Abstract: Techniques for controlling a solid precursor vapor source are provided. An example method disclosure includes providing a carrier gas to a precursor material in a sublimation vessel, such that the sublimation vessel includes an inlet area and an outlet area configured to enable the carrier gas to flow through the precursor material, and at least one thermal device configured to add or remove heat from the sublimation vessel, determining a sublimation temperature value and a delta temperature value based on the precursor material and the carrier gas, setting a first temperature in the sublimation vessel based on the sublimation temperature value and the delta temperature value, such that the first temperature is measured proximate to the inlet area, and setting a second temperature in the sublimation vessel based on the sublimation temperature value, such that the second temperature is measured proximate to the outlet area.

Abstract: A mask includes a body unit through which a deposition opening is defined, and a protrusion unit through which a pattern opening is defined and which protrudes from a corner of the body unit, where a thickness of the body unit is greater than a thickness of the protrusion unit.

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.

Abstract: A hybrid mask stick and a mask frame assembly employing the same are provided. The mask frame assembly includes: a mask frame; and a mask stick assembly including a first mask stick that extends in a first direction, a second mask stick that extends in a second direction intersecting the first direction, and a plurality of third mask sticks that is coupled to ends of the first mask stick and the second mask stick and defines a plurality of deposition areas, wherein a thickness of the first mask stick is different from a thickness of the second mask stick, and a partial etching portion is arranged in a portion where the first mask stick and the second mask stick are coupled to each other.

Abstract: A substrate processing apparatus including: a processing container; an injector provided inside the processing container to have a shape extending in a longitudinal direction and configured to supply a processing gas; a holder fixed to the injector; a windmill fixed to the holder; a first driving-gas supply part configured to supply a driving-gas that rotates the windmill in a first direction; a second driving-gas supply part configured to supply the driving-gas that rotates the windmill in a second direction opposite the first direction; and a driving-gas controller configured to control the supply of the driving-gas from the first driving-gas supply part and the second driving-gas supply part. The injector is rotated about the longitudinal direction corresponding to a rotational axis by rotating the windmill through the supply of the driving-gas from at least one of the first and second driving-gas supply parts under the control of the driving-gas controller.

Abstract: One or more heating assemblies for a material deposition apparatus for pre-heating a substrate before entering a material deposition area and/or for post-heating the substrate after exiting the material deposition area are described.

Abstract: Systems and methods for depositing materials on a substrate via OVJP are provided. A float table and grippers are used to move and position the substrate relative to one or more OVJP print bars to reduce the chance of damaging or compromising the substrate or prior depositions.

Abstract: The invention relates to an injector configured for arrangement within a reaction chamber of a substrate processing apparatus to inject gas in the reaction chamber. The injector may be elongated along a first axis and configured with an internal gas conduction channel extending along the first axis and provided with at least one gas entrance opening and at least one gas exit opening. The injector may have a width extending along a second axis perpendicular to the first axis substantially larger than a depth of the injector extending along a third axis perpendicular to the first and second axis. The wall of the injector may have a varying thickness.

Abstract: Aspects of the present disclosure generally relate to apparatuses and methods for edge ring replacement in processing chambers. In one aspect, a carrier for supporting an edge ring is disclosed. In other aspects, robot blades for supporting a carrier are disclosed. In another aspect, a support structure for supporting a carrier in a degassing chamber is disclosed. In another aspect, a method of transferring an edge ring on a carrier is disclosed.

Abstract: The present invention provides a technology capable of inhibiting, in a vacuum processing apparatus that conveys a plurality of substrate holders along a conveying path formed to have a projected shape on a vertical surface, the projected shape being a continuous ring shape, dust from being generated during conveyance of a substrate holder. The present invention includes, in a vacuum chamber 2, an anti-sag member 35 assembled to a first drive unit 36 provided on an outer side with respect to a conveying direction of the conveying path, the vacuum chamber 2 including a conveying path formed to have a projected shape on the vertical surface, the projected shape being a continuous ring shape, a single vacuum atmosphere being formed in the vacuum chamber 2.

Abstract: A deposition apparatus according to one aspect of the present disclosure includes a vacuum vessel, a rotary table rotatably disposed in the vacuum vessel, a heating device provided below the rotary table, and a radiation adjusting member. The rotary table is configured such that multiple substrates can be placed on the rotary table along a circumferential direction of the rotary table. The heating device is configured to heat the multiple substrates by thermal radiation, and the radiation adjusting member is configured to adjust an amount of radiant heat from the heating device to the plurality of substrates.

Abstract: The invention relates to a microwave plasma-assisted deposition modular reactor for manufacturing synthetic diamond.

Abstract: There is provided an injector that extends in a longitudinal direction, including: a gas introduction part having a circular or a regular polygonal shape in a cross section perpendicular to the longitudinal direction and having no discharge holes; and a gas supply part having a protruded portion in one direction in the cross section perpendicular to the longitudinal direction, and having a plurality of discharge holes formed in a leading end of the protruded portion along the longitudinal direction, wherein a first end of the gas supply part in the longitudinal direction is connected to the gas introduction portion.

Abstract: There is provided a vapor deposition mask including: a resin mask including a plurality of resin mask openings corresponding to a pattern to be produced by vapor deposition; and a metal mask including a metal mask opening, the resin mask and the metal mask being stacked such that the resin mask openings overlap with the metal mask opening, wherein a shape of the metal mask opening as the metal mask is seen in plan view includes a polygon as a basic shape and an elongation part, added to the polygon, the elongation part elongating a length of a whole periphery of the polygon.

Abstract: Examples of a substrate processing apparatus includes a substrate carrier apparatus including a shaft, at least one carrier arm that is fixed to the shaft and rotates as the shaft rotates, and at least one thermometer fixed to the carrier arm, a susceptor, a heater that heats the susceptor, a temperature regulator that controls the heater, and a control unit that acquires a measured temperature, which is a surface temperature, of the susceptor obtained by the thermometer by bringing the carrier arm close to the susceptor and control the temperature regulator.

Abstract: A method and a vacuum-coating system (10) for coating a strip-shaped material (11), in particular made of metal, are disclosed. Thereby, the strip-shaped material (11) is moved over a conveying section (12) in a transport direction (T) and vacuum-coated within a coating chamber (14) in which a vacuum is applied. When viewed in the transport direction (T) of the strip-shaped material (11), at least one trimming shear (38) is arranged upstream of the coating chamber (14), with which the strip-shaped material (11) is trimmed at at least one strip edge, preferably at both strip edges, in order to produce a constant width for the strip-shaped material (11) over its longitudinal extension.

Abstract: Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The second surface of the faceplate and the substrate support may at least partially define a processing region within the semiconductor processing chamber. The faceplate may be characterized by a central axis, and the faceplate may define a plurality of apertures through the faceplate. The faceplate may define a central recess about the central axis extending from the second surface of the faceplate to a depth less than a thickness of the faceplate.

Abstract: The disclosure relates to a chemical deposition, treatment and/or infiltration apparatus for providing a chemical reaction on and/or in a surface of a substrate. The apparatus may have a top and a bottom reaction chamber part forming together a closable reaction chamber and an actuator constructed and arranged for moving the top and bottom reaction chamber parts with respect to each other from a closed position to an open position so as to allow access to an interior of the reaction chamber. A top substrate holder is connected to the top reaction chamber part to hold a substrate at least when the reaction chamber is in the open position and a bottom substrate holder is connected to the bottom reaction chamber part to hold the substrate when the reaction chamber is in the closed position.

Abstract: A seal plate disposable between a pair of preforms for chemical vapor infiltration is disclosed. The seal plate may include a plurality of first channels that extend completely through the seal plate and that are located between an inner annulus and outer annulus of the seal plate. The seal plate may further include a plurality of second channels that also extend completely through the seal plate and that are located also between an inner annulus and outer annulus. The first channels may differ from the second channels in at least one respect (e.g., the first channels may be of a different width than the second channels). The first channels may provide an inlet for the chemical vapor infiltration of the preform, while the second channels may provide an outlet for the chemical vapor infiltration of the preform.

Abstract: A wafer placement apparatus includes a ceramic plate having a top surface including a wafer placement surface, the ceramic plate allowing at least one of an electrostatic electrode and a heater electrode to be embedded therein; and a cooling plate disposed on an undersurface of the ceramic plate opposite to the wafer placement surface to cool the ceramic plate, wherein the cooling plate includes a coolant channel, and the coolant channel has a multi-layer structure at least partially including two or more layers stacked vertically, the two or more layers being spaced different distances apart from the wafer placement surface.