Abstract: Holding devices for receiving a plurality of substrates in a substrate treatment system are disclosed. Holding devices comprise a flange, at least one segment that is releasably disposed on the flange, and at least one carrier for receiving one or a plurality of substrates. The flange has connection faces for disposing the at least one segment on the flange. The at least one segment has a segment support structure. The at least one carrier is assembled on the segment support structure.

Abstract: A vertical heat treatment apparatus includes: a substrate holder including a column, substrate holding parts configured to hold the substrates, and gas flow guide parts installed in the column in a corresponding relationship with the substrates; an elevator stand configured to support the substrate holder and to load the substrate holder into the reaction vessel from below the reaction vessel; a rotating mechanism installed in the elevator stand and configured to rotate the substrate holder about a vertical axis; a process gas supply port and an exhaust port respectively formed at a rear side and a front side of a substrate holding region; and a plurality of baffle parts installed independently of the substrate holder so that the baffle parts protrude from the outside toward spaces between the gas flow guide parts adjoining each other and run into the spaces.

Abstract: The invention relates to a method and a system for the plasma treatment of successive substrates comprising one or more steel products in which the substrates are transported, one after another, through at least one plasma treatment zone, characterized in that the electric power for generating the plasma in the treatment zone is varied according to the area of the substrate is present in this treatment zone when the substrate is running through this zone.

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.

Abstract: A mask includes a shielding portion and a plurality of hollow regions. The shielding portion includes: a plurality of shielding strips, a plurality of raised portions and a plurality of grooves. Side surfaces of some of the plurality of shielding strips are sequentially connected to form one of the plurality of hollow regions. Each raised portion is disposed on a side surface of a corresponding one of the plurality of shielding strips close to a corresponding hollow region, and each raised portion is connected with the side surface of the shielding strip. Each groove is at least partially formed in a first surface of a corresponding one of the plurality of raised portions, and the first surface is parallel to a plate surface of the mask.

Abstract: A thin film deposition system includes a web guide system having a plurality of web guides defining a web transport path for the web of substrate. The web guide system includes a moveable portion including first and second moveable-position web guides. A web transport control system advances the web of substrate along the web transport path at a web advance velocity. A deposition head is located along the web transport path between the first and second moveable-position web guides. A motion actuator system synchronously moves a position of the first and second moveable-position web guides such that they move forward and backward according to a defined oscillating motion pattern while maintaining a constant distance between the first and second moveable-position web guides, thereby causing a portion of the web of media adjacent to the deposition head to move forward and backward in an in-track direction.

Abstract: A deposition mask includes a first surface facing to the deposition target substrate, and a second surface opposite to the first surface. The deposition mask includes: an effective area in which a plurality of through holes are formed and a longitudinal direction in which one or more of the effective areas are arranged along the longitudinal direction. At least in a central area of the longitudinal direction, the deposition mask is warped to be convex on the first surface in a cross section orthogonal to the longitudinal direction.

Abstract: An apparatus for feeding liquid metal to an evaporator device in a vacuum chamber, wherein the apparatus includes a container adapted to contain a liquid metal, a feed tube from the closed container to the evaporator device and an electromagnetic pump provided in the feed tube, and wherein the electromagnetic pump is placed in a vacuum enclosure.

Abstract: Provided is a substrate processing apparatus in which parts are selectively lifted according to the purpose or subject of maintenance/repair during a maintenance/repair operation. The substrate processing apparatus includes: a chamber; a first cover and a second cover on the chamber; a lifting device connected to the first cover and configured to raise and lower the first cover; and a connection region. When the lifting device and the second cover are connected to each other via the connection region or the first and second covers are connected to each other via the connection region, the first and second covers are raised and lowered by the lifting device.

Abstract: A source material container includes a housing, a tray assembly and a plurality of cylindrical members. The housing provides a carrier gas introduction port and an opening through which a gas containing source material vapor is outputted. The tray assembly trays stacked in the housing. The cylindrical members are arranged in a radial direction between the tray assembly and the housing. The outermost cylindrical member provides a slit and each of the other cylindrical members than the outermost cylindrical member provides a plurality of slits. From the introduction port to the gap between the tray assembly and the innermost cylindrical member, the flow path of the carrier gas is branched in a stepwise manner in the height direction.

Abstract: A substrate processing device includes a substrate holding table, an ultraviolet irradiator, a tubular member, a first gas supplying unit, and a second gas supplying unit. The ultraviolet irradiator is disposed facing to the substrate through an active space and configured to irradiate the substrate with ultraviolet light. The tubular member includes an inner surface surrounding a side surface of the substrate holding table, and at least one opening at a position facing to the side surface on the inner surface. The first gas supplying unit supplies gas to a space between the side surface of the substrate holding table and the inner surface of the tubular member through the at least one opening. The second gas supplying unit supplies gas to an active space between the substrate and the ultraviolet irradiator.

Abstract: A film forming apparatus includes: first and second processing gas supply parts configured to supply first and second processing gases, respectively; a plasma-generating gas supply part configured to supply a plasma-generating gas; a plasma forming part configured to convert the plasma-generating gas into plasma; a receiving vessel inserted into an opening formed in a ceiling portion of a vacuum vessel, the receiving vessel having a bottom surface portion facing a rotary table and being engaged with the plasma forming part on an upper surface of the bottom surface portion; a dielectric shield member arranged between the receiving vessel and an inner peripheral surface of the opening; a height adjustment part configured to adjust an arrangement height position of the bottom surface portion; and one or more sealing parts configured to hermetically close a space between the vacuum vessel and the receiving vessel.

Abstract: The present disclosure provides a mask plate frame. The mask plate frame includes two opposite rims, and a plurality of connectors detachably mounted to a first surface of each rim along a length direction of each rim. Each connector is used to mount a mask strip.

Abstract: Systems and arrangements of OVJP deposition devices are provided, in which one or more organic material crucibles are directly attached to an injection block and a print head without the need for external delivery components such as feedtubes. Each crucible may be hermetically sealed until it is attached to the injection block, allowing for a single device to provide for storage, transport, and deposition of the organic material.

Abstract: The present disclosure relates to an apparatus for processing a substrate, and more particularly, to an apparatus for processing a substrate, which is capable of allowing a substrate processing gas to smoothly flow on the substrate. The apparatus for processing the substrate in accordance an exemplary embodiment may form a laminar flow through a gas supply unit disposed on one side of an inner reaction tube and an exhaust duct disposed on the other side of the inner reaction tube, which faces the gas supply unit, to extend up to the outside of an accommodation region of a pedestal in an accommodation space of the inner reaction tube and control a flow of a substrate processing gas supplied onto the substrate.

Abstract: Apparatus, system, and method of depositing thin and ultra-thin parylene are described. In an example, a core deposition chamber is used. The core deposition chamber includes a base and a rigid, removable cover configured to mate and seal with the base to create the core deposition chamber and to define an inside and an outside of the core deposition chamber. The core deposition chamber also includes a conduit through a top of the cover. The conduit has a lumen connecting the inside to the outside of the core deposition chamber. The lumen has a length and a cross-section. The cross-section has a width between 50 ?m and 6000 ?m. The length is less than 140 times the cross-section width. The core deposition chamber can be placed in an outer deposition chamber and can achieve parylene deposition less than 1 ?m thick inside the core deposition chamber.

Abstract: Aspects of the present disclosure generally relate to apparatuses and methods for edge ring replacement in processing chambers. In one aspect, a carrier for supporting an edge ring is disclosed. In other aspects, robot blades for supporting a carrier are disclosed. In another aspect, a support structure for supporting a carrier in a degassing chamber is disclosed. In another aspect, a method of transferring an edge ring on a carrier is disclosed.

Abstract: A vapor deposition apparatus disclosed by an embodiment comprises: a vacuum chamber (8); a mask holder (15) for holding a deposition mask 1; a substrate holder (29) for holding a substrate for vapor deposition (2); an electromagnet (3) disposed above a surface; a vapor deposition source 5 for vaporizing or sublimating a vapor deposition material; and a heat pipe (7) including at least a heat absorption part (71) and a heat dissipation part (72), the heat absorption part being in contact with the electromagnet (3), and the heat dissipation part being derived to an outside of the vacuum chamber (8). The heat pipe (7) and the electromagnet (3) are in intimate contact with each other at an area of a contact part between the heat pipe (7) and the electromagnet (3), the area being equal to or more than a cross-sectional area within an inner perimeter of a coil (32).

Abstract: The present disclosure generally relate to a semiconductor processing apparatus. In one embodiment, a processing chamber is disclosed herein. The processing chamber includes a chamber body and lid defining an interior volume, the lid configured to support a housing having a cap, a substrate support disposed in the interior volume, a vaporizer coupled to the cap and having an outlet open to the interior volume of the processing chamber, wherein the vaporizer is configured to deliver a precursor gas to a processing region defined between the vaporizer and the substrate support, and a heater disposed adjacent to the vaporizer, wherein the heater is configured to heat the vaporizer.

Abstract: A linear evaporation source and a deposition apparatus having the same are disclosed. In one aspect, the linear evaporation source includes i) a crucible being open on one side thereof and configured to store a deposition material and ii) a plurality of partitions dividing an internal space of the crucible, wherein each of the partitions has at least one opening in a lower portion thereof. The source further includes i) a nozzle section located on the open side of the crucible and comprising a plurality of nozzles, ii) a heater configured to heat the crucible and iii) a housing configured to accommodate the crucible, the nozzle section, and the heater.