Abstract: A plasma CVD apparatus efficiently coats the surfaces of fine particles with a thin film or super-fine particles by concentrating a plasma near the fine particles. The plasma CVD apparatus includes a chamber, a container disposed in the chamber for housing the fine particles, the container having a polygonal inner shape in a cross section substantially perpendicular to a longitudinal axis of the container, a ground shielding member for shielding a surface of the container other than a housing face, a rotation mechanism for causing the container to rotate or act as a pendulum on an axis of rotation substantially perpendicular to the cross section, an opposed electrode disposed in the container so as to face the housing face, a plasma power source electrically connected to the container, a gas introducing mechanism for introducing a raw gas into the container, and an evacuation mechanism for evacuating the chamber.

Abstract: Embodiments described herein relate to a base ring assembly for use in a substrate processing chamber. In one embodiment, the base ring assembly comprises a ring body sized to be received within an inner circumference of the substrate processing chamber, the ring body comprising a loading port for passage of the substrate, a gas inlet, and a gas outlet, wherein the gas inlet and the gas outlet are disposed at opposing ends of the ring body, and an upper ring configured to dispose on a top surface of the ring body, and a lower ring configured to dispose on a bottom surface of the ring body, wherein the upper ring, the lower ring, and the ring body, once assembled, are generally concentric or coaxial.

Abstract: An object of the invention is to provide a coating apparatus for a resin container capable of improving mass-production efficiency of coating-treated resin containers. A plurality of container holding members, which are installed on a rotating table and can hold a resin container, are sequentially moved to a container supply position in which the resin container is supplied, a coating treatment position in which coating treatment of forming a thin film on an inner surface of the resin container is performed in a state of being combined with a chamber lid part, and a container detachment position in which the resin container to which the thin film is formed by the coating treatment can be detached according to the rotation of the rotating table, so that the treatments in the respective positions are performed in parallel.

Abstract: A resonance frequency can be adjusted by shifting the resonance frequency without reducing an impedance function or a withstanding voltage characteristic against a high frequency noise, when blocking, by using a multiple parallel resonance characteristic of a distributed constant line, the high frequency noise introduced into a power feed line from an electrical member other than a high frequency electrode within a processing vessel. Comb teeth M of a comb-teeth member 114 are inserted into winding gaps of air core coils 104(1) and 104(2). For example, first comb teeth M? having a thickness m? smaller than a standard thickness ts are mainly inserted in an effective zone A in a central portion of the air core coils. Further, in non-effective zones B at both sides or both end portions thereof, second comb teeth M+ having a thickness m+ equal to or larger than the standard thickness ts are arranged.

Abstract: Embodiments described herein provide for electrically reconfigurable deposition masks. One embodiment is a deposition mask that includes a plurality of electrical elements. Each of the electrical elements has an opening between a top surface and a bottom surface that constricts based on an electrical signal. A plurality of top surfaces of the electrical elements defines a top surface of the mask, and a plurality of bottom surface of the electrical elements defines a bottom surface of the mask.

Abstract: Embodiments of the present invention provide an apparatus for transferring substrates and confining a processing environment in a chamber. One embodiment of the present invention provides a hoop assembly for using a processing chamber. The hoop assembly includes a confinement ring defining a confinement region therein, and three or more lifting fingers attached to the hoop. The three or more lifting fingers are configured to support a substrate outside the inner volume of the confinement ring.

Abstract: A substrate processing system includes a processing chamber and an upper electrode arranged in the processing chamber. A pedestal is configured to support a substrate during processing and includes a lower electrode. An RF generating system is configured to generate RF plasma between the upper electrode and the lower electrode by supplying an RF voltage. A bias generating circuit is configured to selectively supply a DC bias voltage to one of the upper electrode and the lower electrode. A start of the DC bias voltage is initiated one of a first predetermined period before the RF plasma is extinguished and a second predetermined period after the RF plasma is extinguished. A substrate movement system is configured to move the substrate relative to the pedestal while the DC bias voltage is generated.

Abstract: An apparatus for treating the interior of containers includes a chamber for holding a container and provides precursor materials via an annulus formed by coaxially arranged electrodes at which plasma is created upon application of voltage and the container is treated.

Abstract: A deposition apparatus configured to perform a deposition process on a substrate, the deposition apparatus including a chamber having an exhaust opening in a surface, a deposition source in the chamber configured to eject one or more deposition materials toward the substrate, a cooling plate corresponding to an inner surface of the chamber, at which the exhaust opening is formed, a refrigerator contacting the cooling plate, and a pump coupled to the exhaust opening.

Abstract: The present disclosure relates to the field of display technology, particularly to a vacuum deposition apparatus and a vapor deposition method. The vacuum deposition apparatus includes a vacuum chamber and a rotary base, an evaporation source, and a plurality of vapor deposition zones arranged in series from bottom to top in the vacuum chamber, wherein the shape of the rotary base is a Reuleaux triangle, and the trajectories of movement of its vertices in the horizontal plane is a rounded square, the vapor deposition zones are arranged at intervals along the trajectories of movement of the vertices of the rotary base, the evaporation source is driven by the rotary base to pass below the vapor deposition zones sequentially, so that the evaporation source can be used to perform the vapor deposition operation in multiple directions simultaneously, thus improving the uniformity of film formation and utilization of the evaporation material.

Abstract: An evaporation apparatus for depositing material on a substrate by a drum is described. The evaporation apparatus includes a first set of evaporation crucibles aligned in a first line a first direction for depositing evaporated material on the substrate; a first gas supply pipe extending in the first direction being arranged between at least one of the evaporation crucibles of the first set of evaporation crucibles and the drum; and a second gas supply pipe extending in the first direction for providing a gas between the first set of evaporation crucibles and the drum with openings shaped and positioned to improve the uniformity of the deposition of the material.

Abstract: A linear evaporation source and a deposition apparatus having the same are disclosed. In one embodiment, the linear evaporation source includes i) a crucible being open on one side thereof and configured to store a deposition material and ii) a plurality of partitions dividing an internal space of the crucible, wherein each of the partitions has at least one opening in a lower portion thereof. The source further includes i) a nozzle section located on the open side of the crucible and comprising a plurality of nozzles, ii) a heater configured to heat the crucible and iii) a housing configured to accommodate the crucible, the nozzle section, and the heater.

Abstract: A thin-film depositing apparatus including a mask, and a chucking unit for adhering the mask to a surface of a substrate, wherein the chucking unit includes a plurality of magnet units that contact another surface of the substrate by independently rising or falling by using their weight and thus are magnetically combined with the mask.

Abstract: Provided is a plasma processing apparatus in which an external circuit is electrically connected, via a line, to a predetermined electric member within a processing container thereof, and noises of first and second high frequency waves are attenuated or blocked by a filter provided on the line when the noises enter the line from the electric member toward the external circuit. The filter includes: an air core coil provided at a first stage when viewed from the electric member side; a toroidal coil connected in series with the air core coil; an electroconductive casing configured to accommodate or enclose the air core coil and the toroidal coil; a first condenser electrically connected between a connection point between the air core coil and the toroidal coil and the casing; and a second condenser connected between a terminal of the toroidal coil at the external circuit side and the casing.

Abstract: In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.

Abstract: A substrate processing system comprises an upper electrode and a lower electrode arranged in a processing chamber. A gas delivery system selectively delivers at least one of precursor, one or more deposition carrier gases and a post deposition purge gas. An RF generating system deposits film on the substrate by generating RF plasma in the processing chamber between the upper electrode and the lower electrode by supplying an RF voltage to one of the upper electrode and the lower electrode while the precursor and the one or more deposition carrier gases are delivered by the gas delivery system. A bias generating circuit selectively supplies a DC bias voltage to one of the upper electrode and the lower electrode while the post deposition purge gas is delivered by the gas delivery system. The post deposition purge gas that is delivered by the gas delivery system includes a molecular reactant gas.

Abstract: A crucible device comprises a crucible body configured to store evaporation material, with an opening disposed therein; a crucible cover which matches the opening of the crucible body and which forms a hermetic space in cooperation with the crucible body when being in a closed state and opens the opening of the crucible body when being in an open state; a driving mechanism comprising a housing with a cavity therein and a piston disposed within the cavity, the cavity being divided by the piston into a closed chamber and an open chamber by the piston, the open chamber being in communication with outside of the cavity through a cavity opening of the cavity, the closed chamber storing gas therein, the piston being connected with the crucible cover by a transmission mechanism, the piston being moved within the cavity in accordance with change of pressure in the open chamber, thereby driving the crucible cover to switch between the open state and the closed state.

Abstract: A vacuum powered deposition apparatus including a driving unit, a linear motion unit coupled to the driving unit and configured to move linearly according to operation of the driving unit, and an angle restriction unit coupled to the linear motion unit and configured to move in a direction perpendicular to that of the linear motion unit according to movement of the linear motion unit.

Abstract: A deposition apparatus includes deposition sources, a deposition chamber, a mask assembly, and a transfer unit. The mask assembly includes a support member, a shutter member, and a drive member. The support member has a first opening configured to allow the deposition materials to pass through while supporting the base substrate on which the passed-through deposition materials are deposited. The shutter member is accommodated in the support member and has a second opening smaller than the first opening. The drive member is configured to change a position of the second opening with respect to the base substrate in accordance with the movement of the mask assembly.

Abstract: A vapor deposition device (1) performs a vapor deposition treatment to form a luminescent layer (47) having a predetermined pattern on a film formation substrate (40). The vapor deposition device includes: a nozzle (13) having a plurality of injection holes (16) from which vapor deposition particles (17), which constitute the luminescent layer, are injected toward the film formation substrate when the vapor deposition treatment is carried out; and a plurality of control plates (20) provided between the nozzle and the film formation substrate and restricting an incident angle, with respect to the film formation substrate, of the vapor deposition particles injected from the plurality of injection holes. The nozzle includes: a nozzle main body (14b) in a container shape having an opening (14c) on a surface thereof on a film formation substrate side and (ii) a plurality of blocks (15) covering the opening and separated from each other, each of the plurality of blocks having the plurality of injection holes.