Abstract: The reaction chamber (100) is designed for a reactor (100) for deposition of layers of semiconductor material on substrates; it comprises a tube (110) and an injector (20) and a holder (30); the tube (110) is made of quartz and has a cylindrical or prismatic shape and surrounds a reaction and deposition zone; the injector (20) is arranged to inject precursor gases into the reaction and deposition zone; the holder (30) is arranged to support a substrate in the reaction and deposition zone during deposition processes; graphite susceptor elements (10, 40, 50) are located inside the tube (110) for heating the reaction and deposition zone and components inside the reaction and deposition zone; an inductor system (60, 70) is located outside the tube (110) for providing energy to the susceptor elements (10, 40, 50) by electromagnetic induction; a rotating element (80) in the form of a cylindrical or prismatic tube is located inside the reaction and deposition zone and surrounds the injector (20).

Abstract: A substrate processing apparatus, a method, and a program for controlling temperature of the substrate processing apparatus. A substrate processing apparatus comprising: a mounting table configured to hold a substrate to be processed in a vacuum processing container; a heat transfer gas container placed on a back side of the mounting table with a gap between the mounting table and the heat transfer gas container and configured to be cooled by a refrigerator; and a control device configured to control heating of the refrigerator to the vicinity of a first temperature on the basis of a temperature of a first control point provided near the refrigerator and then switching the heating control for the refrigerator on or off.

Abstract: A batch-type apparatus for atomic layer etching (ALE), which is capable of ALE-processing several wafers at the same time, and an ALE method and a semiconductor device manufacturing method based on the batch-type apparatus, are provided. The batch-type apparatus for ALE includes a wafer stacking container in which a plurality of wafers are arranged in a vertical direction, an inner tube extending in the vertical direction, a plurality of nozzles arranged in a first outer portion in the inner tube in a horizontal direction, and a heater surrounding the inner tube and configured to adjust a temperature in the inner tube, wherein gas injection holes are formed corresponding to a height of the plurality of wafers in each of the plurality of nozzles, and a gas outlet is formed in a second outer portion in the inner tube, opposite to the first outer portion.

Abstract: An exhaust device including an exhaust mechanism and an exhaust unit is provided. The exhaust mechanism includes a first blade unit and a second blade unit provided in an exhaust space of a processing vessel including a processing space of a vacuum atmosphere for applying a process to a workpiece. The first blade unit and the second blade unit are arranged coaxially with a periphery of the workpiece, and at least one of the first blade unit and the second blade unit is rotatable. The exhaust unit is provided at a downstream side of the exhaust mechanism and communicates with the exhaust space. The exhaust unit is configured to exhaust gas in the processing vessel.

Abstract: A hybrid mask stick and a mask frame assembly employing the same are provided. The mask frame assembly includes: a mask frame; and a mask stick assembly including a first mask stick that extends in a first direction, a second mask stick that extends in a second direction intersecting the first direction, and a plurality of third mask sticks that is coupled to ends of the first mask stick and the second mask stick and defines a plurality of deposition areas, wherein a thickness of the first mask stick is different from a thickness of the second mask stick, and a partial etching portion is arranged in a portion where the first mask stick and the second mask stick are coupled to each other.

Abstract: An evaporation apparatus is described, particularly for evaporating a reactive material such as lithium. The evaporation apparatus includes an evaporation crucible for evaporating a liquid material, a material conduit for supplying the liquid material to the evaporation crucible, and a valve configured to close the material conduit by solidifying a part of the liquid material in the material conduit with a cooling device. The valve may include a cooling gas supply for a cooling gas, and the cooling device may be configured to cool the liquid material with the cooling gas. Further described are a vapor deposition apparatus for coating a substrate as well as an evaporation method.

Abstract: Systems and methods for depositing materials on a substrate via OVJP are provided. A float table and grippers are used to move and position the substrate relative to one or more OVJP print bars to reduce the chance of damaging or compromising the substrate or prior depositions.

Abstract: A vapor deposition apparatus includes a chamber configured to operate at vacuum and at least one crucible in the chamber. The crucible is configured to receive an ingot, a feeder operable to move the ingot with respect to the at least one crucible, and a heater in the chamber and configured to heat a hot zone between the at least one crucible and the feeder. A method for vapor deposition is also disclosed.

Abstract: A physical vapor deposition (PVD) system is provided. The PVD system includes a PVD chamber defining a PVD volume within which a target material of a target is deposited onto a wafer. The PVD system includes the target in the PVD chamber. The target is configured to overlie the wafer. An edge of the target extends from a first surface of the target to a second surface of the target, opposite the first surface of the target. A first portion of the edge of the target has a first surface roughness. The first portion of the edge of the target extends at most about 6 millimeters from the first surface of the target to a second portion of the edge of the target. The second portion of the edge of the target has a second surface roughness less than the first surface roughness.

Abstract: Provided herein are approaches for providing a more uniform ion flux and ion angular distribution across a wafer to minimize etch yield loss resulting from etch profile variations. In some embodiments, a system may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, wherein the plasma source comprises a plasma shaper extending into the plasma chamber from a wall of the chamber housing. The plasma shaper may include a shaper wall coupled to the wall of the chamber housing, and a shaper end wall connected to the shaper wall, the shaper end wall defining an indentation extending towards the wall of the chamber housing.

Abstract: A carbon nanotube preparation system, including: a pre-growth tube for an early pre-reaction of raw materials before generation of carbon nanotubes; an atomizer for atomizing the carbon nanotube raw materials and then spraying the atomized raw materials into the pre-growth tube; the atomizer is provided at the front end of the pre-growth tube, and has a spray output tube that extends into the pre-growth tube; a growth tube for generating carbon nanotubes and continuous growth of the generated carbon nanotubes; the front end of the growth tube is hermetically connected to the rear end of the pre-growth tube; and a gas curtain generator for forming a gas curtain enclosing the atomized raw materials around the outlet of the spray output tube, and the gas curtain extends parallel to the extension direction of the pre-growth tube; the gas curtain generator is provided inside the pre-growth tube.

Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.

Abstract: The present disclosure relates to a mask, a mask device and a mask design method. The mask includes: a pattern area, wherein the pattern area includes a plurality of openings, among which adjacent openings are spaced apart by a first rib, and at least one of the plurality of openings has a non-straight side, two first straight sides intersecting with the non-straight side, and a second straight side opposite to the non-straight side and intersecting with the first straight sides; and a second rib located at an edge of the pattern area, wherein the second rib is provided with a cutout for compensating for stretch deformation of the non-straight side, extending lines of the two first straight sides extending toward the second rib along a first direction intersect with the second rib to obtain a first area, and the cutout is located at least within the first area.

Abstract: An apparatus which selectively etches a first region with respect to a second region made of a material different from that of the first region. The apparatus is controlled to perform a first step for generating, in a processing container housing a workpiece to be treated, a plasma of a treatment gas from a gas supply including a fluorocarbon gas, an oxygen-containing gas, and an inert gas, and forming a deposit including fluorocarbon on the object to be treated, and a second step for etching the first region with radicals of the fluorocarbon included in the deposit. The apparatus is also controlled to perform the first step and the second step repeatedly.

Abstract: A gas manifold includes a gas inlet surface having a first and second gas input port and a gas outlet surface. A first internal chamber is coupled to the first gas input port. A first plurality of gas conduits, each including an input coupled to the first internal chamber and an outlet at the gas outlet surface where a direction of at least one of the conduits in the first plurality of gas conduits relative to the gas outlet surface is different. A second internal chamber is coupled to the second gas input port and is isolated from the first internal chamber. A second plurality of gas conduits, each including an input coupled to the second internal chamber and an outlet at the gas outlet surface. A direction of at least one of the conduits in the second plurality of gas conduits relative to the gas outlet surface is different.

Abstract: A material deposition apparatus for depositing an evaporated material onto a substrate is provided. The material deposition apparatus includes a processing drum having a cooler configured to control a substrate temperature during processing of a substrate on the processing drum; a roller guiding the substrate towards the processing drum; a first heater assembly positioned to heat the substrate in a free-span area between the roller and the processing drum; a second heater assembly positioned to heat the substrate while being supported on the processing drum; at least one deposition source provided along a substrate transport path downstream of the second heater assembly; a substrate speed sensor providing a speed signal correlating with a substrate transportation speed; and a controller having an input for the speed signal configured to control at least the first heater assembly.

Abstract: A film mask, a manufacturing method thereof, a display panel and a display device are provided. The mask includes a frame and a first align mask. The frame includes two first frame edges extending along a first direction and arranged at intervals along a second direction and two second frame edges extending along the second direction and arranged at intervals along the first direction. The first frame edges and the second frame edges intersect to form a quadrilateral. The first frame edges and the second frame edges include first surfaces and second surfaces which are oppositely disposed. The first surfaces of at least three angles of the four angles are provided with the first align mask. The first align mask is provided with a first align identifier. The first direction intersects with the second direction.

Abstract: A vacuum chamber and an arrangement for atomic layer deposition. The vacuum chamber includes a loading wall provided with a loading opening, a back wall opposite the loading wall, and a first direction extending in a direction between the loading wall and the back wall. The vacuum chamber further includes a first vacuum chamber support rail inside the vacuum chamber and extending in the first direction, and a second vacuum chamber support rail inside the vacuum chamber and extending in the first direction and arranged spaced apart from the first vacuum chamber support rail. The first vacuum chamber support rail is arranged independently movable in vertical direction, and the second vacuum chamber support rail is arranged independently movable in vertical direction.

Abstract: A mask assembly includes a first mask area including first opening areas, and a second mask area including second opening areas having centers located at vertices of virtual squares in a row direction and a column direction, half-etching areas having centers located at centers of the virtual squares, and a non-etching area surrounding the second opening areas and the half-etching areas. Each of the second opening areas includes a base portion and at least one protrusion portion protruding from the base portion.

Abstract: A vacuum deposition facility for continuously depositing, on a running substrate, coatings formed from metal or metal alloy, and including: a central casing including a vapor jet coater, the inner walls of the central casing being suited to be heated at a temperature above the condensation temperature of the metal or metal alloy vapors, a vapor trap located at the substrate exit of the central casing, the inner walls of the vapor trap being suited to be maintained at a temperature below the condensation temperature of the metal or metal alloy vapors, the passage linking the central casing to the vapor trap including at least one thermal connector extending at least from the inner walls of the central casing to the inner walls of the vapor trap.