from the first leg to the outlet opening in the back face at a second angle relative to the front face. Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.

Abstract: Disclosed in the present invention is a vacuum coating device for uniformly distributing metal steam by using a guide plate type structure. The vacuum coating device comprises a crucible, wherein an induction heater for heating molten metal in the crucible to form metal steam is arranged outside of the crucible. A top of the crucible is connected to a flow distribution tank body by means of a metal steam pipeline. A horizontal core rod and a pressure stabilizing plate are arranged inside the flow distribution tank body. The core rod is located below the pressure stabilizing plate. A coating nozzle is arranged at the top of the flow distribution tank body. An induction coil is arranged on the outer side of the flow distribution tank body. A pressure regulating valve is arranged on the metal steam pipeline.

Abstract: A substrate processing system includes an upper electrode and a lower electrode arranged in a processing chamber. A gas delivery system is configured to selectively deliver at least one of a precursor gas, one or more deposition carrier gases, and a post deposition purge gas. An RF generating system is configured to deposit film on a substrate by generating RF plasma in the processing chamber between the upper electrode and the lower electrode while the precursor gas and the one or more deposition carrier gases are delivered by the gas delivery system. A bias generating circuit is configured to selectively supply a DC bias voltage to one of the upper electrode and the lower electrode while the post deposition purge gas is delivered by the gas delivery system. The post deposition purge gas that is delivered by the gas delivery system includes a reactant gas.

Abstract: Structures (2, 2A to 2P) according to the present disclosure have respective bases (10, 10A), electrode layers, and terminals. The bases (10, 10A) are made of a ceramic. The electrode layers (111, 111C, 111D, 111F, 111M, 111N, 111O) are located inside the respective bases (10, 10A). The terminals (41, 41G, 41H, 41I, 41J, 41K, 41L) are electrically connected to the respective electrode layers (111, 111C, 111D, 111F, 111M, 111N, 111O) at respective tip portions of the terminals. Further, the terminals (41, 41G, 41H, 41I, 41J, 41K, 41L) are in contact with the respective electrode layers (111, 111C, 111D, 111F, 111M, 111N, 111O) at respective tip surfaces and side surfaces of the terminals.